KR20140070399A - 테이퍼진 사이드 쉴드 측벽들을 갖는 데이터 라이터 - Google Patents

테이퍼진 사이드 쉴드 측벽들을 갖는 데이터 라이터 Download PDF

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Publication number
KR20140070399A
KR20140070399A KR1020130143035A KR20130143035A KR20140070399A KR 20140070399 A KR20140070399 A KR 20140070399A KR 1020130143035 A KR1020130143035 A KR 1020130143035A KR 20130143035 A KR20130143035 A KR 20130143035A KR 20140070399 A KR20140070399 A KR 20140070399A
Authority
KR
South Korea
Prior art keywords
shield
tip
write pole
pole
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020130143035A
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English (en)
Korean (ko)
Inventor
벤카테스와라 라오 인투리
웨이 티엔
조셉 문데너
Original Assignee
시게이트 테크놀로지 엘엘씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 시게이트 테크놀로지 엘엘씨 filed Critical 시게이트 테크놀로지 엘엘씨
Publication of KR20140070399A publication Critical patent/KR20140070399A/ko
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/187—Structure or manufacture of the surface of the head in physical contact with, or immediately adjacent to the recording medium; Pole pieces; Gap features
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/22—Heat treatment; Thermal decomposition; Chemical vapour deposition

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
  • Magnetic Heads (AREA)
  • Mram Or Spin Memory Techniques (AREA)
KR1020130143035A 2012-11-29 2013-11-22 테이퍼진 사이드 쉴드 측벽들을 갖는 데이터 라이터 Ceased KR20140070399A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/689,409 2012-11-29
US13/689,409 US9034150B2 (en) 2012-11-29 2012-11-29 Thin film with tuned anisotropy and magnetic moment

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR20150028228A Division KR20150035892A (ko) 2012-11-29 2015-02-27 테이퍼진 사이드 쉴드 측벽들을 갖는 데이터 라이터

Publications (1)

Publication Number Publication Date
KR20140070399A true KR20140070399A (ko) 2014-06-10

Family

ID=49916807

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020130143035A Ceased KR20140070399A (ko) 2012-11-29 2013-11-22 테이퍼진 사이드 쉴드 측벽들을 갖는 데이터 라이터
KR20150028228A Withdrawn KR20150035892A (ko) 2012-11-29 2015-02-27 테이퍼진 사이드 쉴드 측벽들을 갖는 데이터 라이터

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR20150028228A Withdrawn KR20150035892A (ko) 2012-11-29 2015-02-27 테이퍼진 사이드 쉴드 측벽들을 갖는 데이터 라이터

Country Status (5)

Country Link
US (1) US9034150B2 (enExample)
EP (1) EP2738137A1 (enExample)
JP (1) JP6046597B2 (enExample)
KR (2) KR20140070399A (enExample)
CN (1) CN103855298B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9856557B1 (en) 2016-01-22 2018-01-02 Seagate Technology Llc Fabrication of a multi-layered magnetic element
US10170691B2 (en) * 2016-01-28 2019-01-01 SK Hynix Inc. Electronic device and method for fabricating the same
US11031032B1 (en) * 2017-04-03 2021-06-08 Seagate Technology Llc Cryogenic magnetic alloys with less grain refinement dopants

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62238614A (ja) * 1986-04-09 1987-10-19 Fujitsu Ltd 異方性磁性膜の製造方法
US5590389A (en) 1994-12-23 1996-12-31 Johnson Matthey Electronics, Inc. Sputtering target with ultra-fine, oriented grains and method of making same
US5764567A (en) 1996-11-27 1998-06-09 International Business Machines Corporation Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response
JP2924785B2 (ja) 1996-04-25 1999-07-26 日本電気株式会社 磁気抵抗効果素子薄膜及びその製造方法
US6139951A (en) 1997-12-12 2000-10-31 Seagate Technology Llc Magnetic recording medium with low temperature seedlayer for high signal-to-noise ratio
JP3677423B2 (ja) 1999-12-28 2005-08-03 株式会社東芝 熱アシスト磁気記録方法及び熱アシスト磁気記録装置
US6740397B1 (en) 2000-05-24 2004-05-25 Seagate Technology Llc Subseedlayers for magnetic recording media
US6946039B1 (en) 2000-11-02 2005-09-20 Honeywell International Inc. Physical vapor deposition targets, and methods of fabricating metallic materials
JP3619769B2 (ja) * 2000-11-09 2005-02-16 Ｔｄｋ株式会社 磁気抵抗効果素子の製造方法
JP3890893B2 (ja) 2000-12-28 2007-03-07 日本電気株式会社 スピントンネル磁気抵抗効果膜及び素子及びそれを用いた磁気抵抗センサー、及び磁気装置及びその製造方法
JP2003198002A (ja) * 2001-12-25 2003-07-11 Fujitsu Ltd 磁気抵抗効果膜および強磁性積層構造体
US6791796B2 (en) 2002-05-28 2004-09-14 Seagate Technology Llc Perpendicular writer with laminated main pole
JP2004326888A (ja) * 2003-04-23 2004-11-18 Sony Corp 磁気記録媒体
US6818961B1 (en) 2003-06-30 2004-11-16 Freescale Semiconductor, Inc. Oblique deposition to induce magnetic anisotropy for MRAM cells
US7061731B2 (en) 2003-11-17 2006-06-13 Seagate Technology Llc High magnetic anisotropy hard magnetic bias element
JP4529081B2 (ja) * 2004-11-30 2010-08-25 Ｔｄｋ株式会社 磁性薄膜
JP4503098B2 (ja) * 2007-08-29 2010-07-14 キヤノンアネルバ株式会社 スパッタリングによる成膜方法とその装置
US7914916B2 (en) 2008-02-04 2011-03-29 Seagate Technology Llc Thermally stable high anisotropic high magnetic moment films
WO2009154009A1 (ja) * 2008-06-20 2009-12-23 キヤノンアネルバ株式会社 磁気抵抗素子の製造方法、スパッタ成膜チャンバー、スパッタ成膜チャンバーを有する磁気抵抗素子の製造装置、プログラム、記憶媒体
US8776542B2 (en) * 2009-12-25 2014-07-15 Canon Anelva Corporation Cooling system
JP2012140672A (ja) * 2010-12-28 2012-07-26 Canon Anelva Corp スパッタリング装置
JP5882934B2 (ja) * 2012-05-09 2016-03-09 シーゲイト テクノロジー エルエルシー スパッタリング装置

Also Published As

Publication number Publication date
US9034150B2 (en) 2015-05-19
JP2014112677A (ja) 2014-06-19
US20140147702A1 (en) 2014-05-29
EP2738137A1 (en) 2014-06-04
CN103855298B (zh) 2017-12-22
JP6046597B2 (ja) 2016-12-21
KR20150035892A (ko) 2015-04-07
CN103855298A (zh) 2014-06-11

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