JP2013539806A - 明確なチオフェン単量体含有量を持つポリチオフェンを含む分散液 - Google Patents
明確なチオフェン単量体含有量を持つポリチオフェンを含む分散液 Download PDFInfo
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- JP2013539806A JP2013539806A JP2013533117A JP2013533117A JP2013539806A JP 2013539806 A JP2013539806 A JP 2013539806A JP 2013533117 A JP2013533117 A JP 2013533117A JP 2013533117 A JP2013533117 A JP 2013533117A JP 2013539806 A JP2013539806 A JP 2013539806A
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- composition
- thiophene monomer
- polythiophene
- ppm
- layer
- Prior art date
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- 229930192474 thiophene Natural products 0.000 title claims abstract description 55
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- 238000004519 manufacturing process Methods 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 26
- 230000001590 oxidative effect Effects 0.000 claims abstract description 20
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- 238000010276 construction Methods 0.000 claims abstract description 5
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- 239000000758 substrate Substances 0.000 claims description 29
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- 150000002500 ions Chemical class 0.000 claims description 13
- 238000002834 transmittance Methods 0.000 claims description 10
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical group O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 claims description 9
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- 230000014509 gene expression Effects 0.000 description 3
- RUTXIHLAWFEWGM-UHFFFAOYSA-H iron(3+) sulfate Chemical compound [Fe+3].[Fe+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O RUTXIHLAWFEWGM-UHFFFAOYSA-H 0.000 description 3
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- 125000001424 substituent group Chemical group 0.000 description 3
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- OZJPLYNZGCXSJM-UHFFFAOYSA-N 5-valerolactone Chemical compound O=C1CCCCO1 OZJPLYNZGCXSJM-UHFFFAOYSA-N 0.000 description 2
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- 125000000640 cyclooctyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 150000001991 dicarboxylic acids Chemical class 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 125000002228 disulfide group Chemical group 0.000 description 1
- MOTZDAYCYVMXPC-UHFFFAOYSA-N dodecyl hydrogen sulfate Chemical compound CCCCCCCCCCCCOS(O)(=O)=O MOTZDAYCYVMXPC-UHFFFAOYSA-N 0.000 description 1
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- 239000003480 eluent Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
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- 159000000011 group IA salts Chemical class 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
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- RDOXTESZEPMUJZ-UHFFFAOYSA-N methyl phenyl ether Natural products COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000003136 n-heptyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
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- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- 230000000379 polymerizing effect Effects 0.000 description 1
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- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
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- 239000011541 reaction mixture Substances 0.000 description 1
- QEVHRUUCFGRFIF-MDEJGZGSSA-N reserpine Chemical compound O([C@H]1[C@@H]([C@H]([C@H]2C[C@@H]3C4=C(C5=CC=C(OC)C=C5N4)CCN3C[C@H]2C1)C(=O)OC)OC)C(=O)C1=CC(OC)=C(OC)C(OC)=C1 QEVHRUUCFGRFIF-MDEJGZGSSA-N 0.000 description 1
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- 238000000926 separation method Methods 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
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- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000012086 standard solution Substances 0.000 description 1
- 150000003440 styrenes Chemical class 0.000 description 1
- 239000005720 sucrose Substances 0.000 description 1
- 150000008163 sugars Chemical class 0.000 description 1
- 125000001174 sulfone group Chemical group 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
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- 150000003462 sulfoxides Chemical class 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
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- 238000012360 testing method Methods 0.000 description 1
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- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- GBXQPDCOMJJCMJ-UHFFFAOYSA-M trimethyl-[6-(trimethylazaniumyl)hexyl]azanium;bromide Chemical compound [Br-].C[N+](C)(C)CCCCCC[N+](C)(C)C GBXQPDCOMJJCMJ-UHFFFAOYSA-M 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- 239000008096 xylene Substances 0.000 description 1
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Abstract
【選択図】図2
Description
I)チオフェン単量体および酸化剤を含む組成物Z1を準備する工程と、
II)この酸化剤を還元生成物へと還元し、チオフェン単量体を酸化することにより、このチオフェン単量体を酸化重合させ、ポリチオフェンおよび上記還元生成物を含む組成物Z2を形成する工程と、
III)工程II)で得られた組成物Z2から、この還元生成物を少なくとも部分的に除去して、組成物Z3を得る工程と
を含み、組成物Z3中の未重合のチオフェン単量体の含有量が、いずれの場合も組成物Z3の総重量に基づき1ppm〜100ppmの範囲、好ましくは3ppm〜50ppmの範囲、特に好ましくは5ppm〜30ppmの範囲にあることが確保される、製造方法によってなされる。
Aは、置換されていてもよいC1−C5−アルキレン残基を表し、
Rは、互いに独立に、H、直鎖状もしくは分枝状の、置換されていてもよいC1−C18−アルキル残基、置換されていてもよいC5−C12−シクロアルキル残基、置換されていてもよいC6−C14−アリール基、置換されていてもよいC7−C18−アラルキル残基、置換されていてもよいC1−C4−ヒドロキシアルキル残基またはヒドロキシル残基を表し、
xは、0〜8の整数を表し、
複数の残基RがAに結合されている場合、それらの残基は、同じであってもよいしまたは異なってもよい)
である。一般式(I)は、x個の置換基Rがアルキレン残基Aに結合されていてもよいというように理解されるべきである。
a)1分子あたり1つの電子を吸収する酸化剤の場合には、2.33:1未満の酸化剤:チオフェン単量体のモル比で使用され、
b)1分子あたり2つの電子を吸収する酸化剤の場合には、1.16:1未満の酸化剤:チオフェン単量体のモル比で使用される、
ことが特に好ましい。
i)少なくとも200S/cm、好ましくは少なくとも400S/cm、特に好ましくは少なくとも500S/cmの、本願明細書に記載される試験方法による電気伝導率、
ii)いずれの場合も当該組成物の総重量に基づき0.05重量%〜50重量%、好ましくは0.1重量%〜10重量%、特に好ましくは0.8重量%〜2重量%の範囲のPEDOT/PSS含有量。
A)基板表面を持つ基板と、
B)この基板表面を少なくとも部分的に覆う層と、
を含み、この層は、本発明に係る組成物または本発明に係る方法によって得ることができる組成物に含まれる固形分から形成される、層構築物によってもなされる。
B1)当該層の内部透過率は、50%超、好ましくは70%超、特に好ましくは80%超である、
B2)少なくとも200S/cm、好ましくは少なくとも400S/cm、特に好ましくは少なくとも500S/cmの、本願明細書に記載される試験方法による電気伝導率。
特段の記載がない限り、温度21℃、50%〜70%の範囲の大気湿度、大気圧の実験室中で試験を実施した。
PEDOT:PSS分散液の中のEDTの量は、紫外可視検出器を取り付け、関連ソフトウェアを具えたHPLC(高速液体クロマトグラフ)を用いて決定した。
洗浄したガラス基板をスピンコーターに置き、この基板上に10mLの本発明に係る組成物を広げた。次いで、残りの溶液を、プレートの回転により振り落とした。このあと、このようにコーティングした基板を、ホットプレートの上で、130℃で15分間乾燥した。次いで、層の厚さを測定する装置(Tencor、Alphastep 500)を用いて層の厚さを求めた。長さ2.5cmのAg電極を、シャドーマスクを介して10mmの距離で気相堆積することによって、電気伝導率を求めた。電位計(Keithly 614)を用いて求めた表面抵抗に層の厚さを掛け合わせ、比電気抵抗を得た。電気伝導率は、この比電気抵抗の逆数である。
20gの組成物を250mLのビーカーの中に入れた。次いでこの組成物を、45°の傾斜角度を有する滑らかなプラスチック表面に注ぎ込んだ。
a)ビーカーから注ぎ込んだときに、その組成物は、均等に流れず、この組成物が塊となってガラス壁に付着して残る領域および組成物がほとんど何も残っていない領域を残す。
b)その物質がプラスチック表面にわたって流れるとき、この物質は所々に塊となって残る。この流れは、均一でなく、何度も断裂する[図1]。
A)注ぎ出されたとき、均一な膜がビーカー壁に残り、この膜は、組成物の粘度に応じて薄いかまたは厚い。どの場合でも、膜は均一であり、不均等性をまったく示さない。
B)この物質がプラスチック表面にわたって流れるとき、均一な膜が生成する[図2]。
コーティングした基板の透過率は、2チャネル分光計(PerkinElmer製のLambda900)を用いて求めた。試料によって散乱した透過光のあらゆる部分をさらに検出するために、この装置に、球形光束計(Ulbricht Sphere)を取り付けられていた。測定対象の試料を球形光束計の入力開口部に固定した。
内部透過率は、Y/Y0×100%に対応する。
撹拌機、物質導入口、ガス注入管、およびサーモスタットを取り付けた温度調整用ジャケットを具える3リットルのガラスシリンダーの中に、2,050gの水、500gのポリスチレンスルホン酸水溶液(5.0%、Mw=70,000g/mol)および5.6gの10%硫酸鉄(III)溶液を入れた。撹拌機を50rpmで回転した。温度を18℃に設定した。この溶液に、ガスラインを介して30分間、窒素を供給した。その後、物質導入口を介して、10.13gの3,4−エチレンジオキシチオフェン(71.2mmol;H.C.Starck Clevios GmbH製のClevios M V2)を導入した。次いで、23.7gのペルオキソ二硫酸ナトリウム(99.5mmol)を、物質導入口を通して加えた。この混合物を18℃で18時間撹拌した。この反応が完結した後、この混合物をプラスチック製ビーカーに移し、無機塩を除去するために、500mLの陽イオン交換体(Lewatit S100 H、Lanxess AG製)および290mLの陰イオン交換体(Lewatit MP 62、Lanxess AG製)を加えた。この混合物を2時間撹拌し、Lewatitを濾別した。最後に、この混合物を10μmフィルターに通した。
撹拌機、物質導入口、ガス注入管、およびサーモスタットを取り付けた温度調整用ジャケットを具える3リットルのガラスシリンダーの中に、2,050gの水、500gのポリスチレンスルホン酸水溶液(5.0%、Mw=70,000g/mol)および5.6gの10%硫酸鉄(III)溶液を入れた。撹拌機を50rpmで回転した。温度を18℃に設定した。この溶液に、ガスラインを介して30分間、窒素を供給した。その後、物質導入口を介して、10.13gの3,4−エチレンジオキシチオフェン(71.2mmol;Clevios M V2、H.C.Starck Clevios GmbH製)を導入した。次いで、18.6gのペルオキソ二硫酸ナトリウム(78.1mmol)を、物質導入口を通して加えた。この混合物を18℃で18時間撹拌した。この反応が完結した後、この混合物をプラスチック製ビーカーに移し、無機塩を除去するために、500mLの陽イオン交換体(Lewatit S100 H、Lanxess AG製)および290mLの陰イオン交換体(Lewatit MP 62、Lanxess AG製)を加えた。この混合物を2時間撹拌し、Lewatitを濾別した。最後に、この混合物を10μmフィルターに通した。
撹拌機、物質導入口、ガス注入管、およびサーモスタットを取り付けた温度調整用ジャケットを具える3リットルのガラスシリンダーの中に、2,050gの水、500gのポリスチレンスルホン酸水溶液(5.0%、Mw=70,000g/mol)および5.6gの10%硫酸鉄(III)溶液を入れた。撹拌機を50rpmで回転した。温度を18℃に設定した。この溶液に、ガスラインを介して30分間、窒素を供給した。その後、物質導入口を介して、10.13gのエチレンジオキシチオフェン(71.2mmol;H.C.Starck Clevios GmbH製のClevios M V2)を導入した。次いで、19.5gのペルオキソ二硫酸ナトリウム(81.9mmol)を、物質導入口を通して加えた。この混合物を18℃で18時間撹拌した。この反応が完結した後、この混合物をプラスチック製ビーカーに移し、無機塩を除去するために、500mLの陽イオン交換体(Lewatit S100 H、Lanxess AG製)および290mLの陰イオン交換体(Lewatit MP 62、Lanxess AG製)を加えた。この混合物を2時間撹拌し、Lewatitを濾別した。最後に、この混合物を10μmフィルターに通した。
PEDOT/PSS分散液の合成は、実施例3と同様に実施した。イオン交換体の添加後、混合物を3時間撹拌し、次いでイオン交換体を濾別した。次いで、この混合物を濾過した。
PEDOT/PSS分散液の合成は、実施例3と同様に実施した。イオン交換体の添加後、混合物を14時間撹拌し、次いでイオン交換体を濾別した。次いで、この混合物を濾過した。
Claims (23)
- ポリチオフェンを含む組成物の製造方法であって、
I)チオフェン単量体および酸化剤を含む組成物Z1を準備する工程と、
II)前記酸化剤を還元生成物へと還元し、前記チオフェン単量体を酸化することにより、前記チオフェン単量体を酸化重合させ、ポリチオフェンおよび前記還元生成物を含む組成物Z2を形成する工程と、
III)工程II)で得られた前記組成物Z2から、前記還元生成物を少なくとも部分的に除去して、組成物Z3を得る工程と、
を含み、工程III)の完結後に、前記組成物Z3中の未重合のチオフェン単量体の含有量は、前記組成物Z3の総重量に基づき1ppm〜100ppmの範囲にあることが確保される、製造方法。 - 工程III)の完結後に、前記組成物Z3中の未重合のチオフェン単量体の含有量は、前記組成物Z3の総重量に基づき3ppm〜50ppmの範囲にある、請求項1に記載の製造方法。
- 工程III)の完結後に、前記組成物Z3中の未重合のチオフェン単量体の含有量は、前記組成物Z3の総重量に基づき5ppm〜30ppmの範囲にある、請求項1または請求項2に記載の製造方法。
- 前記チオフェン単量体は3,4−エチレンジオキシチオフェン(EDT)であり、前記ポリチオフェンはポリ(3,4−エチレンジオキシチオフェン)(PEDOT)である、請求項1から請求項3のいずれか1項に記載の製造方法。
- 前記チオフェン単量体および前記酸化剤に加えて、工程I)で準備される溶液は、ポリアニオンをも含む、請求項1から請求項4のいずれか1項に記載の製造方法。
- 前記ポリアニオンはポリスチレンスルホン酸(PSS)である、請求項5に記載の製造方法。
- 工程III)で得られる前記組成物Z3はPEDOT/PSS分散液である、請求項1から請求項6のいずれか1項に記載の製造方法。
- 工程I)における前記酸化剤は、
a)1分子あたり1つの電子を吸収する酸化剤の場合には、2.33:1未満の酸化剤:チオフェン単量体のモル比で使用され、
b)1分子あたり2つの電子を吸収する酸化剤の場合には、1.16:1未満の酸化剤:チオフェン単量体のモル比で使用される、
請求項1から請求項7のいずれか1項に記載の製造方法。 - 工程III)において前記還元生成物を少なくとも部分的に除去することは、前記組成物Z2をイオン交換体で処理することによって行われる、請求項1から請求項8のいずれか1項に記載の製造方法。
- 請求項1から請求項9のいずれか1項に記載の製造方法を使用して、組成物Z3として得ることができる組成物。
- ポリチオフェンを含む組成物であって、前記組成物は、前記ポリチオフェンに加えて、前記組成物の総重量に基づき1ppm〜100ppmの範囲の、前記ポリチオフェンが基礎とするチオフェン単量体を含む、組成物。
- 前記組成物は、前記組成物の総重量に基づき3ppm〜50ppmの範囲の、前記ポリチオフェンが基礎とするチオフェン単量体を含む、請求項11に記載の組成物。
- 前記組成物は、前記組成物の総重量に基づき5ppm〜30ppmの範囲の、前記ポリチオフェンが基礎とするチオフェン単量体を含む、請求項11に記載の組成物。
- 前記組成物は、前記組成物の総重量に基づき500ppm未満の無機アニオンを含む、請求項11から請求項13のいずれか1項に記載の組成物。
- 前記ポリチオフェンはポリ(3,4−エチレンジオキシチオフェン)であり、前記チオフェン単量体は3,4−エチレンジオキシチオフェンである、請求項11から請求項14のいずれか1項に記載の組成物。
- 前記ポリチオフェンに加えて、前記組成物はポリアニオンを含む、請求項11から請求項15のいずれか1項に記載の組成物。
- 前記ポリアニオンはポリスチレンスルホン酸である、請求項16に記載の組成物。
- 前記組成物はPEDOT/PSS分散液である、請求項11から請求項17のいずれか1項に記載の組成物。
- 前記組成物は、以下の特性:
i)少なくとも500S/cmの、本願明細書に記載される試験方法による電気伝導率、
ii)前記組成物の総重量に基づき0.8重量%〜2重量%の範囲のPEDOT/PSS含有量、
のうちの少なくとも1つを有する、請求項11から請求項18のいずれか1項に記載の組成物。 - 層構築物であって、
A)基板表面を持つ基板と、
B)前記基板表面を少なくとも部分的に覆う層と、
を含み、前記層は、請求項10から請求項19のいずれか1項に記載の組成物に含まれる固形分から形成される、層構築物。 - 前記層B)は、以下の特性:
B1)前記層の内部透過率は80%超である、
B2)前記層の電気伝導率は少なくとも500S/cmである、
を有する、請求項20に記載の層構築物。 - 請求項20または請求項21に記載の層構築物を含む電子部品。
- 電子部品における導電層を製造するための、請求項10から請求項19のいずれか1項に記載の組成物の使用。
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Cited By (4)
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JP2013540865A (ja) * | 2010-10-12 | 2013-11-07 | ヘレウス プレシャス メタルズ ゲーエムベーハー ウント コンパニー カーゲー | 明確な硫酸イオン含有量を持つポリチオフェンを含む分散液 |
WO2018123177A1 (ja) | 2016-12-28 | 2018-07-05 | 昭和電工株式会社 | ポリイソチアナフテン系導電性重合体の製造方法 |
KR20190084124A (ko) | 2016-12-28 | 2019-07-15 | 쇼와 덴코 가부시키가이샤 | 폴리이소티아나프텐계 도전성 중합체의 제조 방법 |
US11136432B2 (en) | 2016-12-28 | 2021-10-05 | Showa Denko K.K. | Method for producing polyisothianaphthene-based electroconductive polymer |
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JP5795642B2 (ja) | 2015-10-14 |
TW201219444A (en) | 2012-05-16 |
EP3255104A1 (en) | 2017-12-13 |
DE102010048032A1 (de) | 2012-04-12 |
EP2627712A1 (en) | 2013-08-21 |
KR20130117792A (ko) | 2013-10-28 |
KR101776363B1 (ko) | 2017-09-07 |
WO2012048823A1 (en) | 2012-04-19 |
CN103180386B (zh) | 2016-04-06 |
EP2627712B1 (en) | 2017-08-02 |
US20130261261A1 (en) | 2013-10-03 |
US9053839B2 (en) | 2015-06-09 |
CN103180386A (zh) | 2013-06-26 |
TWI522386B (zh) | 2016-02-21 |
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