CN105190899A - 碳化硅半导体器件 - Google Patents

碳化硅半导体器件 Download PDF

Info

Publication number
CN105190899A
CN105190899A CN201480008388.8A CN201480008388A CN105190899A CN 105190899 A CN105190899 A CN 105190899A CN 201480008388 A CN201480008388 A CN 201480008388A CN 105190899 A CN105190899 A CN 105190899A
Authority
CN
China
Prior art keywords
drift layer
region
silicon carbide
semiconductor device
carbide semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201480008388.8A
Other languages
English (en)
Chinese (zh)
Inventor
和田圭司
增田健良
日吉透
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of CN105190899A publication Critical patent/CN105190899A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates

Landscapes

  • Electrodes Of Semiconductors (AREA)
CN201480008388.8A 2013-03-11 2014-01-24 碳化硅半导体器件 Pending CN105190899A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013-047790 2013-03-11
JP2013047790A JP2014175518A (ja) 2013-03-11 2013-03-11 炭化珪素半導体装置
PCT/JP2014/051468 WO2014141754A1 (ja) 2013-03-11 2014-01-24 炭化珪素半導体装置

Publications (1)

Publication Number Publication Date
CN105190899A true CN105190899A (zh) 2015-12-23

Family

ID=51486739

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480008388.8A Pending CN105190899A (zh) 2013-03-11 2014-01-24 碳化硅半导体器件

Country Status (5)

Country Link
US (1) US8952393B2 (enExample)
JP (1) JP2014175518A (enExample)
CN (1) CN105190899A (enExample)
DE (1) DE112014001221T5 (enExample)
WO (1) WO2014141754A1 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107731894A (zh) * 2017-09-02 2018-02-23 西安交通大学 一种带浮空区的低导通电阻碳化硅igbt器件与制备方法
CN107742646A (zh) * 2017-09-21 2018-02-27 北京世纪金光半导体有限公司 一种具有掩埋悬浮结的碳化硅平面栅mosfet器件元胞结构
CN108172609A (zh) * 2017-12-22 2018-06-15 北京世纪金光半导体有限公司 具有周边深沟槽保护环和接地环的碳化硅悬浮结mosfet器件
CN116259647A (zh) * 2022-09-06 2023-06-13 北京智慧能源研究院 一种半导体功率器件及其制备方法
CN119545870A (zh) * 2024-11-27 2025-02-28 湖北九峰山实验室 一种半导体器件
CN121057268A (zh) * 2024-05-23 2025-12-02 无锡华润华晶微电子有限公司 碳化硅金属氧化物半导体场效应管及其制造方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015060859A (ja) * 2013-09-17 2015-03-30 住友電気工業株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
WO2016023100A1 (en) 2014-08-11 2016-02-18 Corel Corporation Methods and systems for generating graphical content through physical system modelling
JP6658257B2 (ja) * 2016-04-22 2020-03-04 住友電気工業株式会社 炭化珪素半導体装置
US10861931B2 (en) 2016-12-08 2020-12-08 Cree, Inc. Power semiconductor devices having gate trenches and buried edge terminations and related methods
US11011631B2 (en) 2017-07-04 2021-05-18 Sumitomo Electric Industries, Ltd. Silicon carbide semiconductor device
JP6397553B1 (ja) * 2017-10-25 2018-09-26 東芝機械株式会社 転写装置
JP6981890B2 (ja) * 2018-01-29 2021-12-17 ルネサスエレクトロニクス株式会社 半導体装置
DE112020000226B4 (de) * 2019-05-22 2026-07-02 Rohm Co., Ltd. SiC-HALBLEITERBAUTEIL
JP7635718B2 (ja) * 2019-12-20 2025-02-26 住友電気工業株式会社 炭化珪素半導体装置
JP7643833B2 (ja) * 2020-02-13 2025-03-11 株式会社デンソー スイッチング素子
DE112021002411T5 (de) * 2020-04-17 2023-02-16 Mitsubishi Electric Corporation Leistungshalbleitergerät, Verfahren zum Herstellen eines Leistungshalbleitergeräts und Leistungswandlergerät

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5963807A (en) * 1995-07-20 1999-10-05 Fuji Electric Co., Ltd. Silicon carbide field effect transistor with increased avalanche withstand capability
US6037632A (en) * 1995-11-06 2000-03-14 Kabushiki Kaisha Toshiba Semiconductor device
JP2001274395A (ja) * 2000-03-28 2001-10-05 Toshiba Corp 半導体デバイス及びその製造方法
US20090200559A1 (en) * 2008-02-13 2009-08-13 Denso Corporation Silicon carbide semiconductor device including deep layer
CN102859697A (zh) * 2011-04-01 2013-01-02 住友电气工业株式会社 碳化硅半导体器件

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3392665B2 (ja) 1995-11-06 2003-03-31 株式会社東芝 半導体装置
SE9704149D0 (sv) 1997-11-13 1997-11-13 Abb Research Ltd A semiconductor device of SiC and a transistor of SiC having an insulated gate
JP4189415B2 (ja) * 2006-06-30 2008-12-03 株式会社東芝 半導体装置
JP4793390B2 (ja) * 2008-02-13 2011-10-12 株式会社デンソー 炭化珪素半導体装置およびその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5963807A (en) * 1995-07-20 1999-10-05 Fuji Electric Co., Ltd. Silicon carbide field effect transistor with increased avalanche withstand capability
US6037632A (en) * 1995-11-06 2000-03-14 Kabushiki Kaisha Toshiba Semiconductor device
JP2001274395A (ja) * 2000-03-28 2001-10-05 Toshiba Corp 半導体デバイス及びその製造方法
US20090200559A1 (en) * 2008-02-13 2009-08-13 Denso Corporation Silicon carbide semiconductor device including deep layer
CN102859697A (zh) * 2011-04-01 2013-01-02 住友电气工业株式会社 碳化硅半导体器件

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107731894A (zh) * 2017-09-02 2018-02-23 西安交通大学 一种带浮空区的低导通电阻碳化硅igbt器件与制备方法
CN107731894B (zh) * 2017-09-02 2020-02-07 西安交通大学 一种带浮空区的低导通电阻碳化硅igbt器件与制备方法
CN107742646A (zh) * 2017-09-21 2018-02-27 北京世纪金光半导体有限公司 一种具有掩埋悬浮结的碳化硅平面栅mosfet器件元胞结构
CN108172609A (zh) * 2017-12-22 2018-06-15 北京世纪金光半导体有限公司 具有周边深沟槽保护环和接地环的碳化硅悬浮结mosfet器件
CN116259647A (zh) * 2022-09-06 2023-06-13 北京智慧能源研究院 一种半导体功率器件及其制备方法
CN121057268A (zh) * 2024-05-23 2025-12-02 无锡华润华晶微电子有限公司 碳化硅金属氧化物半导体场效应管及其制造方法
CN119545870A (zh) * 2024-11-27 2025-02-28 湖北九峰山实验室 一种半导体器件
CN119545870B (zh) * 2024-11-27 2025-09-12 湖北九峰山实验室 一种半导体器件

Also Published As

Publication number Publication date
US20140252374A1 (en) 2014-09-11
US8952393B2 (en) 2015-02-10
JP2014175518A (ja) 2014-09-22
WO2014141754A1 (ja) 2014-09-18
DE112014001221T5 (de) 2016-01-07

Similar Documents

Publication Publication Date Title
CN104380472B (zh) 碳化硅半导体器件
US8952393B2 (en) Silicon carbide semiconductor device
JP6064614B2 (ja) 炭化珪素半導体装置およびその製造方法
JP6171678B2 (ja) 炭化珪素半導体装置およびその製造方法
CN105074933B (zh) 碳化硅半导体器件及其制造方法
CN109952656A (zh) 碳化硅半导体器件
CN105074930B (zh) 碳化硅半导体器件
JP6075120B2 (ja) 炭化珪素半導体装置
JP2015156429A (ja) 炭化珪素半導体装置およびその製造方法
WO2014199748A1 (ja) 炭化珪素半導体装置
US9299790B2 (en) Silicon carbide semiconductor device
CN104584220B (zh) 用于制造碳化硅半导体器件的方法
CN104854702B (zh) 碳化硅半导体器件及其制造方法
US20130307061A1 (en) Semiconductor device
CN104321876A (zh) 用于制造碳化硅半导体器件的方法和碳化硅半导体器件
CN104541376A (zh) 碳化硅半导体器件

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20151223

WD01 Invention patent application deemed withdrawn after publication