JP2014044976A - プラズマ処理装置及びプラズマ処理方法 - Google Patents
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- 238000003672 processing method Methods 0.000 title claims abstract description 27
- 238000005530 etching Methods 0.000 claims description 106
- 239000007795 chemical reaction product Substances 0.000 claims description 56
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 12
- 238000001020 plasma etching Methods 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 11
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 7
- 238000000034 method Methods 0.000 description 44
- 239000007789 gas Substances 0.000 description 35
- 230000000694 effects Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 7
- 230000003252 repetitive effect Effects 0.000 description 7
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000010187 selection method Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】本発明は 真空容器と、前記真空容器内にプラズマを生成するための第1の高周波電源と、前記真空容器内に配置され試料を載置する試料台と、前記試料台に高周波電力を供給する第2の高周波電源とを備えるプラズマ処理装置において、前記第1の高周波電源または前記第2の高周波電源の少なくともいずれか1つは、時間変調された高周波電力を供給し、前記時間変調を制御するパラメータの一つは、2つ以上の異なる制御範囲を有し、前記制御範囲の一つは、高精度な制御を行うための制御範囲であることを特徴とする。
【選択図】図15
Description
本発明は、上記の制御用パラメータの少なくとも一つの制御範囲を少なくとも2つの異なる領域に分割し、前記領域の1つは、高精度な制御が必要な領域であることを特徴とする。
)とを設置し、密封することにより処理室104を形成する。シャワープレート102にはエッチングガスを流すためのガス供給装置105が接続される。
また、真空容器101には排気用開閉バルブ117及び排気速度可変バルブ118を介し真空排気装置106が接続されている。処理室104内は排気用開閉バルブ117を開とし、真空排気装置106を駆動することで減圧され、真空状態となる。処理室104内の圧力は排気速度可変バルブ118により所望の圧力に調整される。エッチングガスは、ガス供給装置105からシャワープレート102を介して処理室104内に導入され、排気速度可変バルブ118を介して真空排気装置106によって排気される。また、シャワープレート102に対向して真空容器101の下部に試料台である試料載置用電極111が設けられる。
次に、試料に高周波電力を供給する高周波電源から供給される高周波電力を時間変調し、繰り返し周波数を制御パラメータとする場合、領域Aと領域Cからなる繰り返し周波数領域1と、領域Bと領域Dからなる繰り返し周波数領域2と、を制御領域とする一実施例を以下、説明する。
次に本発明に係るプラズマ処理装置を用いて多層膜をプラズマエッチングするプラズマ処理方法について以下に説明する。
102・・・シャワープレート
103・・・誘電体窓
104・・・処理室
105・・・ガス供給装置
106・・・真空排気装置
107・・・導波管
108・・・パルス発生器
109・・・電磁波発生用電源
110・・・磁場発生コイル
111・・・ウエハ載置用電極
112・・・ウエハ
113・・・マッチング回路
114・・・高周波バイアス電源
115・・・高周波フィルター
116・・・直流電源
117・・・排気用開閉バルブ
118・・・排気速度可変バルブ
120・・・制御部
121・・・パソコン
122・・・マイコン
123・・・D/Aコンバータ
124・・・A/Dコンバータ
125・・・信号処理部
126・・・高周波バイアス出力部
127・・・第一の高周波電源
128・・・第二の高周波電源
129・・・第一のパルス発生器
130・・・第二のパルス発生器。
Claims (9)
- 真空容器と、前記真空容器内にプラズマを生成するための第1の高周波電源と、前記真空容器内に配置され試料を載置する試料台と、前記試料台に高周波電力を供給する第2の高周波電源とを備えるプラズマ処理装置において、
前記第1の高周波電源または前記第2の高周波電源の少なくともいずれか1つは、時間変調された高周波電力を供給し、前記時間変調を制御するパラメータの一つは、2つ以上の異なる制御範囲を有し、前記制御範囲の一つは、高精度な制御を行うための制御範囲であることを特徴とするプラズマ処理装置。 - 請求項1記載のプラズマ処理装置において、
前記パラメータは、デューティー比、繰り返し周波数、オン時間またはオフ時間の少なくともいずれか一つであること特徴とするプラズマ処理装置。 - 請求項2記載のプラズマ処理装置において、
前記第1の高周波電源または前記第2の高周波電源の少なくともいずれか1つは、A/Dコンバータとパルス発生器とを具備し、
前記A/Dコンバータは、前記2つ以上の異なる制御範囲をそれぞれ異なるタイミングで受信し、
前記パルス発生器は、前記A/Dコンバータが受信した前記2つ以上の異なる制御範囲のそれぞれから制御範囲切替え信号により選択された制御範囲で制御されるパルスを発生することを特徴とするプラズマ処理装置。 - 請求項3記載のプラズマ処理装置において、
前記第1の高周波電源または前記第2の高周波電源の少なくともいずれか1つは、前記第2の高周波電源であることを特徴とするプラズマ処理装置。 - 請求項2記載のプラズマ処理装置において、
前記第1の高周波電源または前記第2の高周波電源の少なくともいずれか1つは、前記2つ以上の異なる制御範囲の数と同数の高周波電源を備えることを特徴とするプラズマ処理装置。 - 真空容器と、前記真空容器内にプラズマを生成するための第1の高周波電源と、前記真空容器内に配置され試料を載置する試料台と、前記試料台に高周波電力を供給する第2の高周波電源とを備えるプラズマ処理装置を用いたプラズマ処理方法において、
前記第1の高周波電源または前記第2の高周波電源の少なくともいずれか1つは、時間変調された高周波電力を供給し、2つ以上の異なる制御範囲を有するパラメータにより前記時間変調を制御し、前記制御範囲の一つは、高精度な制御を行うための制御範囲であることを特徴とするプラズマ処理方法。 - 請求項6記載のプラズマ処理方法において、
前記時間変調された高周波電力の印加されない期間は、10〜1000msであることを特徴とするプラズマ処理方法。 - 請求項6記載のプラズマ処理方法において、
前記時間変調された高周波電力の印加されない期間が反応生成物の滞在時間以上であることを特徴とするプラズマ処理方法。 - Poly−Si膜とSiO2膜とアモルファスカーボン膜とSiN膜とBARC膜とを有する試料に時間変調された高周波電力を供給しながらプラズマエッチングするプラズマ処理方法において、
繰り返し周波数は、高精度な制御が必要な第一の制御範囲と高精度な制御が必要でない第二の制御範囲とを有し、
デューティー比は、高精度な制御が必要な第三の制御範囲と高精度な制御が必要でない第四の制御範囲とを有し、
前記SiN膜を前記第一の制御範囲および前記第四の制御範囲でエッチングし、
前記アモルファスカーボン膜を前記第二の制御範囲および前記第四の制御範囲でエッチングし、
前記SiO2膜を前記第一の制御範囲および前記第三の制御範囲でエッチングし、
前記Poly−Si膜の一部を前記第一の制御範囲および前記第三の制御範囲でエッチングすることを特徴とするプラズマ処理方法。
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JP2012184847A JP5841917B2 (ja) | 2012-08-24 | 2012-08-24 | プラズマ処理装置及びプラズマ処理方法 |
TW102101095A TWI478204B (zh) | 2012-08-24 | 2013-01-11 | Plasma processing device and plasma processing method |
US13/743,367 US20140057445A1 (en) | 2012-08-24 | 2013-01-17 | Plasma processing apparatus and plasma processing method |
KR20130006127A KR101479639B1 (ko) | 2012-08-24 | 2013-01-18 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
CN201310018419.5A CN103632914B (zh) | 2012-08-24 | 2013-01-18 | 等离子体处理装置以及等离子体处理方法 |
US15/284,668 US10727088B2 (en) | 2012-08-24 | 2016-10-04 | Plasma processing apparatus and plasma processing method |
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KR101503258B1 (ko) * | 2014-11-14 | 2015-03-17 | (주) 일하하이텍 | 플라즈마를 이용한 기판 처리 방법 |
JP6491888B2 (ja) * | 2015-01-19 | 2019-03-27 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法およびプラズマ処理装置 |
JP6670697B2 (ja) * | 2016-04-28 | 2020-03-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US10424467B2 (en) * | 2017-03-13 | 2019-09-24 | Applied Materials, Inc. | Smart RF pulsing tuning using variable frequency generators |
JP7061922B2 (ja) * | 2018-04-27 | 2022-05-02 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
CN108566717A (zh) * | 2018-06-29 | 2018-09-21 | 合肥中科离子医学技术装备有限公司 | 采用微波垂直注入激励等离子体发生装置 |
US11424105B2 (en) * | 2019-08-05 | 2022-08-23 | Hitachi High-Tech Corporation | Plasma processing apparatus |
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JP3286951B2 (ja) * | 1993-07-16 | 2002-05-27 | 株式会社アルバック | プラズマcvd成膜方法と装置 |
EP0653501B1 (en) * | 1993-11-11 | 1998-02-04 | Nissin Electric Company, Limited | Plasma-CVD method and apparatus |
JPH08250479A (ja) * | 1995-03-15 | 1996-09-27 | Hitachi Ltd | 表面処理方法及び表面処理装置 |
CN1299226C (zh) * | 1997-09-17 | 2007-02-07 | 东京电子株式会社 | 用于监视和控制气体等离子体处理的系统和方法 |
KR100521120B1 (ko) * | 1998-02-13 | 2005-10-12 | 가부시끼가이샤 히다치 세이사꾸쇼 | 반도체소자의 표면처리방법 및 장치 |
JP2001085394A (ja) | 1999-09-10 | 2001-03-30 | Hitachi Ltd | 表面処理方法および表面処理装置 |
JP4414518B2 (ja) * | 1999-09-10 | 2010-02-10 | 株式会社日立製作所 | 表面処理装置 |
US20020123237A1 (en) * | 2001-03-05 | 2002-09-05 | Tue Nguyen | Plasma pulse semiconductor processing system and method |
US7078351B2 (en) * | 2003-02-10 | 2006-07-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist intensive patterning and processing |
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US20050112891A1 (en) | 2003-10-21 | 2005-05-26 | David Johnson | Notch-free etching of high aspect SOI structures using a time division multiplex process and RF bias modulation |
JP2005130198A (ja) | 2003-10-23 | 2005-05-19 | Ulvac Japan Ltd | 高周波装置 |
JP2005214932A (ja) * | 2004-02-02 | 2005-08-11 | Daihen Corp | 信号処理装置、この信号処理装置を用いた電圧測定装置及び電流測定装置 |
JP4920991B2 (ja) * | 2006-02-22 | 2012-04-18 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
JP2011525682A (ja) * | 2008-05-14 | 2011-09-22 | アプライド マテリアルズ インコーポレイテッド | Rf電力供給のための時間分解チューニングスキームを利用したパルス化プラズマ処理の方法及び装置 |
KR101489326B1 (ko) * | 2008-09-09 | 2015-02-11 | 삼성전자주식회사 | 기판의 처리 방법 |
JP5377993B2 (ja) * | 2009-01-30 | 2013-12-25 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
US8383001B2 (en) * | 2009-02-20 | 2013-02-26 | Tokyo Electron Limited | Plasma etching method, plasma etching apparatus and storage medium |
JP5977509B2 (ja) * | 2011-12-09 | 2016-08-24 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
US9070998B2 (en) * | 2012-07-27 | 2015-06-30 | Amphenol Corporation | High speed electrical contact assembly |
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KR20140026234A (ko) | 2014-03-05 |
CN103632914A (zh) | 2014-03-12 |
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TWI478204B (zh) | 2015-03-21 |
US20140057445A1 (en) | 2014-02-27 |
US10727088B2 (en) | 2020-07-28 |
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