JP2014502653A - 導電性高分子材料並びにその製造方法及び応用 - Google Patents
導電性高分子材料並びにその製造方法及び応用 Download PDFInfo
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- 229920001940 conductive polymer Polymers 0.000 title claims abstract description 88
- 239000002861 polymer material Substances 0.000 title claims abstract description 62
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 50
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 82
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 81
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims abstract description 72
- 229920000767 polyaniline Polymers 0.000 claims abstract description 5
- 229920000128 polypyrrole Polymers 0.000 claims abstract description 5
- 229920000123 polythiophene Polymers 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 35
- 239000000178 monomer Substances 0.000 claims description 29
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 claims description 26
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 25
- 239000011737 fluorine Substances 0.000 claims description 25
- 229910052731 fluorine Inorganic materials 0.000 claims description 25
- 238000006116 polymerization reaction Methods 0.000 claims description 14
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 10
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000004094 surface-active agent Substances 0.000 claims description 10
- 239000003792 electrolyte Substances 0.000 claims description 8
- 229930192474 thiophene Natural products 0.000 claims description 5
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 claims description 4
- 238000005401 electroluminescence Methods 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- 229910001416 lithium ion Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 239000002280 amphoteric surfactant Substances 0.000 claims description 3
- 239000003945 anionic surfactant Substances 0.000 claims description 3
- 239000003093 cationic surfactant Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 239000002736 nonionic surfactant Substances 0.000 claims description 3
- 238000009776 industrial production Methods 0.000 abstract description 3
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 17
- 239000001103 potassium chloride Substances 0.000 description 13
- 235000011164 potassium chloride Nutrition 0.000 description 13
- 229910001873 dinitrogen Inorganic materials 0.000 description 9
- 238000001035 drying Methods 0.000 description 9
- WBIQQQGBSDOWNP-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O WBIQQQGBSDOWNP-UHFFFAOYSA-N 0.000 description 7
- 229940060296 dodecylbenzenesulfonic acid Drugs 0.000 description 7
- 239000001307 helium Substances 0.000 description 7
- 229910052734 helium Inorganic materials 0.000 description 7
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 7
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- -1 aliphatic alcohol sulfates Chemical class 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 3
- 235000010333 potassium nitrate Nutrition 0.000 description 3
- 239000004323 potassium nitrate Substances 0.000 description 3
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229940051841 polyoxyethylene ether Drugs 0.000 description 2
- 229920000056 polyoxyethylene ether Polymers 0.000 description 2
- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 description 2
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical group C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000004996 alkyl benzenes Chemical group 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 239000006258 conductive agent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- AXZAYXJCENRGIM-UHFFFAOYSA-J dipotassium;tetrabromoplatinum(2-) Chemical compound [K+].[K+].[Br-].[Br-].[Br-].[Br-].[Pt+2] AXZAYXJCENRGIM-UHFFFAOYSA-J 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 150000002462 imidazolines Chemical group 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000003014 phosphoric acid esters Chemical class 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 235000007686 potassium Nutrition 0.000 description 1
- VKJKEPKFPUWCAS-UHFFFAOYSA-M potassium chlorate Chemical compound [K+].[O-]Cl(=O)=O VKJKEPKFPUWCAS-UHFFFAOYSA-M 0.000 description 1
- 235000007715 potassium iodide Nutrition 0.000 description 1
- 229910001487 potassium perchlorate Inorganic materials 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 description 1
- 235000009518 sodium iodide Nutrition 0.000 description 1
- 235000010344 sodium nitrate Nutrition 0.000 description 1
- 239000004317 sodium nitrate Substances 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- KVCGISUBCHHTDD-UHFFFAOYSA-M sodium;4-methylbenzenesulfonate Chemical compound [Na+].CC1=CC=C(S([O-])(=O)=O)C=C1 KVCGISUBCHHTDD-UHFFFAOYSA-M 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- YMBCJWGVCUEGHA-UHFFFAOYSA-M tetraethylammonium chloride Chemical compound [Cl-].CC[N+](CC)(CC)CC YMBCJWGVCUEGHA-UHFFFAOYSA-M 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
本発明の実施形態により提供される導電性高分子材料は、導電性ポリマーと、前記導電性ポリマー中にドープされたフッ化グラフェンとを含み、前記導電性ポリマーとフッ化グラフェンとの質量比は1:0.05〜1であり、前記導電性ポリマーは、ポリチオフェン又はその誘導体、ポリピロール又はその誘導体、及びポリアニリン又はその誘導体から選ばれる1種である。
S01:フッ化グラフェンを界面活性剤含有溶液に溶解して第一溶液を得る第一溶液の製造工程
S02:有機単量体とフッ化グラフェンとの質量比が1:0.05〜1になるように、有機単量体を前記第一溶液に加えた後、電解質を加え、作動電極及び対電極を設置し、次に、通電して電気化学的重合を行って導電性高分子材料を得る導電性高分子材料の製造工程
(1)フッ化グラフェンの製造
グラフェンを乾燥装置に入れて24時間乾燥した後、反応器に入れ、まず、乾燥した窒素ガスを0.5時間導入した後、フッ素ガスを導入し、300℃の温度下で12時間反応させて、フッ化グラフェンを得た。
(2)第一溶液の製造
前記フッ化グラフェンに、0.5モル/Lのドデシルベンゼンスルホン酸含有溶液中で30分間の超音波振動を行って、フッ化グラフェンの質量比が0.035%である第一溶液を得た。
(3)導電性高分子材料の製造
チオフェン単量体の濃度が0.5モル/Lになるように、第一溶液にチオフェン単量体を加えて第二溶液を得た後、塩化カリウム濃度が0.3モル/Lになるように、第二溶液に塩化カリウムを加えて第三溶液を得た。
次に、作動電極及び対電極を第三溶液中に設置し、作動電極に電流密度10mA/cm2の電流を印加して電気化学的重合反応を行い、導電性高分子材料を得た。
(1)フッ化グラフェンの製造
グラフェンを乾燥装置に入れて24時間乾燥した後、反応器に入れ、まず、乾燥した窒素ガスを0.5時間導入した後、フッ素ガスが全体積の20%を占めるフッ素及び窒素の混合ガスを導入し、100℃の温度下で75時間反応させて、フッ化グラフェンを得た。
(2)第一溶液の製造
前記フッ化グラフェンに、0.01モル/Lのドデシルベンゼンスルホン酸含有溶液中で5分間の超音波振動を行って、フッ化グラフェンの質量比が0.056%である第一溶液を得た。
(3)導電性高分子材料の製造
ピロール単量体の濃度が0.01モル/Lになるように、第一溶液にピロール単量体を加えて第二溶液を得た後、硝酸カリウム濃度が0.02モル/Lになるように、第二溶液に硝酸カリウムを加えて第三溶液を得た。
次に、作動電極及び対電極を第三溶液中に設置し、作動電極に電流密度10mA/cm2の電流を印加して電気化学的重合反応を行い、導電性高分子材料を得た。
(1)フッ化グラフェンの製造
グラフェンを乾燥装置に入れて24時間乾燥した後、反応器に入れ、まず、乾燥した窒素ガスを0.5時間導入した後、フッ素ガスが全体積の30%を占めるフッ素及びヘリウムの混合ガスを導入し、250℃の温度下で86時間反応させて、フッ化グラフェンを得た。
(2)第一溶液の製造
前記フッ化グラフェンに、0.25モル/Lのドデシルベンゼンスルホン酸含有溶液中で110分間の超音波振動を行って、フッ化グラフェンの質量比が0.025%である第一溶液を得た。
(3)導電性高分子材料の製造
アニリン単量体の濃度が0.25モル/Lになるように、第一溶液にアニリン単量体を加えて第二溶液を得た。その後、塩化カリウムの濃度が0.1モル/Lになるように、第二溶液に塩化カリウムを加えて第三溶液を得た。
次に、作動電極及び対電極を第三溶液中に設置し、作動電極に電流密度10mA/cm2の電流を印加して電気化学的重合反応を行い、導電性高分子材料を得た。
(1)フッ化グラフェンの製造
グラフェンを乾燥装置に入れて24時間乾燥した後、反応器に入れ、まず、乾燥した窒素ガスを0.5時間導入した後、フッ素ガスが全体積の10%を占めるフッ素及びヘリウムの混合ガスを導入し、450℃の温度下で45時間反応させてフッ化グラフェンを得た。
(2)第一溶液の製造
前記フッ化グラフェンに、0.6モル/Lのドデシルベンゼンスルホン酸含有溶液中で15分間の超音波振動を行って、フッ化グラフェンの質量比が0.01%である第一溶液を得た。
(3)導電性高分子材料の製造
アニリン単量体の濃度が0.6モル/Lになるように、第一溶液にアニリン単量体を加えて第二溶液を得た。その後、塩化カリウムの濃度が0.2モル/Lになるように、第二溶液に塩化カリウムを加えて第三溶液を得た。
次に、作動電極及び対電極を第三溶液中に設置し、作動電極に電流密度10mA/cm2の電流を印加して電気化学的重合反応を行い、導電性高分子材料を得た。
(1)フッ化グラフェンの製造
グラフェンを乾燥装置に入れて24時間乾燥した後、反応器に入れ、まず、乾燥した窒素ガスを0.5時間導入した後、フッ素ガスが全体積の10%を占めるフッ素及びヘリウムの混合ガスを導入し、50℃の温度下で120時間反応させてフッ化グラフェンを得た。
(2)第一溶液の製造
前記フッ化グラフェンに、0.1モル/Lのドデシルベンゼンスルホン酸含有溶液中で2時間の超音波振動を行って、フッ化グラフェンの質量比が0.1%である第一溶液を得た。
(3)導電性高分子材料の製造
アニリン単量体の濃度が0.1モル/Lになるように、第一溶液にアニリン単量体を加えて第二溶液を得た。その後、塩化カリウムの濃度が0.025モル/Lになるように、第二溶液に塩化カリウムを加えて第三溶液を得た。
次に、作動電極及び対電極を第三溶液中に設置し、作動電極に電流密度0.1mA/cm2の電流を印加して電気化学的重合反応を行い、導電性高分子材料を得た。
(1)フッ化グラフェンの製造
グラフェンを乾燥装置に入れて24時間乾燥した後、反応器に入れ、まず、乾燥した窒素ガスを0.5時間導入した後、フッ素ガスが全体積の15%を占めるフッ素及びヘリウムの混合ガスを導入し、500℃の温度下で3時間反応させてフッ化グラフェンを得た。
(2)第一溶液の製造
前記フッ化グラフェンに、0.45モル/Lのドデシルベンゼンスルホン酸含有溶液中で1時間の超音波振動を行って、フッ化グラフェンの質量比が0.06%である第一溶液を得た。
(3)導電性高分子材料の製造
アニリン単量体の濃度が0.45モル/Lになるように、第一溶液にアニリン単量体を加えて第二溶液を得た。その後、塩化カリウムの濃度が0.3モル/Lになるように、第二溶液に塩化カリウムを加えて第三溶液を得た。
次に、作動電極及び対電極を第三溶液中に設置し、作動電極に電流密度7mA/cm2の電流を印加して電気化学的重合反応を行い、導電性高分子材料を得た。
(1)フッ化グラフェンの製造
グラフェンを乾燥装置に入れて24時間乾燥した後、反応器に入れ、まず、乾燥した窒素ガスを0.5時間導入した後、フッ素ガスが全体積の17%を占めるフッ素及びヘリウムの混合ガスを導入し、150℃の温度下で65時間反応させてフッ化グラフェンを得た。
(2)第一溶液の製造
前記フッ化グラフェンに、0.035モル/Lのドデシルベンゼンスルホン酸含有溶液中で15分間の超音波振動を行って、フッ化グラフェンの質量比が0.08%である第一溶液を得た。
(3)導電性高分子材料の製造
アニリン単量体の濃度が0.035モル/Lになるように、第一溶液にアニリン単量体を加えて第二溶液を得た。その後、塩化カリウムの濃度が0.3モル/Lになるように、第二溶液に塩化カリウムを加えて第三溶液を得た。
次に、作動電極及び対電極を第三溶液中に設置し、作動電極に電流密度7mA/cm2の電流を印加して電気化学的重合反応を行い、導電性高分子材料を得た。
Claims (10)
- 導電性ポリマーと、前記導電性ポリマーにドープされたフッ化グラフェンとを含み、
前記導電性ポリマーとフッ化グラフェンとの質量比が1:0.05〜1であり、
前記導電性ポリマーは、ポリチオフェン又はその誘導体、ポリピロール又はその誘導体、及びポリアニリン又はその誘導体から選ばれる1種であることを特徴とする導電性高分子材料。 - 前記導電性ポリマーとフッ化グラフェンとの質量比は1:0.5〜1であることを特徴とする請求項1に記載の導電性高分子材料。
- フッ化グラフェンを界面活性剤含有溶液に溶解して第一溶液を得る工程と、
有機単量体と前記フッ化グラフェンとの質量比が1:0.05〜1になるように、有機単量体を前記第一溶液に加えた後、電解質を加え、作動電極及び対電極を設置し、次に、通電して電気化学的重合を行って導電性高分子材料を得る工程とを含み、
前記有機単量体は、アニリン又はその誘導体、ピロール又はその誘導体、及びチオフェン又はその誘導体から選ばれる1種であることを特徴とする導電性高分子材料の製造方法。 - 無水無酸素の条件下で、グラフェンを反応器に入れた後、フッ素ガスを導入するか、又はフッ素ガス及び不活性ガスの混合ガスを導入し、50〜500℃の温度下で3〜120時間反応させて、フッ化グラフェンを得るフッ化グラフェンの製造工程をさらに含むことを特徴とする請求項3に記載の導電性高分子材料の製造方法。
- 前記界面活性剤は、アニオン界面活性剤、カチオン界面活性剤、ノニオン界面活性剤、又は両性界面活性剤であることを特徴とする請求項3に記載の導電性高分子材料の製造方法。
- 前記作動電極は、スーパーキャパシタ電極板の基材であることを特徴とする請求項5に記載の導電性高分子材料の製造方法。
- 前記第一溶液におけるフッ化グラフェンの質量比は0.01〜0.1%であることを特徴とする請求項3に記載の導電性高分子材料の製造方法。
- 前記有機単量体を前記第一溶液に加えた後、前記有機単量体の濃度は0.01〜0.6モル/Lであることを特徴とする請求項3に記載の導電性高分子材料の製造方法。
- 前記電気化学的重合において印加する電流密度は0.1−10mA/cm2であることを特徴とする請求項3に記載の導電性高分子材料の製造方法。
- 請求項1又は2に記載の導電性高分子材料の太陽電池、有機エレクトロルミネッセンス素子、リチウムイオン電池、又はスーパーキャパシタにおける応用。
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