JP2013524549A5 - - Google Patents

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Publication number
JP2013524549A5
JP2013524549A5 JP2013504927A JP2013504927A JP2013524549A5 JP 2013524549 A5 JP2013524549 A5 JP 2013524549A5 JP 2013504927 A JP2013504927 A JP 2013504927A JP 2013504927 A JP2013504927 A JP 2013504927A JP 2013524549 A5 JP2013524549 A5 JP 2013524549A5
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JP
Japan
Prior art keywords
sublayer
solar cell
passivation
interface
bulk
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JP2013504927A
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English (en)
Japanese (ja)
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JP2013524549A (ja
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Priority claimed from PCT/US2011/030782 external-priority patent/WO2011130017A2/en
Publication of JP2013524549A publication Critical patent/JP2013524549A/ja
Publication of JP2013524549A5 publication Critical patent/JP2013524549A5/ja
Pending legal-status Critical Current

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JP2013504927A 2010-04-13 2011-03-31 結晶性太陽電池上の機能的および光学的グレーデッドＡＲＣ層のための多層ＳｉＮ Pending JP2013524549A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US32375510P 2010-04-13 2010-04-13
US61/323,755 2010-04-13
PCT/US2011/030782 WO2011130017A2 (en) 2010-04-13 2011-03-31 Multi-layer sin for functional and optical graded arc layers on crystalline solar cells

Publications (2)

Publication Number Publication Date
JP2013524549A JP2013524549A (ja) 2013-06-17
JP2013524549A5 true JP2013524549A5 (cg-RX-API-DMAC7.html) 2014-05-15

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JP2013504927A Pending JP2013524549A (ja) 2010-04-13 2011-03-31 結晶性太陽電池上の機能的および光学的グレーデッドＡＲＣ層のための多層ＳｉＮ

Country Status (5)

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US (1) US20110272024A1 (cg-RX-API-DMAC7.html)
JP (1) JP2013524549A (cg-RX-API-DMAC7.html)
CN (1) CN102870236A (cg-RX-API-DMAC7.html)
DE (1) DE112011101329T5 (cg-RX-API-DMAC7.html)
WO (1) WO2011130017A2 (cg-RX-API-DMAC7.html)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8309446B2 (en) * 2008-07-16 2012-11-13 Applied Materials, Inc. Hybrid heterojunction solar cell fabrication using a doping layer mask
EP2359410A4 (en) 2008-12-10 2014-09-24 Applied Materials Inc IMPROVED VISIBILITY SYSTEM FOR ALIGNMENT OF SCREEN PRINT PATTERNS
KR101807838B1 (ko) * 2012-03-28 2017-12-12 호야 가부시키가이샤 마스크 블랭크용 기판, 다층 반사막 부착 기판, 투과형 마스크 블랭크, 반사형 마스크 블랭크, 투과형 마스크, 반사형 마스크 및 반도체 장치의 제조 방법
US9280151B2 (en) * 2012-05-15 2016-03-08 Wafertech, Llc Recipe management system and method
JP5884911B2 (ja) * 2012-08-09 2016-03-15 信越化学工業株式会社 太陽電池の製造方法
US8610230B1 (en) * 2012-11-01 2013-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. HfO2/SiO2-Si interface improvement for CMOS image sensor
US20140174532A1 (en) * 2012-12-21 2014-06-26 Michael P. Stewart Optimized anti-reflection coating layer for crystalline silicon solar cells
EP3017482A1 (en) * 2013-07-05 2016-05-11 GTAT Corporation Polysilazane coating for photovoltaic cells
CN103746005B (zh) * 2014-01-17 2016-08-17 宁波富星太阳能有限公司 双层氮化硅减反射膜
JP6194850B2 (ja) * 2014-05-21 2017-09-13 株式会社島津製作所 薄膜形成装置
CN104091839B (zh) * 2014-07-21 2016-09-07 内蒙古日月太阳能科技有限责任公司 一种用于太阳能电池片的减反射膜的制造方法
US10246772B2 (en) 2015-04-01 2019-04-02 Applied Materials, Inc. Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3D NAND memory devices
CN107958862B (zh) * 2016-10-18 2021-11-09 台湾积体电路制造股份有限公司 半导体用治具、半导体的保护层针孔测试用的治具及方法
US11017997B2 (en) * 2017-01-13 2021-05-25 Applied Materials, Inc. Methods and apparatus for low temperature silicon nitride films
CN110235248B (zh) * 2017-04-27 2024-03-26 应用材料公司 用于3d nand应用的低介电常数氧化物和低电阻op堆叠
CN107275190B (zh) * 2017-06-30 2021-01-01 韩华新能源（启东）有限公司 一种在半导体衬底上制备双层氮化硅薄膜的方法
JP7076971B2 (ja) * 2017-09-28 2022-05-30 キヤノン株式会社 撮像装置およびその製造方法ならびに機器
CN111492492A (zh) * 2017-11-30 2020-08-04 京瓷株式会社 太阳能电池元件
DE102018121897A1 (de) 2018-09-07 2020-03-12 Infineon Technologies Ag Halbleitervorrichtung mit einem silizium und stickstoff enthaltenden bereich und herstellungsverfahren
JP2022532943A (ja) * 2019-05-24 2022-07-20 ラム リサーチ コーポレーション 光学プローブを含む電気化学的堆積システム
US20200411342A1 (en) * 2019-06-27 2020-12-31 Applied Materials, Inc. Beamline architecture with integrated plasma processing
US11075308B1 (en) 2020-06-19 2021-07-27 Pharos Materials, Inc. Vanadium-containing electrodes and interconnects to transparent conductors
CN112760614B (zh) * 2020-12-09 2023-02-28 晋能清洁能源科技股份公司 一种多晶pecvd镀膜均匀性优化的方法
CN115838915B (zh) * 2022-11-24 2025-07-08 普乐新能源科技(泰兴)有限公司 一种单晶硅电池pecvd镀膜工艺
CN118039745B (zh) * 2024-04-11 2025-04-08 福建金石能源有限公司 一种背接触电池的制作方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3536299A1 (de) * 1985-10-11 1987-04-16 Nukem Gmbh Solarzelle aus silizium
US4751191A (en) * 1987-07-08 1988-06-14 Mobil Solar Energy Corporation Method of fabricating solar cells with silicon nitride coating
JPH06232437A (ja) * 1992-12-07 1994-08-19 Fuji Electric Co Ltd 可撓性薄膜光電変換素子
US5968324A (en) * 1995-12-05 1999-10-19 Applied Materials, Inc. Method and apparatus for depositing antireflective coating
JP2002270879A (ja) * 2001-03-14 2002-09-20 Mitsubishi Electric Corp 半導体装置
KR100852700B1 (ko) * 2002-04-03 2008-08-19 삼성에스디아이 주식회사 고효율 태양전지 및 그 제조 방법
JP4186725B2 (ja) * 2003-06-24 2008-11-26 トヨタ自動車株式会社 光電変換素子
US7335555B2 (en) * 2004-02-05 2008-02-26 Advent Solar, Inc. Buried-contact solar cells with self-doping contacts
JP4540447B2 (ja) * 2004-10-27 2010-09-08 シャープ株式会社 太陽電池および太陽電池の製造方法
KR100900443B1 (ko) * 2006-11-20 2009-06-01 엘지전자 주식회사 태양전지 및 그의 제조방법
KR100974220B1 (ko) * 2006-12-13 2010-08-06 엘지전자 주식회사 태양전지
US8733279B2 (en) * 2007-02-27 2014-05-27 Applied Materials, Inc. PECVD process chamber backing plate reinforcement
US7993700B2 (en) * 2007-03-01 2011-08-09 Applied Materials, Inc. Silicon nitride passivation for a solar cell
JP2010521824A (ja) * 2007-03-16 2010-06-24 ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド 太陽電池
US8198528B2 (en) * 2007-12-14 2012-06-12 Sunpower Corporation Anti-reflective coating with high optical absorption layer for backside contact solar cells
US7727866B2 (en) * 2008-03-05 2010-06-01 Varian Semiconductor Equipment Associates, Inc. Use of chained implants in solar cells
EP2195853B1 (en) * 2008-04-17 2015-12-16 LG Electronics Inc. Solar cell and method of manufacturing the same

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