JP2014033200A - バイアス温度不安定性（ｂｔｉ）を低減したデバイス - Google Patents

バイアス温度不安定性（ｂｔｉ）を低減したデバイス Download PDF

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Publication number
JP2014033200A
JP2014033200A JP2013158388A JP2013158388A JP2014033200A JP 2014033200 A JP2014033200 A JP 2014033200A JP 2013158388 A JP2013158388 A JP 2013158388A JP 2013158388 A JP2013158388 A JP 2013158388A JP 2014033200 A JP2014033200 A JP 2014033200A
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JP
Japan
Prior art keywords
semiconductor device
metal
source electrode
mosfet
type
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Pending
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JP2013158388A
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English (en)
Japanese (ja)
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JP2014033200A5 (enExample
Inventor
Joseph Darryl Michael
ジョセフ・ダリル・マイケル
Stephen D Arthur
スティーブン・デイリー・アーサー
Lynn Johnson Tammy
タミー・リン・ジョンソン
Alan Lilienfeld David
デイヴィッド・アラン・リリエンフェルド
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General Electric Co
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General Electric Co
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Application filed by General Electric Co filed Critical General Electric Co
Publication of JP2014033200A publication Critical patent/JP2014033200A/ja
Publication of JP2014033200A5 publication Critical patent/JP2014033200A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
    • H01L21/0485—Ohmic electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
JP2013158388A 2012-08-06 2013-07-31 バイアス温度不安定性（ｂｔｉ）を低減したデバイス Pending JP2014033200A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/567,791 2012-08-06
US13/567,791 US9257283B2 (en) 2012-08-06 2012-08-06 Device having reduced bias temperature instability (BTI)

Publications (2)

Publication Number Publication Date
JP2014033200A true JP2014033200A (ja) 2014-02-20
JP2014033200A5 JP2014033200A5 (enExample) 2016-09-08

Family

ID=48948276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013158388A Pending JP2014033200A (ja) 2012-08-06 2013-07-31 バイアス温度不安定性（ｂｔｉ）を低減したデバイス

Country Status (6)

Country Link
US (1) US9257283B2 (enExample)
EP (1) EP2696366B1 (enExample)
JP (1) JP2014033200A (enExample)
CN (1) CN103578933B (enExample)
BR (1) BR102013019891B1 (enExample)
CA (1) CA2822663C (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016213414A (ja) * 2015-05-13 2016-12-15 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2017168680A (ja) * 2016-03-16 2017-09-21 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP2017168602A (ja) * 2016-03-15 2017-09-21 富士電機株式会社 半導体装置および半導体装置の製造方法
US10879386B2 (en) 2017-12-25 2020-12-29 Fuji Electric Co., Ltd. Semiconductor device and method of manufacturing a semiconductor device
JP2023531486A (ja) * 2020-09-02 2023-07-24 長江存儲科技有限責任公司 エクスタッキングアーキテクチャ用の電極出力構造

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10367089B2 (en) 2011-03-28 2019-07-30 General Electric Company Semiconductor device and method for reduced bias threshold instability
US9576868B2 (en) * 2012-07-30 2017-02-21 General Electric Company Semiconductor device and method for reduced bias temperature instability (BTI) in silicon carbide devices
WO2014156791A1 (ja) * 2013-03-29 2014-10-02 富士電機株式会社 半導体装置および半導体装置の製造方法
US9035395B2 (en) 2013-04-04 2015-05-19 Monolith Semiconductor, Inc. Semiconductor devices comprising getter layers and methods of making and using the same
US9425153B2 (en) 2013-04-04 2016-08-23 Monolith Semiconductor Inc. Semiconductor devices comprising getter layers and methods of making and using the same
US8994118B2 (en) 2013-04-04 2015-03-31 Monolith Semiconductor, Inc. Semiconductor devices comprising getter layers and methods of making and using the same

Citations (5)

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JP2001332566A (ja) * 2000-05-24 2001-11-30 Toyota Motor Corp 半導体装置及びその製造方法
WO2007108439A1 (ja) * 2006-03-22 2007-09-27 Mitsubishi Electric Corporation 電力用半導体装置
JP2008311260A (ja) * 2007-06-12 2008-12-25 Panasonic Corp 半導体装置の製造方法
JP2009146997A (ja) * 2007-12-12 2009-07-02 Sumitomo Electric Ind Ltd 半導体装置の製造方法および半導体装置
JP2011119693A (ja) * 2009-11-06 2011-06-16 Semiconductor Energy Lab Co Ltd 半導体装置

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US5705830A (en) 1996-09-05 1998-01-06 Northrop Grumman Corporation Static induction transistors
US6759683B1 (en) 2001-08-27 2004-07-06 The United States Of America As Represented By The Secretary Of The Army Formulation and fabrication of an improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications
JP3559971B2 (ja) * 2001-12-11 2004-09-02 日産自動車株式会社 炭化珪素半導体装置およびその製造方法
US6544853B1 (en) 2002-01-18 2003-04-08 Infineon Technologies Ag Reduction of negative bias temperature instability using fluorine implantation
JP4340040B2 (ja) 2002-03-28 2009-10-07 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP4405412B2 (ja) * 2005-03-02 2010-01-27 株式会社東芝 半導体集積回路
US7211679B2 (en) * 2005-03-09 2007-05-01 3M Innovative Properties Company Perfluoroether acyl oligothiophene compounds
JP2006269673A (ja) 2005-03-23 2006-10-05 Nec Electronics Corp 半導体装置およびその製造方法
JP2007096263A (ja) 2005-08-31 2007-04-12 Denso Corp 炭化珪素半導体装置およびその製造方法。
US7727904B2 (en) 2005-09-16 2010-06-01 Cree, Inc. Methods of forming SiC MOSFETs with high inversion layer mobility
US7598567B2 (en) * 2006-11-03 2009-10-06 Cree, Inc. Power switching semiconductor devices including rectifying junction-shunts
JP2007201490A (ja) 2007-03-12 2007-08-09 Fujitsu Ltd 半導体装置
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CN101548387B (zh) * 2007-08-07 2012-03-21 松下电器产业株式会社 碳化硅半导体元件及其制造方法
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DE112009000535B4 (de) * 2008-03-07 2013-08-01 Mitsubishi Electric Corp. Siliziumkarbid-Halbleitervorrichtung und Verfahren zu deren Herstellung
US7947588B2 (en) 2008-08-26 2011-05-24 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for a CMOS device with doped conducting metal oxide as the gate electrode
US8735906B2 (en) * 2009-04-13 2014-05-27 Rohm Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
JP6008377B2 (ja) 2010-03-03 2016-10-19 ルネサスエレクトロニクス株式会社 Ｐチャネル型パワーｍｏｓｆｅｔ
JP5777455B2 (ja) * 2011-09-08 2015-09-09 株式会社東芝 半導体装置および半導体装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001332566A (ja) * 2000-05-24 2001-11-30 Toyota Motor Corp 半導体装置及びその製造方法
WO2007108439A1 (ja) * 2006-03-22 2007-09-27 Mitsubishi Electric Corporation 電力用半導体装置
JP2008311260A (ja) * 2007-06-12 2008-12-25 Panasonic Corp 半導体装置の製造方法
JP2009146997A (ja) * 2007-12-12 2009-07-02 Sumitomo Electric Ind Ltd 半導体装置の製造方法および半導体装置
JP2011119693A (ja) * 2009-11-06 2011-06-16 Semiconductor Energy Lab Co Ltd 半導体装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016213414A (ja) * 2015-05-13 2016-12-15 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2017168602A (ja) * 2016-03-15 2017-09-21 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2017168680A (ja) * 2016-03-16 2017-09-21 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
US10879386B2 (en) 2017-12-25 2020-12-29 Fuji Electric Co., Ltd. Semiconductor device and method of manufacturing a semiconductor device
JP2023531486A (ja) * 2020-09-02 2023-07-24 長江存儲科技有限責任公司 エクスタッキングアーキテクチャ用の電極出力構造
JP7636445B2 (ja) 2020-09-02 2025-02-26 長江存儲科技有限責任公司 エクスタッキングアーキテクチャ用の電極出力構造

Also Published As

Publication number Publication date
US20140034963A1 (en) 2014-02-06
BR102013019891A8 (pt) 2015-12-08
BR102013019891B1 (pt) 2020-12-01
EP2696366A2 (en) 2014-02-12
EP2696366A3 (en) 2014-11-12
US9257283B2 (en) 2016-02-09
CN103578933A (zh) 2014-02-12
EP2696366B1 (en) 2018-06-27
CA2822663A1 (en) 2014-02-06
BR102013019891A2 (pt) 2015-11-10
CA2822663C (en) 2020-09-01
CN103578933B (zh) 2018-03-30

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