JP2014112677A5 - - Google Patents

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Publication number
JP2014112677A5
JP2014112677A5 JP2013246158A JP2013246158A JP2014112677A5 JP 2014112677 A5 JP2014112677 A5 JP 2014112677A5 JP 2013246158 A JP2013246158 A JP 2013246158A JP 2013246158 A JP2013246158 A JP 2013246158A JP 2014112677 A5 JP2014112677 A5 JP 2014112677A5
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JP
Japan
Prior art keywords
substrate
predetermined
magnetic layer
magnetic
anisotropy
Prior art date
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Granted
Application number
JP2013246158A
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English (en)
Japanese (ja)
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JP6046597B2 (ja
JP2014112677A (ja
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Publication date
Priority claimed from US13/689,409 external-priority patent/US9034150B2/en
Application filed filed Critical
Publication of JP2014112677A publication Critical patent/JP2014112677A/ja
Publication of JP2014112677A5 publication Critical patent/JP2014112677A5/ja
Application granted granted Critical
Publication of JP6046597B2 publication Critical patent/JP6046597B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2013246158A 2012-11-29 2013-11-28 薄膜を含む磁気層 Expired - Fee Related JP6046597B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/689,409 2012-11-29
US13/689,409 US9034150B2 (en) 2012-11-29 2012-11-29 Thin film with tuned anisotropy and magnetic moment

Publications (3)

Publication Number Publication Date
JP2014112677A JP2014112677A (ja) 2014-06-19
JP2014112677A5 true JP2014112677A5 (enExample) 2014-09-18
JP6046597B2 JP6046597B2 (ja) 2016-12-21

Family

ID=49916807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013246158A Expired - Fee Related JP6046597B2 (ja) 2012-11-29 2013-11-28 薄膜を含む磁気層

Country Status (5)

Country Link
US (1) US9034150B2 (enExample)
EP (1) EP2738137A1 (enExample)
JP (1) JP6046597B2 (enExample)
KR (2) KR20140070399A (enExample)
CN (1) CN103855298B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9856557B1 (en) 2016-01-22 2018-01-02 Seagate Technology Llc Fabrication of a multi-layered magnetic element
US10170691B2 (en) * 2016-01-28 2019-01-01 SK Hynix Inc. Electronic device and method for fabricating the same
US11031032B1 (en) * 2017-04-03 2021-06-08 Seagate Technology Llc Cryogenic magnetic alloys with less grain refinement dopants

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62238614A (ja) * 1986-04-09 1987-10-19 Fujitsu Ltd 異方性磁性膜の製造方法
US5590389A (en) 1994-12-23 1996-12-31 Johnson Matthey Electronics, Inc. Sputtering target with ultra-fine, oriented grains and method of making same
US5764567A (en) 1996-11-27 1998-06-09 International Business Machines Corporation Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response
JP2924785B2 (ja) * 1996-04-25 1999-07-26 日本電気株式会社 磁気抵抗効果素子薄膜及びその製造方法
US6139951A (en) 1997-12-12 2000-10-31 Seagate Technology Llc Magnetic recording medium with low temperature seedlayer for high signal-to-noise ratio
JP3677423B2 (ja) 1999-12-28 2005-08-03 株式会社東芝 熱アシスト磁気記録方法及び熱アシスト磁気記録装置
US6740397B1 (en) 2000-05-24 2004-05-25 Seagate Technology Llc Subseedlayers for magnetic recording media
US6946039B1 (en) 2000-11-02 2005-09-20 Honeywell International Inc. Physical vapor deposition targets, and methods of fabricating metallic materials
JP3619769B2 (ja) * 2000-11-09 2005-02-16 Ｔｄｋ株式会社 磁気抵抗効果素子の製造方法
JP3890893B2 (ja) 2000-12-28 2007-03-07 日本電気株式会社 スピントンネル磁気抵抗効果膜及び素子及びそれを用いた磁気抵抗センサー、及び磁気装置及びその製造方法
JP2003198002A (ja) * 2001-12-25 2003-07-11 Fujitsu Ltd 磁気抵抗効果膜および強磁性積層構造体
US6791796B2 (en) 2002-05-28 2004-09-14 Seagate Technology Llc Perpendicular writer with laminated main pole
JP2004326888A (ja) * 2003-04-23 2004-11-18 Sony Corp 磁気記録媒体
US6818961B1 (en) 2003-06-30 2004-11-16 Freescale Semiconductor, Inc. Oblique deposition to induce magnetic anisotropy for MRAM cells
US7061731B2 (en) 2003-11-17 2006-06-13 Seagate Technology Llc High magnetic anisotropy hard magnetic bias element
JP4529081B2 (ja) * 2004-11-30 2010-08-25 Ｔｄｋ株式会社 磁性薄膜
CN101765677B (zh) * 2007-08-29 2012-01-25 佳能安内华股份有限公司 通过溅射的成膜方法及其溅射设备
US7914916B2 (en) 2008-02-04 2011-03-29 Seagate Technology Llc Thermally stable high anisotropic high magnetic moment films
JPWO2009154009A1 (ja) * 2008-06-20 2011-11-24 キヤノンアネルバ株式会社 磁気抵抗素子の製造方法、スパッタ成膜チャンバー、スパッタ成膜チャンバーを有する磁気抵抗素子の製造装置、プログラム、記憶媒体
US8776542B2 (en) * 2009-12-25 2014-07-15 Canon Anelva Corporation Cooling system
JP2012140672A (ja) * 2010-12-28 2012-07-26 Canon Anelva Corp スパッタリング装置
JP5882934B2 (ja) * 2012-05-09 2016-03-09 シーゲイト テクノロジー エルエルシー スパッタリング装置

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