CN103703581B - 晶体管及其制造方法 - Google Patents

晶体管及其制造方法 Download PDF

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Publication number
CN103703581B
CN103703581B CN201280025694.3A CN201280025694A CN103703581B CN 103703581 B CN103703581 B CN 103703581B CN 201280025694 A CN201280025694 A CN 201280025694A CN 103703581 B CN103703581 B CN 103703581B
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group
carbon atoms
independently
alkoxy
semiconducting
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Chinese (zh)
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CN103703581A (zh
Inventor
贝弗莉·安妮·布朗
西蒙·多米尼克·奥吉尔
马可·帕伦博
克里·劳拉·梅可
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Silfrey Ltd
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Centre for Process Innovation Ltd
Neudrive Ltd
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Application filed by Centre for Process Innovation Ltd, Neudrive Ltd filed Critical Centre for Process Innovation Ltd
Priority to CN201710437185.6A priority Critical patent/CN107266680B/zh
Publication of CN103703581A publication Critical patent/CN103703581A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/02—Polyamines
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/02—Polyamines
    • C08G73/026—Wholly aromatic polyamines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/12—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
    • H01B1/121—Charge-transfer complexes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
    • C09D179/02—Polyamines
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/24—Electrically-conducting paints
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/115—Polyfluorene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Composite Materials (AREA)
  • Thin Film Transistor (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
CN201280025694.3A 2011-05-26 2012-05-24 晶体管及其制造方法 Active CN103703581B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710437185.6A CN107266680B (zh) 2011-05-26 2012-05-24 晶体管及其制造方法

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
GB1108864.8 2011-05-26
GBGB1108864.8A GB201108864D0 (en) 2011-05-26 2011-05-26 Transistors and methods of making them
GB1118867.9 2011-11-01
GBGB1118867.9A GB201118867D0 (en) 2011-05-26 2011-11-01 Transistors and methods for making them
GB1120997.0 2011-12-07
GBGB1120997.0A GB201120997D0 (en) 2011-05-26 2011-12-07 Transistors and methods for making them
GB1205022.5 2012-03-22
GBGB1205022.5A GB201205022D0 (en) 2011-05-26 2012-03-22 Transistors and methods for making them
PCT/GB2012/051170 WO2012160383A1 (en) 2011-05-26 2012-05-24 Transistors and methods for making them

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201710437185.6A Division CN107266680B (zh) 2011-05-26 2012-05-24 晶体管及其制造方法

Publications (2)

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CN103703581A CN103703581A (zh) 2014-04-02
CN103703581B true CN103703581B (zh) 2017-06-09

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CN201710437185.6A Active CN107266680B (zh) 2011-05-26 2012-05-24 晶体管及其制造方法

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Country Status (8)

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US (2) US9431145B2 (enExample)
EP (1) EP2715820B1 (enExample)
JP (1) JP6005147B2 (enExample)
KR (1) KR101987209B1 (enExample)
CN (2) CN103703581B (enExample)
GB (4) GB201108864D0 (enExample)
TW (1) TWI551624B (enExample)
WO (1) WO2012160383A1 (enExample)

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US9444060B2 (en) 2014-04-29 2016-09-13 Sabic Global Technologies B.V. Synthesis of new small molecules/oligomers with high conductivity and absorption for optoelectronic application
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JP2016162961A (ja) * 2015-03-04 2016-09-05 東ソー株式会社 有機半導体層形成用溶液、有機半導体層、および有機薄膜トランジスタ
JP2017098489A (ja) * 2015-11-27 2017-06-01 東ソー株式会社 有機半導体層形成用溶液、有機半導体層、および有機薄膜トランジスタ
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CN106252362B (zh) * 2016-08-31 2019-07-12 深圳市华星光电技术有限公司 一种阵列基板及其制备方法
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CN111416039A (zh) 2019-01-07 2020-07-14 纽多维有限公司 制剂和层
CN111808269A (zh) * 2019-04-12 2020-10-23 纽多维有限公司 新型聚三芳基胺及其用途
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CN113321792A (zh) * 2020-04-21 2021-08-31 杭州领挚科技有限公司 三芳胺聚合物及其应用
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HK1245309A1 (zh) 2018-08-24
GB201120997D0 (en) 2012-01-18
CN103703581A (zh) 2014-04-02
EP2715820B1 (en) 2018-02-14
CN107266680B (zh) 2021-01-15
JP2014516210A (ja) 2014-07-07
CN107266680A (zh) 2017-10-20
GB201205022D0 (en) 2012-05-09
KR20140035434A (ko) 2014-03-21
WO2012160383A1 (en) 2012-11-29
US20140175409A1 (en) 2014-06-26
JP6005147B2 (ja) 2016-10-12
EP2715820A1 (en) 2014-04-09
GB201118867D0 (en) 2011-12-14
KR101987209B1 (ko) 2019-06-10
US20170005269A1 (en) 2017-01-05
US9431145B2 (en) 2016-08-30
GB201108864D0 (en) 2011-07-06
US10121970B2 (en) 2018-11-06
TW201319121A (zh) 2013-05-16
TWI551624B (zh) 2016-10-01

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