JP2014516210A5 - - Google Patents

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Publication number
JP2014516210A5
JP2014516210A5 JP2014511955A JP2014511955A JP2014516210A5 JP 2014516210 A5 JP2014516210 A5 JP 2014516210A5 JP 2014511955 A JP2014511955 A JP 2014511955A JP 2014511955 A JP2014511955 A JP 2014511955A JP 2014516210 A5 JP2014516210 A5 JP 2014516210A5
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JP
Japan
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group
semiconductor
independently
semiconductor composition
cyan
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JP2014511955A
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English (en)
Japanese (ja)
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JP6005147B2 (ja
JP2014516210A (ja
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Priority claimed from GBGB1108864.8A external-priority patent/GB201108864D0/en
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Publication of JP2014516210A5 publication Critical patent/JP2014516210A5/ja
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JP2014511955A 2011-05-26 2012-05-24 トランジスタ及びその形成方法 Active JP6005147B2 (ja)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
GB1108864.8 2011-05-26
GBGB1108864.8A GB201108864D0 (en) 2011-05-26 2011-05-26 Transistors and methods of making them
GB1118867.9 2011-11-01
GBGB1118867.9A GB201118867D0 (en) 2011-05-26 2011-11-01 Transistors and methods for making them
GB1120997.0 2011-12-07
GBGB1120997.0A GB201120997D0 (en) 2011-05-26 2011-12-07 Transistors and methods for making them
GB1205022.5 2012-03-22
GBGB1205022.5A GB201205022D0 (en) 2011-05-26 2012-03-22 Transistors and methods for making them
PCT/GB2012/051170 WO2012160383A1 (en) 2011-05-26 2012-05-24 Transistors and methods for making them

Publications (3)

Publication Number Publication Date
JP2014516210A JP2014516210A (ja) 2014-07-07
JP2014516210A5 true JP2014516210A5 (enExample) 2015-07-09
JP6005147B2 JP6005147B2 (ja) 2016-10-12

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ID=44279658

Family Applications (1)

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JP2014511955A Active JP6005147B2 (ja) 2011-05-26 2012-05-24 トランジスタ及びその形成方法

Country Status (8)

Country Link
US (2) US9431145B2 (enExample)
EP (1) EP2715820B1 (enExample)
JP (1) JP6005147B2 (enExample)
KR (1) KR101987209B1 (enExample)
CN (2) CN107266680B (enExample)
GB (4) GB201108864D0 (enExample)
TW (1) TWI551624B (enExample)
WO (1) WO2012160383A1 (enExample)

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CN113321792A (zh) * 2020-04-21 2021-08-31 杭州领挚科技有限公司 三芳胺聚合物及其应用
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