JP2013542153A5 - - Google Patents
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- Publication number
- JP2013542153A5 JP2013542153A5 JP2013506193A JP2013506193A JP2013542153A5 JP 2013542153 A5 JP2013542153 A5 JP 2013542153A5 JP 2013506193 A JP2013506193 A JP 2013506193A JP 2013506193 A JP2013506193 A JP 2013506193A JP 2013542153 A5 JP2013542153 A5 JP 2013542153A5
- Authority
- JP
- Japan
- Prior art keywords
- graphite
- article
- conductive coating
- carbon
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US32646210P | 2010-04-21 | 2010-04-21 | |
| US32647310P | 2010-04-21 | 2010-04-21 | |
| US32646910P | 2010-04-21 | 2010-04-21 | |
| US61/326,462 | 2010-04-21 | ||
| US61/326,473 | 2010-04-21 | ||
| US61/326,469 | 2010-04-21 | ||
| PCT/US2011/032662 WO2011133417A2 (en) | 2010-04-21 | 2011-04-15 | Coated graphite article and reactive ion etch manufacturing and refurbishment of graphite article |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015044895A Division JP2015134716A (ja) | 2010-04-21 | 2015-03-06 | 被覆黒鉛物品、ならびに反応性イオンエッチングによる黒鉛物品の製造および再生 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013542153A JP2013542153A (ja) | 2013-11-21 |
| JP2013542153A5 true JP2013542153A5 (enExample) | 2015-04-23 |
| JP5759534B2 JP5759534B2 (ja) | 2015-08-05 |
Family
ID=44834734
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013506193A Expired - Fee Related JP5759534B2 (ja) | 2010-04-21 | 2011-04-15 | 被覆黒鉛物品、ならびに反応性イオンエッチングによる黒鉛物品の製造および再生 |
| JP2015044895A Withdrawn JP2015134716A (ja) | 2010-04-21 | 2015-03-06 | 被覆黒鉛物品、ならびに反応性イオンエッチングによる黒鉛物品の製造および再生 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015044895A Withdrawn JP2015134716A (ja) | 2010-04-21 | 2015-03-06 | 被覆黒鉛物品、ならびに反応性イオンエッチングによる黒鉛物品の製造および再生 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20130108863A1 (enExample) |
| JP (2) | JP5759534B2 (enExample) |
| KR (1) | KR20130064050A (enExample) |
| CN (1) | CN102918605B (enExample) |
| TW (1) | TWI501285B (enExample) |
| WO (1) | WO2011133417A2 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9384937B2 (en) * | 2013-09-27 | 2016-07-05 | Varian Semiconductor Equipment Associates, Inc. | SiC coating in an ion implanter |
| US10973569B2 (en) * | 2017-09-22 | 2021-04-13 | Covidien Lp | Electrosurgical tissue sealing device with non-stick coating |
| US10689752B2 (en) * | 2017-11-16 | 2020-06-23 | Axcelis Technologies, Inc. | Film stabilization through novel materials modification of beamline components |
| TWI649775B (zh) * | 2018-01-02 | 2019-02-01 | 台灣積體電路製造股份有限公司 | 離子佈植機及離子佈植機腔室的製造方法 |
| CN108715557A (zh) * | 2018-08-30 | 2018-10-30 | 东莞市鸿亿导热材料有限公司 | 具有导电和氧化稳定性涂层的石墨片的制造方法 |
| CN115141036A (zh) * | 2021-03-29 | 2022-10-04 | 翔名科技股份有限公司 | 石墨组件与其制造方法 |
| CN113429224B (zh) * | 2021-05-14 | 2022-10-04 | 中国工程物理研究院材料研究所 | 一种碳材料的表面刻蚀方法 |
| CN114113182A (zh) * | 2021-10-22 | 2022-03-01 | 合肥国轩高科动力能源有限公司 | 一种用于扫描电镜拍摄硅基负极材料的定位处理方法 |
| WO2025013581A1 (ja) * | 2023-07-07 | 2025-01-16 | 東京エレクトロン株式会社 | プラズマ処理方法およびプラズマ処理装置 |
| CN119307879A (zh) * | 2024-10-14 | 2025-01-14 | 湖南德智新材料股份有限公司 | 一种制备碳化硅材料的方法及碳化硅材料 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3925577A (en) * | 1972-11-24 | 1975-12-09 | Westinghouse Electric Corp | Silicon carbide coated graphite members and process for producing the same |
| GB1601427A (en) * | 1977-06-20 | 1981-10-28 | Siemens Ag | Deposition of a layer of electrically-conductive material on a graphite body |
| US4812212A (en) * | 1987-09-08 | 1989-03-14 | Harco Technologies Corporation | Apparatus for cathodically protecting reinforcing members and method for installing same |
| JP2539917B2 (ja) * | 1989-07-10 | 1996-10-02 | セントラル硝子株式会社 | フッ化塩素ガスによる炭素材料のクリ―ニング方法 |
| CN1030338C (zh) * | 1991-05-21 | 1995-11-22 | 北京科技大学 | 一种石墨电极表面形成合金化保护覆层的方法 |
| JPH1045474A (ja) * | 1996-08-01 | 1998-02-17 | Toyo Tanso Kk | 熱分解炭素被覆黒鉛材の製造方法 |
| JP3608770B2 (ja) * | 1998-10-27 | 2005-01-12 | 日清紡績株式会社 | イオン注入機用カーボン部材及びその製造方法 |
| TW556283B (en) * | 2000-05-26 | 2003-10-01 | Nisshin Spinning | Silicon/graphite composite ring for supporting silicon wafer, and dry etching apparatus equipped with the same |
| US6506254B1 (en) * | 2000-06-30 | 2003-01-14 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
| CN1285873C (zh) * | 2001-10-24 | 2006-11-22 | 西北工业大学 | 对石墨坩埚具表面高温复合阻碳涂层进行致密化的方法 |
| JP2004075493A (ja) * | 2002-08-22 | 2004-03-11 | Tokai Carbon Co Ltd | CVD−SiC被覆黒鉛材及びその製造方法 |
| JP2004158226A (ja) * | 2002-11-05 | 2004-06-03 | Toyo Tanso Kk | イオン注入装置用黒鉛材料及びこれを用いたイオン注入装置用黒鉛部材 |
| US20050064247A1 (en) * | 2003-06-25 | 2005-03-24 | Ajit Sane | Composite refractory metal carbide coating on a substrate and method for making thereof |
| CN1232988C (zh) * | 2003-10-24 | 2005-12-21 | 清华大学 | 一种制备核反应堆用石墨表面抗氧化涂层的方法 |
| US7485580B2 (en) * | 2005-09-20 | 2009-02-03 | Air Products And Chemicals, Inc. | Method for removing organic electroluminescent residues from a substrate |
| CN101361158B (zh) * | 2005-12-02 | 2015-04-08 | 卡尔蔡司显微镜有限责任公司 | 离子源、系统和方法 |
| US20070248767A1 (en) * | 2006-04-19 | 2007-10-25 | Asm Japan K.K. | Method of self-cleaning of carbon-based film |
| JP2010503977A (ja) * | 2006-04-26 | 2010-02-04 | アドバンスト テクノロジー マテリアルズ,インコーポレイテッド | 半導体処理システムの洗浄方法 |
| US20090179158A1 (en) * | 2008-01-16 | 2009-07-16 | Varian Semiconductor Equpiment Associate, Inc. | In-vacuum protective liners |
| TWI475594B (zh) * | 2008-05-19 | 2015-03-01 | Entegris Inc | 靜電夾頭 |
| US8721906B2 (en) * | 2008-06-09 | 2014-05-13 | Poco Graphite, Inc. | Method to increase yield and reduce down time in semiconductor fabrication units by preconditioning components using sub-aperture reactive atom etch |
| US8142607B2 (en) * | 2008-08-28 | 2012-03-27 | Varian Semiconductor Equipment Associates, Inc. | High density helicon plasma source for wide ribbon ion beam generation |
| US20100140508A1 (en) * | 2008-12-04 | 2010-06-10 | Blake Julian G | Coated graphite liners |
-
2011
- 2011-04-15 JP JP2013506193A patent/JP5759534B2/ja not_active Expired - Fee Related
- 2011-04-15 US US13/583,316 patent/US20130108863A1/en not_active Abandoned
- 2011-04-15 CN CN201180017162.0A patent/CN102918605B/zh not_active Expired - Fee Related
- 2011-04-15 KR KR1020127027704A patent/KR20130064050A/ko not_active Withdrawn
- 2011-04-15 WO PCT/US2011/032662 patent/WO2011133417A2/en not_active Ceased
- 2011-04-18 TW TW100113348A patent/TWI501285B/zh not_active IP Right Cessation
-
2015
- 2015-03-06 JP JP2015044895A patent/JP2015134716A/ja not_active Withdrawn
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