JP2014003099A - 固体撮像装置およびその製造方法、ならびにカメラ - Google Patents
固体撮像装置およびその製造方法、ならびにカメラ Download PDFInfo
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- 238000003384 imaging method Methods 0.000 title claims abstract description 50
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- 238000005530 etching Methods 0.000 claims abstract description 82
- 230000002093 peripheral effect Effects 0.000 claims abstract description 71
- 239000004065 semiconductor Substances 0.000 claims abstract description 60
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 31
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 27
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
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- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
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- 229910052759 nickel Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
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- 229910052697 platinum Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】画素領域10と、前記画素領域10の少なくとも一部を取り囲むように配置された周辺回路領域40と、前記画素領域10と前記周辺回路領域40との間に配置された中間領域30とが半導体基板SBに配された固体撮像装置の製造方法において、周辺回路領域40の活性領域および前記中間領域30の活性領域に高融点金属化合物109、112、114を形成する工程と、高融点金属化合物109、112、114の上にエッチングストップ膜116を形成する工程を含む。
【選択図】図14
Description
Claims (12)
- 画素領域と、前記画素領域の少なくとも一部を取り囲むように配置された周辺回路領域と、前記画素領域と前記周辺回路領域との間に配置された中間領域とが半導体基板に配された固体撮像装置の製造方法であって、
前記画素領域の活性領域、前記周辺回路領域の活性領域および前記中間領域の活性領域のうち前記周辺回路領域の活性領域および前記中間領域の活性領域に高融点金属化合物を形成する工程と、
前記周辺回路領域の活性領域に形成された高融点金属化合物および前記中間領域の活性領域に形成された高融点金属化合物の上にエッチングストップ膜を形成する工程と、
前記中間領域の活性領域に形成された高融点金属化合物を前記エッチングストップ膜が覆った状態で前記エッチングストップ膜の上に層間絶縁膜を形成する工程と、
前記画素領域の活性領域、前記周辺回路領域の活性領域および前記中間領域の活性領域のうち前記周辺回路領域の活性領域の前記高融点金属化合物に接触するコンタクトプラグを形成する工程と、を有し、
前記コンタクトプラグを形成する工程は、前記エッチングストップ膜を用いてコンタクトホールを形成する工程を含む、
ことを特徴とする固体撮像装置の製造方法。 - 前記高融点金属化合物がシリサイドであることを特徴とする請求項1に記載の固体撮像装置の製造方法。
- 前記画素領域の光電変換部に光を導く導波路を前記層間絶縁膜に形成する工程を更に有し、
前記エッチングストップ膜は、前記画素領域に、前記導波路の下面に接する領域および前記層間絶縁膜の下面に接する領域を含むパターンを有し、
前記導波路を形成する工程は、前記エッチングストップ膜を用いて導波路開口を形成する工程を含む、
ことを特徴とする請求項1又は2に記載の固体撮像装置の製造方法。 - 前記画素領域の前記導波路の下面に接する領域を除いて前記エッチングストップ膜を除去する工程を有することを特徴とする請求項3に記載の固体撮像装置の製造方法。
- 更に、前記画素領域と前記中間領域との間に、前記画素領域に配されるウエルに基準電圧を供給するためのコンタクト領域が配され、
前記コンタクト領域の上に配された前記エッチングストップ膜を除去する工程を有することを特徴とする請求項1乃至4のいずれか1項に記載の固体撮像装置の製造方法。 - 画素領域と、前記画素領域の周囲に配置された周辺回路領域と、前記画素領域と前記周辺回路領域との間に配置された中間領域とが配された半導体基板を有する固体撮像装置であって、
前記画素領域、前記周辺回路領域および前記中間領域は活性領域を有し、
前記画素領域の活性領域には高融点金属化合物が形成されず、前記周辺回路領域の活性領域および前記中間領域の活性領域には高融点金属化合物が形成され、
前記周辺回路領域の活性領域に形成された高融点金属化合物は、エッチングストップ膜で覆われ、かつ、前記エッチングストップ膜に形成された開口を通してコンタクトプラグが接続され、
前記中間領域の活性領域に形成された高融点金属化合物は、その全体が前記エッチングストップ膜で覆われている、
ことを特徴とする固体撮像装置。 - 前記高融点金属化合物がシリサイドであることを特徴とする請求項6に記載の固体撮像装置。
- 前記周辺回路領域の活性領域に形成された高融点金属化合物と前記エッチングストップ膜との間、および、前記中間領域の活性領域に形成された高融点金属化合物と前記エッチングストップ膜との間に絶縁膜が配置されている、
ことを特徴とする請求項6又は7に記載の固体撮像装置。 - 前記画素領域と前記中間領域との間に、前記画素領域に配置された埋め込み半導体層の電位を固定するためのコンタクトプラグが形成されたコンタクト領域が配置され、
前記コンタクト領域の活性領域には高融点金属化合物が形成されず、
前記コンタクト領域の活性領域は前記エッチングストップ膜で覆われていない、
ことを特徴とする請求項6乃至8のいずれか1項に記載の固体撮像装置。 - 前記エッチングストップ膜の上に層間絶縁膜が配置され、
前記画素領域に配置された光電変換部に光を導くように導波路が形成され、
前記エッチングストップ膜は、前記画素領域に、前記導波路の下面に接する領域および前記層間絶縁膜の下面に接する領域を含むパターンを有する、
ことを特徴とする請求項6乃至9のいずれか1項に記載の固体撮像装置。 - 前記エッチングストップ膜が窒化シリコン膜である、
ことを特徴とする請求項6乃至10のいずれか1項に記載の固体撮像装置。 - 請求項6乃至11のいずれか1項に記載の固体撮像装置と、
前記固体撮像装置から出力される信号を処理する処理部と、
を備えることを特徴とするカメラ。
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US13/911,350 US8809914B2 (en) | 2012-06-15 | 2013-06-06 | Solid-state image sensor, method for manufacturing the same, and camera |
US14/325,806 US9130071B2 (en) | 2012-06-15 | 2014-07-08 | Solid-state image sensor, method for manufacturing the same, and camera |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2015185609A (ja) * | 2014-03-20 | 2015-10-22 | キヤノン株式会社 | 半導体装置の製造方法 |
JP2015233128A (ja) * | 2014-05-12 | 2015-12-24 | キヤノン株式会社 | 固体撮像装置およびその製造方法ならびにカメラ |
JP2019021660A (ja) * | 2017-07-11 | 2019-02-07 | キヤノン株式会社 | 光電変換装置、光電変換装置を備えた機器、光電変換装置の製造方法 |
JP2020098936A (ja) * | 2020-02-18 | 2020-06-25 | キヤノン株式会社 | 光電変換装置、光電変換装置を備えた機器、光電変換装置の製造方法 |
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JP5991739B2 (ja) * | 2012-06-15 | 2016-09-14 | キヤノン株式会社 | 固体撮像装置およびその製造方法、ならびにカメラ |
CN104813473B (zh) * | 2012-10-29 | 2017-12-08 | 瑞萨电子株式会社 | 拍摄装置的制造方法及拍摄装置 |
JP6226683B2 (ja) * | 2013-10-09 | 2017-11-08 | キヤノン株式会社 | 撮像装置 |
JP2016058599A (ja) * | 2014-09-11 | 2016-04-21 | キヤノン株式会社 | 撮像装置の製造方法 |
GB2532728A (en) * | 2014-11-25 | 2016-06-01 | Nokia Technologies Oy | A semiconductor chip, a method, an apparatus and a computer program product for image capturing |
JP6650909B2 (ja) * | 2017-06-20 | 2020-02-19 | キヤノン株式会社 | 撮像装置、撮像システム、移動体、および、撮像装置の製造方法 |
JP2019029448A (ja) | 2017-07-27 | 2019-02-21 | キヤノン株式会社 | 撮像装置、カメラおよび撮像装置の製造方法 |
JP6978893B2 (ja) * | 2017-10-27 | 2021-12-08 | キヤノン株式会社 | 光電変換装置、その製造方法及び機器 |
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US20140313384A1 (en) | 2014-10-23 |
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