JP2014041946A - 半導体装置の製造方法および半導体装置 - Google Patents
半導体装置の製造方法および半導体装置 Download PDFInfo
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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- H01L21/76855—After-treatment introducing at least one additional element into the layer
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- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
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- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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Abstract
【構成】実施形態の半導体装置の製造方法は、基板上に絶縁膜を形成する工程と、前記絶縁膜に開口部を形成する工程と、前記開口部の側壁及び底面に高融点金属膜を形成する工程と、前記高融点金属膜上に、銅(Cu)によるシード膜を形成する工程と、前記シード膜が形成された後、窒化処理を行う工程と、窒化処理後に、前記シード膜に通電しながら、前記開口部をCu膜で埋め込む電解めっき処理を行う工程と、を備えたことを特徴とする。
【選択図】図1
Description
第1の実施形態について、以下、図面を用いて説明する。
Claims (5)
- 基板上に絶縁膜を形成する工程と、
前記絶縁膜に開口部を形成する工程と、
前記開口部の側壁及び底面に高融点金属膜を形成する工程と、
前記高融点金属膜上に、銅(Cu)によるシード膜を形成する工程と、
前記シード膜が形成された後、窒化処理を行う工程と、
窒化処理後に、前記シード膜に通電しながら、前記開口部をCu膜で埋め込む電解めっき処理を行う工程と、
を備え、
前記高融点金属膜として、チタン(Ti)を用い、
前記窒化処理として、アンモニア(NH3)プラズマ処理と窒素(N2)プラズマ処理とのいずれかを行うことを特徴とする半導体装置の製造方法。 - 基板上に絶縁膜を形成する工程と、
前記絶縁膜に開口部を形成する工程と、
前記開口部の側壁及び底面に高融点金属膜を形成する工程と、
前記高融点金属膜上に、銅(Cu)によるシード膜を形成する工程と、
前記シード膜が形成された後、窒化処理を行う工程と、
窒化処理後に、前記シード膜に通電しながら、前記開口部をCu膜で埋め込む電解めっき処理を行う工程と、
を備えたことを特徴とする半導体装置の製造方法。 - 前記高融点金属膜として、チタン(Ti)を用いることを特徴とする請求項2記載の半導体装置の製造方法。
- 前記高融点金属膜として、タンタル(Ta)を用いることを特徴とする請求項2記載の半導体装置の製造方法。
- 銅(Cu)配線と、
前記Cu配線の側面および底面を覆うように形成された高融点金属膜と、
前記Cu配線の側面および底面の接続部近傍に、前記Cu配線および前記高融点金属膜に挟まれるように局所的に形成された前記高融点金属膜の窒化膜と、
前記高融点金属膜の側面側に形成された絶縁膜と、
を備えたことを特徴とする半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2012183936A JP5823359B2 (ja) | 2012-08-23 | 2012-08-23 | 半導体装置の製造方法 |
US13/768,178 US8878364B2 (en) | 2012-08-23 | 2013-02-15 | Method for fabricating semiconductor device and semiconductor device |
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JP2012183936A JP5823359B2 (ja) | 2012-08-23 | 2012-08-23 | 半導体装置の製造方法 |
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JP2014041946A true JP2014041946A (ja) | 2014-03-06 |
JP5823359B2 JP5823359B2 (ja) | 2015-11-25 |
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JP2012183936A Expired - Fee Related JP5823359B2 (ja) | 2012-08-23 | 2012-08-23 | 半導体装置の製造方法 |
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JP (1) | JP5823359B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6564965B1 (ja) * | 2018-03-28 | 2019-08-21 | 堺ディスプレイプロダクト株式会社 | 有機el表示装置及びその製造方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6241641B2 (ja) * | 2013-03-28 | 2017-12-06 | 日立化成株式会社 | 多層配線基板の製造方法 |
US9779987B2 (en) | 2014-06-25 | 2017-10-03 | Globalfoundries Inc. | Titanium silicide formation in a narrow source-drain contact |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH1116906A (ja) * | 1997-06-27 | 1999-01-22 | Sony Corp | 半導体装置及びその製造方法 |
JP2000208627A (ja) * | 1999-01-19 | 2000-07-28 | Hitachi Ltd | 半導体装置の製造方法 |
JP2004063556A (ja) * | 2002-07-25 | 2004-02-26 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP2004342750A (ja) * | 2003-05-14 | 2004-12-02 | Toshiba Corp | 電子デバイスの製造方法 |
US20090261477A1 (en) * | 2006-12-27 | 2009-10-22 | Ji-Ho Hong | Semiconductor device and method of manufacturing the same |
JP2010192467A (ja) * | 2007-06-28 | 2010-09-02 | Tokyo Electron Ltd | 被処理体の成膜方法及び処理システム |
JP2011199021A (ja) * | 2010-03-19 | 2011-10-06 | Renesas Electronics Corp | 半導体装置及びその製造方法 |
Family Cites Families (4)
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US6451388B1 (en) * | 1997-12-24 | 2002-09-17 | Tokyo Electron Limited | Method of forming titanium film by chemical vapor deposition |
US6146993A (en) * | 1998-11-23 | 2000-11-14 | Advanced Micro Devices, Inc. | Method for forming in-situ implanted semiconductor barrier layers |
JP2001274160A (ja) | 2000-03-24 | 2001-10-05 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
TW200814156A (en) | 2006-07-21 | 2008-03-16 | Toshiba Kk | Method for manufacturing semiconductor device and semiconductor device |
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2012
- 2012-08-23 JP JP2012183936A patent/JP5823359B2/ja not_active Expired - Fee Related
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2013
- 2013-02-15 US US13/768,178 patent/US8878364B2/en not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1116906A (ja) * | 1997-06-27 | 1999-01-22 | Sony Corp | 半導体装置及びその製造方法 |
JP2000208627A (ja) * | 1999-01-19 | 2000-07-28 | Hitachi Ltd | 半導体装置の製造方法 |
JP2004063556A (ja) * | 2002-07-25 | 2004-02-26 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP2004342750A (ja) * | 2003-05-14 | 2004-12-02 | Toshiba Corp | 電子デバイスの製造方法 |
US20090261477A1 (en) * | 2006-12-27 | 2009-10-22 | Ji-Ho Hong | Semiconductor device and method of manufacturing the same |
JP2010192467A (ja) * | 2007-06-28 | 2010-09-02 | Tokyo Electron Ltd | 被処理体の成膜方法及び処理システム |
JP2011199021A (ja) * | 2010-03-19 | 2011-10-06 | Renesas Electronics Corp | 半導体装置及びその製造方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6564965B1 (ja) * | 2018-03-28 | 2019-08-21 | 堺ディスプレイプロダクト株式会社 | 有機el表示装置及びその製造方法 |
WO2019186810A1 (ja) * | 2018-03-28 | 2019-10-03 | 堺ディスプレイプロダクト株式会社 | 有機el表示装置及びその製造方法 |
US10997906B2 (en) | 2018-03-28 | 2021-05-04 | Sakai Display Products Corporation | Organic EL display apparatus with reduced surface roughness and electrode having silver and ITO and manufacturing method therefor |
US11195457B2 (en) | 2018-03-28 | 2021-12-07 | Sakai Display Products Corporation | Organic EL display device with reduced surface roughness and manufacturing method therefor |
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US8878364B2 (en) | 2014-11-04 |
US20140054782A1 (en) | 2014-02-27 |
JP5823359B2 (ja) | 2015-11-25 |
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