JP2012151698A - 弾性波デバイス - Google Patents
弾性波デバイス Download PDFInfo
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- JP2012151698A JP2012151698A JP2011009302A JP2011009302A JP2012151698A JP 2012151698 A JP2012151698 A JP 2012151698A JP 2011009302 A JP2011009302 A JP 2011009302A JP 2011009302 A JP2011009302 A JP 2011009302A JP 2012151698 A JP2012151698 A JP 2012151698A
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- wave device
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- 239000000758 substrate Substances 0.000 claims abstract description 133
- 229910000679 solder Inorganic materials 0.000 claims abstract description 120
- 229910052751 metal Inorganic materials 0.000 claims abstract description 109
- 239000002184 metal Substances 0.000 claims abstract description 109
- 238000002844 melting Methods 0.000 claims abstract description 18
- 230000008018 melting Effects 0.000 claims abstract description 18
- 238000010030 laminating Methods 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 26
- 239000010410 layer Substances 0.000 description 105
- 238000007789 sealing Methods 0.000 description 43
- 239000010408 film Substances 0.000 description 28
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 27
- 239000010949 copper Substances 0.000 description 24
- 239000010931 gold Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 21
- 229910045601 alloy Inorganic materials 0.000 description 14
- 239000000956 alloy Substances 0.000 description 14
- 239000010936 titanium Substances 0.000 description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 11
- 229910052737 gold Inorganic materials 0.000 description 11
- 229920005989 resin Polymers 0.000 description 11
- 239000011347 resin Substances 0.000 description 11
- 229910052759 nickel Inorganic materials 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910000838 Al alloy Inorganic materials 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- 239000003822 epoxy resin Substances 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- 238000010897 surface acoustic wave method Methods 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 239000011247 coating layer Substances 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 230000004907 flux Effects 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 3
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910000833 kovar Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910016347 CuSn Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910007637 SnAg Inorganic materials 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/058—Holders; Supports for surface acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0504—Holders; Supports for bulk acoustic wave devices
- H03H9/0514—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps
- H03H9/0523—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps for flip-chip mounting
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/058—Holders; Supports for surface acoustic wave devices
- H03H9/059—Holders; Supports for surface acoustic wave devices consisting of mounting pads or bumps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1042—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a housing formed by a cavity in a resin
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/105—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the BAW device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1078—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a foil covering the non-active sides of the SAW device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1085—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a non-uniform sealing mass covering the non-active sides of the BAW device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15182—Fan-in arrangement of the internal vias
- H01L2924/15184—Fan-in arrangement of the internal vias in different layers of the multilayer substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Wire Bonding (AREA)
Abstract
【解決手段】本発明は、絶縁性基板11と、弾性波を励振する振動部22を有し、振動部22が絶縁性基板11と対向し、かつ振動部22が空隙51に露出するように、絶縁性基板11の上面に実装された弾性波デバイスチップ20と、振動部22を囲むように設けられ、絶縁性基板11と弾性波デバイスチップ20とを接合する接合部と、を具備し、接合部は、半田32と、半田32より高い融点を有しかつ絶縁性基板11の上面のコプラナリティより大きな厚さを有する金属層42と、を積層して形成されている弾性波デバイスである。
【選択図】図2
Description
電極 12
弾性波デバイスチップ 20
圧電基板 21
振動部 22
IDT 22A
反射器 22B
配線 23
空隙 51
半田 31、32
柱状電極 41
金属層 42
チップ部品 50
弾性波デバイス 100、100A、100S
モジュール 200
Claims (5)
- 基板と、
弾性波を励振する振動部を有し、前記振動部が前記基板と対向し、かつ前記振動部が空隙に露出するように、前記基板の上面に実装された弾性波デバイスチップと、
前記振動部を囲むように設けられ、前記基板と前記弾性波デバイスチップとを接合する接合部と、を具備し、
前記接合部は、半田と、前記半田より高い融点を有しかつ前記基板の上面のコプラナリティより大きな厚さを有する高融点材と、を積層して形成されていることを特徴とする弾性波デバイス。 - 前記高融点材は、前記半田より大きな厚さを有することを特徴とする請求項1記載の弾性波デバイス。
- 前記基板の前記弾性波デバイスチップと対向する面に設けられた金属層を具備し、
前記高融点材は、前記半田よりも、前記弾性波デバイスチップに近い側に設けられ、
前記半田は前記金属層と接触し、
前記金属層は前記高融点材よりも高い半田濡れ性を有し、前記高融点材は前記基板よりも高い半田濡れ性を有することを特徴とする請求項1又は2記載の弾性波デバイス。 - 前記接合部は、前記振動部を完全に囲むことを特徴とする請求項1から3いずれか一項記載の弾性波デバイス。
- 前記基板と前記弾性波デバイスチップとを電気的に接合し、前記半田と、前記高融点材とを積層して形成された電極を具備することを特徴とする請求項1から4いずれか一項記載の弾性波デバイス。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011009302A JP2012151698A (ja) | 2011-01-19 | 2011-01-19 | 弾性波デバイス |
US13/352,500 US8749114B2 (en) | 2011-01-19 | 2012-01-18 | Acoustic wave device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011009302A JP2012151698A (ja) | 2011-01-19 | 2011-01-19 | 弾性波デバイス |
Publications (1)
Publication Number | Publication Date |
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JP2012151698A true JP2012151698A (ja) | 2012-08-09 |
Family
ID=46490262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2011009302A Pending JP2012151698A (ja) | 2011-01-19 | 2011-01-19 | 弾性波デバイス |
Country Status (2)
Country | Link |
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US (1) | US8749114B2 (ja) |
JP (1) | JP2012151698A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2014143640A (ja) * | 2013-01-25 | 2014-08-07 | Taiyo Yuden Co Ltd | 弾性波デバイス及びその製造方法 |
WO2015041153A1 (ja) * | 2013-09-20 | 2015-03-26 | 株式会社村田製作所 | 弾性波装置及びその製造方法 |
JP2016201780A (ja) * | 2015-04-14 | 2016-12-01 | 太陽誘電株式会社 | 弾性波デバイス |
JPWO2018216486A1 (ja) * | 2017-05-26 | 2020-03-12 | 株式会社村田製作所 | 電子部品およびそれを備えるモジュール |
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CN107615652B (zh) * | 2015-05-27 | 2020-06-23 | 株式会社村田制作所 | 压电振动元件搭载用基板以及压电振子及其制造方法 |
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US10637438B2 (en) | 2018-06-15 | 2020-04-28 | Resonant Inc. | Transversely-excited film bulk acoustic resonators for high power applications |
US20220060170A1 (en) * | 2018-06-15 | 2022-02-24 | Resonant Inc. | Solidly-mounted transversely-excited film bulk acoustic device |
US12040781B2 (en) | 2018-06-15 | 2024-07-16 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator package |
US20210044275A1 (en) | 2018-06-15 | 2021-02-11 | Resonant Inc. | Transversely-excited film bulk acoustic resonator package |
JP2022525465A (ja) * | 2019-04-05 | 2022-05-16 | レゾナント インコーポレイテッド | 横方向に励起されたフィルムバルク音響共振器パッケージ及び方法 |
JP7397611B2 (ja) * | 2019-09-26 | 2023-12-13 | 太陽誘電株式会社 | 電子デバイス |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06204352A (ja) * | 1992-12-25 | 1994-07-22 | Ngk Spark Plug Co Ltd | 半導体セラミックパッケージ用基体及び蓋体 |
JPH09162690A (ja) * | 1995-12-07 | 1997-06-20 | Rohm Co Ltd | 弾性表面波素子を有する装置およびその製造方法 |
WO1999005788A1 (fr) * | 1997-07-28 | 1999-02-04 | Kabushiki Kaisha Toshiba | Dispositif de traitement d'ondes acoustiques de surface et son procede de fabrication |
WO2003005577A1 (fr) * | 2001-07-02 | 2003-01-16 | Matsushita Electric Industrial Co., Ltd. | Procede de production de dispositifs de traitement des ondes acoustiques de surface |
JP2004194290A (ja) * | 2002-11-26 | 2004-07-08 | Murata Mfg Co Ltd | 電子部品の製造方法 |
JP2005236159A (ja) * | 2004-02-23 | 2005-09-02 | Mitsubishi Electric Corp | 気密封止パッケージ、ウエハレベル気密封止パッケージ、気密封止パッケージの製造方法、およびウエハレベル気密封止パッケージの製造方法 |
JP2007081555A (ja) * | 2005-09-12 | 2007-03-29 | Kyocera Corp | 弾性表面波装置 |
JP2007149742A (ja) * | 2005-11-24 | 2007-06-14 | Mitsubishi Electric Corp | パッケージおよびそれを用いた電子装置 |
JP2007281245A (ja) * | 2006-04-07 | 2007-10-25 | Mitsubishi Electric Corp | 電子装置 |
JP2010081211A (ja) * | 2008-09-25 | 2010-04-08 | Kyocera Corp | 弾性表面波装置及びその製造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3196693B2 (ja) * | 1997-08-05 | 2001-08-06 | 日本電気株式会社 | 表面弾性波装置およびその製造方法 |
JP3351402B2 (ja) * | 1999-04-28 | 2002-11-25 | 株式会社村田製作所 | 電子素子、弾性表面波素子、それらの実装方法、電子部品または弾性表面波装置の製造方法、および、弾性表面波装置 |
JP2003087080A (ja) * | 2001-07-06 | 2003-03-20 | Murata Mfg Co Ltd | 弾性表面波素子及びその製造方法 |
JP4179038B2 (ja) * | 2002-06-03 | 2008-11-12 | 株式会社村田製作所 | 表面弾性波装置 |
JP4077679B2 (ja) | 2002-07-31 | 2008-04-16 | 京セラ株式会社 | 弾性表面波装置の製造方法 |
US7154206B2 (en) * | 2002-07-31 | 2006-12-26 | Kyocera Corporation | Surface acoustic wave device and method for manufacturing same |
JP4177233B2 (ja) * | 2003-01-28 | 2008-11-05 | 富士通メディアデバイス株式会社 | 弾性表面波デバイス及びその製造方法 |
JP5686943B2 (ja) * | 2008-09-17 | 2015-03-18 | 太陽誘電株式会社 | 弾性波デバイス及びその製造方法 |
JP5425005B2 (ja) * | 2009-08-19 | 2014-02-26 | 日本電波工業株式会社 | 圧電部品及びその製造方法 |
JP2013145932A (ja) * | 2010-05-07 | 2013-07-25 | Murata Mfg Co Ltd | 弾性表面波装置及びその製造方法 |
WO2013129175A1 (ja) * | 2012-02-29 | 2013-09-06 | 株式会社村田製作所 | 電子部品素子、それを用いた複合モジュールおよび複合モジュールの製造方法 |
-
2011
- 2011-01-19 JP JP2011009302A patent/JP2012151698A/ja active Pending
-
2012
- 2012-01-18 US US13/352,500 patent/US8749114B2/en active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06204352A (ja) * | 1992-12-25 | 1994-07-22 | Ngk Spark Plug Co Ltd | 半導体セラミックパッケージ用基体及び蓋体 |
JPH09162690A (ja) * | 1995-12-07 | 1997-06-20 | Rohm Co Ltd | 弾性表面波素子を有する装置およびその製造方法 |
WO1999005788A1 (fr) * | 1997-07-28 | 1999-02-04 | Kabushiki Kaisha Toshiba | Dispositif de traitement d'ondes acoustiques de surface et son procede de fabrication |
WO2003005577A1 (fr) * | 2001-07-02 | 2003-01-16 | Matsushita Electric Industrial Co., Ltd. | Procede de production de dispositifs de traitement des ondes acoustiques de surface |
JP2004194290A (ja) * | 2002-11-26 | 2004-07-08 | Murata Mfg Co Ltd | 電子部品の製造方法 |
JP2005236159A (ja) * | 2004-02-23 | 2005-09-02 | Mitsubishi Electric Corp | 気密封止パッケージ、ウエハレベル気密封止パッケージ、気密封止パッケージの製造方法、およびウエハレベル気密封止パッケージの製造方法 |
JP2007081555A (ja) * | 2005-09-12 | 2007-03-29 | Kyocera Corp | 弾性表面波装置 |
JP2007149742A (ja) * | 2005-11-24 | 2007-06-14 | Mitsubishi Electric Corp | パッケージおよびそれを用いた電子装置 |
JP2007281245A (ja) * | 2006-04-07 | 2007-10-25 | Mitsubishi Electric Corp | 電子装置 |
JP2010081211A (ja) * | 2008-09-25 | 2010-04-08 | Kyocera Corp | 弾性表面波装置及びその製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014143640A (ja) * | 2013-01-25 | 2014-08-07 | Taiyo Yuden Co Ltd | 弾性波デバイス及びその製造方法 |
US9509276B2 (en) | 2013-01-25 | 2016-11-29 | Taiyo Yuden Co., Ltd. | Acoustic wave device and method of fabricating the same |
WO2015041153A1 (ja) * | 2013-09-20 | 2015-03-26 | 株式会社村田製作所 | 弾性波装置及びその製造方法 |
US10424715B2 (en) | 2013-09-20 | 2019-09-24 | Murata Manufacturing Co., Ltd. | Elastic wave device and manufacturing method for same |
JP2016201780A (ja) * | 2015-04-14 | 2016-12-01 | 太陽誘電株式会社 | 弾性波デバイス |
JPWO2018216486A1 (ja) * | 2017-05-26 | 2020-03-12 | 株式会社村田製作所 | 電子部品およびそれを備えるモジュール |
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