JP2014181178A - 低炭素ｉｉｉ族窒化物結晶 - Google Patents

低炭素ｉｉｉ族窒化物結晶 Download PDF

Info

Publication number
JP2014181178A
JP2014181178A JP2014052911A JP2014052911A JP2014181178A JP 2014181178 A JP2014181178 A JP 2014181178A JP 2014052911 A JP2014052911 A JP 2014052911A JP 2014052911 A JP2014052911 A JP 2014052911A JP 2014181178 A JP2014181178 A JP 2014181178A
Authority
JP
Japan
Prior art keywords
iii
nitride crystal
nitride
aln
species
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2014052911A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014181178A5 (enExample
Inventor
Schmitt Jason
シュミット ジェイソン
Peng Lu
ル ペン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NITRIDE SOLUTIONS Inc
Original Assignee
NITRIDE SOLUTIONS Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NITRIDE SOLUTIONS Inc filed Critical NITRIDE SOLUTIONS Inc
Publication of JP2014181178A publication Critical patent/JP2014181178A/ja
Publication of JP2014181178A5 publication Critical patent/JP2014181178A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1246—III-V nitrides, e.g. GaN
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP2014052911A 2013-03-15 2014-03-17 低炭素ｉｉｉ族窒化物結晶 Pending JP2014181178A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/844,182 2013-03-15
US13/844,182 US20140264388A1 (en) 2013-03-15 2013-03-15 Low carbon group-iii nitride crystals

Publications (2)

Publication Number Publication Date
JP2014181178A true JP2014181178A (ja) 2014-09-29
JP2014181178A5 JP2014181178A5 (enExample) 2017-04-20

Family

ID=50343610

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014052911A Pending JP2014181178A (ja) 2013-03-15 2014-03-17 低炭素ｉｉｉ族窒化物結晶

Country Status (6)

Country Link
US (1) US20140264388A1 (enExample)
EP (1) EP2784191A1 (enExample)
JP (1) JP2014181178A (enExample)
KR (1) KR20140113583A (enExample)
CN (1) CN104047054A (enExample)
TW (1) TW201443302A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021034675A (ja) * 2019-08-29 2021-03-01 漢民科技股▲分▼有限公司 気相成膜装置
JPWO2024150428A1 (enExample) * 2023-01-13 2024-07-18

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106191998A (zh) * 2016-07-25 2016-12-07 中国科学院上海硅酸盐研究所 一种基于气相生长原理制备多孔氮化铝的方法
US20220025519A1 (en) * 2018-10-26 2022-01-27 Lpe S.P.A. Deposition reactor with inductors and electromagnetic shields
DE102018129492B4 (de) 2018-11-22 2022-04-28 Ebner Industrieofenbau Gmbh Vorrichtung und Verfahren zum Züchten von Kristallen
CN112820634B (zh) * 2021-01-14 2024-01-16 镓特半导体科技（上海）有限公司 半导体结构、自支撑氮化镓层及其制备方法
US12142468B2 (en) * 2021-08-30 2024-11-12 Applied Materials, Inc. Stress treatments for cover wafers

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001345268A (ja) * 2000-05-31 2001-12-14 Matsushita Electric Ind Co Ltd 半導体製造装置及び半導体の製造方法
US20120076968A1 (en) * 2001-07-06 2012-03-29 Freiberger Compound Materials Gmbh Method and apparatus for fabricating crack-free group iii nitride semiconductor materials
WO2013094058A1 (ja) * 2011-12-22 2013-06-27 国立大学法人東京農工大学 窒化アルミニウム単結晶基板、およびこれらの製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006044982A (ja) * 2004-08-04 2006-02-16 Sumitomo Electric Ind Ltd 窒化物半導体単結晶基板とその合成方法
DE102004050806A1 (de) * 2004-10-16 2006-11-16 Azzurro Semiconductors Ag Verfahren zur Herstellung von (AI,Ga)N Einkristallen
US9034103B2 (en) * 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
WO2010001804A1 (ja) * 2008-07-01 2010-01-07 住友電気工業株式会社 ＡｌxＧａ(1-x)Ｎ単結晶の製造方法、ＡｌxＧａ(1-x)Ｎ単結晶および光学部品
JP5418210B2 (ja) * 2009-01-16 2014-02-19 住友電気工業株式会社 窒化物半導体結晶の製造方法、ＡｌＮ結晶および窒化物半導体結晶の製造装置
JP5418236B2 (ja) * 2009-01-23 2014-02-19 住友電気工業株式会社 窒化物半導体結晶の製造装置、窒化物半導体結晶の製造方法および窒化アルミニウム結晶
US8791450B2 (en) * 2011-09-22 2014-07-29 Sensor Electronic Technology, Inc. Deep ultraviolet light emitting diode
JP6042545B2 (ja) * 2012-08-23 2016-12-14 国立大学法人東京農工大学 高透明性窒化アルミニウム単結晶層、及びこれからなる素子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001345268A (ja) * 2000-05-31 2001-12-14 Matsushita Electric Ind Co Ltd 半導体製造装置及び半導体の製造方法
US20120076968A1 (en) * 2001-07-06 2012-03-29 Freiberger Compound Materials Gmbh Method and apparatus for fabricating crack-free group iii nitride semiconductor materials
WO2013094058A1 (ja) * 2011-12-22 2013-06-27 国立大学法人東京農工大学 窒化アルミニウム単結晶基板、およびこれらの製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KUMAGAI, YOSHINAO ET AL.: "Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epit", APPLIED PHYSICS EXPRESS, vol. 5, JPN6018004664, 2012, pages 055504, ISSN: 0003928036 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021034675A (ja) * 2019-08-29 2021-03-01 漢民科技股▲分▼有限公司 気相成膜装置
JPWO2024150428A1 (enExample) * 2023-01-13 2024-07-18
WO2024150428A1 (ja) * 2023-01-13 2024-07-18 日本碍子株式会社 ＡｌＮ単結晶基板およびデバイス

Also Published As

Publication number Publication date
EP2784191A1 (en) 2014-10-01
KR20140113583A (ko) 2014-09-24
CN104047054A (zh) 2014-09-17
US20140264388A1 (en) 2014-09-18
TW201443302A (zh) 2014-11-16

Similar Documents

Publication Publication Date Title
US7524376B2 (en) Method and apparatus for aluminum nitride monocrystal boule growth
JP5068423B2 (ja) 炭化珪素単結晶インゴット、炭化珪素単結晶ウェハ及びその製造方法
TWI770769B (zh) 使用得自聚合物之高純度碳化矽之氣相沉積設備與技術
JP5251893B2 (ja) 導電性ｉｉｉ族窒化物結晶の製造方法及び導電性ｉｉｉ族窒化物基板の製造方法
JP2014181178A (ja) 低炭素ｉｉｉ族窒化物結晶
US20120118226A1 (en) Method of Synthesizing Nitride Semiconductor Single-Crystal Substrate
WO2007133512A2 (en) Methods and materials for growing iii-nitride semiconductor compounds containing aluminum
CN101952490A (zh) 层叠体及其制造方法
KR20130109946A (ko) ＧａＮ 결정 자립 기판 및 그 제조 방법
Pons et al. High temperature chemical vapor deposition of aluminum nitride, growth and evaluation
CN112567079A (zh) 深紫外透明的氮化铝晶体及其形成方法
EP1852527A1 (en) Silicon carbide single crystal, silicon carbide single crystal wafer, and process for producing the same
JP4733882B2 (ja) 炭化珪素単結晶及びその製造方法並びに炭化珪素単結晶育成用炭化珪素結晶原料
JP4707755B2 (ja) 窒化アルミニウム単結晶層を有する積層体の製造方法、該製法で製造される積層体、該積層体を用いた窒化アルミニウム単結晶基板の製造方法、および、窒化アルミニウム単結晶基板
JP2005239496A (ja) 炭化珪素単結晶育成用炭化珪素原料と炭化珪素単結晶及びその製造方法
KR102177385B1 (ko) GaN 웨이퍼 제조용 HVPE 장치 및 그에 의한 GaN 웨이퍼 제조 방법
JP5640822B2 (ja) 窒化物半導体製造装置、窒化物半導体の製造方法および窒化物半導体結晶
JP2011246749A (ja) アルミニウム系ｉｉｉ族窒化物製造装置、およびアルミニウム系ｉｉｉ族窒化物の製造方法
Siche et al. Growth of bulk gan from gas phase
JP2008230868A (ja) 窒化ガリウム結晶の成長方法および窒化ガリウム結晶基板
JP6499917B2 (ja) Ｉｉｉ族窒化物単結晶の製造方法
JP7712380B2 (ja) ＡｌＮ単結晶
JP4595592B2 (ja) 単結晶成長方法
JP2016113338A (ja) 熱分解窒化ホウ素部材及びその製造方法
US20240383757A1 (en) Methods for the growth of a graphene layer structure on a substrate and an opto-electronic device

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170316

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170316

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180213

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20180514

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20181204