JP2014220496A5 - - Google Patents
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- Publication number
- JP2014220496A5 JP2014220496A5 JP2014086568A JP2014086568A JP2014220496A5 JP 2014220496 A5 JP2014220496 A5 JP 2014220496A5 JP 2014086568 A JP2014086568 A JP 2014086568A JP 2014086568 A JP2014086568 A JP 2014086568A JP 2014220496 A5 JP2014220496 A5 JP 2014220496A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- metal
- diffusion layer
- spacers
- dummy gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009792 diffusion process Methods 0.000 claims 12
- 238000000034 method Methods 0.000 claims 12
- 229910052751 metal Inorganic materials 0.000 claims 11
- 239000002184 metal Substances 0.000 claims 11
- 125000006850 spacer group Chemical group 0.000 claims 7
- 238000000137 annealing Methods 0.000 claims 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- 230000005669 field effect Effects 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 239000002131 composite material Substances 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 238000005498 polishing Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP13166902.0A EP2802003B1 (en) | 2013-05-07 | 2013-05-07 | Method for providing a gate metal layer of a transistor device |
| EP13166902.0 | 2013-05-07 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014220496A JP2014220496A (ja) | 2014-11-20 |
| JP2014220496A5 true JP2014220496A5 (https=) | 2017-06-01 |
| JP6158132B2 JP6158132B2 (ja) | 2017-07-05 |
Family
ID=48227076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014086568A Active JP6158132B2 (ja) | 2013-05-07 | 2014-04-18 | トランジスタデバイスのゲート金属層を設ける方法および関連するトランジスタ |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9202695B2 (https=) |
| EP (1) | EP2802003B1 (https=) |
| JP (1) | JP6158132B2 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016063743A1 (ja) | 2014-10-23 | 2016-04-28 | 株式会社Ｓｃｒｅｅｎホールディングス | 熱処理方法および熱処理装置 |
| CN108962892B (zh) * | 2017-05-26 | 2021-02-26 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
| US10204828B1 (en) | 2018-02-09 | 2019-02-12 | International Business Machines Corporation | Enabling low resistance gates and contacts integrated with bilayer dielectrics |
| US10529823B2 (en) | 2018-05-29 | 2020-01-07 | International Business Machines Corporation | Method of manufacturing a semiconductor device having a metal gate with different lateral widths between spacers |
| US11978774B2 (en) * | 2020-10-05 | 2024-05-07 | Sandisk Technologies Llc | High voltage field effect transistor with vertical current paths and method of making the same |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08255766A (ja) * | 1995-03-17 | 1996-10-01 | Sony Corp | 半導体装置の製造方法 |
| JP2002299610A (ja) * | 2001-03-30 | 2002-10-11 | Toshiba Corp | 半導体装置およびその製造方法 |
| FR2844396B1 (fr) * | 2002-09-06 | 2006-02-03 | St Microelectronics Sa | Procede de realisation d'un composant electronique integre et dispositif electrique incorporant un composant integre ainsi obtenu |
| US7071086B2 (en) * | 2003-04-23 | 2006-07-04 | Advanced Micro Devices, Inc. | Method of forming a metal gate structure with tuning of work function by silicon incorporation |
| US7268065B2 (en) * | 2004-06-18 | 2007-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of manufacturing metal-silicide features |
| US7091118B1 (en) | 2004-11-16 | 2006-08-15 | Advanced Micro Devices, Inc. | Replacement metal gate transistor with metal-rich silicon layer and method for making the same |
| US8294202B2 (en) * | 2009-07-08 | 2012-10-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal gate structure of a semiconductor device |
| US8304841B2 (en) * | 2009-09-14 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal gate transistor, integrated circuits, systems, and fabrication methods thereof |
| JP5598145B2 (ja) * | 2010-08-04 | 2014-10-01 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法及び半導体装置 |
| US8492286B2 (en) | 2010-11-22 | 2013-07-23 | International Business Machines Corporation | Method of forming E-fuse in replacement metal gate manufacturing process |
| US8450169B2 (en) | 2010-11-29 | 2013-05-28 | International Business Machines Corporation | Replacement metal gate structures providing independent control on work function and gate leakage current |
| US20120135590A1 (en) | 2010-11-30 | 2012-05-31 | Advanced Technology Materials, Inc. | Silicon removal from surfaces and method of forming high k metal gate structures using same |
-
2013
- 2013-05-07 EP EP13166902.0A patent/EP2802003B1/en active Active
-
2014
- 2014-04-18 JP JP2014086568A patent/JP6158132B2/ja active Active
- 2014-05-07 US US14/271,956 patent/US9202695B2/en active Active
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