CN106033738A - 晶圆保持器 - Google Patents
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- H—ELECTRICITY
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
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Abstract
本发明揭露一种晶圆保持器,其包含保持器主体、支撑件及限制件。保持器主体具有圆形通孔。支撑件包含支撑主体及多数个支撑脚。支撑主体固定于圆形通孔上,而支撑脚间隔环设于支撑主体的内侧壁,用以支撑晶圆。限制件固定于支撑主体上,且位于相邻两支撑脚之间,其中限制件设置对应朝向该晶圆的一平边,用以限制晶圆产生转动。借由上述技术方案,本发明一种晶圆保持器不但能够限制晶圆在制造过程中产生转动或位移,而且使晶圆的表面可有效均匀受热,从而大幅提升工艺良率。
Description
技术领域
本发明是有关一种晶圆保持器,特别是关于一种用于限制晶圆转动的晶圆保持器。
背景技术
请参照图1A及图1B,图1A显示传统晶圆保持器100的剖面图,图1B显示传统工艺的晶圆140的示意图。晶圆保持器100包含保持器主体110及多数个支撑件120,其中支撑件120间隔环设于保持器主体110内侧。而在制造过程中,晶圆140则是以面朝下(face-down)的方式设置在支撑脚120上。因此,如图1B所示,晶圆140设置以对应于支撑脚120的表面处,即对应产生压痕(mark)142A。
然而,由于晶圆140在制造过程中往往须保持在高温状态,因此一般工艺是从晶圆保持器100的底部开口130向晶圆140予以加热,并且施加反应气体在晶圆140表面以进行磊晶成长。如此一来,使得晶圆140因受热形变及受气体冲击而产生滑动或转动现象,导致晶圆140的表面对应增加产生压痕142B,从而让晶圆140实际可使用的表面区域范围受到限缩,而无法提升以获致其最佳使用率。
鉴于上述,因此亟需提出一种具有新颖机构的晶圆保持器,用以改善传统晶圆保持器的缺点。
发明内容
鉴于上述,本发明的目的在于提出一种晶圆保持器,以改善晶圆在制造过程中产生转动或位移的现象,使降低晶圆表面的压痕面积,进而提高其工艺良率及使用率。
本发明的目的及解决其技术问题是采用以下技术方案来实现。依据本发明提出的一种晶圆保持器,其包含保持器主体、支撑件及限制件。保持器主体具有圆形通孔。支撑件包含支撑主体及多数个支撑脚。支撑主体固定于圆形通孔上,而支撑脚间隔环设于支撑主体的内侧壁,用以支撑晶圆。限制件固定于支撑主体上,且位于相邻两支撑脚之间,其中限制件设置对应朝向该晶圆的一平边,用以限制晶圆产生转动。
本发明的目的及解决其技术问题还可采用以下技术措施进一步实现。
前述的晶圆保持器,其中,每一个支撑脚具有第一支撑面,用以支撑该晶圆。
前述的晶圆保持器,其中该限制件包含限制主体,且该限制主体具有限制面,对应朝向该晶圆的该平边,用以限制该晶圆产生转动。
前述的晶圆保持器,其中该限制面与该晶圆的该平边的间距介于0.05毫米至1毫米之间。
前述的晶圆保持器,其中该限制件更包含支撑凸块,凸设于该限制面的下端,其中该支撑块具有顶面,用以支撑该晶圆。
前述的晶圆保持器,其中更包含均热板,设置于所述支撑主体的第二支撑面上,其中该第二支撑面位于该第一支撑面上方。
前述的晶圆保持器,其中该限制件包含多数个限制凸块,间隔设置于该支撑主体的内侧壁上,其中每一限制凸块具有限制面,对应朝向该晶圆的该平边。
前述的晶圆保持器,其中每一个限制凸块的该限制面的宽度相同。
前述的晶圆保持器,其中每两相邻限制凸块的间距小于或等于该晶圆的该平边的长度。
前述的晶圆保持器,其中每一个限制凸块的该限制面与该晶圆的该平边的间距介于0.05毫米至1毫米之间。
本发明与现有技术相比具有明显的优点和有益效果。借由上述技术方案,本发明一种晶圆保持器不但能够限制晶圆在制造过程中产生转动或位移,而且使晶圆的表面可有效均匀受热,从而大幅提升工艺良率。
上述说明仅是本发明技术方案的概述,为了能够更清楚了解本发明的技术手段,而可依照说明书的内容予以实施,并且为了让本发明的上述和其他目的、特征和优点能够更明显易懂,以下特举较佳实施例,并配合附图,详细说明如下。
附图说明
图1A显示传统晶圆保持器的剖面图。
图1B显示传统晶圆的示意图。
图2A显示本发明一实施例的一种晶圆保持器的局部立体示意图。
图2B显示图2A的晶圆保持器的俯视图。
图2C显示将晶圆配置于图2A的晶圆保持器的示意图。
图2D显示将均热板及晶圆设置于图2A的晶圆保持器的剖面示意图。
图3A显示本发明另一实施例的一种晶圆保持器的局部立体示意图。
图3B显示将晶圆配置于图3A的晶圆保持器的示意图。
【主要元件符号说明】
100:晶圆保持器
110:保持器主体
120:支撑件
130:底部开口
140:晶圆
142A:压痕
142B:压痕
200:晶圆保持器
210:保持器主体
212:圆形通孔
220:支撑件
222:支撑主体
224:支撑脚
226:第一支撑面
228:第二支撑面
230:限制件
231:限制主体
232:限制面
233:支撑凸块
234:顶面
240:晶圆
242:平边
250:均热板
300:晶圆保持器
310:保持器主体
312:圆形通孔
320:支撑件
322:支撑主体
324:支撑脚
326:第一支撑面
328:第二支撑面
330:限制件
331:限制凸块
332:限制面
340:晶圆
342:平边
具体实施方式
为了使本发明的叙述更加详尽与完备,可参照所附的图式及以下所述各种实施例,图式中相同的号码代表相同或相似的元件。另一方面,众所周知的元件与步骤并未描述于实施例中,以避免造成本发明不必要的限制。
请同时参照图2A至图2C,图2A显示本发明一实施例的一种晶圆保持器200的局部立体示意图,图2B显示晶圆保持器200的局部俯视图,图2C则显示将晶圆240设置于晶圆保持器200的示意图。如图所示,晶圆保持器200包含保持器主体210、支撑件220及限制件230。保持器主体210具有圆形通孔212。支撑件220包含支撑主体222及多数个支撑脚224。支撑主体222固定于圆形通孔212上,支撑脚224则间隔环设于支撑主体222的内侧壁,用以支撑晶圆240。限制件230则固定于支撑主体222上,且位于相邻两支撑脚224之间,其中限制件230设置对应朝向晶圆240的一平边242,用以限制晶圆240产生转动。此外,在一实施例中,保持器主体210、支撑件220及限制件230可根据实际设计及需求,而采一体成形的工艺。
更进一步地说,每一支撑脚224具有第一支撑面226用以支撑晶圆240。然而,支撑主体222及支撑脚224亦可视实际设计及需求,予以采一体成形的工艺。此外,限制件230包含限制主体231,其中限制主体231具有限制面232,对应朝向晶圆240的平边242,用以限制晶圆240产生转动。
在此实施例中,限制件230可更包含支撑凸块233。支撑凸块233凸设于限制主体231的限制面232的下端。其中,支撑凸块233具有顶面234,用以支撑晶圆240。更具体地说,支撑凸块233的顶面234的水平高度是与每一支撑脚224的第一支撑面226的水平高度大致一致。如此一来,当晶圆240配置于晶圆保持器200时,晶圆240可同时设置于支撑脚224的第一支撑面226及支撑凸块233的顶面234上。
接着,如图2C所示,由于限制主体231是凸设于支撑件230的支撑主体222上,因此当晶圆240因受热形变而向外扩张或受到反应气体冲击发生位移时,晶圆240的平边242将先抵触至限制主体231的限制面232,而致使晶圆240无法产生转动或位移。另外,在一实施例中,限制面232与晶圆240的平边242的间距是介于0.05毫米(mm)至1毫米(mm)之间。再者,在图2C所示的实施例中,限制面232的长度(L1)是大于晶圆240的平边242的长度(Lw)。然而,本发明不以此为限,限制面232的长度(L1)亦可根据依据实际制成需求,而予以调整为小于或等于晶圆240的平边242的长度(Lw)。
请继续参照图2D,其显示均热板250及晶圆240同时设置于图2A的晶圆保持器200的示意图。如图所示,晶圆保持器200可更包含均热板250,且均热板250可设置于支撑件220的支撑主体222的第二支撑面228上,其中第二支撑面228是位于第一支撑面上方。如此一来,当进行加热工艺步骤而从晶圆240下方处予以加热时,由于均热板250借由支撑件220而配置于晶圆240上方处,所以即可让位于均热板250及晶圆240之间的腔体气体进行热对流,致使晶圆240的表面可有效均匀受热,从而大幅提升工艺良率。
接着,请同时参照图3A及图3B,图3A显示本发明另一实施例的一种晶圆保持器300的局部立体示意图,而图3B则显示将晶圆340设置于晶圆保持器300的示意图。如图所示,限制件330可包含多数个限制凸块331。限制凸块331是间隔设置于支撑主体322的内侧壁上,其中每一限制凸块231具有限制侧面332对应朝向晶圆340的平边342。如此一来,由于所述限制凸块331是凸设支撑主体222的内侧壁上,且可具有大致相同的宽度,所以当晶圆340因受热形变而向外扩张或受到反应气体冲击发生位移时,晶圆340的平边342将先抵触到限制凸块331的限制面332,而致使晶圆340无法产生转动或位移。其次,在一实施例中,限制凸块331与晶圆340的平边342的间距是可介于0.05毫米(mm)至1毫米(mm)之间。
再者,图3B所示,每两相邻限制凸块331的间距(L2)是小于或等于晶圆340的平边342的长度(Lw)。因此,当晶圆340因受热形变向外扩张时,多个限制凸块331的侧面332将同时对应抵触晶圆340的平边342而予以固定,以有效限制晶圆340进一步产生转动或位移,从而有效减少晶圆340表面的压痕面积范围。
以上所述,仅是本发明的较佳实施例而已,并非对本发明做任何形式上的限制,虽然本发明已以较佳实施例揭露如上,然而并非用以限定本发明,任何熟悉本专业的技术人员,在不脱离本发明技术方案范围内,当可利用上述揭示的技术内容做出些许更动或修饰为等同变化的等效实施例,但凡是未脱离本发明技术方案的内容,依据本发明的技术实质对以上实施例所做的任何简单修改、等同变化与修饰,均仍属于本发明技术方案的范围内。
Claims (10)
1.一种晶圆保持器,其特征在于包含:
保持器主体,具有圆形通孔;
支撑件,其中该支撑件包含:
支撑主体,固定于该圆形通孔上;及
多数个支撑脚,间隔环设于该支撑主体的内侧壁,用以支撑晶圆;及
限制件,固定于该支撑主体上,且位于相邻两支撑脚之间,其中该限制件设置对应朝向该晶圆的一平边,用以限制该晶圆产生转动。
2.根据权利要求1所述的晶圆保持器,其特征在于其中,每一个支撑脚具有第一支撑面,用以支撑该晶圆。
3.根据权利要求1所述的晶圆保持器,其特征在于其中该限制件包含限制主体,且该限制主体具有限制面,对应朝向该晶圆的该平边,用以限制该晶圆产生转动。
4.根据权利要求3所述的晶圆保持器,其特征在于其中该限制面与该晶圆的该平边的间距介于0.05毫米至1毫米之间。
5.根据权利要求1所述的晶圆保持器,其特征在于其中该限制件更包含:
支撑凸块,凸设于该限制面的下端,其中该支撑块具有顶面,用以支撑该晶圆。
6.根据权利要求1所述的晶圆保持器,其特征在于其中更包含均热板,设置于所述支撑主体的第二支撑面上,其中该第二支撑面位于该第一支撑面上方。
7.根据权利要求1所述的晶圆保持器,其特征在于其中该限制件包含:
多数个限制凸块,间隔设置于该支撑主体的内侧壁上,其中每一限制凸块具有限制面,对应朝向该晶圆的该平边。
8.根据权利要求7所述的晶圆保持器,其特征在于其中每一个限制凸块的该限制面的宽度相同。
9.根据权利要求7所述的晶圆保持器,其特征在于其中每两相邻限制凸块的间距小于或等于该晶圆的该平边的长度。
10.根据权利要求7所述的晶圆保持器,其特征在于其中每一个限制凸块的该限制面与该晶圆的该平边的间距介于0.05毫米至1毫米之间。
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CN111183248A (zh) * | 2019-05-20 | 2020-05-19 | 厦门三安光电有限公司 | 一种用于基板上生长薄膜的承载盘、生长装置和生长方法 |
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CN1487365A (zh) * | 2002-07-11 | 2004-04-07 | Asml荷兰有限公司 | 基底固定件以及器件制造方法 |
CN101770972A (zh) * | 2008-12-29 | 2010-07-07 | 中芯国际集成电路制造(上海)有限公司 | 工艺盘 |
JP2011018662A (ja) * | 2009-07-07 | 2011-01-27 | Panasonic Corp | 気相成長装置 |
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