JP2014519192A5 - - Google Patents
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- Publication number
- JP2014519192A5 JP2014519192A5 JP2014509858A JP2014509858A JP2014519192A5 JP 2014519192 A5 JP2014519192 A5 JP 2014519192A5 JP 2014509858 A JP2014509858 A JP 2014509858A JP 2014509858 A JP2014509858 A JP 2014509858A JP 2014519192 A5 JP2014519192 A5 JP 2014519192A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride layer
- layer
- tensile
- gate structure
- trench
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 24
- 150000004767 nitrides Chemical class 0.000 claims 23
- 229910052751 metal Inorganic materials 0.000 claims 16
- 239000002184 metal Substances 0.000 claims 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 11
- 229920005591 polysilicon Polymers 0.000 claims 11
- 230000001939 inductive effect Effects 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 6
- 238000003848 UV Light-Curing Methods 0.000 claims 5
- 230000005669 field effect Effects 0.000 claims 5
- 239000004065 semiconductor Substances 0.000 claims 5
- RVSGESPTHDDNTH-UHFFFAOYSA-N alumane;tantalum Chemical compound [AlH3].[Ta] RVSGESPTHDDNTH-UHFFFAOYSA-N 0.000 claims 4
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 claims 4
- 238000001723 curing Methods 0.000 claims 4
- 229910000676 Si alloy Inorganic materials 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 2
- CEPICIBPGDWCRU-UHFFFAOYSA-N [Si].[Hf] Chemical compound [Si].[Hf] CEPICIBPGDWCRU-UHFFFAOYSA-N 0.000 claims 2
- 229910052735 hafnium Inorganic materials 0.000 claims 2
- -1 hafnium nitride Chemical class 0.000 claims 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 229910003468 tantalcarbide Inorganic materials 0.000 claims 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 238000000137 annealing Methods 0.000 claims 1
- 238000000280 densification Methods 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/103,149 US8421132B2 (en) | 2011-05-09 | 2011-05-09 | Post-planarization UV curing of stress inducing layers in replacement gate transistor fabrication |
| US13/103,149 | 2011-05-09 | ||
| PCT/IB2012/050847 WO2012153201A1 (en) | 2011-05-09 | 2012-02-24 | Preserving stress benefits of uv curing in replacement gate transistor fabrication |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014519192A JP2014519192A (ja) | 2014-08-07 |
| JP2014519192A5 true JP2014519192A5 (https=) | 2014-09-18 |
| JP5657176B2 JP5657176B2 (ja) | 2015-01-21 |
Family
ID=47138851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014509858A Expired - Fee Related JP5657176B2 (ja) | 2011-05-09 | 2012-02-24 | 置換ゲート・トランジスタの作製におけるｕｖ硬化の応力利得の保持 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8421132B2 (https=) |
| JP (1) | JP5657176B2 (https=) |
| CN (1) | CN103620748B (https=) |
| DE (1) | DE112012001089B4 (https=) |
| GB (1) | GB2503848B (https=) |
| WO (1) | WO2012153201A1 (https=) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8765561B2 (en) * | 2011-06-06 | 2014-07-01 | United Microelectronics Corp. | Method for fabricating semiconductor device |
| US8658487B2 (en) * | 2011-11-17 | 2014-02-25 | United Microelectronics Corp. | Semiconductor device and fabrication method thereof |
| US8803249B2 (en) * | 2012-08-09 | 2014-08-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Profile pre-shaping for replacement poly gate interlayer dielectric |
| US9293466B2 (en) | 2013-06-19 | 2016-03-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Embedded SRAM and methods of forming the same |
| US9520474B2 (en) * | 2013-09-12 | 2016-12-13 | Taiwan Semiconductor Manufacturing Company Limited | Methods of forming a semiconductor device with a gate stack having tapered sidewalls |
| CN104637797A (zh) * | 2013-11-12 | 2015-05-20 | 中国科学院微电子研究所 | 一种后栅工艺中ild层的处理方法 |
| CN104681597A (zh) * | 2013-11-28 | 2015-06-03 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
| US9312174B2 (en) * | 2013-12-17 | 2016-04-12 | United Microelectronics Corp. | Method for manufacturing contact plugs for semiconductor devices |
| CN105225949B (zh) * | 2014-05-26 | 2018-08-21 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法和电子装置 |
| US10068982B2 (en) * | 2014-05-29 | 2018-09-04 | Taiwan Semiconductor Manufacturing Co., Ltd | Structure and formation method of semiconductor device structure with metal gate |
| CN105336588B (zh) * | 2014-05-29 | 2019-01-22 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的形成方法 |
| US10164049B2 (en) | 2014-10-06 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and formation method of semiconductor device with gate stack |
| KR102224386B1 (ko) * | 2014-12-18 | 2021-03-08 | 삼성전자주식회사 | 집적 회로 장치의 제조 방법 |
| KR101785803B1 (ko) | 2015-05-29 | 2017-10-16 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 반도체 디바이스 구조체의 형성 방법 |
| US9553090B2 (en) | 2015-05-29 | 2017-01-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and formation method of semiconductor device structure |
| CN107170684B (zh) * | 2016-03-08 | 2020-05-08 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应晶体管的形成方法 |
| US10147649B2 (en) | 2016-05-27 | 2018-12-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device structure with gate stack and method for forming the same |
| US10020401B2 (en) | 2016-11-29 | 2018-07-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for straining a transistor gate through interlayer dielectric (ILD) doping schemes |
| US9786754B1 (en) * | 2017-02-06 | 2017-10-10 | Vanguard International Semiconductor Corporation | Method for forming semiconductor device structure |
| CN109585293B (zh) * | 2017-09-29 | 2021-12-24 | 台湾积体电路制造股份有限公司 | 切割金属工艺中的基脚去除 |
| JP7837860B2 (ja) * | 2019-08-09 | 2026-03-31 | ヒタチ・エナジー・リミテッド | 歪み強化型ＳｉＣパワー半導体デバイスおよび製造方法 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6033963A (en) | 1999-08-30 | 2000-03-07 | Taiwan Semiconductor Manufacturing Company | Method of forming a metal gate for CMOS devices using a replacement gate process |
| US6465309B1 (en) | 2000-12-12 | 2002-10-15 | Advanced Micro Devices, Inc. | Silicide gate transistors |
| KR20030075745A (ko) | 2002-03-20 | 2003-09-26 | 삼성전자주식회사 | 반도체 소자의 금속게이트 형성방법 |
| JP2008518476A (ja) * | 2004-10-29 | 2008-05-29 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | 異なるように歪ませた歪みチャネル領域を有する半導体領域を含む、半導体デバイスおよびその製造方法 |
| JP5091397B2 (ja) | 2005-10-27 | 2012-12-05 | パナソニック株式会社 | 半導体装置 |
| US7510943B2 (en) * | 2005-12-16 | 2009-03-31 | Infineon Technologies Ag | Semiconductor devices and methods of manufacture thereof |
| US7678630B2 (en) * | 2006-02-15 | 2010-03-16 | Infineon Technologies Ag | Strained semiconductor device and method of making same |
| JP2007324391A (ja) * | 2006-06-01 | 2007-12-13 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| US20070281405A1 (en) | 2006-06-02 | 2007-12-06 | International Business Machines Corporation | Methods of stressing transistor channel with replaced gate and related structures |
| US7601574B2 (en) | 2006-10-25 | 2009-10-13 | Globalfoundries Inc. | Methods for fabricating a stress enhanced MOS transistor |
| WO2008096587A1 (ja) | 2007-02-07 | 2008-08-14 | Nec Corporation | 半導体装置 |
| JP5003515B2 (ja) | 2007-03-20 | 2012-08-15 | ソニー株式会社 | 半導体装置 |
| US7846804B2 (en) * | 2007-06-05 | 2010-12-07 | United Microelectronics Corp. | Method for fabricating high tensile stress film |
| US7842592B2 (en) | 2007-06-08 | 2010-11-30 | International Business Machines Corporation | Channel strain engineering in field-effect-transistor |
| JP2008306132A (ja) * | 2007-06-11 | 2008-12-18 | Renesas Technology Corp | 半導体装置の製造方法 |
| US7911001B2 (en) * | 2007-07-15 | 2011-03-22 | Samsung Electronics Co., Ltd. | Methods for forming self-aligned dual stress liners for CMOS semiconductor devices |
| US20090035928A1 (en) * | 2007-07-30 | 2009-02-05 | Hegde Rama I | Method of processing a high-k dielectric for cet scaling |
| DE102007046849B4 (de) | 2007-09-29 | 2014-11-06 | Advanced Micro Devices, Inc. | Verfahren zur Herstellung von Gateelektrodenstrukturen mit großem ε nach der Transistorherstellung |
| US20090179308A1 (en) | 2008-01-14 | 2009-07-16 | Chris Stapelmann | Method of Manufacturing a Semiconductor Device |
| JP5309619B2 (ja) * | 2008-03-07 | 2013-10-09 | ソニー株式会社 | 半導体装置およびその製造方法 |
| JP5147471B2 (ja) * | 2008-03-13 | 2013-02-20 | パナソニック株式会社 | 半導体装置 |
| JP2009277908A (ja) | 2008-05-15 | 2009-11-26 | Toshiba Corp | 半導体装置の製造方法及び半導体装置 |
| DE102009039521B4 (de) | 2009-08-31 | 2018-02-15 | Globalfoundries Dresden Module One Llc & Co. Kg | Verbesserte Füllbedingungen in einem Austauschgateverfahren unter Anwendung einer zugverspannten Deckschicht |
| CN101866859B (zh) | 2010-07-07 | 2012-07-04 | 北京大学 | 一种沟道应力引入方法及采用该方法制备的场效应晶体管 |
| US8293605B2 (en) * | 2011-02-25 | 2012-10-23 | GlobalFoundries, Inc. | Methods for fabricating a CMOS integrated circuit having a dual stress layer (DSL) |
-
2011
- 2011-05-09 US US13/103,149 patent/US8421132B2/en not_active Expired - Fee Related
-
2012
- 2012-02-24 CN CN201280022389.9A patent/CN103620748B/zh not_active Expired - Fee Related
- 2012-02-24 DE DE112012001089.2T patent/DE112012001089B4/de not_active Expired - Fee Related
- 2012-02-24 JP JP2014509858A patent/JP5657176B2/ja not_active Expired - Fee Related
- 2012-02-24 GB GB1318709.1A patent/GB2503848B/en active Active
- 2012-02-24 WO PCT/IB2012/050847 patent/WO2012153201A1/en not_active Ceased
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