JP6077354B2 - プラズマ処理方法及びプラズマ処理装置 - Google Patents

プラズマ処理方法及びプラズマ処理装置 Download PDF

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Publication number
JP6077354B2
JP6077354B2 JP2013064713A JP2013064713A JP6077354B2 JP 6077354 B2 JP6077354 B2 JP 6077354B2 JP 2013064713 A JP2013064713 A JP 2013064713A JP 2013064713 A JP2013064713 A JP 2013064713A JP 6077354 B2 JP6077354 B2 JP 6077354B2
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Japan
Prior art keywords
processing
gas
layer
tungsten layer
plasma
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JP2013064713A
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English (en)
Japanese (ja)
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JP2014192245A5 (enExample
JP2014192245A (ja
Inventor
真之 沢田石
真之 沢田石
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2013064713A priority Critical patent/JP6077354B2/ja
Priority to KR1020140032018A priority patent/KR102170584B1/ko
Publication of JP2014192245A publication Critical patent/JP2014192245A/ja
Publication of JP2014192245A5 publication Critical patent/JP2014192245A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
JP2013064713A 2013-03-26 2013-03-26 プラズマ処理方法及びプラズマ処理装置 Active JP6077354B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013064713A JP6077354B2 (ja) 2013-03-26 2013-03-26 プラズマ処理方法及びプラズマ処理装置
KR1020140032018A KR102170584B1 (ko) 2013-03-26 2014-03-19 플라즈마 처리 방법 및 플라즈마 처리 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013064713A JP6077354B2 (ja) 2013-03-26 2013-03-26 プラズマ処理方法及びプラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2014192245A JP2014192245A (ja) 2014-10-06
JP2014192245A5 JP2014192245A5 (enExample) 2016-01-28
JP6077354B2 true JP6077354B2 (ja) 2017-02-08

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ID=51838263

Family Applications (1)

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JP2013064713A Active JP6077354B2 (ja) 2013-03-26 2013-03-26 プラズマ処理方法及びプラズマ処理装置

Country Status (2)

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JP (1) JP6077354B2 (enExample)
KR (1) KR102170584B1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10043684B1 (en) * 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
CN113284797B (zh) * 2020-02-20 2022-10-18 长鑫存储技术有限公司 半导体存储器的制作方法
US11631589B2 (en) * 2021-05-04 2023-04-18 Applied Materials, Inc. Metal etch in high aspect-ratio features

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09246245A (ja) * 1996-03-13 1997-09-19 Toshiba Corp 半導体装置の製造方法
JPH11340213A (ja) * 1998-03-12 1999-12-10 Hitachi Ltd 試料の表面加工方法
JP3986808B2 (ja) 2001-04-23 2007-10-03 東京エレクトロン株式会社 ドライエッチング方法
JP2005109035A (ja) * 2003-09-29 2005-04-21 Toshiba Corp 半導体装置の製造方法
JP3872069B2 (ja) * 2004-04-07 2007-01-24 エルピーダメモリ株式会社 半導体装置の製造方法
JP4704087B2 (ja) * 2005-03-31 2011-06-15 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US7368394B2 (en) * 2006-02-27 2008-05-06 Applied Materials, Inc. Etch methods to form anisotropic features for high aspect ratio applications
JP2008053496A (ja) * 2006-08-25 2008-03-06 Sumitomo Precision Prod Co Ltd エッチング装置
JP2009193989A (ja) * 2008-02-12 2009-08-27 Tokyo Electron Ltd プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体

Also Published As

Publication number Publication date
JP2014192245A (ja) 2014-10-06
KR20140117282A (ko) 2014-10-07
KR102170584B1 (ko) 2020-10-27

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