CN103855298B - 具有调谐的各向异性和磁矩的薄膜 - Google Patents

具有调谐的各向异性和磁矩的薄膜 Download PDF

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Publication number
CN103855298B
CN103855298B CN201310625298.0A CN201310625298A CN103855298B CN 103855298 B CN103855298 B CN 103855298B CN 201310625298 A CN201310625298 A CN 201310625298A CN 103855298 B CN103855298 B CN 103855298B
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CN
China
Prior art keywords
predetermined
magnetosphere
film
substrate
anisotropy
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Expired - Fee Related
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CN201310625298.0A
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English (en)
Chinese (zh)
Other versions
CN103855298A (zh
Inventor
V·R·印图瑞
田伟
J·芒德纳
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Seagate Technology LLC
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Seagate Technology LLC
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Publication of CN103855298A publication Critical patent/CN103855298A/zh
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Expired - Fee Related legal-status Critical Current
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/187—Structure or manufacture of the surface of the head in physical contact with, or immediately adjacent to the recording medium; Pole pieces; Gap features
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/22—Heat treatment; Thermal decomposition; Chemical vapour deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
  • Magnetic Heads (AREA)
  • Mram Or Spin Memory Techniques (AREA)
CN201310625298.0A 2012-11-29 2013-11-28 具有调谐的各向异性和磁矩的薄膜 Expired - Fee Related CN103855298B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/689,409 US9034150B2 (en) 2012-11-29 2012-11-29 Thin film with tuned anisotropy and magnetic moment
US13/689,409 2012-11-29

Publications (2)

Publication Number Publication Date
CN103855298A CN103855298A (zh) 2014-06-11
CN103855298B true CN103855298B (zh) 2017-12-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310625298.0A Expired - Fee Related CN103855298B (zh) 2012-11-29 2013-11-28 具有调谐的各向异性和磁矩的薄膜

Country Status (5)

Country Link
US (1) US9034150B2 (enExample)
EP (1) EP2738137A1 (enExample)
JP (1) JP6046597B2 (enExample)
KR (2) KR20140070399A (enExample)
CN (1) CN103855298B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9856557B1 (en) 2016-01-22 2018-01-02 Seagate Technology Llc Fabrication of a multi-layered magnetic element
US10170691B2 (en) * 2016-01-28 2019-01-01 SK Hynix Inc. Electronic device and method for fabricating the same
US11031032B1 (en) * 2017-04-03 2021-06-08 Seagate Technology Llc Cryogenic magnetic alloys with less grain refinement dopants

Citations (5)

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US5764567A (en) * 1996-11-27 1998-06-09 International Business Machines Corporation Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response
US5948553A (en) * 1996-04-25 1999-09-07 Nec Corporation Magnetic multilayer structure having magnetoresistance ratio and large magnetic sensitivity based on the giant magnetoresistance effect and process of fabrication thereof
CN1430205A (zh) * 2001-12-25 2003-07-16 富士通株式会社 具有可靠的单轴各向异性的铁磁叠层材料
CN1801410A (zh) * 2004-11-30 2006-07-12 Tdk株式会社 磁性薄膜及其形成方法、磁性元件以及电感器和磁性元件的制造方法
CN101765677A (zh) * 2007-08-29 2010-06-30 佳能安内华股份有限公司 通过溅射的成膜方法及其溅射设备

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JPS62238614A (ja) * 1986-04-09 1987-10-19 Fujitsu Ltd 異方性磁性膜の製造方法
US5590389A (en) 1994-12-23 1996-12-31 Johnson Matthey Electronics, Inc. Sputtering target with ultra-fine, oriented grains and method of making same
US6139951A (en) 1997-12-12 2000-10-31 Seagate Technology Llc Magnetic recording medium with low temperature seedlayer for high signal-to-noise ratio
JP3677423B2 (ja) 1999-12-28 2005-08-03 株式会社東芝 熱アシスト磁気記録方法及び熱アシスト磁気記録装置
US6740397B1 (en) 2000-05-24 2004-05-25 Seagate Technology Llc Subseedlayers for magnetic recording media
US6946039B1 (en) 2000-11-02 2005-09-20 Honeywell International Inc. Physical vapor deposition targets, and methods of fabricating metallic materials
JP3619769B2 (ja) * 2000-11-09 2005-02-16 Ｔｄｋ株式会社 磁気抵抗効果素子の製造方法
JP3890893B2 (ja) 2000-12-28 2007-03-07 日本電気株式会社 スピントンネル磁気抵抗効果膜及び素子及びそれを用いた磁気抵抗センサー、及び磁気装置及びその製造方法
US6791796B2 (en) 2002-05-28 2004-09-14 Seagate Technology Llc Perpendicular writer with laminated main pole
JP2004326888A (ja) * 2003-04-23 2004-11-18 Sony Corp 磁気記録媒体
US6818961B1 (en) 2003-06-30 2004-11-16 Freescale Semiconductor, Inc. Oblique deposition to induce magnetic anisotropy for MRAM cells
US7061731B2 (en) 2003-11-17 2006-06-13 Seagate Technology Llc High magnetic anisotropy hard magnetic bias element
US7914916B2 (en) 2008-02-04 2011-03-29 Seagate Technology Llc Thermally stable high anisotropic high magnetic moment films
GB2474167B (en) * 2008-06-20 2015-07-29 Canon Anelva Corp Method for manufacturing magnetoresistive element
US8776542B2 (en) * 2009-12-25 2014-07-15 Canon Anelva Corporation Cooling system
JP2012140672A (ja) * 2010-12-28 2012-07-26 Canon Anelva Corp スパッタリング装置
JP5882934B2 (ja) * 2012-05-09 2016-03-09 シーゲイト テクノロジー エルエルシー スパッタリング装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5948553A (en) * 1996-04-25 1999-09-07 Nec Corporation Magnetic multilayer structure having magnetoresistance ratio and large magnetic sensitivity based on the giant magnetoresistance effect and process of fabrication thereof
US5764567A (en) * 1996-11-27 1998-06-09 International Business Machines Corporation Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response
CN1430205A (zh) * 2001-12-25 2003-07-16 富士通株式会社 具有可靠的单轴各向异性的铁磁叠层材料
CN1801410A (zh) * 2004-11-30 2006-07-12 Tdk株式会社 磁性薄膜及其形成方法、磁性元件以及电感器和磁性元件的制造方法
CN101765677A (zh) * 2007-08-29 2010-06-30 佳能安内华股份有限公司 通过溅射的成膜方法及其溅射设备

Also Published As

Publication number Publication date
KR20150035892A (ko) 2015-04-07
US20140147702A1 (en) 2014-05-29
KR20140070399A (ko) 2014-06-10
JP6046597B2 (ja) 2016-12-21
JP2014112677A (ja) 2014-06-19
EP2738137A1 (en) 2014-06-04
CN103855298A (zh) 2014-06-11
US9034150B2 (en) 2015-05-19

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Granted publication date: 20171222