JP2013541197A5 - - Google Patents
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- Publication number
- JP2013541197A5 JP2013541197A5 JP2013527562A JP2013527562A JP2013541197A5 JP 2013541197 A5 JP2013541197 A5 JP 2013541197A5 JP 2013527562 A JP2013527562 A JP 2013527562A JP 2013527562 A JP2013527562 A JP 2013527562A JP 2013541197 A5 JP2013541197 A5 JP 2013541197A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- buried layer
- buried
- luminous flux
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 230000004907 flux Effects 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000002513 implantation Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 230000007847 structural defect Effects 0.000 claims 1
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 238000007373 indentation Methods 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1057211A FR2964788B1 (fr) | 2010-09-10 | 2010-09-10 | Procédé de traitement d'un substrat au moyen d'un flux lumineux de longueur d'onde déterminée, et substrat correspondant |
| PCT/EP2011/065259 WO2012031998A1 (en) | 2010-09-10 | 2011-09-05 | Process for treating a substrate using a luminous flux of determined wavelength, and corresponding substrate |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013541197A JP2013541197A (ja) | 2013-11-07 |
| JP2013541197A5 true JP2013541197A5 (enExample) | 2016-01-07 |
| JP5952281B2 JP5952281B2 (ja) | 2016-07-13 |
Family
ID=43920828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013527562A Expired - Fee Related JP5952281B2 (ja) | 2010-09-10 | 2011-09-20 | 特定波長の光束を用いて基板を処理する方法および対応する基板 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US9190314B2 (enExample) |
| EP (1) | EP2614519B1 (enExample) |
| JP (1) | JP5952281B2 (enExample) |
| KR (1) | KR101918166B1 (enExample) |
| CN (1) | CN103201825A (enExample) |
| FR (1) | FR2964788B1 (enExample) |
| WO (1) | WO2012031998A1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2964788B1 (fr) | 2010-09-10 | 2015-05-15 | Soitec Silicon On Insulator | Procédé de traitement d'un substrat au moyen d'un flux lumineux de longueur d'onde déterminée, et substrat correspondant |
| FR2978600B1 (fr) | 2011-07-25 | 2014-02-07 | Soitec Silicon On Insulator | Procede et dispositif de fabrication de couche de materiau semi-conducteur |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR757986A (fr) | 1932-07-04 | 1934-01-05 | Thomson Houston Comp Francaise | Perfectionnements aux tubes électroniques et à leurs circuits |
| US4234356A (en) * | 1979-06-01 | 1980-11-18 | Bell Telephone Laboratories, Incorporated | Dual wavelength optical annealing of materials |
| US4456490A (en) * | 1983-03-09 | 1984-06-26 | Westinghouse Electric Corp. | Laser annealing of MIS devices by back surface laser treatment |
| JP2008135436A (ja) * | 2006-11-27 | 2008-06-12 | Seiko Epson Corp | 剥離方法、半導体デバイス及び電子機器 |
| JP5286684B2 (ja) * | 2007-03-28 | 2013-09-11 | セイコーエプソン株式会社 | 薄膜層の剥離方法、薄膜デバイスの転写方法 |
| FR2921752B1 (fr) * | 2007-10-01 | 2009-11-13 | Aplinov | Procede de chauffage d'une plaque par un flux lumineux. |
| FR2938116B1 (fr) * | 2008-11-04 | 2011-03-11 | Aplinov | Procede et dispositif de chauffage d'une couche d'une plaque par amorcage et flux lumineux. |
| FR2964788B1 (fr) | 2010-09-10 | 2015-05-15 | Soitec Silicon On Insulator | Procédé de traitement d'un substrat au moyen d'un flux lumineux de longueur d'onde déterminée, et substrat correspondant |
-
2010
- 2010-09-10 FR FR1057211A patent/FR2964788B1/fr not_active Expired - Fee Related
-
2011
- 2011-09-05 WO PCT/EP2011/065259 patent/WO2012031998A1/en not_active Ceased
- 2011-09-05 US US13/818,235 patent/US9190314B2/en not_active Expired - Fee Related
- 2011-09-05 EP EP11751609.6A patent/EP2614519B1/en not_active Not-in-force
- 2011-09-05 CN CN2011800433924A patent/CN103201825A/zh active Pending
- 2011-09-20 JP JP2013527562A patent/JP5952281B2/ja not_active Expired - Fee Related
- 2011-09-20 KR KR1020137005906A patent/KR101918166B1/ko not_active Expired - Fee Related
-
2015
- 2015-11-04 US US14/932,349 patent/US9564496B2/en not_active Expired - Fee Related
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