JP2014093407A - エッチング液、これを用いたエッチング方法及び半導体素子の製造方法 - Google Patents

エッチング液、これを用いたエッチング方法及び半導体素子の製造方法 Download PDF

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Publication number
JP2014093407A
JP2014093407A JP2012242731A JP2012242731A JP2014093407A JP 2014093407 A JP2014093407 A JP 2014093407A JP 2012242731 A JP2012242731 A JP 2012242731A JP 2012242731 A JP2012242731 A JP 2012242731A JP 2014093407 A JP2014093407 A JP 2014093407A
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Japan
Prior art keywords
etching
group
layer
carbon atoms
acid
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Pending
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JP2012242731A
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English (en)
Japanese (ja)
Inventor
Atsushi Mizutani
篤史 水谷
Tetsuya Kamimura
上村　　哲也
Tadashi Inaba
正 稲葉
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Fujifilm Corp
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Fujifilm Corp
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Priority to JP2012242731A priority Critical patent/JP2014093407A/ja
Priority to PCT/JP2013/079380 priority patent/WO2014069517A1/fr
Priority to TW102139446A priority patent/TWI605156B/zh
Publication of JP2014093407A publication Critical patent/JP2014093407A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2012242731A 2012-11-02 2012-11-02 エッチング液、これを用いたエッチング方法及び半導体素子の製造方法 Pending JP2014093407A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012242731A JP2014093407A (ja) 2012-11-02 2012-11-02 エッチング液、これを用いたエッチング方法及び半導体素子の製造方法
PCT/JP2013/079380 WO2014069517A1 (fr) 2012-11-02 2013-10-30 Liquide de gravure, procédé de gravure le mettant en œuvre, et procédé de fabrication d'élément à semi-conducteur
TW102139446A TWI605156B (zh) 2012-11-02 2013-10-31 蝕刻液、使用其的蝕刻方法及半導體元件的製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012242731A JP2014093407A (ja) 2012-11-02 2012-11-02 エッチング液、これを用いたエッチング方法及び半導体素子の製造方法

Publications (1)

Publication Number Publication Date
JP2014093407A true JP2014093407A (ja) 2014-05-19

Family

ID=50627417

Family Applications (1)

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JP2012242731A Pending JP2014093407A (ja) 2012-11-02 2012-11-02 エッチング液、これを用いたエッチング方法及び半導体素子の製造方法

Country Status (3)

Country Link
JP (1) JP2014093407A (fr)
TW (1) TWI605156B (fr)
WO (1) WO2014069517A1 (fr)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016213461A (ja) * 2015-05-01 2016-12-15 エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ 窒化チタンハードマスク及びエッチ残留物除去
KR20170042240A (ko) 2015-10-08 2017-04-18 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 반도체소자의 세정용 액체 조성물 및 반도체소자의 세정방법, 그리고 반도체소자의 제조방법
KR20170044586A (ko) 2015-10-15 2017-04-25 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 반도체소자의 세정용 액체 조성물, 반도체소자의 세정방법 및 반도체소자의 제조방법
KR20180012372A (ko) * 2016-07-26 2018-02-06 삼성디스플레이 주식회사 식각액 조성물 및 이를 이용한 금속 패턴 제조 방법
WO2020054291A1 (fr) * 2018-09-13 2020-03-19 富士フイルム株式会社 Solution chimique
JPWO2021176913A1 (fr) * 2020-03-04 2021-09-10
JP2021528867A (ja) * 2018-07-06 2021-10-21 インテグリス・インコーポレーテッド 材料を選択的にエッチングするための改善
WO2021230063A1 (fr) * 2020-05-15 2021-11-18 富士フイルムエレクトロニクスマテリアルズ株式会社 Solution de nettoyage et procédé de nettoyage de substrat semi-conducteur
JP2022502835A (ja) * 2018-09-12 2022-01-11 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド エッチング組成物
WO2022172862A1 (fr) * 2021-02-12 2022-08-18 三菱瓦斯化学株式会社 Composition de nettoyage de substrat semi-conducteur, procédé de nettoyage de substrat semi-conducteur, et procédé de production de substrat semi-conducteur
WO2022202646A1 (fr) * 2021-03-23 2022-09-29 三菱瓦斯化学株式会社 Procédé de fabrication d'un substrat semi-conducteur pour éléments de mémoire
KR20230125832A (ko) 2021-01-07 2023-08-29 샌트랄 글래스 컴퍼니 리미티드 웨트 에칭 용액 및 웨트 에칭 방법

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI558850B (zh) * 2014-03-29 2016-11-21 精密聚合物股份有限公司 電子零件用處理液及電子零件之製造方法
JP6121959B2 (ja) 2014-09-11 2017-04-26 株式会社東芝 エッチング方法、物品及び半導体装置の製造方法、並びにエッチング液
EP3918110A4 (fr) * 2019-01-31 2022-11-02 FUJIFILM Electronic Materials U.S.A, Inc. Compositions de gravure
CN112725803B (zh) * 2020-12-22 2022-11-15 江苏奥首材料科技有限公司 一种晶圆级封装用钛蚀刻液
CN114989825B (zh) * 2022-06-30 2023-07-11 湖北兴福电子材料股份有限公司 一种掺钪氮化铝和钨的选择性蚀刻液

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07281445A (ja) * 1994-04-11 1995-10-27 Toshiba Corp 半導体装置
JPH11145144A (ja) * 1997-11-07 1999-05-28 Yamaha Corp 導電層形成法
JP2008285508A (ja) * 2007-05-15 2008-11-27 Mitsubishi Gas Chem Co Inc 洗浄用組成物
JP2008547202A (ja) * 2005-06-13 2008-12-25 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 金属ケイ化物の形成後の金属または金属合金の選択的な除去のための組成物および方法
JP2009021516A (ja) * 2007-07-13 2009-01-29 Tokyo Ohka Kogyo Co Ltd 窒化チタン剥離液、及び窒化チタン被膜の剥離方法
JP2009019255A (ja) * 2007-07-13 2009-01-29 Tokyo Ohka Kogyo Co Ltd 窒化チタン剥離液、及び窒化チタン被膜の剥離方法
JP2009044129A (ja) * 2007-07-13 2009-02-26 Tokyo Ohka Kogyo Co Ltd 窒化チタン剥離液、及び窒化チタン被膜の剥離方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001007197A (ja) * 1999-06-25 2001-01-12 Sony Corp 半導体装置の製造方法
JP2001077118A (ja) * 1999-06-30 2001-03-23 Toshiba Corp 半導体装置およびその製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07281445A (ja) * 1994-04-11 1995-10-27 Toshiba Corp 半導体装置
JPH11145144A (ja) * 1997-11-07 1999-05-28 Yamaha Corp 導電層形成法
JP2008547202A (ja) * 2005-06-13 2008-12-25 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 金属ケイ化物の形成後の金属または金属合金の選択的な除去のための組成物および方法
JP2008285508A (ja) * 2007-05-15 2008-11-27 Mitsubishi Gas Chem Co Inc 洗浄用組成物
JP2009021516A (ja) * 2007-07-13 2009-01-29 Tokyo Ohka Kogyo Co Ltd 窒化チタン剥離液、及び窒化チタン被膜の剥離方法
JP2009019255A (ja) * 2007-07-13 2009-01-29 Tokyo Ohka Kogyo Co Ltd 窒化チタン剥離液、及び窒化チタン被膜の剥離方法
JP2009044129A (ja) * 2007-07-13 2009-02-26 Tokyo Ohka Kogyo Co Ltd 窒化チタン剥離液、及び窒化チタン被膜の剥離方法

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10711227B2 (en) 2015-05-01 2020-07-14 Versum Materials Us, Llc TiN hard mask and etch residue removal
JP2018093225A (ja) * 2015-05-01 2018-06-14 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 窒化チタンハードマスク及びエッチ残留物除去
JP2016213461A (ja) * 2015-05-01 2016-12-15 エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ 窒化チタンハードマスク及びエッチ残留物除去
US9976111B2 (en) 2015-05-01 2018-05-22 Versum Materials Us, Llc TiN hard mask and etch residual removal
US10301581B2 (en) 2015-10-08 2019-05-28 Mitsubishi Gas Chemical Company, Inc. Liquid composition for cleaning semiconductor device, method for cleaning semiconductor device, and method for fabricating semiconductor device
KR20170042240A (ko) 2015-10-08 2017-04-18 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 반도체소자의 세정용 액체 조성물 및 반도체소자의 세정방법, 그리고 반도체소자의 제조방법
KR20170044586A (ko) 2015-10-15 2017-04-25 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 반도체소자의 세정용 액체 조성물, 반도체소자의 세정방법 및 반도체소자의 제조방법
KR20180012372A (ko) * 2016-07-26 2018-02-06 삼성디스플레이 주식회사 식각액 조성물 및 이를 이용한 금속 패턴 제조 방법
KR102677476B1 (ko) * 2016-07-26 2024-06-24 삼성디스플레이 주식회사 식각액 조성물 및 이를 이용한 금속 패턴 제조 방법
JP7128948B2 (ja) 2018-07-06 2022-08-31 インテグリス・インコーポレーテッド 材料を選択的にエッチングするための改善
JP2021528867A (ja) * 2018-07-06 2021-10-21 インテグリス・インコーポレーテッド 材料を選択的にエッチングするための改善
US12104108B2 (en) 2018-09-12 2024-10-01 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions
JP2022502835A (ja) * 2018-09-12 2022-01-11 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド エッチング組成物
JP7504081B2 (ja) 2018-09-12 2024-06-21 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド エッチング組成物
WO2020054291A1 (fr) * 2018-09-13 2020-03-19 富士フイルム株式会社 Solution chimique
JPWO2020054291A1 (ja) * 2018-09-13 2021-09-02 富士フイルム株式会社 薬液
JPWO2021176913A1 (fr) * 2020-03-04 2021-09-10
WO2021176913A1 (fr) * 2020-03-04 2021-09-10 富士フイルム株式会社 Solution de traitement et récipient de solution de traitement
WO2021230063A1 (fr) * 2020-05-15 2021-11-18 富士フイルムエレクトロニクスマテリアルズ株式会社 Solution de nettoyage et procédé de nettoyage de substrat semi-conducteur
KR20230125832A (ko) 2021-01-07 2023-08-29 샌트랄 글래스 컴퍼니 리미티드 웨트 에칭 용액 및 웨트 에칭 방법
WO2022172862A1 (fr) * 2021-02-12 2022-08-18 三菱瓦斯化学株式会社 Composition de nettoyage de substrat semi-conducteur, procédé de nettoyage de substrat semi-conducteur, et procédé de production de substrat semi-conducteur
WO2022202646A1 (fr) * 2021-03-23 2022-09-29 三菱瓦斯化学株式会社 Procédé de fabrication d'un substrat semi-conducteur pour éléments de mémoire

Also Published As

Publication number Publication date
WO2014069517A1 (fr) 2014-05-08
TW201430172A (zh) 2014-08-01
TWI605156B (zh) 2017-11-11

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