JP2014120772A - チップ放熱構造 - Google Patents
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
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- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
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- H01L2224/161—Disposition
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- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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Abstract
【解決手段】第一のチップ表面と第一のチップ裏面とを有する第一のチップを備える電子製品に用いられるチップ放熱構造であって、少なくとも第一のチップの側辺を被覆するチップモールド封止材と、第一のチップの上方に位置し、第一のチップの第一のチップ裏面に接する第一ケースと、複数の第一のバンプを介して第一のチップの第一のチップ表面と接続されるパッケージ基板と、第一の面及び第二の面を有し、複数の半田を介して、第一の面でパッケージ基板と接続される回路板とを備えるチップ放熱構造。チップ放熱構造は、回路板の下方に位置し、回路板の第二の面に接する第二ケースを更に備えても良い。第一のチップに生じた熱エネルギーは第一のチップ裏面を介して第一ケースに伝導され、第一のチップ表面、第一のバンプ、パッケージ基板、半田、回路板を介して第二ケースに伝導される。
【選択図】図4
Description
Q1=ΔT/R1;Q2=ΔT/R2;Q3=ΔT/R3
Qc=Q1+Q2+Q3=ΔT/R1+ΔT/R2+ΔT/R3;
ΔT=Qc/(1/R1+1/R2+1/R3)
Q1’=ΔT’/ R1’; Q2’=ΔT’/R2;Q3’=ΔT’/ R3
Qc=Q1’+ Q2’+ Q3’=ΔT’/ R1’+ΔT’/R2+ΔT’/ R3
ΔT’= Qc/(1/R1’+1/R2+1/R3)
2 チップモールド封止材
3 バンプ
4 パッケージ基板
5 半田
6 回路板
7 下ケース
A 第一のチップ
A1 第一のチップ表面
A2 第一のチップ裏面
B 第二のチップ
B1 第二のチップ表面
B2 第二のチップ裏面
100、102 第一ケース
110 第一熱伝導材
200 チップモールド封止材
210 分離間隙
300 第一のバンプ
302 第二のバンプ
400 パッケージ基板
500 半田
600 回路板
700、702 第二ケース
710 第二熱伝導材
Claims (17)
- 電子製品に用いられるチップ放熱構造であって、
第一のチップ表面と第一のチップ裏面とを有する第一のチップと、
当該電子製品の外部の環境と、
当該第一のチップの側辺を被覆するチップモールド封止材と、
当該環境と当該第一のチップ裏面の両方に接する第一ケースと、
複数の第一のバンプを介して当該第一のチップの当該第一のチップ表面に接続されるパッケージ基板と、
第一の面及び第二の面を有し、複数の半田を介して、当該第一の面で当該パッケージ基板と接続される回路板と、を備えることを特徴とするチップ放熱構造。 - 当該回路板の下方に位置し、当該第一のチップに対応して、当該回路板の当該第二の面に接する第二ケースを更に備える請求項1に記載のチップ放熱構造。
- 当該パッケージ基板は複数の誘電体層を有し、各誘電体層の厚みは30μmより小さいことを特徴とする請求項1に記載のチップ放熱構造。
- 第二のチップ表面と第二のチップ裏面とを有する第二のチップを更に備え、当該チップモールド封止材は当該第二のチップの側辺を被覆することを特徴とする請求項1に記載のチップ放熱構造。
- 当該第二のチップのジャンクション温度は、当該第一ケースが当該第一のチップ裏面に接していない時の当該第二のチップのジャンクション温度より低いことを特徴とする請求項4に記載のチップ放熱構造。
- 当該第一のチップに対応して、当該回路板の当該第二の面に接する第二ケースを更に備え、且つ当該第二のチップのジャンクション温度は、当該第二ケースが当該第一のチップに対応する位置の当該回路板に接していない時の当該第二のチップのジャンクション温度より低いことを特徴とする請求項4に記載のチップ放熱構造。
- 当該パッケージ基板は複数の第二のバンプを介して当該第二のチップの当該第二のチップ表面に接続されることを特徴とする請求項4に記載のチップ放熱構造。
- 当該第一ケースは、更に当該第二のチップの当該第二のチップ裏面に接することを特徴とする請求項4に記載のチップ放熱構造。
- 当該第二のチップに対応する位置で、当該回路板の当該第二の面に接する第二ケースを更に備えることを特徴とする請求項4に記載のチップ放熱構造。
- 当該チップモールド封止材は、第一のチップと第二のチップとの間に分離間隙を有することを特徴とする請求項4に記載のチップ放熱構造。
- 当該第一のチップのジャンクション温度は、当該第一ケースが当該第一のチップ裏面に接していない時の当該第一のチップのジャンクション温度より低いことを特徴とする請求項7に記載のチップ放熱構造。
- 当該第一のチップのジャンクション温度は、当該第二ケースが当該第一のチップに対応する位置の当該回路板に接していない時の当該第一のチップのジャンクション温度より低いことを特徴とする請求項2に記載のチップ放熱構造。
- 当該第一のチップのジャンクション温度は、当該第一ケースが当該第一のチップ裏面に接していない時の当該第一のチップのジャンクション温度より低いことを特徴とする請求項1に記載のチップ放熱構造。
- 当該第一ケースは、当該第一のチップに対応する位置に、当該第一のチップ裏面と接するように下突出部分を有することを特徴とする請求項1に記載のチップ放熱構造。
- 当該第一ケースは第一熱伝導材を介して当該第一のチップの当該第一のチップ裏面に接することを特徴とする請求項1に記載のチップ放熱構造。
- 当該第二ケースは、当該第一のチップに対応する位置に、当該回路板の当該第二の面と接するように上突出部分を有することを特徴とする請求項2に記載のチップ放熱構造。
- 当該第二ケースは第二熱伝導材を介して当該回路板の当該第二の面に接することを特徴とする請求項2に記載のチップ放熱構造。
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TW101147925A TWI508238B (zh) | 2012-12-17 | 2012-12-17 | 晶片散熱系統 |
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US (2) | US9117792B2 (ja) |
EP (1) | EP2743979A3 (ja) |
JP (1) | JP2014120772A (ja) |
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JP2018113400A (ja) * | 2017-01-13 | 2018-07-19 | ブラザー工業株式会社 | 電子装置 |
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CN105578839B (zh) * | 2014-10-17 | 2019-03-15 | 中兴通讯股份有限公司 | 通信系统及其通信设备 |
US9901009B2 (en) * | 2015-03-10 | 2018-02-20 | Toshiba Memory Corporation | Semiconductor memory device |
US11085116B2 (en) * | 2017-03-22 | 2021-08-10 | The Boeing Company | Engine shaft assembly and method |
CN107369662B (zh) * | 2017-06-19 | 2020-11-24 | 北京嘉楠捷思信息技术有限公司 | 一种散热装置 |
WO2020038554A1 (en) * | 2018-08-20 | 2020-02-27 | Huawei Technologies Co., Ltd. | Forming a semiconductor device with heat conduction layers formed by laser direct structuring |
TWM585962U (zh) * | 2019-05-24 | 2019-11-01 | 宇瞻科技股份有限公司 | 固態硬碟散熱裝置 |
CN116153882A (zh) * | 2020-11-10 | 2023-05-23 | 华为技术有限公司 | 一种散热组件、电子设备及芯片封装结构 |
CN116963479B (zh) * | 2023-09-19 | 2024-06-21 | 宝德华南(深圳)热能系统有限公司 | 一种新能源汽车的adas的辅助散热系统 |
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JP7130916B2 (ja) | 2017-01-13 | 2022-09-06 | ブラザー工業株式会社 | 電子装置 |
Also Published As
Publication number | Publication date |
---|---|
US9362199B2 (en) | 2016-06-07 |
US20150243577A1 (en) | 2015-08-27 |
US9117792B2 (en) | 2015-08-25 |
US20140167244A1 (en) | 2014-06-19 |
EP2743979A3 (en) | 2017-12-13 |
EP2743979A2 (en) | 2014-06-18 |
CN103871982A (zh) | 2014-06-18 |
KR20140078547A (ko) | 2014-06-25 |
TWI508238B (zh) | 2015-11-11 |
TW201426930A (zh) | 2014-07-01 |
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