JP6046597B2 - 薄膜を含む磁気層 - Google Patents
薄膜を含む磁気層 Download PDFInfo
- Publication number
- JP6046597B2 JP6046597B2 JP2013246158A JP2013246158A JP6046597B2 JP 6046597 B2 JP6046597 B2 JP 6046597B2 JP 2013246158 A JP2013246158 A JP 2013246158A JP 2013246158 A JP2013246158 A JP 2013246158A JP 6046597 B2 JP6046597 B2 JP 6046597B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic layer
- substrate
- magnetic
- anisotropy
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims description 25
- 239000000758 substrate Substances 0.000 claims description 38
- 238000000151 deposition Methods 0.000 claims description 24
- 230000008021 deposition Effects 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 3
- 238000013500 data storage Methods 0.000 description 21
- 238000010586 diagram Methods 0.000 description 7
- 239000007787 solid Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 230000035882 stress Effects 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000005381 magnetic domain Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 208000019901 Anxiety disease Diseases 0.000 description 1
- 229910002546 FeCo Inorganic materials 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000036506 anxiety Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/187—Structure or manufacture of the surface of the head in physical contact with, or immediately adjacent to the recording medium; Pole pieces; Gap features
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/22—Heat treatment; Thermal decomposition; Chemical vapour deposition
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thermal Sciences (AREA)
- Physics & Mathematics (AREA)
- Hall/Mr Elements (AREA)
- Thin Magnetic Films (AREA)
- Magnetic Heads (AREA)
- Mram Or Spin Memory Techniques (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/689,409 US9034150B2 (en) | 2012-11-29 | 2012-11-29 | Thin film with tuned anisotropy and magnetic moment |
| US13/689,409 | 2012-11-29 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014112677A JP2014112677A (ja) | 2014-06-19 |
| JP2014112677A5 JP2014112677A5 (enExample) | 2014-09-18 |
| JP6046597B2 true JP6046597B2 (ja) | 2016-12-21 |
Family
ID=49916807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013246158A Expired - Fee Related JP6046597B2 (ja) | 2012-11-29 | 2013-11-28 | 薄膜を含む磁気層 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9034150B2 (enExample) |
| EP (1) | EP2738137A1 (enExample) |
| JP (1) | JP6046597B2 (enExample) |
| KR (2) | KR20140070399A (enExample) |
| CN (1) | CN103855298B (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9856557B1 (en) | 2016-01-22 | 2018-01-02 | Seagate Technology Llc | Fabrication of a multi-layered magnetic element |
| US10170691B2 (en) * | 2016-01-28 | 2019-01-01 | SK Hynix Inc. | Electronic device and method for fabricating the same |
| US11031032B1 (en) * | 2017-04-03 | 2021-06-08 | Seagate Technology Llc | Cryogenic magnetic alloys with less grain refinement dopants |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62238614A (ja) * | 1986-04-09 | 1987-10-19 | Fujitsu Ltd | 異方性磁性膜の製造方法 |
| US5590389A (en) | 1994-12-23 | 1996-12-31 | Johnson Matthey Electronics, Inc. | Sputtering target with ultra-fine, oriented grains and method of making same |
| US5764567A (en) | 1996-11-27 | 1998-06-09 | International Business Machines Corporation | Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response |
| JP2924785B2 (ja) * | 1996-04-25 | 1999-07-26 | 日本電気株式会社 | 磁気抵抗効果素子薄膜及びその製造方法 |
| US6139951A (en) | 1997-12-12 | 2000-10-31 | Seagate Technology Llc | Magnetic recording medium with low temperature seedlayer for high signal-to-noise ratio |
| JP3677423B2 (ja) | 1999-12-28 | 2005-08-03 | 株式会社東芝 | 熱アシスト磁気記録方法及び熱アシスト磁気記録装置 |
| US6740397B1 (en) | 2000-05-24 | 2004-05-25 | Seagate Technology Llc | Subseedlayers for magnetic recording media |
| US6946039B1 (en) | 2000-11-02 | 2005-09-20 | Honeywell International Inc. | Physical vapor deposition targets, and methods of fabricating metallic materials |
| JP3619769B2 (ja) * | 2000-11-09 | 2005-02-16 | Ｔｄｋ株式会社 | 磁気抵抗効果素子の製造方法 |
| JP3890893B2 (ja) | 2000-12-28 | 2007-03-07 | 日本電気株式会社 | スピントンネル磁気抵抗効果膜及び素子及びそれを用いた磁気抵抗センサー、及び磁気装置及びその製造方法 |
| JP2003198002A (ja) * | 2001-12-25 | 2003-07-11 | Fujitsu Ltd | 磁気抵抗効果膜および強磁性積層構造体 |
| US6791796B2 (en) | 2002-05-28 | 2004-09-14 | Seagate Technology Llc | Perpendicular writer with laminated main pole |
| JP2004326888A (ja) * | 2003-04-23 | 2004-11-18 | Sony Corp | 磁気記録媒体 |
| US6818961B1 (en) | 2003-06-30 | 2004-11-16 | Freescale Semiconductor, Inc. | Oblique deposition to induce magnetic anisotropy for MRAM cells |
| US7061731B2 (en) | 2003-11-17 | 2006-06-13 | Seagate Technology Llc | High magnetic anisotropy hard magnetic bias element |
| JP4529081B2 (ja) * | 2004-11-30 | 2010-08-25 | Ｔｄｋ株式会社 | 磁性薄膜 |
| WO2009028055A1 (ja) * | 2007-08-29 | 2009-03-05 | Canon Anelva Corporation | スパッタリングによる成膜方法とその装置 |
| US7914916B2 (en) | 2008-02-04 | 2011-03-29 | Seagate Technology Llc | Thermally stable high anisotropic high magnetic moment films |
| GB2474167B (en) * | 2008-06-20 | 2015-07-29 | Canon Anelva Corp | Method for manufacturing magnetoresistive element |
| US8776542B2 (en) * | 2009-12-25 | 2014-07-15 | Canon Anelva Corporation | Cooling system |
| JP2012140672A (ja) * | 2010-12-28 | 2012-07-26 | Canon Anelva Corp | スパッタリング装置 |
| JP5882934B2 (ja) * | 2012-05-09 | 2016-03-09 | シーゲイト テクノロジー エルエルシー | スパッタリング装置 |
-
2012
- 2012-11-29 US US13/689,409 patent/US9034150B2/en active Active
-
2013
- 2013-11-22 KR KR1020130143035A patent/KR20140070399A/ko not_active Ceased
- 2013-11-27 EP EP20130194711 patent/EP2738137A1/en not_active Ceased
- 2013-11-28 CN CN201310625298.0A patent/CN103855298B/zh not_active Expired - Fee Related
- 2013-11-28 JP JP2013246158A patent/JP6046597B2/ja not_active Expired - Fee Related
-
2015
- 2015-02-27 KR KR20150028228A patent/KR20150035892A/ko not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| KR20150035892A (ko) | 2015-04-07 |
| US20140147702A1 (en) | 2014-05-29 |
| KR20140070399A (ko) | 2014-06-10 |
| JP2014112677A (ja) | 2014-06-19 |
| CN103855298B (zh) | 2017-12-22 |
| EP2738137A1 (en) | 2014-06-04 |
| CN103855298A (zh) | 2014-06-11 |
| US9034150B2 (en) | 2015-05-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6046597B2 (ja) | 薄膜を含む磁気層 | |
| JP6133932B2 (ja) | 傾斜した一軸異方性が調整された装置およびセンサ、ならびに傾斜した一軸異方性を調整する方法 | |
| KR101467976B1 (ko) | 감소된 응력 이방성을 갖는 박막 | |
| Asakura et al. | Observation of Omnidirectional Exchange Bias at All‐Antiferromagnetic Polycrystalline Heterointerface | |
| CN108695431B (zh) | 一种磁性隧道结的平坦化方法 | |
| JP6158531B2 (ja) | 磁気素子、装置および磁気素子の製造方法 | |
| WO2013141337A1 (ja) | 高い垂直磁気異方性を示す極薄垂直磁化膜、その製造方法及び用途 | |
| US10014013B2 (en) | L10-ordered MnAl thin films with high perpendicular magnetic anisotropy, and structures and devices made therewith | |
| US10121960B2 (en) | Method and system for providing magnetic junctions usable in spin transfer torque applications utilizing interstitial glass-forming agent(s) | |
| Adam et al. | Ferromagnetism modulation by phase change in Mn-doped GeTe chalcogenide magnetic materials | |
| Yu et al. | Enhancement of perpendicular coercivity for CoPt top layer in CoPt/AlN multilayer structure | |
| US7161763B2 (en) | GMR sensor with oriented hard bias stabilization | |
| Wang et al. | Embedded mask patterning: A nanopatterning process to fabricate FePt magnetic media | |
| Shoup et al. | Oscillation of interlayer coupling in epitaxial FePd| Ir| FePd (001) perpendicular synthetic antiferromagnet | |
| Shimatsu et al. | Dot arrays of L1-type FePt ordered alloy perpendicular films fabricated using low-temperature sputter film deposition | |
| George et al. | Nanostructure and magnetic properties of L1 FePt: X films | |
| KR101078872B1 (ko) | 자성 박막 부재 및 그 제조 방법 | |
| KR20160016692A (ko) | 튜닝된 마이크로구조를 갖는 데이터 판독기 | |
| Kataoka et al. | Magnetic anisotropy of L11-type (Co1-XMX) 50Pt50 (M: Ni, Fe, Cr, Mn) and Co50 (Pt1-XPdX) 50 ordered alloy perpendicular films | |
| Zhou et al. | Tunable storage states' transition in slotted ferromagnetic nanorings | |
| Xu | Microstructure Engineering and Thermal Properties of FePt-based Media for Heat-Assisted Magnetic Recording (HAMR) Technology | |
| Cheng et al. | Development of atomic-scale thin-film deposition system for perpendicular magnetic tunnel junctions with high tunneling magnetoresistance | |
| CN120400766A (zh) | 一种磁性薄膜沉积系统的控制方法、系统、设备及存储介质 | |
| CN113707803A (zh) | 一种自旋轨道转矩磁阻式随机存储器及其制造方法 | |
| Hara et al. | Jitter noise reduction by improving grain uniformity in granular media |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140801 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140801 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150709 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150908 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151207 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160315 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160613 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20161018 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20161117 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6046597 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| LAPS | Cancellation because of no payment of annual fees |