TWI501285B - 經塗覆之石墨物件及用於製造與整修彼之方法 - Google Patents
經塗覆之石墨物件及用於製造與整修彼之方法 Download PDFInfo
- Publication number
- TWI501285B TWI501285B TW100113348A TW100113348A TWI501285B TW I501285 B TWI501285 B TW I501285B TW 100113348 A TW100113348 A TW 100113348A TW 100113348 A TW100113348 A TW 100113348A TW I501285 B TWI501285 B TW I501285B
- Authority
- TW
- Taiwan
- Prior art keywords
- graphite
- article
- conductive coating
- carbon
- thickness
- Prior art date
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 267
- 239000010439 graphite Substances 0.000 title claims description 211
- 229910002804 graphite Inorganic materials 0.000 title claims description 211
- 238000000034 method Methods 0.000 title claims description 124
- 238000004519 manufacturing process Methods 0.000 title description 11
- 238000000576 coating method Methods 0.000 claims description 159
- 239000011248 coating agent Substances 0.000 claims description 144
- 230000008569 process Effects 0.000 claims description 67
- 238000001020 plasma etching Methods 0.000 claims description 63
- 229910052799 carbon Inorganic materials 0.000 claims description 54
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 48
- 230000005540 biological transmission Effects 0.000 claims description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 28
- 238000005468 ion implantation Methods 0.000 claims description 28
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 25
- 229910052760 oxygen Inorganic materials 0.000 claims description 25
- 239000001301 oxygen Substances 0.000 claims description 25
- 239000002243 precursor Substances 0.000 claims description 25
- 238000012360 testing method Methods 0.000 claims description 25
- 229910052786 argon Inorganic materials 0.000 claims description 24
- 230000003287 optical effect Effects 0.000 claims description 24
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 16
- 239000000126 substance Substances 0.000 claims description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 13
- 239000007858 starting material Substances 0.000 claims description 12
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 10
- 229910052787 antimony Inorganic materials 0.000 claims description 10
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 10
- 229910052785 arsenic Inorganic materials 0.000 claims description 10
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 10
- 229910052698 phosphorus Inorganic materials 0.000 claims description 10
- 239000011574 phosphorus Substances 0.000 claims description 10
- 238000005087 graphitization Methods 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 claims description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 7
- 229910052731 fluorine Inorganic materials 0.000 claims description 7
- 239000011737 fluorine Substances 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 4
- 239000000460 chlorine Substances 0.000 claims description 4
- 229910052801 chlorine Inorganic materials 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 239000002245 particle Substances 0.000 description 34
- 150000002500 ions Chemical class 0.000 description 25
- 238000012545 processing Methods 0.000 description 23
- 238000004140 cleaning Methods 0.000 description 18
- 239000000523 sample Substances 0.000 description 15
- 238000001878 scanning electron micrograph Methods 0.000 description 13
- 238000010884 ion-beam technique Methods 0.000 description 12
- 238000009419 refurbishment Methods 0.000 description 10
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000007943 implant Substances 0.000 description 6
- 238000012423 maintenance Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005422 blasting Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 229910003481 amorphous carbon Inorganic materials 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 239000007770 graphite material Substances 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000012799 electrically-conductive coating Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000003449 preventive effect Effects 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 239000003610 charcoal Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000002045 lasting effect Effects 0.000 description 2
- 239000002061 nanopillar Substances 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000007670 refining Methods 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- 230000004580 weight loss Effects 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- IGMQLTZGGAHFBP-UHFFFAOYSA-N [C].[La] Chemical compound [C].[La] IGMQLTZGGAHFBP-UHFFFAOYSA-N 0.000 description 1
- CKUAXEQHGKSLHN-UHFFFAOYSA-N [C].[N] Chemical compound [C].[N] CKUAXEQHGKSLHN-UHFFFAOYSA-N 0.000 description 1
- QHNLFTCGOUAGOG-UHFFFAOYSA-N [C].[N].[Ce] Chemical compound [C].[N].[Ce] QHNLFTCGOUAGOG-UHFFFAOYSA-N 0.000 description 1
- VQYPKWOGIPDGPN-UHFFFAOYSA-N [C].[Ta] Chemical compound [C].[Ta] VQYPKWOGIPDGPN-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 235000011089 carbon dioxide Nutrition 0.000 description 1
- 239000007833 carbon precursor Substances 0.000 description 1
- -1 cerium-oxygen-carbon Chemical compound 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 235000011194 food seasoning agent Nutrition 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000009021 linear effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000000424 optical density measurement Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/16—Vessels; Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
- Physical Vapour Deposition (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US32646910P | 2010-04-21 | 2010-04-21 | |
| US32646210P | 2010-04-21 | 2010-04-21 | |
| US32647310P | 2010-04-21 | 2010-04-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201145344A TW201145344A (en) | 2011-12-16 |
| TWI501285B true TWI501285B (zh) | 2015-09-21 |
Family
ID=44834734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100113348A TWI501285B (zh) | 2010-04-21 | 2011-04-18 | 經塗覆之石墨物件及用於製造與整修彼之方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20130108863A1 (enExample) |
| JP (2) | JP5759534B2 (enExample) |
| KR (1) | KR20130064050A (enExample) |
| CN (1) | CN102918605B (enExample) |
| TW (1) | TWI501285B (enExample) |
| WO (1) | WO2011133417A2 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9384937B2 (en) * | 2013-09-27 | 2016-07-05 | Varian Semiconductor Equipment Associates, Inc. | SiC coating in an ion implanter |
| US11432869B2 (en) * | 2017-09-22 | 2022-09-06 | Covidien Lp | Method for coating electrosurgical tissue sealing device with non-stick coating |
| US10689752B2 (en) * | 2017-11-16 | 2020-06-23 | Axcelis Technologies, Inc. | Film stabilization through novel materials modification of beamline components |
| TWI649775B (zh) * | 2018-01-02 | 2019-02-01 | 台灣積體電路製造股份有限公司 | 離子佈植機及離子佈植機腔室的製造方法 |
| CN108715557A (zh) * | 2018-08-30 | 2018-10-30 | 东莞市鸿亿导热材料有限公司 | 具有导电和氧化稳定性涂层的石墨片的制造方法 |
| CN218025871U (zh) * | 2021-03-29 | 2022-12-13 | 翔名科技股份有限公司 | 石墨组件 |
| CN113429224B (zh) * | 2021-05-14 | 2022-10-04 | 中国工程物理研究院材料研究所 | 一种碳材料的表面刻蚀方法 |
| CN114113182A (zh) * | 2021-10-22 | 2022-03-01 | 合肥国轩高科动力能源有限公司 | 一种用于扫描电镜拍摄硅基负极材料的定位处理方法 |
| WO2025013581A1 (ja) * | 2023-07-07 | 2025-01-16 | 東京エレクトロン株式会社 | プラズマ処理方法およびプラズマ処理装置 |
| CN119307879A (zh) * | 2024-10-14 | 2025-01-14 | 湖南德智新材料股份有限公司 | 一种制备碳化硅材料的方法及碳化硅材料 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1045474A (ja) * | 1996-08-01 | 1998-02-17 | Toyo Tanso Kk | 熱分解炭素被覆黒鉛材の製造方法 |
| CN1414330A (zh) * | 2001-10-24 | 2003-04-30 | 西北工业大学 | 一种石墨坩埚具高温复合阻碳涂层 |
| TW556283B (en) * | 2000-05-26 | 2003-10-01 | Nisshin Spinning | Silicon/graphite composite ring for supporting silicon wafer, and dry etching apparatus equipped with the same |
| JP2004075493A (ja) * | 2002-08-22 | 2004-03-11 | Tokai Carbon Co Ltd | ＣＶＤ−ＳｉＣ被覆黒鉛材及びその製造方法 |
| US20050064247A1 (en) * | 2003-06-25 | 2005-03-24 | Ajit Sane | Composite refractory metal carbide coating on a substrate and method for making thereof |
| CN101361158A (zh) * | 2005-12-02 | 2009-02-04 | 阿利斯公司 | 离子源、系统和方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3925577A (en) * | 1972-11-24 | 1975-12-09 | Westinghouse Electric Corp | Silicon carbide coated graphite members and process for producing the same |
| GB1601427A (en) * | 1977-06-20 | 1981-10-28 | Siemens Ag | Deposition of a layer of electrically-conductive material on a graphite body |
| US4812212A (en) * | 1987-09-08 | 1989-03-14 | Harco Technologies Corporation | Apparatus for cathodically protecting reinforcing members and method for installing same |
| JP2539917B2 (ja) * | 1989-07-10 | 1996-10-02 | セントラル硝子株式会社 | フッ化塩素ガスによる炭素材料のクリ―ニング方法 |
| CN1030338C (zh) * | 1991-05-21 | 1995-11-22 | 北京科技大学 | 一种石墨电极表面形成合金化保护覆层的方法 |
| JP3608770B2 (ja) * | 1998-10-27 | 2005-01-12 | 日清紡績株式会社 | イオン注入機用カーボン部材及びその製造方法 |
| US6506254B1 (en) * | 2000-06-30 | 2003-01-14 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
| JP2004158226A (ja) * | 2002-11-05 | 2004-06-03 | Toyo Tanso Kk | イオン注入装置用黒鉛材料及びこれを用いたイオン注入装置用黒鉛部材 |
| CN1232988C (zh) * | 2003-10-24 | 2005-12-21 | 清华大学 | 一种制备核反应堆用石墨表面抗氧化涂层的方法 |
| US7485580B2 (en) * | 2005-09-20 | 2009-02-03 | Air Products And Chemicals, Inc. | Method for removing organic electroluminescent residues from a substrate |
| US20070248767A1 (en) * | 2006-04-19 | 2007-10-25 | Asm Japan K.K. | Method of self-cleaning of carbon-based film |
| EP2021528A4 (en) * | 2006-04-26 | 2011-03-23 | Advanced Tech Materials | CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS |
| US20090179158A1 (en) * | 2008-01-16 | 2009-07-16 | Varian Semiconductor Equpiment Associate, Inc. | In-vacuum protective liners |
| TWI475594B (zh) * | 2008-05-19 | 2015-03-01 | Entegris Inc | 靜電夾頭 |
| US8721906B2 (en) * | 2008-06-09 | 2014-05-13 | Poco Graphite, Inc. | Method to increase yield and reduce down time in semiconductor fabrication units by preconditioning components using sub-aperture reactive atom etch |
| US8142607B2 (en) * | 2008-08-28 | 2012-03-27 | Varian Semiconductor Equipment Associates, Inc. | High density helicon plasma source for wide ribbon ion beam generation |
| US20100140508A1 (en) * | 2008-12-04 | 2010-06-10 | Blake Julian G | Coated graphite liners |
-
2011
- 2011-04-15 KR KR1020127027704A patent/KR20130064050A/ko not_active Withdrawn
- 2011-04-15 US US13/583,316 patent/US20130108863A1/en not_active Abandoned
- 2011-04-15 WO PCT/US2011/032662 patent/WO2011133417A2/en not_active Ceased
- 2011-04-15 JP JP2013506193A patent/JP5759534B2/ja not_active Expired - Fee Related
- 2011-04-15 CN CN201180017162.0A patent/CN102918605B/zh not_active Expired - Fee Related
- 2011-04-18 TW TW100113348A patent/TWI501285B/zh not_active IP Right Cessation
-
2015
- 2015-03-06 JP JP2015044895A patent/JP2015134716A/ja not_active Withdrawn
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1045474A (ja) * | 1996-08-01 | 1998-02-17 | Toyo Tanso Kk | 熱分解炭素被覆黒鉛材の製造方法 |
| TW556283B (en) * | 2000-05-26 | 2003-10-01 | Nisshin Spinning | Silicon/graphite composite ring for supporting silicon wafer, and dry etching apparatus equipped with the same |
| CN1414330A (zh) * | 2001-10-24 | 2003-04-30 | 西北工业大学 | 一种石墨坩埚具高温复合阻碳涂层 |
| JP2004075493A (ja) * | 2002-08-22 | 2004-03-11 | Tokai Carbon Co Ltd | ＣＶＤ−ＳｉＣ被覆黒鉛材及びその製造方法 |
| US20050064247A1 (en) * | 2003-06-25 | 2005-03-24 | Ajit Sane | Composite refractory metal carbide coating on a substrate and method for making thereof |
| CN101361158A (zh) * | 2005-12-02 | 2009-02-04 | 阿利斯公司 | 离子源、系统和方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5759534B2 (ja) | 2015-08-05 |
| TW201145344A (en) | 2011-12-16 |
| WO2011133417A2 (en) | 2011-10-27 |
| US20130108863A1 (en) | 2013-05-02 |
| JP2013542153A (ja) | 2013-11-21 |
| KR20130064050A (ko) | 2013-06-17 |
| CN102918605B (zh) | 2015-06-17 |
| CN102918605A (zh) | 2013-02-06 |
| WO2011133417A3 (en) | 2012-01-05 |
| JP2015134716A (ja) | 2015-07-27 |
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