JP2013545713A - 単結晶インゴットの直径制御システムおよびこれを含む単結晶インゴットの成長装置 - Google Patents
単結晶インゴットの直径制御システムおよびこれを含む単結晶インゴットの成長装置 Download PDFInfo
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- JP2013545713A JP2013545713A JP2013544374A JP2013544374A JP2013545713A JP 2013545713 A JP2013545713 A JP 2013545713A JP 2013544374 A JP2013544374 A JP 2013544374A JP 2013544374 A JP2013544374 A JP 2013544374A JP 2013545713 A JP2013545713 A JP 2013545713A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
【選択図】図1
Description
また、各構成要素の「上」または「下」に対する基準は、図面を基準として説明する。なお、図面における各構成要素の大きさは、説明の便宜を図り誇張図示される場合もあるが、実際に適用される大きさを意味するものではない。
図1は、実施例に係る単結晶インゴットの直径制御システムを含む単結晶インゴットの成長装置の例示図である。
Claims (6)
- 単結晶インゴットの直径を測定する直径測定センサと、前記直径測定センサからの測定データから短周期ノイズを除去するローパスフィルタと、前記ノイズが除去されたデータを現在データとして、引上速度を制御することで単結晶インゴットの直径を制御するADCセンサと、を含む単結晶インゴットの直径制御システム。
- 前記ローパスフィルタは、前記測定データから短周期ノイズまたはスパイクノイズを除去することを特徴とする請求項1に記載の単結晶インゴットの直径制御システム。
- 前記短周期の範囲は3〜20秒であり、
前記スパイクノイズの周期は0.75〜5秒であることを特徴とする請求項2に記載の単結晶インゴットの直径制御システム。 - 前記ローパスフィルタの時定数τfは1〜15秒であることを特徴とする請求項1に記載の単結晶インゴットの直径制御システム。
- 前記短周期ノイズを除去した後引上速度を制御する時は、データ平均値個数(AVE)を考慮してインゴットの直径を制御することを特徴とする請求項1に記載の単結晶インゴットの直径制御システム。
- 請求項1ないし5のいずれか1項に記載の単結晶インゴットの直径制御システムを含むことを特徴とする単結晶インゴットの成長装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2010-0127061 | 2010-12-13 | ||
KR1020100127061A KR101218847B1 (ko) | 2010-12-13 | 2010-12-13 | 단결정 잉곳 직경 제어시스템 및 이를 포함하는 단결정 잉곳 성장장치 |
PCT/KR2011/005397 WO2012081789A1 (en) | 2010-12-13 | 2011-07-21 | System of controlling diameter of single crystal ingot and single crystal ingot growing apparatus including the same |
Publications (2)
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JP2013545713A true JP2013545713A (ja) | 2013-12-26 |
JP5639719B2 JP5639719B2 (ja) | 2014-12-10 |
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JP2013544374A Active JP5639719B2 (ja) | 2010-12-13 | 2011-07-21 | 単結晶インゴットの直径制御システムおよびこれを含む単結晶インゴットの成長装置 |
Country Status (6)
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US (1) | US9422637B2 (ja) |
JP (1) | JP5639719B2 (ja) |
KR (1) | KR101218847B1 (ja) |
CN (1) | CN103261492A (ja) |
DE (1) | DE112011104351B4 (ja) |
WO (1) | WO2012081789A1 (ja) |
Cited By (1)
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KR20180076570A (ko) * | 2016-12-28 | 2018-07-06 | 경북대학교 산학협력단 | 단결정 잉곳 성장로 공정에서 온도 설계 방법 |
Families Citing this family (10)
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KR101443492B1 (ko) * | 2013-01-24 | 2014-09-22 | 주식회사 엘지실트론 | 잉곳 성장 제어장치 및 이를 구비한 잉곳 성장장치 |
KR101528063B1 (ko) * | 2013-12-09 | 2015-06-10 | 주식회사 엘지실트론 | 잉곳의 직경측정장치, 이를 포함하는 잉곳성장장치 및 잉곳성장방법 |
JP6409718B2 (ja) * | 2014-09-08 | 2018-10-24 | 株式会社Sumco | 単結晶の製造方法 |
KR101674287B1 (ko) * | 2015-01-21 | 2016-11-08 | 주식회사 엘지실트론 | 단결정 잉곳의 직경 제어 시스템 및 제어 방법 |
KR101874712B1 (ko) | 2016-12-07 | 2018-07-04 | 에스케이실트론 주식회사 | 잉곳 성장 제어장치 및 그 제어방법 |
KR101956455B1 (ko) * | 2017-07-12 | 2019-06-24 | 에스케이실트론 주식회사 | 반도체 단결정 제어장치 및 제어방법 |
KR102065837B1 (ko) * | 2018-01-09 | 2020-01-13 | 에스케이실트론 주식회사 | 단결정 잉곳 성장용 온도제어장치 및 이에 적용된 온도제어방법 |
CN113638041B (zh) * | 2021-08-18 | 2022-08-02 | 西安奕斯伟材料科技有限公司 | 晶体生长直径的控制方法、装置、设备及计算机存储介质 |
CN113818075B (zh) * | 2021-09-24 | 2022-09-30 | 西安奕斯伟材料科技有限公司 | 精准调整adc相机的方法、装置、设备及计算机存储介质 |
CN114399489B (zh) * | 2022-01-12 | 2022-11-25 | 苏州天准科技股份有限公司 | 拉晶过程中光圈直径的监测方法、存储介质和终端 |
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JP2004035352A (ja) | 2002-07-05 | 2004-02-05 | Sumitomo Mitsubishi Silicon Corp | シリコン単結晶の引上げ装置 |
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- 2011-07-21 CN CN2011800597233A patent/CN103261492A/zh active Pending
- 2011-07-21 DE DE112011104351.1T patent/DE112011104351B4/de active Active
- 2011-07-21 WO PCT/KR2011/005397 patent/WO2012081789A1/en active Application Filing
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Patent Citations (1)
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JPH04218705A (ja) * | 1990-04-27 | 1992-08-10 | Nkk Corp | シリコン単結晶の直径計測方法及び装置 |
Cited By (2)
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KR20180076570A (ko) * | 2016-12-28 | 2018-07-06 | 경북대학교 산학협력단 | 단결정 잉곳 성장로 공정에서 온도 설계 방법 |
KR101895132B1 (ko) | 2016-12-28 | 2018-09-04 | 경북대학교 산학협력단 | 단결정 잉곳 성장로 공정에서 온도 설계 방법 |
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Publication number | Publication date |
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DE112011104351B4 (de) | 2020-02-20 |
KR101218847B1 (ko) | 2013-01-21 |
KR20120065768A (ko) | 2012-06-21 |
WO2012081789A1 (en) | 2012-06-21 |
CN103261492A (zh) | 2013-08-21 |
US20120145071A1 (en) | 2012-06-14 |
JP5639719B2 (ja) | 2014-12-10 |
US9422637B2 (en) | 2016-08-23 |
DE112011104351T5 (de) | 2013-09-12 |
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