JP2014508414A - リソグラフィ装置、スペクトル純度フィルタおよびデバイス製造方法 - Google Patents

リソグラフィ装置、スペクトル純度フィルタおよびデバイス製造方法 Download PDF

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Publication number
JP2014508414A
JP2014508414A JP2013555773A JP2013555773A JP2014508414A JP 2014508414 A JP2014508414 A JP 2014508414A JP 2013555773 A JP2013555773 A JP 2013555773A JP 2013555773 A JP2013555773 A JP 2013555773A JP 2014508414 A JP2014508414 A JP 2014508414A
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radiation
spectral purity
lithographic apparatus
radiation beam
recesses
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Japanese (ja)
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JP2014508414A5 (enExample
Inventor
バニエ，バディム
ループストラ，エリック
モールス，ロエル
スホート，ジャン ヴァン
スウィンケルズ，ゲラルドス
ヤクニン，アンドレイ
ディゼルドンク，アントニウス ヴァン
ボエイ，ウィルヘルムス デ
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エーエスエムエル ネザーランズ ビー．ブイ．
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Publication of JP2014508414A publication Critical patent/JP2014508414A/ja
Publication of JP2014508414A5 publication Critical patent/JP2014508414A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1838—Diffraction gratings for use with ultraviolet radiation or X-rays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/281—Interference filters designed for the infrared light
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/283—Interference filters designed for the ultraviolet
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/067—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators using surface reflection, e.g. grazing incidence mirrors, gratings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/061—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements characterised by a multilayer structure
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Filters (AREA)
JP2013555773A 2011-03-04 2011-12-21 リソグラフィ装置、スペクトル純度フィルタおよびデバイス製造方法 Pending JP2014508414A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161449381P 2011-03-04 2011-03-04
US61/449,381 2011-03-04
PCT/EP2011/073537 WO2012119672A1 (en) 2011-03-04 2011-12-21 Lithograpic apparatus, spectral purity filter and device manufacturing method

Related Child Applications (1)

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JP2017078096A Division JP6420864B2 (ja) 2011-03-04 2017-04-11 スペクトル純度フィルタ、放射システム、及びコレクタ

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JP2014508414A true JP2014508414A (ja) 2014-04-03
JP2014508414A5 JP2014508414A5 (enExample) 2015-02-19

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JP2013555773A Pending JP2014508414A (ja) 2011-03-04 2011-12-21 リソグラフィ装置、スペクトル純度フィルタおよびデバイス製造方法
JP2017078096A Active JP6420864B2 (ja) 2011-03-04 2017-04-11 スペクトル純度フィルタ、放射システム、及びコレクタ

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US (2) US9594306B2 (enExample)
EP (1) EP2681625A1 (enExample)
JP (2) JP2014508414A (enExample)
TW (1) TWI534557B (enExample)
WO (1) WO2012119672A1 (enExample)

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JP2015510688A (ja) * 2012-01-19 2015-04-09 スプリヤ ジャイスワル リソグラフィ及び他の用途における極端紫外線放射で使用する材料、成分及び方法
JP2018511818A (ja) * 2015-02-10 2018-04-26 カール・ツァイス・エスエムティー・ゲーエムベーハー Ｅｕｖ多層ミラー、多層ミラーを含む光学系及び多層ミラーを製造する方法
JP2018527612A (ja) * 2015-08-25 2018-09-20 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置のための抑制フィルタ、放射コレクタ及び放射源、並びに抑制フィルタの少なくとも２つの反射面レベル間の分離距離を決定する方法

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JP2014508414A (ja) 2011-03-04 2014-04-03 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置、スペクトル純度フィルタおよびデバイス製造方法
KR102262448B1 (ko) * 2013-01-28 2021-06-09 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치를 위한 방사선 소스, 거울 및 투영 시스템
CN106489084B (zh) * 2014-07-04 2020-10-30 Asml荷兰有限公司 用于光刻设备内的膜和包括这种膜的光刻设备
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US10691024B2 (en) * 2018-01-26 2020-06-23 Kla-Tencor Corporation High-power short-pass total internal reflection filter
DE102018220629A1 (de) * 2018-11-29 2020-06-04 Carl Zeiss Smt Gmbh Spiegel für eine Beleuchtungsoptik einer Projektionsbelichtungsanlage mit einem Spektralfilter in Form einer Gitterstruktur und Verfahren zur Herstellung eines Spektralfilters in Form einer Gitterstruktur auf einem Spiegel
CN113841071B (zh) * 2019-05-21 2025-01-24 Asml荷兰有限公司 用于光刻装置的反射镜
DE102019212017A1 (de) * 2019-08-09 2021-02-11 Carl Zeiss Smt Gmbh Optisches Beleuchtungssystem zur Führung von EUV-Strahlung
DE102019213063A1 (de) * 2019-08-30 2021-03-04 Carl Zeiss Smt Gmbh Optische Beugungskomponente
JP7403271B2 (ja) * 2019-10-10 2023-12-22 ギガフォトン株式会社 極端紫外光集光ミラー、極端紫外光生成装置、及び電子デバイスの製造方法
US11511524B2 (en) * 2020-03-11 2022-11-29 LabForInvention Energy-efficient window coatings transmissible to wireless communication signals and methods of fabricating thereof
DE102020212367A1 (de) * 2020-09-30 2022-03-31 Carl Zeiss Smt Gmbh Optische Komponente
DE102021214237A1 (de) 2021-12-13 2022-12-22 Carl Zeiss Smt Gmbh Beleuchtungsoptik für eine EUV-Projektionsbelichtungsanlage
DE102022202059A1 (de) * 2022-03-01 2023-09-07 Carl Zeiss Smt Gmbh Verfahren zum Bearbeiten eines Werkstücks
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015510688A (ja) * 2012-01-19 2015-04-09 スプリヤ ジャイスワル リソグラフィ及び他の用途における極端紫外線放射で使用する材料、成分及び方法
JP2018511818A (ja) * 2015-02-10 2018-04-26 カール・ツァイス・エスエムティー・ゲーエムベーハー Ｅｕｖ多層ミラー、多層ミラーを含む光学系及び多層ミラーを製造する方法
JP2018527612A (ja) * 2015-08-25 2018-09-20 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置のための抑制フィルタ、放射コレクタ及び放射源、並びに抑制フィルタの少なくとも２つの反射面レベル間の分離距離を決定する方法

Also Published As

Publication number Publication date
TWI534557B (zh) 2016-05-21
US20170160646A1 (en) 2017-06-08
EP2681625A1 (en) 2014-01-08
WO2012119672A1 (en) 2012-09-13
US10001709B2 (en) 2018-06-19
US9594306B2 (en) 2017-03-14
TW201237565A (en) 2012-09-16
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US20140085619A1 (en) 2014-03-27
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