JP2014212245A - 基板固定冶具およびエピタキシャル基板 - Google Patents
基板固定冶具およびエピタキシャル基板 Download PDFInfo
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- JP2014212245A JP2014212245A JP2013088402A JP2013088402A JP2014212245A JP 2014212245 A JP2014212245 A JP 2014212245A JP 2013088402 A JP2013088402 A JP 2013088402A JP 2013088402 A JP2013088402 A JP 2013088402A JP 2014212245 A JP2014212245 A JP 2014212245A
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- 239000000758 substrate Substances 0.000 title claims abstract description 350
- 210000000078 claw Anatomy 0.000 claims abstract description 91
- 239000013078 crystal Substances 0.000 claims abstract description 15
- 238000001947 vapour-phase growth Methods 0.000 claims description 38
- 230000002159 abnormal effect Effects 0.000 abstract description 30
- 230000007423 decrease Effects 0.000 abstract description 8
- 230000002093 peripheral effect Effects 0.000 description 64
- 230000015572 biosynthetic process Effects 0.000 description 36
- 238000002791 soaking Methods 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 11
- 238000012986 modification Methods 0.000 description 9
- 230000004048 modification Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 239000012495 reaction gas Substances 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 7
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- -1 hydrogen compound Chemical class 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
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- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
Abstract
Description
はじめに、図1および図2を参照して、実施の形態1に係る基板固定冶具について説明する。実施の形態1に係る基板固定冶具100は、フェイスダウン方式である気相成長装置に取り付け可能に構成されている。基板固定冶具100は保持部1と爪部2とを備える。図1は、基板10を保持している状態において、基板10の表面(成長面)10A側から見たときの基板固定冶具100の概略図である。図2は、図1中の線分II−IIにおける断面図であり、基板10を保持している状態を示している。
次に、本発明の実施の形態2について説明する。実施の形態2に係る基板固定冶具およびエピタキシャル基板は、基本的には実施の形態1と同様の構成を備えるが、爪部2を、エピタキシャル基板におけるチップ形成領域11の配置に応じて配置する点で異なる。
次に、本発明の実施の形態3について説明する。本実施の形態に係る基板固定冶具200は、フェイスダウン方式である気相成長装置に取り付け可能に構成されている。図16、図17および図18を参照して、基板固定冶具200は保持部1と爪部2とを備える。図16は、基板10を保持している状態において、基板10の表面(成長面)10A側から見たときの基板固定冶具200の概略図である。図17は、図16中の線分XVII−XVIIにおける断面図であり、基板10を保持している状態を示している。図18は、図16中の線分XVIII−XVIIIにおける断面図であり、基板10を保持している状態を示している。
Claims (4)
- 基板を保持した状態で、気相成長装置に取り付け可能な基板固定冶具であって、
前記基板において成長面の反対側に位置する裏面と対向し、前記基板の外径よりも大きい保持部と、
前記保持部と接続されており、前記基板を保持した状態において前記基板の周囲から前記基板の前記成長面上に延びて前記基板と接触する複数の爪部と、
前記基板固定冶具に保持された前記基板において、前記基板の結晶方位を示す部位の前記保持部に対する位置を決定する位置決め部材とを備える、基板固定冶具。 - 前記位置決め部材は、前記爪部が前記基板においてチップが形成される領域と重ならないように、前記部位の前記保持部に対する位置を決定する、請求項1に記載の基板固定冶具。
- 前記位置決め部材は、前記爪部が前記領域から1.5mm以上離れるように、前記部位の前記保持部に対する位置を決定する、請求項1または2に記載の基板固定冶具。
- 請求項1〜3のいずれか1項に記載の基板固定冶具を備える気相成長装置を用いて製造されたエピタキシャル層を含む、エピタキシャル基板。
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JP2013088402A JP6135272B2 (ja) | 2013-04-19 | 2013-04-19 | 基板固定冶具 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160240398A1 (en) * | 2015-02-12 | 2016-08-18 | Hermes-Epitek Corporation | Wafer Holder |
CN109797379A (zh) * | 2017-11-16 | 2019-05-24 | 三星电子株式会社 | 包括上喷头和下喷头的沉积设备 |
CN111183248A (zh) * | 2019-05-20 | 2020-05-19 | 厦门三安光电有限公司 | 一种用于基板上生长薄膜的承载盘、生长装置和生长方法 |
US11345998B2 (en) | 2017-11-16 | 2022-05-31 | Samsung Electronics Co., Ltd. | Deposition apparatus including upper shower head and lower shower head |
CN114686858A (zh) * | 2020-12-30 | 2022-07-01 | 中微半导体设备(上海)股份有限公司 | 一种薄膜生长系统以及基片托盘和载环组件 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0963966A (ja) * | 1995-08-24 | 1997-03-07 | Toshiba Microelectron Corp | 気相成長装置 |
JPH10216606A (ja) * | 1997-02-06 | 1998-08-18 | Dainippon Screen Mfg Co Ltd | 回転式基板処理装置および基板回転保持装置ならびにその設計方法 |
JP2001525997A (ja) * | 1997-05-20 | 2001-12-11 | 東京エレクトロン株式会社 | 処理装置 |
JP2003234297A (ja) * | 2002-02-08 | 2003-08-22 | Dowa Mining Co Ltd | 気相薄膜成長装置および気相薄膜成長方法 |
JP2004055672A (ja) * | 2002-07-17 | 2004-02-19 | Nikko Materials Co Ltd | 化学気相成長装置および化学気相成長方法 |
JP2005086132A (ja) * | 2003-09-11 | 2005-03-31 | Hitachi Kokusai Electric Inc | 熱処理装置、半導体装置の製造方法、基板の製造方法及び基板処理方法 |
JP2008091615A (ja) * | 2006-10-02 | 2008-04-17 | Sharp Corp | 被加工処理基板、その製造方法およびその加工処理方法 |
JP2011018662A (ja) * | 2009-07-07 | 2011-01-27 | Panasonic Corp | 気相成長装置 |
JP2012084691A (ja) * | 2010-10-12 | 2012-04-26 | Toyota Motor Corp | 成膜装置と成膜装置用の支持台 |
-
2013
- 2013-04-19 JP JP2013088402A patent/JP6135272B2/ja active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0963966A (ja) * | 1995-08-24 | 1997-03-07 | Toshiba Microelectron Corp | 気相成長装置 |
JPH10216606A (ja) * | 1997-02-06 | 1998-08-18 | Dainippon Screen Mfg Co Ltd | 回転式基板処理装置および基板回転保持装置ならびにその設計方法 |
JP2001525997A (ja) * | 1997-05-20 | 2001-12-11 | 東京エレクトロン株式会社 | 処理装置 |
JP2003234297A (ja) * | 2002-02-08 | 2003-08-22 | Dowa Mining Co Ltd | 気相薄膜成長装置および気相薄膜成長方法 |
JP2004055672A (ja) * | 2002-07-17 | 2004-02-19 | Nikko Materials Co Ltd | 化学気相成長装置および化学気相成長方法 |
JP2005086132A (ja) * | 2003-09-11 | 2005-03-31 | Hitachi Kokusai Electric Inc | 熱処理装置、半導体装置の製造方法、基板の製造方法及び基板処理方法 |
JP2008091615A (ja) * | 2006-10-02 | 2008-04-17 | Sharp Corp | 被加工処理基板、その製造方法およびその加工処理方法 |
JP2011018662A (ja) * | 2009-07-07 | 2011-01-27 | Panasonic Corp | 気相成長装置 |
JP2012084691A (ja) * | 2010-10-12 | 2012-04-26 | Toyota Motor Corp | 成膜装置と成膜装置用の支持台 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160240398A1 (en) * | 2015-02-12 | 2016-08-18 | Hermes-Epitek Corporation | Wafer Holder |
JP2016149533A (ja) * | 2015-02-12 | 2016-08-18 | 漢民科技股▲分▼有限公司 | ウェハーホルダー |
CN106033738A (zh) * | 2015-02-12 | 2016-10-19 | 汉民科技股份有限公司 | 晶圆保持器 |
CN109797379A (zh) * | 2017-11-16 | 2019-05-24 | 三星电子株式会社 | 包括上喷头和下喷头的沉积设备 |
US11345998B2 (en) | 2017-11-16 | 2022-05-31 | Samsung Electronics Co., Ltd. | Deposition apparatus including upper shower head and lower shower head |
CN111183248A (zh) * | 2019-05-20 | 2020-05-19 | 厦门三安光电有限公司 | 一种用于基板上生长薄膜的承载盘、生长装置和生长方法 |
WO2020232602A1 (zh) * | 2019-05-20 | 2020-11-26 | 厦门三安光电有限公司 | 一种用于基板上生长薄膜的承载盘、生长装置和生长方法 |
CN114686858A (zh) * | 2020-12-30 | 2022-07-01 | 中微半导体设备(上海)股份有限公司 | 一种薄膜生长系统以及基片托盘和载环组件 |
CN114686858B (zh) * | 2020-12-30 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | 一种薄膜生长系统以及基片托盘和载环组件 |
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