JP2013536572A5 - - Google Patents

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Publication number
JP2013536572A5
JP2013536572A5 JP2013520812A JP2013520812A JP2013536572A5 JP 2013536572 A5 JP2013536572 A5 JP 2013536572A5 JP 2013520812 A JP2013520812 A JP 2013520812A JP 2013520812 A JP2013520812 A JP 2013520812A JP 2013536572 A5 JP2013536572 A5 JP 2013536572A5
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JP
Japan
Prior art keywords
type
doped semiconductor
memory cell
semiconductor base
junctions
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Application number
JP2013520812A
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English (en)
Japanese (ja)
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JP2013536572A (ja
JP5686896B2 (ja
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Priority claimed from US12/838,803 external-priority patent/US8455919B2/en
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Publication of JP2013536572A publication Critical patent/JP2013536572A/ja
Publication of JP2013536572A5 publication Critical patent/JP2013536572A5/ja
Application granted granted Critical
Publication of JP5686896B2 publication Critical patent/JP5686896B2/ja
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JP2013520812A 2010-07-19 2011-07-19 高密度サイリスタ・ランダムアクセスメモリ装置及び方法 Active JP5686896B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/838,803 2010-07-19
US12/838,803 US8455919B2 (en) 2010-07-19 2010-07-19 High density thyristor random access memory device and method
PCT/US2011/044546 WO2012012435A2 (en) 2010-07-19 2011-07-19 High density thyristor random access memory device and method

Publications (3)

Publication Number Publication Date
JP2013536572A JP2013536572A (ja) 2013-09-19
JP2013536572A5 true JP2013536572A5 (enExample) 2014-09-11
JP5686896B2 JP5686896B2 (ja) 2015-03-18

Family

ID=45466254

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013520812A Active JP5686896B2 (ja) 2010-07-19 2011-07-19 高密度サイリスタ・ランダムアクセスメモリ装置及び方法

Country Status (6)

Country Link
US (2) US8455919B2 (enExample)
JP (1) JP5686896B2 (enExample)
KR (1) KR101875677B1 (enExample)
CN (1) CN103098212B (enExample)
TW (1) TWI481015B (enExample)
WO (1) WO2012012435A2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8455919B2 (en) 2010-07-19 2013-06-04 Micron Technology, Inc. High density thyristor random access memory device and method
US8739010B2 (en) * 2010-11-19 2014-05-27 Altera Corporation Memory array with redundant bits and memory element voting circuits
US9510564B2 (en) * 2012-05-22 2016-12-06 Doskocil Manufacturing Company, Inc. Treat dispenser
KR101719944B1 (ko) * 2013-03-04 2017-03-24 신닛테츠스미킨 카부시키카이샤 충격 흡수 부품
WO2015006457A1 (en) * 2013-07-09 2015-01-15 United Technologies Corporation Reinforced plated polymers
TWI572018B (zh) * 2015-10-28 2017-02-21 旺宏電子股份有限公司 記憶體元件及其製作方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7052941B2 (en) * 2003-06-24 2006-05-30 Sang-Yun Lee Method for making a three-dimensional integrated circuit structure
JP2002216482A (ja) * 2000-11-17 2002-08-02 Toshiba Corp 半導体メモリ集積回路
US6906354B2 (en) 2001-06-13 2005-06-14 International Business Machines Corporation T-RAM cell having a buried vertical thyristor and a pseudo-TFT transfer gate and method for fabricating the same
JP2003030980A (ja) * 2001-07-13 2003-01-31 Toshiba Corp 半導体記憶装置
US6686612B1 (en) 2002-10-01 2004-02-03 T-Ram, Inc. Thyristor-based device adapted to inhibit parasitic current
US6953953B1 (en) * 2002-10-01 2005-10-11 T-Ram, Inc. Deep trench isolation for thyristor-based semiconductor device
US6980457B1 (en) 2002-11-06 2005-12-27 T-Ram, Inc. Thyristor-based device having a reduced-resistance contact to a buried emitter region
US7195959B1 (en) * 2004-10-04 2007-03-27 T-Ram Semiconductor, Inc. Thyristor-based semiconductor device and method of fabrication
US7081378B2 (en) 2004-01-05 2006-07-25 Chartered Semiconductor Manufacturing Ltd. Horizontal TRAM and method for the fabrication thereof
US7224002B2 (en) * 2004-05-06 2007-05-29 Micron Technology, Inc. Silicon on insulator read-write non-volatile memory comprising lateral thyristor and trapping layer
JP4696964B2 (ja) 2005-07-15 2011-06-08 ソニー株式会社 メモリ用の半導体装置
JP2007067133A (ja) * 2005-08-31 2007-03-15 Sony Corp 半導体装置
US7655973B2 (en) * 2005-10-31 2010-02-02 Micron Technology, Inc. Recessed channel negative differential resistance-based memory cell
US20090179262A1 (en) 2008-01-16 2009-07-16 Qimonda Ag Floating Body Memory Cell with a Non-Overlapping Gate Electrode
US7750392B2 (en) * 2008-03-03 2010-07-06 Aptina Imaging Corporation Embedded cache memory in image sensors
US8455919B2 (en) 2010-07-19 2013-06-04 Micron Technology, Inc. High density thyristor random access memory device and method

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