JP2013524549A - 結晶性太陽電池上の機能的および光学的グレーデッドＡＲＣ層のための多層ＳｉＮ - Google Patents

結晶性太陽電池上の機能的および光学的グレーデッドＡＲＣ層のための多層ＳｉＮ Download PDF

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JP2013524549A
JP2013524549A JP2013504927A JP2013504927A JP2013524549A JP 2013524549 A JP2013524549 A JP 2013524549A JP 2013504927 A JP2013504927 A JP 2013504927A JP 2013504927 A JP2013504927 A JP 2013504927A JP 2013524549 A JP2013524549 A JP 2013524549A
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sublayer
passivation
solar cell
substrate
bulk
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JP2013524549A5 (cg-RX-API-DMAC7.html
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ドンウォン チェ，
マイケル， ピー． スチュアート，
リー シュ，
ヘマント， ピー． ムンゲカー，
スンホ パク，
ケネス マックウィリアムス，
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
JP2013504927A 2010-04-13 2011-03-31 結晶性太陽電池上の機能的および光学的グレーデッドＡＲＣ層のための多層ＳｉＮ Pending JP2013524549A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US32375510P 2010-04-13 2010-04-13
US61/323,755 2010-04-13
PCT/US2011/030782 WO2011130017A2 (en) 2010-04-13 2011-03-31 Multi-layer sin for functional and optical graded arc layers on crystalline solar cells

Publications (2)

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JP2013524549A true JP2013524549A (ja) 2013-06-17
JP2013524549A5 JP2013524549A5 (cg-RX-API-DMAC7.html) 2014-05-15

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US (1) US20110272024A1 (cg-RX-API-DMAC7.html)
JP (1) JP2013524549A (cg-RX-API-DMAC7.html)
CN (1) CN102870236A (cg-RX-API-DMAC7.html)
DE (1) DE112011101329T5 (cg-RX-API-DMAC7.html)
WO (1) WO2011130017A2 (cg-RX-API-DMAC7.html)

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JP2015220418A (ja) * 2014-05-21 2015-12-07 株式会社島津製作所 薄膜形成装置
JP2019067826A (ja) * 2017-09-28 2019-04-25 キヤノン株式会社 撮像装置およびその製造方法ならびに機器

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US8309446B2 (en) * 2008-07-16 2012-11-13 Applied Materials, Inc. Hybrid heterojunction solar cell fabrication using a doping layer mask
EP2359410A4 (en) 2008-12-10 2014-09-24 Applied Materials Inc IMPROVED VISIBILITY SYSTEM FOR ALIGNMENT OF SCREEN PRINT PATTERNS
KR101807838B1 (ko) * 2012-03-28 2017-12-12 호야 가부시키가이샤 마스크 블랭크용 기판, 다층 반사막 부착 기판, 투과형 마스크 블랭크, 반사형 마스크 블랭크, 투과형 마스크, 반사형 마스크 및 반도체 장치의 제조 방법
US9280151B2 (en) * 2012-05-15 2016-03-08 Wafertech, Llc Recipe management system and method
JP5884911B2 (ja) * 2012-08-09 2016-03-15 信越化学工業株式会社 太陽電池の製造方法
US8610230B1 (en) * 2012-11-01 2013-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. HfO2/SiO2-Si interface improvement for CMOS image sensor
US20140174532A1 (en) * 2012-12-21 2014-06-26 Michael P. Stewart Optimized anti-reflection coating layer for crystalline silicon solar cells
EP3017482A1 (en) * 2013-07-05 2016-05-11 GTAT Corporation Polysilazane coating for photovoltaic cells
CN103746005B (zh) * 2014-01-17 2016-08-17 宁波富星太阳能有限公司 双层氮化硅减反射膜
CN104091839B (zh) * 2014-07-21 2016-09-07 内蒙古日月太阳能科技有限责任公司 一种用于太阳能电池片的减反射膜的制造方法
US10246772B2 (en) 2015-04-01 2019-04-02 Applied Materials, Inc. Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3D NAND memory devices
CN107958862B (zh) * 2016-10-18 2021-11-09 台湾积体电路制造股份有限公司 半导体用治具、半导体的保护层针孔测试用的治具及方法
US11017997B2 (en) * 2017-01-13 2021-05-25 Applied Materials, Inc. Methods and apparatus for low temperature silicon nitride films
CN110235248B (zh) * 2017-04-27 2024-03-26 应用材料公司 用于3d nand应用的低介电常数氧化物和低电阻op堆叠
CN107275190B (zh) * 2017-06-30 2021-01-01 韩华新能源（启东）有限公司 一种在半导体衬底上制备双层氮化硅薄膜的方法
CN111492492A (zh) * 2017-11-30 2020-08-04 京瓷株式会社 太阳能电池元件
DE102018121897A1 (de) 2018-09-07 2020-03-12 Infineon Technologies Ag Halbleitervorrichtung mit einem silizium und stickstoff enthaltenden bereich und herstellungsverfahren
JP2022532943A (ja) * 2019-05-24 2022-07-20 ラム リサーチ コーポレーション 光学プローブを含む電気化学的堆積システム
US20200411342A1 (en) * 2019-06-27 2020-12-31 Applied Materials, Inc. Beamline architecture with integrated plasma processing
US11075308B1 (en) 2020-06-19 2021-07-27 Pharos Materials, Inc. Vanadium-containing electrodes and interconnects to transparent conductors
CN112760614B (zh) * 2020-12-09 2023-02-28 晋能清洁能源科技股份公司 一种多晶pecvd镀膜均匀性优化的方法
CN115838915B (zh) * 2022-11-24 2025-07-08 普乐新能源科技(泰兴)有限公司 一种单晶硅电池pecvd镀膜工艺
CN118039745B (zh) * 2024-04-11 2025-04-08 福建金石能源有限公司 一种背接触电池的制作方法

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JPH06232437A (ja) * 1992-12-07 1994-08-19 Fuji Electric Co Ltd 可撓性薄膜光電変換素子
JPH09246180A (ja) * 1995-12-05 1997-09-19 Applied Materials Inc アンチレフレクティブコーティング及びその堆積の方法
JP2006128258A (ja) * 2004-10-27 2006-05-18 Sharp Corp 太陽電池および太陽電池の製造方法
WO2008127920A2 (en) * 2007-04-12 2008-10-23 Applied Materials, Inc. Silicon nitride passivation for a solar cell

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KR100974220B1 (ko) * 2006-12-13 2010-08-06 엘지전자 주식회사 태양전지
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US8198528B2 (en) * 2007-12-14 2012-06-12 Sunpower Corporation Anti-reflective coating with high optical absorption layer for backside contact solar cells
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Publication number Priority date Publication date Assignee Title
JPH06232437A (ja) * 1992-12-07 1994-08-19 Fuji Electric Co Ltd 可撓性薄膜光電変換素子
JPH09246180A (ja) * 1995-12-05 1997-09-19 Applied Materials Inc アンチレフレクティブコーティング及びその堆積の方法
JP2006128258A (ja) * 2004-10-27 2006-05-18 Sharp Corp 太陽電池および太陽電池の製造方法
WO2008127920A2 (en) * 2007-04-12 2008-10-23 Applied Materials, Inc. Silicon nitride passivation for a solar cell

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015220418A (ja) * 2014-05-21 2015-12-07 株式会社島津製作所 薄膜形成装置
JP2019067826A (ja) * 2017-09-28 2019-04-25 キヤノン株式会社 撮像装置およびその製造方法ならびに機器
JP7076971B2 (ja) 2017-09-28 2022-05-30 キヤノン株式会社 撮像装置およびその製造方法ならびに機器

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WO2011130017A3 (en) 2012-01-19
US20110272024A1 (en) 2011-11-10
DE112011101329T5 (de) 2013-02-07
CN102870236A (zh) 2013-01-09
WO2011130017A2 (en) 2011-10-20

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