JP2013536586A - 電子部品及びその製造方法 - Google Patents
電子部品及びその製造方法 Download PDFInfo
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- 238000007789 sealing Methods 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
- 239000002923 metal particle Substances 0.000 claims description 40
- 229920000642 polymer Polymers 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 20
- 238000007641 inkjet printing Methods 0.000 claims description 12
- 239000002245 particle Substances 0.000 claims description 7
- 238000007306 functionalization reaction Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 239000002082 metal nanoparticle Substances 0.000 claims description 5
- 238000002444 silanisation Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 54
- 239000000463 material Substances 0.000 description 22
- 238000006557 surface reaction Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 7
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 238000003801 milling Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 238000009736 wetting Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
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- 238000003825 pressing Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
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- 238000010897 surface acoustic wave method Methods 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
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- 125000000524 functional group Chemical group 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
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- 239000010954 inorganic particle Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- -1 silane compound Chemical class 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0077—Other packages not provided for in groups B81B7/0035 - B81B7/0074
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00333—Aspects relating to packaging of MEMS devices, not covered by groups B81C1/00269 - B81C1/00325
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/09—Packages
- B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
- B81B2207/093—Conductive package seal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0109—Bonding an individual cap on the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0118—Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8112—Aligning
- H01L2224/81136—Aligning involving guiding structures, e.g. spacers or supporting members
- H01L2224/81138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
- H01L2224/8114—Guiding structures outside the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Micromachines (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
【選択図】図1
Description
CH チップ
CF 積層フィルム
NP 金属粒子
MF 金属フレーム
P ポリマ
SL 封止層
W ウェハ
S 基板
Claims (17)
- 電子部品であって,
・基板(S)と,
・チップ(CH)と,
・前記基板(S)に結合されると共に,前記チップ(CH)がその上に配置されているフレーム(MF)と,
・前記基板(S),前記チップ(CH)及び前記フレーム(MF)が包囲する容積部分を気密封止すべく,前記フレーム(MF)及び前記チップ(CH)上の一部に形成されている封止層(SL)と,
を備える電子部品。 - 請求項1に記載の電子部品であって,前記封止層(SL)は,インクジェット印刷で形成した構造を有し,ポリマ(P)又は金属粒子(NP)又はポリマ及び金属粒子の混合物(P,NP)で構成されている電子部品。
- 請求項1又は2に記載の電子部品であって,前記封止層(SL)は,その形成後に粒径10nm未満の金属ナノ粒子で構成されている電子部品。
- 請求項1〜3の何れか一項に記載の電子部品であって,前記封止層(SL)は,前記フレーム(MF)及びチップ(CH)を完全に包囲している電子部品。
e - 請求項1〜4の何れか一項に記載の電子部品であって,前記フレーム(MF)は平坦な表面(PS)を有し,これにより該フレーム(MF)上に前記チップ(CH)が均一に配置されている電子部品。
- 請求項1〜5の何れか一項に記載の電子部品であって,前記チップ(CH)は,バンプ接続部(B)により前記基板(S)に接続されている電子部品。
- 請求項6に記載の電子部品であって,前記バンプ接続部(B)の熱膨張係数(CTE_Bump)は,前記フレーム(MF)の熱膨張係数(CTE_MF)よりも大きい電子部品。
- 請求項1〜7の何れか一項に記載の電子部品であって,前記基板(S)及び/又はチップ(CH)は,機能化した表面(FS)を有する電子部品。
- 請求項8に記載の電子部品であって,前記機能化した表面(FS)は,機能性シラン基で構成されている電子部品。
- 請求項1〜9の何れか一項に記載の電子部品であって,前記封止層(SL)は,
・断片的に前記ポリマ(P)又は前記金属粒子(NP)のみで構成され,或いは
・前記ポリマ(P)又は前記金属粒子(NP)のみで構成されている電子部品。 - 請求項1〜10の何れか一項に記載の電子部品であって,前記チップ(CH)は,微小電気機械システム(MEMS),微小電気光学システム(MEOPS)又は微小電気光学機械システム(MEOMS)である電子部品。
- 基板(S),チップ(CH)及びフレーム(MF)を備える電子部品の製造方法であって,
・前記金属フレーム(MF)を前記基板(S)上に取り付けるステップと,
・前記チップ(CH)を前記フレーム(MF)に結合することにより前記チップ(CH)を前記フレーム(MF)上に配置し,かつ,前記チップ(CH)及び前記フレーム(MF)間を気密封止するステップと,
を含む方法。 - 請求項12に記載の方法であって,ポリマ(P),又は金属粒子(NP),又は該ポリマ(P)及び金属粒子(NP)の混合物よりなる封止層(SL)を,インクジェット印刷で形成する方法。
- 請求項12又は13に記載の方法であって,前記基板(S),前記チップ(CH)又は該チップ(CH)を取り付けたパネルを機能化するステップを更に含む方法。
- 請求項14に記載の方法であって,前記機能化をシラン化により行う方法。
- 請求項12〜15の何れか一項に記載の方法であって,前記封止層(SL)をインクジェット印刷で形成するに当たり,
・一部が前記ポリマ(P)のみで構成され,一部が前記金属粒子(NP)のみで構成される前記封止層(SL)を断片的に形成するか,或いは
・前記ポリマ(P)のみ又は前記金属粒子(NP)のみで構成される前記封止層(SL)を形成する方法。 - 請求項12〜16の何れか一項に記載の方法であって,前記チップ(CH)及び前記フレーム(MF)間における気密封止は,前記チップ(CH)及び前記基板(S)間におけるバンプ接続部(B)で前記チップ(CH)を加圧下で前記フレーム(MF)に結合することにより行う方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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DE102010035390 | 2010-08-25 | ||
DE102010035390.6 | 2010-08-25 | ||
DE102011018296.9A DE102011018296B4 (de) | 2010-08-25 | 2011-04-20 | Bauelement und Verfahren zum Herstellen eines Bauelements |
DE102011018296.9 | 2011-04-20 | ||
PCT/EP2011/063127 WO2012025334A1 (de) | 2010-08-25 | 2011-07-29 | Bauelement und verfahren zum herstellen eines bauelements |
Publications (2)
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JP2013536586A true JP2013536586A (ja) | 2013-09-19 |
JP5734433B2 JP5734433B2 (ja) | 2015-06-17 |
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US (1) | US9382110B2 (ja) |
JP (1) | JP5734433B2 (ja) |
KR (1) | KR101839913B1 (ja) |
DE (1) | DE102011018296B4 (ja) |
WO (1) | WO2012025334A1 (ja) |
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JP6296687B2 (ja) * | 2012-04-27 | 2018-03-20 | キヤノン株式会社 | 電子部品、電子モジュールおよびこれらの製造方法。 |
JP5885690B2 (ja) | 2012-04-27 | 2016-03-15 | キヤノン株式会社 | 電子部品および電子機器 |
JP2013243340A (ja) * | 2012-04-27 | 2013-12-05 | Canon Inc | 電子部品、実装部材、電子機器およびこれらの製造方法 |
US9875987B2 (en) * | 2014-10-07 | 2018-01-23 | Nxp Usa, Inc. | Electronic devices with semiconductor die attached with sintered metallic layers, and methods of formation of such devices |
CN106598143A (zh) * | 2015-10-15 | 2017-04-26 | 中兴通讯股份有限公司 | 图案显示方法及装置 |
US9721864B2 (en) * | 2015-12-30 | 2017-08-01 | International Business Machines Corporation | Low cost hermetic micro-electronics |
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US20130214405A1 (en) | 2013-08-22 |
WO2012025334A1 (de) | 2012-03-01 |
US9382110B2 (en) | 2016-07-05 |
JP5734433B2 (ja) | 2015-06-17 |
DE102011018296A1 (de) | 2012-03-01 |
KR20130137616A (ko) | 2013-12-17 |
DE102011018296B4 (de) | 2020-07-30 |
KR101839913B1 (ko) | 2018-03-19 |
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