CN104992987B - 氟化石墨烯作为高阻层的太阳能电池及其制备方法 - Google Patents
氟化石墨烯作为高阻层的太阳能电池及其制备方法 Download PDFInfo
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- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 18
- 239000012286 potassium permanganate Substances 0.000 claims description 14
- 229910021389 graphene Inorganic materials 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 239000006185 dispersion Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 6
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 6
- 230000004044 response Effects 0.000 claims description 6
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 229960002163 hydrogen peroxide Drugs 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- -1 polytetrafluoroethylene Polymers 0.000 claims description 4
- 239000000243 solution Substances 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 239000005457 ice water Substances 0.000 claims description 3
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical group O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- 238000001556 precipitation Methods 0.000 claims description 3
- 235000010344 sodium nitrate Nutrition 0.000 claims description 3
- 239000004317 sodium nitrate Substances 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 6
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 230000005641 tunneling Effects 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 15
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 10
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 229910052731 fluorine Inorganic materials 0.000 description 5
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 description 3
- 125000001153 fluoro group Chemical group F* 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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Abstract
本发明公开了一种氟化石墨烯薄膜作为高阻层的太阳能电池。在太阳能电池中,电池的结构从下到上依次为作为背电极的金属薄膜层、背接触层、吸收层、窗口层、氟化石墨烯高阻层和透明导电薄膜层。0.34~20nm厚的氟化石墨烯薄膜代替本征氧化物作为新型高阻层,可以减少不同薄膜之间原子的扩散,提高界面性质,可以避免因窗口层薄膜的针孔效应引起的电池短路,进一步提高电池的效率。相比于传统高阻层,厚度较薄的氟化石墨烯薄膜更有益于电子的隧穿效应,以及电子的转移和收集。
Description
技术领域
本发明涉及一种太阳能电池新,具体地涉及一种以氟化石墨烯薄膜为高阻层的太阳能电池及其制备方法。
背景技术
近年来,石墨烯以其独特的二维纳米结构和优异的电学和热学性能,吸引了广大的科学研究者的关注。石墨烯的功能化产生了石墨烯衍生物,拓宽了石墨烯的广泛应用领域。石墨烯的衍生物包括氧化石墨烯,氢化石墨烯和氟化石墨烯。新型氟化石墨烯通常用水热法、物理剥离法或等离子体法制得。在氟化石墨烯表面,氟原子与碳原子以共价键的形式结合,将石墨烯从二维变为三维结构,也使得其完成了从导体到向半导体或绝缘体的转变。在氟化过程中,如果石墨烯只有一面暴露在氟源中,氟原子的覆盖率到达25%(C4F),能带隙增加为2.93eV,而当石墨烯两面都暴露在氟源中,氟原子的覆盖率为100%(CF)时,能带隙为3.07eV。
氟化石墨烯是目前已知的最薄的绝缘体,透光率高,且化学、热力学性能稳定、表面能低,可应用在纳米电子器件、光电子器件、以及热电装置等领域可作为。此外,氟化石墨烯耐高温、耐腐蚀、耐摩擦等特性,所以可以作为钝化层,抑制金属薄膜表面被氧化也可以阻挡不同薄膜之间的原子的扩散。
以碲化镉薄膜太阳能电池为例,硫化镉(CdS)窗口层为重掺杂N型区,碲化镉(CdTe)吸收层为轻掺P型区,形成了异质结结构。当光照射到太阳能电池上,在PN结处会产生电子空穴对,将光能转换成电能。为了提高光能转换效率,透明导电薄膜电极(TCEs)要具有较高的透光率,使得更多的光能传送到PN结。另外,硫化镉通常厚度较薄而碲化镉较厚,使得内部电场集中在碲化镉区域,以促进在CdTe层产生的电子空穴对的分离。然而当硫化镉厚度较薄时,硫化镉薄膜产生针孔效应,即出现不连续的区域,导致了CdTe和前电极TCE之间的直接接触,产生过多的分流,影响了太阳能电池的效率。通常解决这个问题的方案是在透明电极和硫化镉薄膜之间增加一层本征氧化物(如i-ZnO)高阻层。但是,以高阻层为氧化锌为例,氧化锌薄膜的有效厚度范围为80-200nm,不利于在CdTe/CdS形成的异质结处产生的电子遂穿通过氧化锌到达前电极。此外,它的透光率也是有一定的限制(~81%)。
发明内容
鉴于以上所述技术存在的缺陷,本发明目的:提供一种氟化石墨烯作为高阻层的太阳能电池,在太阳能电池中,以0.34~20nm厚的氟化石墨烯薄膜代替本征氧化物作为高阻层。该太阳能电池具有更好的光传输率,提高了太阳能电池的光转换效率。
本发明的技术方案是:
一种氟化石墨烯作为高阻层的太阳能电池,所述太阳能电池包括从下到上依次为作为背电极的金属薄膜层、背接触层、吸收层、窗口层、氟化石墨烯高阻层和透明导电薄膜层。
优选的,所述氟化石墨烯高阻层的厚度为0.34-20nm。
优选的,所述氟化石墨烯薄膜由以下步骤制备得到:
(1)在冰水浴中将石墨粉、硝酸钠和浓硫酸混合均匀,然后加入高锰酸钾,搅拌;
(2)将(1)中的混合液加温至35-500C,持续搅拌5-8h,然后加入高锰酸钾,保持温度,反应8-14h;
(3)将上述液体冷却至室温,然后加入过氧化氢溶液反应;
(4)待反应结束,将溶液离心,取出沉淀,用去离子水、盐酸和无水乙醇的混合溶液进行过滤,最后干燥,研磨,得到氧化石墨烯粉;
(5)在得到的氧化石墨烯粉中加入去离子水,经过超声处理得到氧化石墨烯分散液;
(6)将上述分散液加入带有聚四氟乙烯的内衬的水热釜内,同时加入氢氟酸,将水热釜密封,并置于烘箱内,待反应完成,冷却至室温;
(7)最后过滤、洗涤、烘干,得到氟化石墨烯薄膜。
优选的,所述步骤(1)中的高锰酸钾与步骤(2)中的高锰酸钾的重量相等,其中步骤(1)的高锰酸钾等分后依次缓慢加入混合液中,步骤(2)的高锰酸钾一次性加入混合液中。
优选的,所述盐酸和过氧化氢溶液的浓度都为30%。
本发明还公开了一种以氟化石墨烯为高阻层的太阳能电池的制备方法,包括以蒸镀有透明氧化薄膜层的玻璃为衬底,将制备得到的氟化石墨烯旋涂到该衬底上,烘干;然后依次生长窗口层、吸收层、背接触层和作为背电极的金属薄膜层形成太阳电池。
优选的,所述透明氧化薄膜层为氧化铟锡。
本发明的优点是:
1)本发明所提出的太阳能电池的制备方法,成本低廉,操作方便。而且生产的氟化石墨烯薄膜纯度高,质量好。
2)氟化石墨烯具有比传统高阻层具有更薄的物理厚度所以有更好的光传输率,提高了太阳能电池的光转换效率。
3)氟化石墨烯能作为钝化层,抑制金属薄膜表面被氧化和阻挡不同薄膜之间原子的扩散,减少了热退火过程中玻璃中的钠离子进入PN结耗尽层以及窗口层扩散进入透明导电薄膜层,保证了器件的可靠性。
4)氟化石墨烯具有比传统高阻层具有更薄的物理厚度,所以促进了电子的隧穿效应,从而使电子更容易扩散到透明导电薄膜电极端,使得电子空穴对有效的分离,提高了太阳能电池的光转换效率。
附图说明
下面结合附图及实施例对本发明作进一步描述:
图1为碲化镉薄膜太阳能电池的结构示意图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚明了,下面结合具体实施方式并参照附图,对本发明进一步详细说明。应该理解,这些描述只是示例性的,而并非要限制本发明的范围。此外,在以下说明中,省略了对公知结构和技术的描述,以避免不必要地混淆本发明的概念。
实施例1
如图1所示,一种以氟化石墨烯薄膜作为高阻层的碲化镉薄膜太阳能电池,太阳能电池最下层为金属薄膜层10,在金属薄膜层10上设置有背接触层20,在背接触层20上设置吸收层30,该吸收层30材料可以为碲化镉,在吸收层30上设置窗口层40,该窗口层40的材料可以为硫化镉,在窗口层40上为氟化石墨烯高阻层50,最上层为透明导电薄膜层60。
氟化石墨烯高阻层50的厚度为0.34-20nm。
一种碲化镉薄膜太阳能电池的制备方法,以蒸镀有透明氧化薄膜层(例如可以为氧化铟锡)的玻璃为衬底,将制备得到的氟化石墨烯旋涂到该衬底上,烘干;然后依次生长硫化镉、碲化镉和背接触金属形成碲化镉薄膜太阳电池。该方法成本低廉,操作方便,得到的太阳能电池质量好。
在碲化镉薄膜太阳能电池中,氟化石墨烯薄膜可以代替传统高阻层,例如本征氧化锌(i-ZnO)。与氧化锌层相比,较薄的氟化石墨烯薄膜不仅可以避免硫化镉薄膜的针孔效应导致的漏电流和氧化锌粗糙的表面对太阳能电池效率的影响,而且降低了物理厚度,促进了电子隧穿效应,更有益于电子的转移和收集。
上述的氟化石墨烯薄膜可以通过以下方法制备得到,该制备方法包括以下步骤:
步骤一氧化石墨烯薄膜的制备:
在冰水浴中将3g石墨粉、1.5g硝酸钠和69mL浓硫酸混合均匀,在200C的温度环境中,将9g的高锰酸钾等分后依次缓慢加入混合液中,搅拌。
然后加温至350C,持续搅拌7h。之后,将另外9g的高锰酸钾一次性加入混合液中,保持温度,反应时间为12h。
再将400mL的冰水加入上述液体中,使其冷却至室温。
然后向加入3mL浓度为30%的过氧化氢溶液,待反应结束,将溶液离心,取出沉淀,用各200mL的去离子水、浓度为30%盐酸和无水乙醇的混合溶液进行过滤,最后干燥,研磨,得到氧化石墨烯粉。
步骤二氟化石墨烯的制备:
将100mg的氧化石墨烯加入100mL去离子水中,经过超声处理30min得到氧化石墨烯分散液。
将上述分散液加入带有聚四氟乙烯的内衬的水热釜内,同时加入一定量的氢氟酸,将水热釜密封,并置于烘箱内,在一定的时间内保持温度。
待反应完成,冷却至室温。最后过滤,洗涤,烘干,得到氟化石墨烯。
应当理解的是,本发明的上述具体实施方式仅仅用于示例性说明或解释本发明的原理,而不构成对本发明的限制。因此,在不偏离本发明的精神和范围的情况下所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。此外,本发明所附权利要求旨在涵盖落入所附权利要求范围和边界、或者这种范围和边界的等同形式内的全部变化和修改例。
Claims (7)
1.一种氟化石墨烯作为高阻层的太阳能电池,其特征在于,所述太阳能电池包括从下到上依次为作为背电极的金属薄膜层、背接触层、吸收层、窗口层、氟化石墨烯高阻层和透明导电薄膜层。
2.根据权利要求1所述的太阳能电池,其特征在于,所述氟化石墨烯高阻层的厚度为0.34-20nm。
3.根据权利要求1所述的太阳能电池,其特征在于,所述氟化石墨烯薄膜由以下步骤制备得到:
(1)在冰水浴中将石墨粉、硝酸钠和浓硫酸混合均匀,然后加入高锰酸钾,搅拌;
(2)将(1)中的混合液加温至35-500C,持续搅拌5-8h,然后加入高锰酸钾,保持温度,反应8-14h;
(3)将(2)中的液体冷却至室温,然后加入过氧化氢溶液反应;
(4)待反应结束,将溶液离心,取出沉淀,用去离子水、盐酸和无水乙醇的混合溶液进行过滤,最后干燥,研磨,得到氧化石墨烯粉;
(5)在得到的氧化石墨烯粉中加入去离子水,经过超声处理得到氧化石墨烯分散液;
(6)将上述分散液加入带有聚四氟乙烯的内衬的水热釜内,同时加入氢氟酸,将水热釜密封,并置于烘箱内,待反应完成,冷却至室温;
(7)最后过滤、洗涤、烘干,得到氟化石墨烯薄膜。
4.根据权利要求3所述的太阳能电池,其特征在于,所述步骤(1)中的高锰酸钾与步骤(2)中的高锰酸钾的重量相等,其中步骤(1)的高锰酸钾等分后依次缓慢加入混合液中,步骤(2)的高锰酸钾一次性加入混合液中。
5.根据权利要求3所述的太阳能电池,其特征在于,所述盐酸和过氧化氢溶液的浓度都为30%。
6.一种氟化石墨烯作为高阻层的太阳能电池的制备方法,其特征在于,包括以蒸镀有透明氧化薄膜层的玻璃为衬底,将制备得到的氟化石墨烯旋涂到该衬底上,烘干;然后依次生长窗口层、吸收层、背接触层和作为背电极的背接触金属,形成太阳电池。
7.根据权利要求6所述的太阳能电池的制备方法,其特征在于,所述透明氧化薄膜层为氧化铟锡。
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