JP2014175518A5 - - Google Patents

Download PDF

Info

Publication number
JP2014175518A5
JP2014175518A5 JP2013047790A JP2013047790A JP2014175518A5 JP 2014175518 A5 JP2014175518 A5 JP 2014175518A5 JP 2013047790 A JP2013047790 A JP 2013047790A JP 2013047790 A JP2013047790 A JP 2013047790A JP 2014175518 A5 JP2014175518 A5 JP 2014175518A5
Authority
JP
Japan
Prior art keywords
drift layer
region
semiconductor device
silicon carbide
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013047790A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014175518A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2013047790A priority Critical patent/JP2014175518A/ja
Priority claimed from JP2013047790A external-priority patent/JP2014175518A/ja
Priority to PCT/JP2014/051468 priority patent/WO2014141754A1/ja
Priority to DE112014001221.1T priority patent/DE112014001221T5/de
Priority to CN201480008388.8A priority patent/CN105190899A/zh
Priority to US14/176,966 priority patent/US8952393B2/en
Publication of JP2014175518A publication Critical patent/JP2014175518A/ja
Publication of JP2014175518A5 publication Critical patent/JP2014175518A5/ja
Pending legal-status Critical Current

Links

JP2013047790A 2013-03-11 2013-03-11 炭化珪素半導体装置 Pending JP2014175518A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2013047790A JP2014175518A (ja) 2013-03-11 2013-03-11 炭化珪素半導体装置
PCT/JP2014/051468 WO2014141754A1 (ja) 2013-03-11 2014-01-24 炭化珪素半導体装置
DE112014001221.1T DE112014001221T5 (de) 2013-03-11 2014-01-24 Siliziumkarbid-Halbleitervorrichtung
CN201480008388.8A CN105190899A (zh) 2013-03-11 2014-01-24 碳化硅半导体器件
US14/176,966 US8952393B2 (en) 2013-03-11 2014-02-10 Silicon carbide semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013047790A JP2014175518A (ja) 2013-03-11 2013-03-11 炭化珪素半導体装置

Publications (2)

Publication Number Publication Date
JP2014175518A JP2014175518A (ja) 2014-09-22
JP2014175518A5 true JP2014175518A5 (enExample) 2016-01-21

Family

ID=51486739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013047790A Pending JP2014175518A (ja) 2013-03-11 2013-03-11 炭化珪素半導体装置

Country Status (5)

Country Link
US (1) US8952393B2 (enExample)
JP (1) JP2014175518A (enExample)
CN (1) CN105190899A (enExample)
DE (1) DE112014001221T5 (enExample)
WO (1) WO2014141754A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015060859A (ja) * 2013-09-17 2015-03-30 住友電気工業株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
WO2016023100A1 (en) 2014-08-11 2016-02-18 Corel Corporation Methods and systems for generating graphical content through physical system modelling
JP6658257B2 (ja) * 2016-04-22 2020-03-04 住友電気工業株式会社 炭化珪素半導体装置
US10861931B2 (en) 2016-12-08 2020-12-08 Cree, Inc. Power semiconductor devices having gate trenches and buried edge terminations and related methods
WO2019008884A1 (ja) * 2017-07-04 2019-01-10 住友電気工業株式会社 炭化珪素半導体装置
CN107731894B (zh) * 2017-09-02 2020-02-07 西安交通大学 一种带浮空区的低导通电阻碳化硅igbt器件与制备方法
CN107742646A (zh) * 2017-09-21 2018-02-27 北京世纪金光半导体有限公司 一种具有掩埋悬浮结的碳化硅平面栅mosfet器件元胞结构
JP6397553B1 (ja) * 2017-10-25 2018-09-26 東芝機械株式会社 転写装置
CN108172609A (zh) * 2017-12-22 2018-06-15 北京世纪金光半导体有限公司 具有周边深沟槽保护环和接地环的碳化硅悬浮结mosfet器件
JP6981890B2 (ja) * 2018-01-29 2021-12-17 ルネサスエレクトロニクス株式会社 半導体装置
JP7161043B2 (ja) * 2019-05-22 2022-10-25 ローム株式会社 ＳｉＣ半導体装置
WO2021124800A1 (ja) * 2019-12-20 2021-06-24 住友電気工業株式会社 炭化珪素半導体装置
JP7643833B2 (ja) * 2020-02-13 2025-03-11 株式会社デンソー スイッチング素子
WO2021210600A1 (ja) * 2020-04-17 2021-10-21 三菱電機株式会社 電力用半導体装置、電力用半導体装置の製造方法および電力変換装置
CN116259647A (zh) * 2022-09-06 2023-06-13 北京智慧能源研究院 一种半导体功率器件及其制备方法
CN119545870B (zh) * 2024-11-27 2025-09-12 湖北九峰山实验室 一种半导体器件

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3158973B2 (ja) * 1995-07-20 2001-04-23 富士電機株式会社 炭化けい素縦型ｆｅｔ
US6037632A (en) * 1995-11-06 2000-03-14 Kabushiki Kaisha Toshiba Semiconductor device
JP3392665B2 (ja) 1995-11-06 2003-03-31 株式会社東芝 半導体装置
SE9704149D0 (sv) * 1997-11-13 1997-11-13 Abb Research Ltd A semiconductor device of SiC and a transistor of SiC having an insulated gate
JP2001274395A (ja) * 2000-03-28 2001-10-05 Toshiba Corp 半導体デバイス及びその製造方法
JP4189415B2 (ja) * 2006-06-30 2008-12-03 株式会社東芝 半導体装置
EP2091083A3 (en) * 2008-02-13 2009-10-14 Denso Corporation Silicon carbide semiconductor device including a deep layer
JP4793390B2 (ja) * 2008-02-13 2011-10-12 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP5668576B2 (ja) * 2011-04-01 2015-02-12 住友電気工業株式会社 炭化珪素半導体装置

Similar Documents

Publication Publication Date Title
JP2014175518A5 (enExample)
JP2015005735A5 (enExample)
JP2012169610A5 (ja) 半導体装置
JP2013165132A5 (enExample)
JP2011054949A5 (ja) 半導体装置
JP2012033908A5 (enExample)
JP2012169611A5 (ja) 半導体装置
JP2013102140A5 (ja) 半導体装置
JP2014195049A5 (ja) 半導体装置
EP2755237A3 (en) Trench MOS gate semiconductor device and method of fabricating the same
JP2013102134A5 (ja) 半導体装置
JP2013084944A5 (ja) 半導体装置
JP2017005277A5 (enExample)
JP2012256835A5 (enExample)
JP2015156477A5 (ja) 半導体装置
JP2012033913A5 (enExample)
JP2012049514A5 (enExample)
JP2012235153A5 (enExample)
JP2012015500A5 (enExample)
JP2014143408A5 (ja) 半導体装置
JP2012009845A5 (enExample)
JP2013168644A5 (ja) 半導体装置
JP2010251735A5 (ja) 半導体装置
JP2014063749A5 (enExample)
JP2012256877A5 (ja) 半導体装置の作製方法、及び半導体装置