TWI564891B - 促進動態記憶體元件精細更新控制之機制 - Google Patents
促進動態記憶體元件精細更新控制之機制 Download PDFInfo
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- TWI564891B TWI564891B TW101123340A TW101123340A TWI564891B TW I564891 B TWI564891 B TW I564891B TW 101123340 A TW101123340 A TW 101123340A TW 101123340 A TW101123340 A TW 101123340A TW I564891 B TWI564891 B TW I564891B
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40618—Refresh operations over multiple banks or interleaving
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C2211/406—Refreshing of dynamic cells
- G11C2211/4061—Calibration or ate or cycle tuning
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/173,302 US9159396B2 (en) | 2011-06-30 | 2011-06-30 | Mechanism for facilitating fine-grained self-refresh control for dynamic memory devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201301279A TW201301279A (zh) | 2013-01-01 |
| TWI564891B true TWI564891B (zh) | 2017-01-01 |
Family
ID=47391851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101123340A TWI564891B (zh) | 2011-06-30 | 2012-06-28 | 促進動態記憶體元件精細更新控制之機制 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9159396B2 (https=) |
| EP (1) | EP2727113A4 (https=) |
| JP (1) | JP2014524098A (https=) |
| KR (1) | KR20140047094A (https=) |
| CN (1) | CN103688311B (https=) |
| TW (1) | TWI564891B (https=) |
| WO (1) | WO2013003223A2 (https=) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015041395A (ja) | 2013-08-20 | 2015-03-02 | キヤノン株式会社 | 情報処理装置及びその制御方法、並びに、そのプログラムと記憶媒体 |
| KR102372888B1 (ko) | 2015-06-15 | 2022-03-10 | 삼성전자주식회사 | 저장 장치의 온도별 데이터 관리 방법 |
| US10783950B2 (en) | 2015-09-02 | 2020-09-22 | Nvidia Corporation | Memory management systems and methods using a management communication bus |
| US10937484B2 (en) * | 2015-12-30 | 2021-03-02 | International Business Machines Corporation | Dynamic bandwidth throttling of DRAM accesses for memory tracing |
| CN105679360A (zh) * | 2016-01-05 | 2016-06-15 | 上海新储集成电路有限公司 | 一种可刷新的非易失性存储器及其刷新方法 |
| CN108369818B (zh) * | 2016-03-09 | 2024-01-30 | 华为技术有限公司 | 一种闪存设备的刷新方法和装置 |
| JP6772797B2 (ja) * | 2016-12-05 | 2020-10-21 | 株式会社デンソー | 制御装置 |
| US10332579B2 (en) * | 2017-11-30 | 2019-06-25 | Nanya Technology Corporation | DRAM and method for operating the same |
| US10236035B1 (en) * | 2017-12-04 | 2019-03-19 | Nanya Technology Corporation | DRAM memory device adjustable refresh rate method to alleviate effects of row hammer events |
| US10446246B2 (en) * | 2018-03-14 | 2019-10-15 | Silicon Storage Technology, Inc. | Method and apparatus for data refresh for analog non-volatile memory in deep learning neural network |
| US10978136B2 (en) * | 2019-07-18 | 2021-04-13 | Apple Inc. | Dynamic refresh rate control |
| KR102816799B1 (ko) * | 2019-10-30 | 2025-06-09 | 삼성전자주식회사 | 동작 온도에 기초하여 동작 주기를 조절하는 메모리 장치 |
| US11195568B1 (en) | 2020-08-12 | 2021-12-07 | Samsung Electronics Co., Ltd. | Methods and systems for controlling refresh operations of a memory device |
| EP4002368A4 (en) | 2020-09-22 | 2022-05-25 | Changxin Memory Technologies, Inc. | MEMORY DATA REFRESHMENT PROCEDURES AND CONTROL THEREOF AND STORAGE |
| US11520661B1 (en) * | 2021-07-12 | 2022-12-06 | Apple Inc. | Scheduling of data refresh in a memory based on decoding latencies |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW331644B (en) * | 1996-07-15 | 1998-05-11 | Motorola Inc | Dynamic memory device. |
| US6269039B1 (en) * | 2000-04-04 | 2001-07-31 | International Business Machines Corp. | System and method for refreshing memory devices |
| TW501012B (en) * | 2001-01-09 | 2002-09-01 | Silicon Integrated Sys Corp | Method and apparatus of event-driven based refresh for high performance memory controller |
| US6778457B1 (en) * | 2003-02-19 | 2004-08-17 | Freescale Semiconductor, Inc. | Variable refresh control for a memory |
| US20060203590A1 (en) * | 2005-03-10 | 2006-09-14 | Yuki Mori | Dynamic random access memories and method for testing performance of the same |
| US7193918B2 (en) * | 2003-01-29 | 2007-03-20 | Stmicroelectronics S.A. | Process for refreshing a dynamic random access memory and corresponding device |
| US20070268767A1 (en) * | 2006-05-22 | 2007-11-22 | Kwi Dong Kim | Circuit and method for controlling self-refresh cycle |
| US20090161459A1 (en) * | 2007-12-20 | 2009-06-25 | Agere Systems Inc. | Dynamic Random Access Memory With Low-Power Refresh |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55125662A (en) * | 1979-03-22 | 1980-09-27 | Fujitsu Ltd | Semiconductor integrated circuit |
| JPS63121197A (ja) * | 1986-11-07 | 1988-05-25 | Fujitsu Ltd | 半導体記憶装置 |
| US5677867A (en) * | 1991-06-12 | 1997-10-14 | Hazani; Emanuel | Memory with isolatable expandable bit lines |
| JP3285611B2 (ja) * | 1992-06-24 | 2002-05-27 | 富士通株式会社 | ダイナミック半導体メモリ装置 |
| JP2002157898A (ja) * | 2000-11-15 | 2002-05-31 | Mitsubishi Electric Corp | 半導体集積回路 |
| US6366516B1 (en) * | 2000-12-29 | 2002-04-02 | Intel Corporation | Memory subsystem employing pool of refresh candidates |
| US6483764B2 (en) | 2001-01-16 | 2002-11-19 | International Business Machines Corporation | Dynamic DRAM refresh rate adjustment based on cell leakage monitoring |
| JP2002373489A (ja) | 2001-06-15 | 2002-12-26 | Mitsubishi Electric Corp | 半導体記憶装置 |
| DE10134090A1 (de) * | 2001-07-13 | 2003-01-30 | Infineon Technologies Ag | Speicher und Verfahren zum Ersetzen von fehlerhaften Speicherzellen in demselben |
| US6781908B1 (en) | 2003-02-19 | 2004-08-24 | Freescale Semiconductor, Inc. | Memory having variable refresh control and method therefor |
| US7353329B2 (en) | 2003-09-29 | 2008-04-01 | Intel Corporation | Memory buffer device integrating refresh logic |
| US7177220B2 (en) * | 2004-05-07 | 2007-02-13 | Taiwan Semiconductor Manufacturing Co., Ltd | Refresh counter with dynamic tracking of process, voltage and temperature variation for semiconductor memory |
| ATE431958T1 (de) * | 2004-10-21 | 2009-06-15 | Nxp Bv | Speicherbaustein und verfahren zur bereitstellung eines auf einer mittleren schwelle basierenden auffrischmechanismus |
| DE102005025168B4 (de) * | 2005-06-01 | 2013-05-29 | Qimonda Ag | Elektronische Speichervorrichtung und Verfahren zum Betreiben einer elektronischen Speichervorrichtung |
| FR2903219A1 (fr) * | 2006-07-03 | 2008-01-04 | St Microelectronics Sa | Procede de rafraichissement d'un memoire vive dynamique et dispositif de memoire vive dynamique correspondant,en particulier incorpore dans un telephone mobile cellulaire |
| US7990795B2 (en) * | 2009-02-19 | 2011-08-02 | Freescale Semiconductor, Inc. | Dynamic random access memory (DRAM) refresh |
| US20120243299A1 (en) * | 2011-03-23 | 2012-09-27 | Jeng-Jye Shau | Power efficient dynamic random access memory devices |
-
2011
- 2011-06-30 US US13/173,302 patent/US9159396B2/en active Active
-
2012
- 2012-06-22 EP EP12804749.5A patent/EP2727113A4/en not_active Ceased
- 2012-06-22 CN CN201280025142.2A patent/CN103688311B/zh active Active
- 2012-06-22 JP JP2014518868A patent/JP2014524098A/ja active Pending
- 2012-06-22 KR KR20147002152A patent/KR20140047094A/ko not_active Ceased
- 2012-06-22 WO PCT/US2012/043727 patent/WO2013003223A2/en not_active Ceased
- 2012-06-28 TW TW101123340A patent/TWI564891B/zh active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW331644B (en) * | 1996-07-15 | 1998-05-11 | Motorola Inc | Dynamic memory device. |
| US6269039B1 (en) * | 2000-04-04 | 2001-07-31 | International Business Machines Corp. | System and method for refreshing memory devices |
| TW501012B (en) * | 2001-01-09 | 2002-09-01 | Silicon Integrated Sys Corp | Method and apparatus of event-driven based refresh for high performance memory controller |
| US7193918B2 (en) * | 2003-01-29 | 2007-03-20 | Stmicroelectronics S.A. | Process for refreshing a dynamic random access memory and corresponding device |
| US6778457B1 (en) * | 2003-02-19 | 2004-08-17 | Freescale Semiconductor, Inc. | Variable refresh control for a memory |
| US20060203590A1 (en) * | 2005-03-10 | 2006-09-14 | Yuki Mori | Dynamic random access memories and method for testing performance of the same |
| US20070268767A1 (en) * | 2006-05-22 | 2007-11-22 | Kwi Dong Kim | Circuit and method for controlling self-refresh cycle |
| US20090161459A1 (en) * | 2007-12-20 | 2009-06-25 | Agere Systems Inc. | Dynamic Random Access Memory With Low-Power Refresh |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2727113A4 (en) | 2015-03-18 |
| WO2013003223A2 (en) | 2013-01-03 |
| KR20140047094A (ko) | 2014-04-21 |
| TW201301279A (zh) | 2013-01-01 |
| CN103688311A (zh) | 2014-03-26 |
| EP2727113A2 (en) | 2014-05-07 |
| JP2014524098A (ja) | 2014-09-18 |
| US20130007357A1 (en) | 2013-01-03 |
| CN103688311B (zh) | 2017-10-13 |
| WO2013003223A3 (en) | 2013-03-21 |
| US9159396B2 (en) | 2015-10-13 |
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