JP2013524505A - 太陽電池用の格子整合可能な合金 - Google Patents

太陽電池用の格子整合可能な合金 Download PDF

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JP2013524505A
JP2013524505A JP2013502560A JP2013502560A JP2013524505A JP 2013524505 A JP2013524505 A JP 2013524505A JP 2013502560 A JP2013502560 A JP 2013502560A JP 2013502560 A JP2013502560 A JP 2013502560A JP 2013524505 A JP2013524505 A JP 2013524505A
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subcell
solar cell
gaas
junction
subcells
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JP2013524505A5 (ja
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エリザベス ジョーンズ，レベッカ
ユエン，ホーマン・バーナード
リウ，ティン
ミスラ，プラノブ
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ソーラー・ジャンクション・コーポレイション
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Abstract

太陽電池のサブセル用の、少なくとも０．９ｅＶのバンドギャップを有する合金組成物、すなわち、低含有のアンチモン（Ｓｂ）と、高含有のインジウム（Ｉｎ）と、高含有の窒素（Ｎ）によるＧａ1-XＩｎXＮYＡｓ1-X-ZＳｂZを提供し、これにより、多接合太陽電池用のＧａＩｎＮＡｓＳｂサブセルにおいて、ＧａＡｓおよびＧｅ基板への実質的な格子整合を実現し、また、高い短絡電流と高い開路電圧の両方を提供する。Ｇａ1-XＩｎXＮYＡｓ1-Y-ZＳｂZの組成範囲は、０．０７≦ｘ≦０．１８、０．０２５≦ｙ≦０．０４、０．００１≦ｚ≦０．０３である。
【選択図】図１Ａ

Description

関連出願の相互参照
該当なし
［連邦政府の支援による研究開発の下で行われた発明の権利に関する声明］
該当なし
［コンパクトディスクで提出される「配列表」、表、またはコンピュータプログラムリストの付録への参照］
該当なし
本発明は、多接合太陽電池に関し、特に、ＩＩＩ‐Ｖ半導体合金からなる高効率太陽電池に関するものである。
主としてＩＩＩ‐Ｖ半導体合金で構成された多接合太陽電池によって、他のタイプの光起電材料の効率を超える太陽電池効率が得られることが知られている。そのような合金は、標準的な周期表の列ＩＩＩとＶから選ばれた元素の組み合わせであり、それらを以下では通常の化学記号、名称、および略称によって識別する。（当業者であれば、特にそれらの列を参照することなく、分類によって半導体物性のそのような群を識別可能である。）これらの太陽電池は、その高効率により、地上用集光型太陽光発電システムや、宇宙空間で作動するように設計されたシステムにとって、魅力的なものとなっている。数百サン（ｓｕｎ）に相当する集光条件下で４０％を超える効率を持つ多接合太陽電池が報告されている。知られている最も高効率のデバイスは、３つのサブセルを有し、各サブセルは、機能ｐ‐ｎ接合と、前面電界層および裏面電界層といった他の層とからなる。これらのサブセルは、トンネル接合によって接続されており、上位層は下の基板に格子整合したものであるか、またはメタモルフィック層の上に成長させたものであるか、いずれかである。格子整合したデバイスおよび設計は、信頼性が実証されており、また、いくつかの材料の格子定数の違いを調整するために比較的厚いバッファ層を必要とするメタモルフィック太陽電池に比べて使用する半導体材料が少ないので、望ましい。 “ＧａＩｎＮＡｓＳｂ Ｓｏｌａｒ Ｃｅｌｌｓ Ｇｒｏｗｎ ｂｙ Ｍｏｌｅｃｕｌａｒ Ｂｅａｍ Ｅｐｉｔａｘｙ（分子線エピタキシー法により成長させたＧａＩｎＮＡｓＳｂ太陽電池）”という名称の特許文献１に、より詳細に記載されているように、ＧａＩｎＮＡｓＳｂ材料で構成された層によって、約１．０ｅＶのバンドギャップを有する第３の接合を形成することは、多接合セルの効率を高めるための有望なアプローチを提供する。なお、上記出願は、参照により本明細書に組み込まれる。しかしながら、上記出願に記載されているセルについては、改良が検討されるべきである。
米国特許出願第１２／２１７８１８号（米国特許出願公開第２００９／００１４０６１号）
Ｊ．Ｆ．Ｇｅｉｓｚ等著 「Ｉｎｖｅｒｔｅｄ ＧａＩｎＰ／（Ｉｎ）ＧａＡｓ／ＩｎＧａＡｓ ｔｒｉｐｌｅ‐ｊｕｎｃｔｉｏｎ ｓｏｌａｒ ｃｅｌｌｓ ｗｉｔｈ ｌｏｗ‐ｓｔｒｅｓｓ ｍｅｔａｍｏｒｐｈｉｃ ｂｏｔｔｏｍ ｊｕｎｃｔｉｏｎｓ（低応力のメタモルフィック下部接合を有する反転ＧａＩｎＰ／（Ｉｎ）ＧａＡｓ／ＩｎＧａＡｓの３接合太陽電池）」 Ｐｒｏｃｅｅｄｉｎｇｓ ｏｆ ｔｈｅ ３３rd ＩＥＥＥ ＰＶＳＣ Ｐｈｏｔｏｖｏｌｔａｉｃｓ Ｓｐｅｃｉａｌｉｓｔｓ Ｃｏｎｆｅｒｅｎｃｅ，２００８年 Ｓ．Ｒ．Ｋｕｒｔｚ，Ｄ．Ｍｙｅｒｓ，Ｊ．Ｍ．Ｏｌｓｏｎ著 「Ｐｒｏｊｅｃｔｅｄ Ｐｅｒｆｏｒｍａｎｃｅ ｏｆ Ｔｈｒｅｅ ａｎｄ Ｆｏｕｒ‐Ｊｕｎｃｔｉｏｎ Ｄｅｖｉｃｅｓ Ｕｓｉｎｇ ＧａＡｓ ａｎｄ ＧａＩｎＰ（ＧａＡｓとＧａＩｎＰを用いる３接合および４接合デバイスの予測性能）」 ２６ｔｈ ＩＥＥＥ Ｐｈｏｔｏｖｏｌｔａｉｃｓ Ｓｐｅｃｉａｌｉｓｔｓ Ｃｏｎｆｅｒｅｎｃｅ，１９９７年，８７５〜８７８頁 Ａ．Ｊ．Ｐｔａｋ等著 Ｊｏｕｒｎａｌ ｏｆ Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ，９８巻，２００５年，０９４５０１頁 Ｐｔａｋ等著 「Ｅｆｆｅｃｔｓ ｏｆ ｔｅｍｐｅｒａｔｕｒｅ，ｎｉｔｒｏｇｅｎ ｉｏｎ，ａｎｄ ａｎｔｉｍｏｎｙ ｏｎ ｗｉｄｅ ｄｅｐｌｅｔｉｏｎ ｗｉｄｔｈ ＧａＩｎＮＡｓ（空乏幅が広いＧａＩｎＮＡｓに対する、温度、窒素イオン、アンチモンの影響）」 Ｊｏｕｒｎａｌ ｏｆ Ｖａｃｕｕｍ Ｓｃｉｅｎｃｅ Ｔｅｃｈｎｏｌｏｇｙ Ｂ，２５巻（３号），２００７年 ５月／６月，９５５〜９５９頁 Ｄ．Ｂ．Ｊａｃｋｒｅｌ等著 Ｊｏｕｒｎａｌ ｏｆ Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ，１０１巻，１１４９１６頁，２００７年 Ｈ．Ｃｏｔａｌ等著 Ｅｎｅｒｇｙ ａｎｄ Ｅｎｖｉｒｏｎｍｅｎｔａｌ Ｓｃｉｅｎｃｅ，２巻，１７４頁，２００９年
知られている最も高効率の格子整合太陽電池は、一般に、ゲルマニウム（Ｇｅ）基板の上にエピタキシャル成長させた３つの機能ｐ‐ｎ接合すなわちサブセルからなるモノリシック・スタックを含んでいる。上部サブセルは、（Ａｌ）ＧａＩｎＰで構成されており、中間のものは（Ｉｎ）ＧａＡｓで構成されており、下部接合はＧｅ基板を含むものであった。（上記のＩＩＩ‐Ｖ合金の名称において、構成元素を括弧内に示しているのは、その特定の元素がゼロとなり得る可変条件を表している。）この構造は、非特許文献１で報告されているように、下部接合が上の２つの接合のおよそ２倍の短絡電流を生成し得るという点で、効率にとって最適ではない。電流整合として知られる設計特性として、正味電流はスタック全体を通して均一でなければならないので、この余分な電流能力は無駄になる。
上記の特許文献１の開示では、下部のＧｅ接合を、より高い電圧を発生させる異なる材料で構成された接合で置き換えることで、上述の構造よりも高い効率を有する３接合太陽電池を形成するために、１．０ｅＶに近いバンドキャップを有してＧｅまたはＧａＡｓに実質的に格子整合した材料を使用し得ることが示された。
また、スペクトルの全部の部分が０．７ｅＶ（ゲルマニウムのバンドギャップ）と１．１ｅＶ（〜１ｅＶの層のバンドギャップ範囲の上限）との間にあることを活かして、この１ｅＶ材料の使用を、第４の接合と考える可能性も示唆されている。例えば、非特許文献２を参照することができる。Ｇａ1-XＩｎXＮYＡｓ1-Yは、そのような１ｅＶ材料として確認されているが、例えば非特許文献３を参照すると、他のサブセルとの整合のために十分に高い電流が実現されてはいない。これは、少数キャリア拡散距離が小さいことに起因しており、これが有効な光キャリア収集を妨げる。ガリウム、インジウム、窒素、ヒ素、および様々な濃度のアンチモン（ＧａＩｎＮＡｓＳｂ）からなる太陽電池サブセル設計について研究が行われ、これによって、表面粗さを減少させ、アニーリングが不要である、より高い基板温度での成長を可能にするために、アンチモンが有用であるという結果が報告されているが、しかし、アンチモンは、たとえ低濃度であっても、適切なデバイス性能を損なうものとして回避することが不可欠であるということが研究者によって報告された。非特許文献４を参照することができる。この論文で報告されているデバイスは、多接合太陽電池に組み込むためには、短絡電流があまりにも低すぎる。それでも、０．０５≦ｘ≦０．０７、０．０１≦ｙ≦０．０２、０．０２≦ｚ≦０．０６として、Ｇａ1-XＩｎXＮYＡｓ1-Y-ZＳｂZであれば、多接合太陽電池に組み込むために十分な電流を提供することができ、約１ｅＶのバンドキャップを有して格子整合した材料を生み出すのに使用可能であることが知られている。しかしながら、この材料を含むサブセルにより発生される電圧は、１サンの照射の下で０．３０Ｖを超えてはいない。非特許文献５を参照することができる。このように、この材料を下部サブセルとして有する３接合太陽電池は、約０．２５Ｖの開路電圧を発生させるＧｅの下部サブセルを有する類似の３接合太陽電池に対して、わずかな改良にしかならないと予測されている。非特許文献６を参照することができる。必要なのは、０．３０Ｖより大きい開路電圧と、（Ａｌ）ＩｎＧａＰおよび（Ｉｎ）ＧａＡｓのサブセルに整合するのに十分な電流を発生させる、１ｅＶに近いバンドキャップを有してＧｅおよびＧａＡｓに格子整合した材料である。このような材料は、４つ以上の接合を有する高効率太陽電池におけるサブセルとしても効果的であろう。
本発明によれば、少なくとも０．９ｅＶのバンドギャップを有する合金組成物、すなわち、従来のＧａＩｎＮＡｓＳｂ合金と比較して、低含有のアンチモン（Ｓｂ）と、高含有のインジウム（Ｉｎ）と、高含有の窒素（Ｎ）によるＧａ1-XＩｎXＮYＡｓ1-Y-ZＳｂZを提供し、これにより、多接合太陽電池での使用に適したＧａＩｎＮＡｓＳｂサブセルにおいて、ＧａＡｓおよびＧｅ基板への実質的な格子整合を実現し、また、高い短絡電流と高い開路電圧の両方を提供する。Ｇａ1-XＩｎXＮYＡｓ1-Y-ZＳｂZの組成範囲は、０．０７≦ｘ≦０．１８、０．０２５≦ｙ≦０．０４、０．００１≦ｚ≦０．０３である。これらの組成範囲は、ＧａＩｎＮＡｓＳｂにおいて、従来の教示よりも高い割合のＩｎおよびＮを採用しており、ＧａＩｎＮＡｓＳｂサブセルの対象範囲である０．９〜１．１ｅＶの範囲で設計調整可能なバンドギャップを有するサブセルの形成を可能にしている。この組成範囲の合金を、以下では、“低アンチモン‐高インジウム‐高窒素のＧａＩｎＮＡｓＳｂ”合金と表記する。このような合金によるサブセルは、当業者に周知の技法を用いて、分子線エピタキシー法（ＭＢＥ：Ｍｏｌｅｃｕｌａｒ Ｂｅａｍ Ｅｐｉｔａｘｙ）によって成長させることが可能であり、また、有機金属化学気相成長法（ＭＯＣＶＤ：ＭｅｔａｌｌｏＯｒｇａｎｉｃ Ｃｈｅｍｉｃａｌ Ｖａｐｏｒ Ｄｅｐｏｓｉｔｉｏｎ）によって成長させることができるはずである。
本明細書に記載の発明は、特許文献１に記載されている研究のさらなる改良を反映するものであり、元素の具体的範囲、すなわち、開示された太陽電池の性能を大幅に向上させるＧａＩｎＮＡｓＳｂにおけるいくつかの元素の具体的な合金配合の発見と特定を含むものである。
本発明は、添付の図面に関連する以下の詳細な説明を参照することによって、よりよく理解されるであろう。
図１Ａは、本発明を組み込んだ３接合太陽電池の概略断面図である。
図１Ｂは、本発明を組み込んだ４接合太陽電池の概略断面図である。
図２Ａは、本発明によるＧａＩｎＮＡｓＳｂサブセルの概略断面図である。
図２Ｂは、一例のＧａＩｎＮＡｓＳｂサブセルの詳細を示す概略断面図である。
図３は、比較のために、異なる合金材料から形成されたサブセルの効率対バンドギャップ・エネルギーを示すグラフである。
図４は、比較のために、異なる合金材料から形成されたサブセルの短絡電流（ＪSC）と開路電圧（ＶOC）を示すプロットである。
図５は、本発明によるサブセルを組み込んだ３接合太陽電池について、１サンのＡＭ１．５Ｄ照射の下での光電流を電圧の関数として示すグラフである。
図６は、本発明によるサブセルを組み込んだ３接合太陽電池について、５２３サンに相当するＡＭ１．５Ｄ照射の下での光電流を電圧の関数として示すグラフである。
図７は、基板により膜に与えられる歪みによって区別される、低Ｓｂ‐高Ｉｎ‐高ＮのＧａＩｎＮＡｓＳｂサブセルの短絡電流（ＪSC）と開路電圧（ＶOC）のグラフである。
図１Ａは、本発明による３接合太陽電池１０の一例を示す概略断面図であり、Ｇｅ、ＧａＡｓまたは他の適合する基板１４に隣接する低Ｓｂ‐高Ｉｎ‐高ＮのＧａＩｎＮＡｓＳｂサブセル１２と、（Ａｌ）ＩｎＧａＰの上部サブセル１６、および（Ｉｎ）ＧａＡｓを用いた中間サブセル１８で、基本的に構成されている。サブセル１６と１８の間には、トンネル接合２０があり、サブセル１８と１２の間には、トンネル接合２２がある。サブセル１２、１６、１８の各々は、いくつかの関連する層を含んでおり、それには、前面電界および裏面電界、エミッタおよびベースが含まれる。指定されたサブセル材料（例えば、（Ｉｎ）ＧａＡｓ）はベース層を成すものであり、他の層はそれで形成されていても、それで形成されていなくてもよい。
低Ｓｂ‐高Ｉｎ‐高ＮのＧａＩｎＮＡｓＳｂサブセルは、本発明の趣旨および範囲から逸脱することなく、４つ以上の接合を有する多接合太陽電池に組み込むこともできる。図１Ｂは、そのような４接合太陽電池１００の１つを示しており、特定の低Ｓｂ‐高Ｉｎ‐高ＮのＧａＩｎＮＡｓＳｂサブセル１２を第３の接合として有し、さらに（Ａｌ）ＩｎＧａＰの上部サブセル１６、（Ｉｎ）ＧａＡｓの第２のサブセル１８、Ｇｅの下部サブセル１４０を有しており、また、下部サブセルはゲルマニウム（Ｇｅ）基板に組み込まれている。サブセル１６、１８、１２、１４０の各々は、それぞれのトンネル接合２０、２２、２４によって分離されおり、サブセル１６、１８、１２、１４０の各々は、いくつかの関連する層を含むことができ、それには、オプションの前面電界および裏面電界と、エミッタおよびベースが含まれる。指定されたサブセル材料（例えば、（Ｉｎ）ＧａＡｓ）はベース層を成すものであり、他の層はそれで形成されていても、それで形成されていなくてもよい。
さらなる図示として、図２Ａは、本発明によるＧａＩｎＮＡｓＳｂサブセル１２のより詳細な概略断面図である。低Ｓｂ‐高Ｉｎ‐高ＮのＧａＩｎＮＡｓＳｂサブセル１２は、このように、サブセル１２において、低Ｓｂ‐高Ｉｎ‐高ＮのＧａＩｎＮＡｓＳｂをベース層２２０として使用していることによって特徴付けられる。ＧａＩｎＮＡｓＳｂサブセル１２の他の構成要素は、エミッタ２６、オプションの前面電界２８および裏面電界３０を含み、これらは、ＧａＩｎＮＡｓ（Ｓｂ）、（Ｉｎ）（Ａｌ）ＧａＡｓ、（Ａｌ）ＩｎＧａＰ、またはＧｅを例として含むＩＩＩ‐Ｖ合金であることが好ましい。低Ｓｂ‐高Ｉｎ‐高ＮのＧａＩｎＮＡｓＳｂベース２２０は、ｐ型またはｎ型のいずれかとすることができ、エミッタ２６はその反対の型とされる。
高Ｉｎ‐高ＮのＧａＩｎＮＡｓＳｂサブセルの性能に対するＳｂの影響を特定するため、図２Ｂに示す構造タイプ（１２）の様々なサブセルについて研究を行った。図２Ｂは、より包括的な図２Ａの構造１２の、代表例である。Ｓｂ無しの、低Ｓｂ（０．００１≦ｚ≦０．０３）の、そして高Ｓｂ（０．０３≦ｚ≦０．０６）のベース層２２０を、分子線エピタキシー法により成長させ、ＧａＡｓ基板（図示せず）に実質的に格子整合させた。これらの合金組成は、二次イオン質量分析法により確認した。サブセル１２は、熱アニールが施され、一般的に知られている太陽電池処理により処理され、そして、ＧａＡｓのバンドギャップを超える光をすべて遮断するフィルタの下で、ＡＭ１．５Ｄスペクトル（１サン）で測定された。このフィルタは、一般にＧａＩｎＮＡｓＳｂサブセル１２が、多接合スタックにおいて（Ｉｎ）ＧａＡｓサブセルの下にあることによって（例えば、図１Ａおよび図１Ｂ）、より高いエネルギーの光がサブセル１２に到達しないという理由で、適切であった。
図３は、異なる割合のＳｂで成長させたサブセル１２によって得られる効率を、それらのバンドギャップの関数として示している。インジウムと窒素の濃度は、それぞれ、０．０７〜０．１８の範囲と、０．０２５〜０．０４の範囲であった。（三角で表される）低Ｓｂ‐高Ｉｎ‐高ＮのＧａＩｎＮＡｓＳｂサブセルは、（ひし形と四角で表される）他の２つの候補よりも一貫して高いサブセル効率であることが分かる。これは、低Ｓｂ‐高Ｉｎ‐高ＮのＧａＩｎＮＡｓＳｂデバイスにおける高電圧と高電流の能力の組み合わせによるものである（図４を参照）。図４で分かるように、Ｓｂが低濃度と高濃度のデバイスは、両方とも、高効率の（Ａｌ）ＩｎＧａＰサブセルおよび（Ｉｎ）ＧａＡｓサブセルと整合するのに十分な（フィルタリングされたＡＭ１．５Ｄスペクトルの下で１３ｍＡ／ｃｍ2より大きい）短絡電流を有しており、このため、一般的な３接合または４接合太陽電池１０、１００において、セル全体を流れる総電流を低減させることなく、それらを用いることができる。このような電流整合は、高効率のためには不可欠である。Ｓｂ無しのデバイスは、その高い開路電圧に起因してサブセル効率が比較的高いが、図４に示すように、その短絡電流は、高効率多接合太陽電池用としては低すぎる。
また、従来より他の合金組成物について報告されているように、Ｓｂが電圧に悪影響を及ぼすことも、図４で確認される。しかしながら、従来より他の合金組成物について報告されていることとは対照的に、アンチモンの添加によって短絡電流を低減させることはない。低Ｓｂ型サブセルは、高Ｓｂ型サブセルに比べて、およそ１００ｍＶ高い開路電圧を有している。このような改良の効果を示すこととして、３．１Ｖの開路電圧を有する３接合太陽電池１０は、３．０Ｖの開路電圧を有する他の同等のセルと比較して、３．３％高い相対効率を有することが判明している。このように、ＧａＩｎＮＡｓ（Ｓｂ）太陽電池にＳｂを含むことは、高効率太陽電池用に十分な電流を発生させるために必要であるが、低Ｓｂ（０．１〜３％）を用いることによってのみ、高電圧と高電流の両方を実現することができる。
圧縮歪みによって、低Ｓｂ‐高Ｉｎ‐高ＮのＧａＩｎＮＡｓＳｂサブセル１０、１００の開路電圧は向上する。より具体的には、完全緩和のときにＧａＡｓまたはＧｅ基板の格子定数よりも大きい（０．５％以下の範囲で、より大きい）格子定数を有する低Ｓｂ‐高Ｉｎ‐高ＮのＧａＩｎＮＡｓＳｂ層２２０は、この場合、そのような基板上に仮像的に成長させる際に圧縮歪みがかけられる。それらは、同様に、より小さい完全緩和格子定数を持つ層よりも優れたデバイス性能を（引張歪みの下で）与える。
図７は、圧縮歪み（三角）と引張歪み（ひし形）の下でＧａＡｓ基板上に成長させた低Ｓｂ‐高Ｉｎ‐高ＮのＧａＩｎＮＡｓＳｂサブセルの短絡電流と開路電圧を示している。圧縮歪み下のサブセルは、引張歪み下のものよりも開路電圧が一貫して高いことが分かる。
低Ｓｂ‐高Ｉｎ‐高Ｎの圧縮歪みＧａＩｎＮＡｓＳｂサブセルは、高効率多接合太陽電池に良好に組み込まれた。図５は、１サンに相当するＡＭ１．５Ｄ照射の下での、図１Ａの構造の３接合太陽電池の電流‐電圧曲線を示している。このデバイスの効率は、３０．５％である。図６は、５２３サンに相当する集光条件下で３９．２％の効率で作動する３接合太陽電池の電流‐電圧曲線を示している。
本発明について、具体的な実施形態を参照して説明を行った。その他の実施形態は、当業者には明らかであろう。よって、本発明は、添付の請求項に示すこと以外は、限定されるものではない。

Claims (9)

  1. 基板に実質的に格子整合するのに適した合金組成物であって、
    多接合太陽電池の選択されたサブセルで使用するため、少なくとも０．９ｅＶのバンドギャップを実現するように、低含有のアンチモン（Ｓｂ）と、高含有のインジウム（Ｉｎ）と、高含有の窒素（Ｎ）によるＧａ1-XＩｎXＮYＡｓ1-Y-ZＳｂZを含む、組成物。
  2. 隣接する基板は、ＧａＡｓおよびＧｅ族から選択される、請求項１に記載の組成物。
  3. Ｇａ1-XＩｎXＮYＡｓ1-Y-ZＳｂZの組成範囲は、０．０７≦ｘ≦０．１８、０．０２５≦ｙ≦０．０４、０．００１≦ｚ≦０．０３である、請求項１に記載の組成物。
  4. 少なくとも０．９ｅＶのバンドギャップを実現するように、低含有のアンチモン（Ｓｂ）と、高含有のインジウム（Ｉｎ）と、高含有の窒素（Ｎ）によるＧａ1-XＩｎXＮYＡｓ1-Y-ZＳｂZを含むサブセルを少なくとも１つ備える、多接合太陽電池。
  5. 隣接する基板は、ＧａＡｓおよびＧｅ族から選択される、請求項４に記載の多接合太陽電池。
  6. Ｇａ1-XＩｎXＮYＡｓ1-Y-ZＳｂZの組成範囲は、０．０７≦ｘ≦０．１８、０．０２５≦ｙ≦０．０４、０．００１≦ｚ≦０．０３である、請求項４に記載の多接合太陽電池。
  7. 多接合太陽電池を製造する方法であって、
    少なくとも０．９ｅＶのバンドギャップを実現するように選択された組成で、低含有のアンチモン（Ｓｂ）と、高含有のインジウム（Ｉｎ）と、高含有の窒素（Ｎ）によるＧａ1-XＩｎXＮYＡｓ1-Y-ZＳｂZの合金の第１のサブセルを形成することと、
    多接合太陽電池を形成するため、前記第１のサブセルを、少なくとも１つの隣接するサブセルと接合させることと、を含む方法。
  8. Ｇａ1-XＩｎXＮYＡｓ1-Y-ZＳｂZの組成範囲は、０．０７≦ｘ≦０．１８、０．０２５≦ｙ≦０．０４、０．００１≦ｚ≦０．０３である、請求項７に記載の方法。
  9. 前記Ｇａ1-XＩｎXＮYＡｓ1-Y-ZＳｂZサブセルは、ＧａＡｓおよびＧｅ族から選択された基板に実質的に格子整合している、請求項７に記載の方法。
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