JP2014099781A - 圧電部品 - Google Patents
圧電部品 Download PDFInfo
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- JP2014099781A JP2014099781A JP2012250824A JP2012250824A JP2014099781A JP 2014099781 A JP2014099781 A JP 2014099781A JP 2012250824 A JP2012250824 A JP 2012250824A JP 2012250824 A JP2012250824 A JP 2012250824A JP 2014099781 A JP2014099781 A JP 2014099781A
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- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
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- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
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- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45644—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
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- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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- H01L2924/181—Encapsulation
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
【解決手段】主面に櫛歯電極2aとその入出力電極2bを形成した圧電板1と、櫛歯電極の上方に設けたカバー層8と、櫛歯電極とカバー層との間に空隙を形成するためのリブ7と、リブの圧電板側に設けたアンダーバンプメタル膜2cと、カバー層を覆って空隙を気密封止する金属薄膜9と、カバー層の外側端部に配置されて入出力電極と電気的に接続する導通接続部材23と、導通接続部材と電気的に接続するパッド12を有して圧電板とで当該圧電板の前記主面を挟持するプリント基板11とを有し、カバー層8は、感光性熱硬化性樹脂8aに透光性フィラーとして白色マイカの微片(微小マイカ片:フィラー)8bを混入した樹脂フィルムで構成され、少なくとも圧電板とプリント基板の接合した側周部を樹脂封止した。
【選択図】図1
Description
Claims (7)
- 主面に櫛歯電極とその入出力電極パターンを形成した圧電板と、前記櫛歯電極の上方に設けたカバー層と、前記櫛歯電極と前記カバー層との間に前記空隙を形成するためのリブと、前記リブの前記圧電板側に設けたアンダーバンプメタル膜と、前記カバー層を覆って前記空隙を気密封止する金属薄膜とからなる圧電素子と、
前記圧電素子と一体に接合され、前記圧電素子の前記入出力電極と電気的に接続する電極端子と外部機器への実装端子を備えた配線基板とからなる圧電部品であって、
前記カバー層は、感光性熱硬化性樹脂に透光性フィラーを混入した樹脂フィルムで構成され、
少なくとも前記圧電板と前記配線基板を樹脂封止してなることを特徴とする圧電部品。 - 請求項1において、
前記透光性フィラーは、白色マイカの微片であり、前記白色マイカの微片を樹脂フィルムの主剤に対して45乃至55重量パーセント含有してなることを特徴とする圧電部品。 - 請求項1又は2において、
前記圧電素子の前記入出力電極と前記配線基板の電極端子は、前記カバー層の外側端部に配置された導通接続部材を介して電気的に接続されることを特徴とする圧電部品。 - 請求項3において、
前記入出力電極と配線基板とを電気的に接続する導通接続部材は半田ボールであることを特徴とする圧電部品。 - 請求項3において、
前記入出力電極と配線基板とを電気的に接続する導通接続部材は銅ボールであることを特徴とする圧電部品。 - 請求項1又は2において、
前記圧電素子の前記入出力電極と前記配線基板の電極端子は、ワイヤーにより電気的に接続してなることを特徴とする圧電部品。 - 請求項1乃至6の何れかにおいて、
前記圧電素子は、一個のデバイスに複数搭載されていることを特徴とする圧電部品。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012250824A JP2014099781A (ja) | 2012-11-15 | 2012-11-15 | 圧電部品 |
US14/079,640 US9264016B2 (en) | 2012-11-15 | 2013-11-14 | Piezoelectric component having a cover layer including resin that contains translucent filler |
TW102141370A TW201419596A (zh) | 2012-11-15 | 2013-11-14 | 壓電零件 |
CN201310566415.0A CN103824932A (zh) | 2012-11-15 | 2013-11-14 | 压电零件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2012250824A JP2014099781A (ja) | 2012-11-15 | 2012-11-15 | 圧電部品 |
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JP2014099781A true JP2014099781A (ja) | 2014-05-29 |
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Application Number | Title | Priority Date | Filing Date |
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JP2012250824A Pending JP2014099781A (ja) | 2012-11-15 | 2012-11-15 | 圧電部品 |
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JP (1) | JP2014099781A (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016042928A1 (ja) * | 2014-09-19 | 2016-03-24 | 日本電波工業株式会社 | 圧電デバイスとその製造方法 |
JP2016066989A (ja) * | 2014-09-19 | 2016-04-28 | 日本電波工業株式会社 | 圧電デバイスとその製造方法 |
JP2016063937A (ja) * | 2014-09-24 | 2016-04-28 | 株式会社アドバンテスト | 脈波センサユニット |
WO2016121453A1 (ja) * | 2015-01-26 | 2016-08-04 | 日立オートモティブシステムズ株式会社 | 半導体センサ装置 |
CN113612461A (zh) * | 2021-07-20 | 2021-11-05 | 北京航天微电科技有限公司 | 一种saw滤波器的芯片级气密性封装工艺 |
WO2023248751A1 (ja) * | 2022-06-23 | 2023-12-28 | 京セラ株式会社 | 弾性波装置、弾性波装置の製造方法、および通信装置 |
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JPH10270975A (ja) * | 1996-03-08 | 1998-10-09 | Matsushita Electric Ind Co Ltd | 電子部品とその製造方法 |
JP2002232260A (ja) * | 2001-02-06 | 2002-08-16 | Matsushita Electric Ind Co Ltd | 弾性表面波装置とその製造方法 |
JP2002290183A (ja) * | 2001-03-28 | 2002-10-04 | Matsushita Electric Ind Co Ltd | Sawデバイスの製造方法 |
JP2011023930A (ja) * | 2009-07-15 | 2011-02-03 | Panasonic Corp | 弾性波素子とこれを用いた電子機器 |
JP2011147097A (ja) * | 2009-05-26 | 2011-07-28 | Nippon Dempa Kogyo Co Ltd | 圧電部品及びその製造方法 |
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Patent Citations (6)
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JPH10270975A (ja) * | 1996-03-08 | 1998-10-09 | Matsushita Electric Ind Co Ltd | 電子部品とその製造方法 |
JP2002232260A (ja) * | 2001-02-06 | 2002-08-16 | Matsushita Electric Ind Co Ltd | 弾性表面波装置とその製造方法 |
JP2002290183A (ja) * | 2001-03-28 | 2002-10-04 | Matsushita Electric Ind Co Ltd | Sawデバイスの製造方法 |
JP2011147097A (ja) * | 2009-05-26 | 2011-07-28 | Nippon Dempa Kogyo Co Ltd | 圧電部品及びその製造方法 |
JP2011023930A (ja) * | 2009-07-15 | 2011-02-03 | Panasonic Corp | 弾性波素子とこれを用いた電子機器 |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016042928A1 (ja) * | 2014-09-19 | 2016-03-24 | 日本電波工業株式会社 | 圧電デバイスとその製造方法 |
JP2016066989A (ja) * | 2014-09-19 | 2016-04-28 | 日本電波工業株式会社 | 圧電デバイスとその製造方法 |
US20170288123A1 (en) * | 2014-09-19 | 2017-10-05 | Nihon Dempa Kogyo Co., Ltd. | Piezoelectric device and method for manufacturing the same |
JP2016063937A (ja) * | 2014-09-24 | 2016-04-28 | 株式会社アドバンテスト | 脈波センサユニット |
WO2016121453A1 (ja) * | 2015-01-26 | 2016-08-04 | 日立オートモティブシステムズ株式会社 | 半導体センサ装置 |
JPWO2016121453A1 (ja) * | 2015-01-26 | 2017-06-22 | 日立オートモティブシステムズ株式会社 | 半導体センサ装置 |
CN113612461A (zh) * | 2021-07-20 | 2021-11-05 | 北京航天微电科技有限公司 | 一种saw滤波器的芯片级气密性封装工艺 |
CN113612461B (zh) * | 2021-07-20 | 2024-02-09 | 北京航天微电科技有限公司 | 一种saw滤波器的芯片级气密性封装工艺 |
WO2023248751A1 (ja) * | 2022-06-23 | 2023-12-28 | 京セラ株式会社 | 弾性波装置、弾性波装置の製造方法、および通信装置 |
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