JP2014089790A - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP2014089790A
JP2014089790A JP2012240610A JP2012240610A JP2014089790A JP 2014089790 A JP2014089790 A JP 2014089790A JP 2012240610 A JP2012240610 A JP 2012240610A JP 2012240610 A JP2012240610 A JP 2012240610A JP 2014089790 A JP2014089790 A JP 2014089790A
Authority
JP
Japan
Prior art keywords
replica
circuit
voltage
sense amplifier
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012240610A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014089790A5 (enExample
Inventor
Shigenobu Komatsu
成亘 小松
Noriaki Maeda
徳章 前田
Yasuhisa Shimazaki
靖久 島崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2012240610A priority Critical patent/JP2014089790A/ja
Publication of JP2014089790A publication Critical patent/JP2014089790A/ja
Publication of JP2014089790A5 publication Critical patent/JP2014089790A5/ja
Pending legal-status Critical Current

Links

Images

Landscapes

  • Static Random-Access Memory (AREA)
JP2012240610A 2012-10-31 2012-10-31 半導体装置 Pending JP2014089790A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012240610A JP2014089790A (ja) 2012-10-31 2012-10-31 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012240610A JP2014089790A (ja) 2012-10-31 2012-10-31 半導体装置

Publications (2)

Publication Number Publication Date
JP2014089790A true JP2014089790A (ja) 2014-05-15
JP2014089790A5 JP2014089790A5 (enExample) 2015-10-01

Family

ID=50791560

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012240610A Pending JP2014089790A (ja) 2012-10-31 2012-10-31 半導体装置

Country Status (1)

Country Link
JP (1) JP2014089790A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109498060A (zh) * 2018-12-25 2019-03-22 西北大学 基于ctlm与超声波技术的乳腺成像设备及方法
WO2020185469A1 (en) * 2019-03-12 2020-09-17 Qualcomm Incorporated Improved access assist with wordline adjustment with tracking cell
JP2020155196A (ja) * 2019-03-14 2020-09-24 株式会社東芝 半導体記憶装置
CN114566202A (zh) * 2022-04-26 2022-05-31 长鑫存储技术有限公司 一种感测放大器的测试方法、装置、存储装置及存储系统
CN118887982A (zh) * 2023-04-25 2024-11-01 长鑫存储技术有限公司 字线驱动电路以及存储器

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002109887A (ja) * 2000-09-29 2002-04-12 Hitachi Ltd 半導体集積回路
JP2003059273A (ja) * 2001-08-09 2003-02-28 Hitachi Ltd 半導体記憶装置
JP2004095058A (ja) * 2002-08-30 2004-03-25 Renesas Technology Corp 半導体記憶装置
JP2005038557A (ja) * 2003-07-18 2005-02-10 Semiconductor Energy Lab Co Ltd メモリ回路およびメモリ回路を有する表示装置
JP2010165415A (ja) * 2009-01-15 2010-07-29 Renesas Technology Corp 半導体集積回路装置およびその動作方法
JP2012123877A (ja) * 2010-12-09 2012-06-28 Toshiba Corp 半導体記憶装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002109887A (ja) * 2000-09-29 2002-04-12 Hitachi Ltd 半導体集積回路
JP2003059273A (ja) * 2001-08-09 2003-02-28 Hitachi Ltd 半導体記憶装置
JP2004095058A (ja) * 2002-08-30 2004-03-25 Renesas Technology Corp 半導体記憶装置
JP2005038557A (ja) * 2003-07-18 2005-02-10 Semiconductor Energy Lab Co Ltd メモリ回路およびメモリ回路を有する表示装置
JP2010165415A (ja) * 2009-01-15 2010-07-29 Renesas Technology Corp 半導体集積回路装置およびその動作方法
JP2012123877A (ja) * 2010-12-09 2012-06-28 Toshiba Corp 半導体記憶装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109498060A (zh) * 2018-12-25 2019-03-22 西北大学 基于ctlm与超声波技术的乳腺成像设备及方法
WO2020185469A1 (en) * 2019-03-12 2020-09-17 Qualcomm Incorporated Improved access assist with wordline adjustment with tracking cell
JP2020155196A (ja) * 2019-03-14 2020-09-24 株式会社東芝 半導体記憶装置
CN114566202A (zh) * 2022-04-26 2022-05-31 长鑫存储技术有限公司 一种感测放大器的测试方法、装置、存储装置及存储系统
CN114566202B (zh) * 2022-04-26 2022-08-02 长鑫存储技术有限公司 一种感测放大器的测试方法、装置、存储装置及存储系统
CN118887982A (zh) * 2023-04-25 2024-11-01 长鑫存储技术有限公司 字线驱动电路以及存储器

Similar Documents

Publication Publication Date Title
JP5068088B2 (ja) 半導体記憶装置
JP5878837B2 (ja) 半導体装置
US6826108B2 (en) Integrated circuit memory device power supply circuits and methods of operating same
US8779800B2 (en) Control signal generation circuit and sense amplifier circuit using the same
US8824237B2 (en) Pre-decoder for dual power memory
JP5621704B2 (ja) 半導体記憶装置
JP5006334B2 (ja) セルフリフレッシュを用いた低消費電力の半導体集積回路
JP2012230737A (ja) 半導体装置
JP2014089790A (ja) 半導体装置
JPH09231767A (ja) スタティック型半導体記憶装置
JP5057757B2 (ja) 半導体集積回路
CN108962311B (zh) 一种顺序进入和退出低功耗状态的sram控制电路及方法
US7660176B2 (en) Semiconductor memory device and method for driving the same
US9019788B2 (en) Techniques for accessing memory cells
JP4562515B2 (ja) 論理回路及びワードドライバ回路
JP2008176907A (ja) 半導体記憶装置
JP2011135436A (ja) 半導体装置
US7675804B2 (en) Semiconductor integrated circuit device and semiconductor device including plurality of semiconductor circuits
US8531895B2 (en) Current control circuit
US8717064B2 (en) Semiconductor integrated circuit
US8553483B2 (en) Semiconductor memory device
CN100552816C (zh) 半导体存储装置
JP2005092925A (ja) 半導体集積回路
JP2010186513A (ja) 半導体記憶装置
JP2005116131A (ja) 信号線駆動方法、回路、および半導体メモリ装置

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150812

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150812

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160720

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160802

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20170207