JP2014089790A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2014089790A5 JP2014089790A5 JP2012240610A JP2012240610A JP2014089790A5 JP 2014089790 A5 JP2014089790 A5 JP 2014089790A5 JP 2012240610 A JP2012240610 A JP 2012240610A JP 2012240610 A JP2012240610 A JP 2012240610A JP 2014089790 A5 JP2014089790 A5 JP 2014089790A5
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- replica
- semiconductor device
- assist voltage
- response
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 19
- 230000004044 response Effects 0.000 claims 18
- 230000004913 activation Effects 0.000 claims 7
- 239000011159 matrix material Substances 0.000 claims 3
- 238000006243 chemical reaction Methods 0.000 claims 1
- 230000001934 delay Effects 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012240610A JP2014089790A (ja) | 2012-10-31 | 2012-10-31 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012240610A JP2014089790A (ja) | 2012-10-31 | 2012-10-31 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2014089790A JP2014089790A (ja) | 2014-05-15 |
| JP2014089790A5 true JP2014089790A5 (enExample) | 2015-10-01 |
Family
ID=50791560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012240610A Pending JP2014089790A (ja) | 2012-10-31 | 2012-10-31 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2014089790A (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109498060B (zh) * | 2018-12-25 | 2021-04-13 | 西北大学 | 基于ctlm与超声波技术的乳腺成像设备及方法 |
| US10811088B2 (en) * | 2019-03-12 | 2020-10-20 | Qualcomm Incorporated | Access assist with wordline adjustment with tracking cell |
| JP7196040B2 (ja) * | 2019-03-14 | 2022-12-26 | 株式会社東芝 | 半導体記憶装置 |
| CN114566202B (zh) * | 2022-04-26 | 2022-08-02 | 长鑫存储技术有限公司 | 一种感测放大器的测试方法、装置、存储装置及存储系统 |
| CN118887982B (zh) * | 2023-04-25 | 2025-10-03 | 长鑫存储技术有限公司 | 字线驱动电路以及存储器 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002109887A (ja) * | 2000-09-29 | 2002-04-12 | Hitachi Ltd | 半導体集積回路 |
| JP2003059273A (ja) * | 2001-08-09 | 2003-02-28 | Hitachi Ltd | 半導体記憶装置 |
| JP4439167B2 (ja) * | 2002-08-30 | 2010-03-24 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
| JP4373154B2 (ja) * | 2003-07-18 | 2009-11-25 | 株式会社半導体エネルギー研究所 | メモリ回路およびそのメモリ回路を有する表示装置、電子機器 |
| JP5328386B2 (ja) * | 2009-01-15 | 2013-10-30 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置およびその動作方法 |
| JP2012123877A (ja) * | 2010-12-09 | 2012-06-28 | Toshiba Corp | 半導体記憶装置 |
-
2012
- 2012-10-31 JP JP2012240610A patent/JP2014089790A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2008521157A5 (enExample) | ||
| JP2014089790A5 (enExample) | ||
| KR101716714B1 (ko) | 클럭 신호에 동기하는 반도체 메모리 장치 | |
| JP2004005777A5 (enExample) | ||
| JP2010009674A5 (enExample) | ||
| JP2012142562A5 (ja) | 半導体装置 | |
| TW200620310A (en) | Memory array with fast bit line precharge | |
| JP2009033329A5 (enExample) | ||
| WO2014066462A4 (en) | Apparatus and method for reforming resistive memory cells | |
| JP2017054570A5 (enExample) | ||
| JP2009230805A5 (enExample) | ||
| KR100920843B1 (ko) | 반도체 메모리 장치의 오토리프레쉬 동작 제어회로 | |
| JP4992494B2 (ja) | 半導体記憶装置 | |
| JP2009110616A5 (enExample) | ||
| JP2016157504A5 (enExample) | ||
| GB2565257A (en) | A memory unit | |
| TW201824262A (zh) | 具有減小峰值的喚醒電流的記憶體胞 | |
| JP2008097804A5 (enExample) | ||
| US20140211578A1 (en) | Boosted read write word line | |
| KR20140146369A (ko) | 반도체 메모리 장치 및 메모리 시스템 | |
| US20160180902A1 (en) | Semiconductor memory device | |
| TW200723306A (en) | Semiconductor memory device and method of controlling sub word line driver thereof | |
| JP2007305288A5 (enExample) | ||
| KR101020297B1 (ko) | 워드라인 구동회로 | |
| KR100940844B1 (ko) | 반도체 메모리 장치의 센스앰프 구동회로 |