BR102013019891B1 - dispositivo de transistor de efeito de campo de óxido de metal (mosfet) - Google Patents

dispositivo de transistor de efeito de campo de óxido de metal (mosfet) Download PDF

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Publication number
BR102013019891B1
BR102013019891B1 BR102013019891-9A BR102013019891A BR102013019891B1 BR 102013019891 B1 BR102013019891 B1 BR 102013019891B1 BR 102013019891 A BR102013019891 A BR 102013019891A BR 102013019891 B1 BR102013019891 B1 BR 102013019891B1
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BR
Brazil
Prior art keywords
mosfet
region
electrode
type
source
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Application number
BR102013019891-9A
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English (en)
Portuguese (pt)
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BR102013019891A8 (pt
BR102013019891A2 (pt
Inventor
Joseph Darryl Michael
David Alan Lilienfeld
Stephen Daley Arthur
Tammy Lynn Johnson
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General Electric Company
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Application filed by General Electric Company filed Critical General Electric Company
Publication of BR102013019891A2 publication Critical patent/BR102013019891A2/pt
Publication of BR102013019891A8 publication Critical patent/BR102013019891A8/pt
Publication of BR102013019891B1 publication Critical patent/BR102013019891B1/pt

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0115—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors to silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Formation Of Insulating Films (AREA)
BR102013019891-9A 2012-08-06 2013-08-05 dispositivo de transistor de efeito de campo de óxido de metal (mosfet) BR102013019891B1 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/567,791 US9257283B2 (en) 2012-08-06 2012-08-06 Device having reduced bias temperature instability (BTI)
US13/567,791 2012-08-06

Publications (3)

Publication Number Publication Date
BR102013019891A2 BR102013019891A2 (pt) 2015-11-10
BR102013019891A8 BR102013019891A8 (pt) 2015-12-08
BR102013019891B1 true BR102013019891B1 (pt) 2020-12-01

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BR102013019891-9A BR102013019891B1 (pt) 2012-08-06 2013-08-05 dispositivo de transistor de efeito de campo de óxido de metal (mosfet)

Country Status (6)

Country Link
US (1) US9257283B2 (enExample)
EP (1) EP2696366B1 (enExample)
JP (1) JP2014033200A (enExample)
CN (1) CN103578933B (enExample)
BR (1) BR102013019891B1 (enExample)
CA (1) CA2822663C (enExample)

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US10367089B2 (en) 2011-03-28 2019-07-30 General Electric Company Semiconductor device and method for reduced bias threshold instability
US9576868B2 (en) * 2012-07-30 2017-02-21 General Electric Company Semiconductor device and method for reduced bias temperature instability (BTI) in silicon carbide devices
JP6480860B2 (ja) * 2013-03-29 2019-03-13 富士電機株式会社 半導体装置および半導体装置の製造方法
US8994118B2 (en) 2013-04-04 2015-03-31 Monolith Semiconductor, Inc. Semiconductor devices comprising getter layers and methods of making and using the same
US9425153B2 (en) 2013-04-04 2016-08-23 Monolith Semiconductor Inc. Semiconductor devices comprising getter layers and methods of making and using the same
US9035395B2 (en) 2013-04-04 2015-05-19 Monolith Semiconductor, Inc. Semiconductor devices comprising getter layers and methods of making and using the same
JP6582537B2 (ja) * 2015-05-13 2019-10-02 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2017168602A (ja) * 2016-03-15 2017-09-21 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6772495B2 (ja) * 2016-03-16 2020-10-21 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP7062946B2 (ja) 2017-12-25 2022-05-09 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2022047649A1 (en) * 2020-09-02 2022-03-10 Yangtze Memory Technologies Co., Ltd. Pad-out structure for xtacking architecture

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Also Published As

Publication number Publication date
CN103578933B (zh) 2018-03-30
JP2014033200A (ja) 2014-02-20
CA2822663C (en) 2020-09-01
US9257283B2 (en) 2016-02-09
EP2696366A3 (en) 2014-11-12
CA2822663A1 (en) 2014-02-06
BR102013019891A8 (pt) 2015-12-08
US20140034963A1 (en) 2014-02-06
EP2696366A2 (en) 2014-02-12
BR102013019891A2 (pt) 2015-11-10
CN103578933A (zh) 2014-02-12
EP2696366B1 (en) 2018-06-27

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B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B06U Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]
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