CN104047054A - 低碳的iii族元素氮化物晶体 - Google Patents

低碳的iii族元素氮化物晶体 Download PDF

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Publication number
CN104047054A
CN104047054A CN201410094204.6A CN201410094204A CN104047054A CN 104047054 A CN104047054 A CN 104047054A CN 201410094204 A CN201410094204 A CN 201410094204A CN 104047054 A CN104047054 A CN 104047054A
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CN
China
Prior art keywords
group iii
crystal
iii
nitride
carbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410094204.6A
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English (en)
Chinese (zh)
Inventor
J.施密特
P.卢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitride Is Processed Ltd Co
NITRIDE SOLUTIONS Inc
Original Assignee
Nitride Is Processed Ltd Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitride Is Processed Ltd Co filed Critical Nitride Is Processed Ltd Co
Publication of CN104047054A publication Critical patent/CN104047054A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1246—III-V nitrides, e.g. GaN
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
CN201410094204.6A 2013-03-15 2014-03-14 低碳的iii族元素氮化物晶体 Pending CN104047054A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/844,182 2013-03-15
US13/844,182 US20140264388A1 (en) 2013-03-15 2013-03-15 Low carbon group-iii nitride crystals

Publications (1)

Publication Number Publication Date
CN104047054A true CN104047054A (zh) 2014-09-17

Family

ID=50343610

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410094204.6A Pending CN104047054A (zh) 2013-03-15 2014-03-14 低碳的iii族元素氮化物晶体

Country Status (6)

Country Link
US (1) US20140264388A1 (enExample)
EP (1) EP2784191A1 (enExample)
JP (1) JP2014181178A (enExample)
KR (1) KR20140113583A (enExample)
CN (1) CN104047054A (enExample)
TW (1) TW201443302A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106191998A (zh) * 2016-07-25 2016-12-07 中国科学院上海硅酸盐研究所 一种基于气相生长原理制备多孔氮化铝的方法
CN112820634A (zh) * 2021-01-14 2021-05-18 镓特半导体科技（上海）有限公司 半导体结构、自支撑氮化镓层及其制备方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020084563A1 (en) * 2018-10-26 2020-04-30 Lpe S.P.A. Deposition reactor with inductors and electromagnetic shields
DE102018129492B4 (de) 2018-11-22 2022-04-28 Ebner Industrieofenbau Gmbh Vorrichtung und Verfahren zum Züchten von Kristallen
JP2021034675A (ja) * 2019-08-29 2021-03-01 漢民科技股▲分▼有限公司 気相成膜装置
US12142468B2 (en) * 2021-08-30 2024-11-12 Applied Materials, Inc. Stress treatments for cover wafers
JPWO2024150428A1 (enExample) * 2023-01-13 2024-07-18

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001345268A (ja) * 2000-05-31 2001-12-14 Matsushita Electric Ind Co Ltd 半導体製造装置及び半導体の製造方法
US7501023B2 (en) * 2001-07-06 2009-03-10 Technologies And Devices, International, Inc. Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
JP2006044982A (ja) * 2004-08-04 2006-02-16 Sumitomo Electric Ind Ltd 窒化物半導体単結晶基板とその合成方法
DE102004050806A1 (de) * 2004-10-16 2006-11-16 Azzurro Semiconductors Ag Verfahren zur Herstellung von (AI,Ga)N Einkristallen
US9034103B2 (en) * 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
JPWO2010001804A1 (ja) * 2008-07-01 2011-12-22 住友電気工業株式会社 ＡｌｘＧａ（１−ｘ）Ｎ単結晶の製造方法、ＡｌｘＧａ（１−ｘ）Ｎ単結晶および光学部品
JP5418210B2 (ja) * 2009-01-16 2014-02-19 住友電気工業株式会社 窒化物半導体結晶の製造方法、ＡｌＮ結晶および窒化物半導体結晶の製造装置
JP5418236B2 (ja) * 2009-01-23 2014-02-19 住友電気工業株式会社 窒化物半導体結晶の製造装置、窒化物半導体結晶の製造方法および窒化アルミニウム結晶
US8791450B2 (en) * 2011-09-22 2014-07-29 Sensor Electronic Technology, Inc. Deep ultraviolet light emitting diode
KR101821301B1 (ko) * 2011-12-22 2018-01-23 가부시키가이샤 도쿠야마 질화 알루미늄 단결정 기판 및 이들의 제조 방법
WO2014031119A1 (en) * 2012-08-23 2014-02-27 National University Corporation Tokyo University Of Agriculture And Technology Highly transparent aluminum nitride single crystalline layers and devices made therefrom

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106191998A (zh) * 2016-07-25 2016-12-07 中国科学院上海硅酸盐研究所 一种基于气相生长原理制备多孔氮化铝的方法
CN112820634A (zh) * 2021-01-14 2021-05-18 镓特半导体科技（上海）有限公司 半导体结构、自支撑氮化镓层及其制备方法
CN112820634B (zh) * 2021-01-14 2024-01-16 镓特半导体科技（上海）有限公司 半导体结构、自支撑氮化镓层及其制备方法

Also Published As

Publication number Publication date
EP2784191A1 (en) 2014-10-01
US20140264388A1 (en) 2014-09-18
JP2014181178A (ja) 2014-09-29
KR20140113583A (ko) 2014-09-24
TW201443302A (zh) 2014-11-16

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Application publication date: 20140917