JP6158132B2 - トランジスタデバイスのゲート金属層を設ける方法および関連するトランジスタ - Google Patents

トランジスタデバイスのゲート金属層を設ける方法および関連するトランジスタ Download PDF

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Publication number
JP6158132B2
JP6158132B2 JP2014086568A JP2014086568A JP6158132B2 JP 6158132 B2 JP6158132 B2 JP 6158132B2 JP 2014086568 A JP2014086568 A JP 2014086568A JP 2014086568 A JP2014086568 A JP 2014086568A JP 6158132 B2 JP6158132 B2 JP 6158132B2
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layer
metal
diffusion layer
gate
region
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Japanese (ja)
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JP2014220496A5 (https=
JP2014220496A (ja
Inventor
東郷　光洋
光洋 東郷
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Interuniversitair Microelektronica Centrum vzw IMEC
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Interuniversitair Microelektronica Centrum vzw IMEC
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01318—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN
    • H10D64/0132—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN the conductor being a metallic silicide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H10D64/668—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers the layer being a silicide, e.g. TiSi2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2014086568A 2013-05-07 2014-04-18 トランジスタデバイスのゲート金属層を設ける方法および関連するトランジスタ Active JP6158132B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP13166902.0A EP2802003B1 (en) 2013-05-07 2013-05-07 Method for providing a gate metal layer of a transistor device
EP13166902.0 2013-05-07

Publications (3)

Publication Number Publication Date
JP2014220496A JP2014220496A (ja) 2014-11-20
JP2014220496A5 JP2014220496A5 (https=) 2017-06-01
JP6158132B2 true JP6158132B2 (ja) 2017-07-05

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JP2014086568A Active JP6158132B2 (ja) 2013-05-07 2014-04-18 トランジスタデバイスのゲート金属層を設ける方法および関連するトランジスタ

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Country Link
US (1) US9202695B2 (https=)
EP (1) EP2802003B1 (https=)
JP (1) JP6158132B2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016063743A1 (ja) 2014-10-23 2016-04-28 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
CN108962892B (zh) * 2017-05-26 2021-02-26 联华电子股份有限公司 半导体元件及其制作方法
US10204828B1 (en) 2018-02-09 2019-02-12 International Business Machines Corporation Enabling low resistance gates and contacts integrated with bilayer dielectrics
US10529823B2 (en) 2018-05-29 2020-01-07 International Business Machines Corporation Method of manufacturing a semiconductor device having a metal gate with different lateral widths between spacers
US11978774B2 (en) * 2020-10-05 2024-05-07 Sandisk Technologies Llc High voltage field effect transistor with vertical current paths and method of making the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08255766A (ja) * 1995-03-17 1996-10-01 Sony Corp 半導体装置の製造方法
JP2002299610A (ja) * 2001-03-30 2002-10-11 Toshiba Corp 半導体装置およびその製造方法
FR2844396B1 (fr) * 2002-09-06 2006-02-03 St Microelectronics Sa Procede de realisation d'un composant electronique integre et dispositif electrique incorporant un composant integre ainsi obtenu
US7071086B2 (en) * 2003-04-23 2006-07-04 Advanced Micro Devices, Inc. Method of forming a metal gate structure with tuning of work function by silicon incorporation
US7268065B2 (en) * 2004-06-18 2007-09-11 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of manufacturing metal-silicide features
US7091118B1 (en) 2004-11-16 2006-08-15 Advanced Micro Devices, Inc. Replacement metal gate transistor with metal-rich silicon layer and method for making the same
US8294202B2 (en) * 2009-07-08 2012-10-23 Taiwan Semiconductor Manufacturing Company, Ltd. Metal gate structure of a semiconductor device
US8304841B2 (en) * 2009-09-14 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Metal gate transistor, integrated circuits, systems, and fabrication methods thereof
JP5598145B2 (ja) * 2010-08-04 2014-10-01 富士通セミコンダクター株式会社 半導体装置の製造方法及び半導体装置
US8492286B2 (en) 2010-11-22 2013-07-23 International Business Machines Corporation Method of forming E-fuse in replacement metal gate manufacturing process
US8450169B2 (en) 2010-11-29 2013-05-28 International Business Machines Corporation Replacement metal gate structures providing independent control on work function and gate leakage current
US20120135590A1 (en) 2010-11-30 2012-05-31 Advanced Technology Materials, Inc. Silicon removal from surfaces and method of forming high k metal gate structures using same

Also Published As

Publication number Publication date
US9202695B2 (en) 2015-12-01
US20140332864A1 (en) 2014-11-13
EP2802003A1 (en) 2014-11-12
EP2802003B1 (en) 2019-08-28
JP2014220496A (ja) 2014-11-20

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