JP2014192245A5 - - Google Patents
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- Publication number
- JP2014192245A5 JP2014192245A5 JP2013064713A JP2013064713A JP2014192245A5 JP 2014192245 A5 JP2014192245 A5 JP 2014192245A5 JP 2013064713 A JP2013064713 A JP 2013064713A JP 2013064713 A JP2013064713 A JP 2013064713A JP 2014192245 A5 JP2014192245 A5 JP 2014192245A5
- Authority
- JP
- Japan
- Prior art keywords
- processing
- layer
- plasma
- gas
- tungsten layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000007789 gas Substances 0.000 claims 32
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 27
- 229910052721 tungsten Inorganic materials 0.000 claims 27
- 239000010937 tungsten Substances 0.000 claims 27
- 238000003672 processing method Methods 0.000 claims 14
- 238000005530 etching Methods 0.000 claims 9
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 6
- 229910052731 fluorine Inorganic materials 0.000 claims 6
- 239000011737 fluorine Substances 0.000 claims 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 5
- 229920005591 polysilicon Polymers 0.000 claims 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 4
- 230000004888 barrier function Effects 0.000 claims 4
- 229910052751 metal Inorganic materials 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- 239000001301 oxygen Substances 0.000 claims 4
- 229910052760 oxygen Inorganic materials 0.000 claims 4
- 238000000059 patterning Methods 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 230000001590 oxidative effect Effects 0.000 claims 1
- 238000009832 plasma treatment Methods 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013064713A JP6077354B2 (ja) | 2013-03-26 | 2013-03-26 | プラズマ処理方法及びプラズマ処理装置 |
| KR1020140032018A KR102170584B1 (ko) | 2013-03-26 | 2014-03-19 | 플라즈마 처리 방법 및 플라즈마 처리 장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013064713A JP6077354B2 (ja) | 2013-03-26 | 2013-03-26 | プラズマ処理方法及びプラズマ処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014192245A JP2014192245A (ja) | 2014-10-06 |
| JP2014192245A5 true JP2014192245A5 (enExample) | 2016-01-28 |
| JP6077354B2 JP6077354B2 (ja) | 2017-02-08 |
Family
ID=51838263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013064713A Active JP6077354B2 (ja) | 2013-03-26 | 2013-03-26 | プラズマ処理方法及びプラズマ処理装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP6077354B2 (enExample) |
| KR (1) | KR102170584B1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10043684B1 (en) * | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
| CN113284797B (zh) * | 2020-02-20 | 2022-10-18 | 长鑫存储技术有限公司 | 半导体存储器的制作方法 |
| US11631589B2 (en) * | 2021-05-04 | 2023-04-18 | Applied Materials, Inc. | Metal etch in high aspect-ratio features |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09246245A (ja) * | 1996-03-13 | 1997-09-19 | Toshiba Corp | 半導体装置の製造方法 |
| JPH11340213A (ja) * | 1998-03-12 | 1999-12-10 | Hitachi Ltd | 試料の表面加工方法 |
| JP3986808B2 (ja) | 2001-04-23 | 2007-10-03 | 東京エレクトロン株式会社 | ドライエッチング方法 |
| JP2005109035A (ja) * | 2003-09-29 | 2005-04-21 | Toshiba Corp | 半導体装置の製造方法 |
| JP3872069B2 (ja) * | 2004-04-07 | 2007-01-24 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
| JP4704087B2 (ja) * | 2005-03-31 | 2011-06-15 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| US7368394B2 (en) * | 2006-02-27 | 2008-05-06 | Applied Materials, Inc. | Etch methods to form anisotropic features for high aspect ratio applications |
| JP2008053496A (ja) * | 2006-08-25 | 2008-03-06 | Sumitomo Precision Prod Co Ltd | エッチング装置 |
| JP2009193989A (ja) * | 2008-02-12 | 2009-08-27 | Tokyo Electron Ltd | プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体 |
-
2013
- 2013-03-26 JP JP2013064713A patent/JP6077354B2/ja active Active
-
2014
- 2014-03-19 KR KR1020140032018A patent/KR102170584B1/ko active Active
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