CN203707143U - 多结太阳能电池 - Google Patents

多结太阳能电池 Download PDF

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CN203707143U
CN203707143U CN201090001501.7U CN201090001501U CN203707143U CN 203707143 U CN203707143 U CN 203707143U CN 201090001501 U CN201090001501 U CN 201090001501U CN 203707143 U CN203707143 U CN 203707143U
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battery
solar cell
gainnassb
substrate
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丽贝卡·伊丽莎白·琼斯
侯曼·伯纳德·禺恩
刘楟
普拉诺·米萨
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Alei Photonics
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Solar Junction Corp
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Abstract

本实用新型提供了一种多结太阳能电池，其包括第一子电池、第二子电池、GaInNAsSb子电池和基底。GaInNAsSb子电池与基底相邻，并且依次包括：前表面场层、发射体层、GaInNAsSb基座层以及背表面场层。通过本实用新型的多结太阳能电池，可以不需要相对厚的缓冲层来适应各种材料的晶格常数的差异。

Description

多结太阳能电池
本申请是于2010年3月29日提交的第12/749,076号美国申请的延续，该申请以其整体并入本文作为参考。 
技术领域
本实用新型涉及多结太阳能电池。 
背景技术
已知主要由III-V半导体合金制成的多结太阳能电池所产生的太阳能电池效率优于其他类型的光伏材料的效率。这类合金是来自标准周期表中第III和V栏的元素的组合，在下文中通过它们的标准化学符号、名称以及简写来确定。(本领域技术人员能通过类别来确定它们的半导体性质的类别，而无需具体参照它们的栏)。这些太阳能电池的高效率使得它们对于陆地聚光光伏系统和设定为在太空中运行的系统变得有吸引力。已经报道了在等同于数百个太阳能的聚光条件下效率大于40%的多结太阳能电池。已知的最高效装置具有3个子电池，每个子电池由功能性p-n结和其他层组成，如前和背表面场层。这些子电池通过隧道结而连接，并且主要的层是与下面的基底晶格匹配的或在变质层中生长。晶格匹配的装置和设计是期望的，因为它们具有经过证明的可靠性，且因为它们使用比变质太阳能电池更少的半导体材料，所述变质太阳能电池需要相对厚的缓冲层来适应各种材料的晶格常数的差异。如题目为"GaInNAsSb Solar Cell Grown by Molecular Beam Epitaxy"的第12/217818号美国专利申请所述，GaInNAsSb层10包括缓冲层22，以与基底12进行晶格匹配。 
由此可见，现有技术的太阳能电池需要缓冲层来适应各种材料的晶格常数的差异，因此，需对太阳能电池的结构进行改进。 
实用新型内容
本实用新型旨在克服上述缺陷。 
为此，本实用新型提供了一种多结太阳能电池，其包括：第一子电池、第二子电池、GaInNAsSb子电池和基底，所述GaInNAsSb子电池与所述基底相邻，并且依次包括：前表面场层、发射体层、GaInNAsSb基座层以及背表面场层。 
在本实用新型的多结太阳能电池的某些实施方式中，所述GaInNAsSb基座层的厚度为1000nm至2000nm。 
在本实用新型的多结太阳能电池的某些实施方式中，所述基底为GaAS基底或Ge基底。 
在本实用新型的多结太阳能电池的某些实施方式中，所述第一子电池和所述第二子电池之间存在隧道结，并且在所述第二子电池和所述GaInNAsSb子电池之间存在隧道结。 
通过采用本实用新型的多结太阳能电池，可以具有以下有益技术效果：可以省略相对较厚的缓冲层。 
附图说明
通过参考下面详述的描述，结合附图，将更好地理解本实用新型。 
图1A是体现本实用新型的三结太阳能电池的横截面示意图。 
图1B是体现本实用新型的四结太阳能电池的横截面示意图。 
图2A是本实用新型的GaInNAsSb子电池的横截面示意图。 
图2B是说明实例GaInNAsSb子电池的横截面详细示意图。 
图3是表示用于比较的由不同合金材料形成的子电池的效率对带隙能量的图表。 
图4是表示用于比较的由不同合金材料形成的子电池的短路电流(Jsc)和开路电压(Voc)的图表。 
图5是表示在1倍太阳光AM1.5D照度下，对于体现本实用新型子电池的三结太阳能电池，光电流对电压变化的图表。 
图6是表示在等同于523倍太阳光的AM1.5D照度下，对于体现本实用新型子电池的三结太阳能电池，光电流随电压变化的图表。 
图7是通过由基底赋予膜的应变而区分的Sb低、In和N增加的 GaInNAsSb子电池的短路电流(Jsc)和开路电压(Voc)的图表。 
具体实施方式
图1A是表示本实用新型三结太阳能电池10的实例的横截面示意图，太阳能电池10基本上由Sb低、In和N增加的GaInNAsSb子电池12和(Al)InGaP的顶部子电池16以及利用(In)GaAs的中部子电池18构成，子电池12邻近Ge、GaAs或其他相容性基底14。隧道结20位于子电池16与18之间，而隧道结22位于子电池18和12之间。子电池12、16、18中的每一个都包括几个关联层，包括前和背表面场(surface field)、发射体以及基座(base)。指定的子电池材料(如(In)GaAs)形成基座层，并且可以或可以不形成其他层。 
也可以将Sb低、In和N增加的GaInNAsSb子电池并入具有4个或更多个结的多结太阳能电池中，而不偏离本实用新型的精神和范围。图1B示出一个这样的四结太阳能电池100，其具有作为第三结的特定的Sb低、In和N增加的GaInNAsSb子电池12，并且具有(Al)InGaP的顶部子电池16、(In)GaAs的第二子电池18以及Ge的底部子电池140，底部子电池140也可以并入锗(Ge)基底中。子电池16、18、12、140中的每一个都被各自的隧道结20、22、24隔开，且子电池16、18、12、140中的每一个都可以包括几个关联层，包括任选的前和背表面场、发射体和基座。指定的子电池材料(如(In)GaAs)形成基座层，并且可以或可以不形成其他层。 
通过进一步阐述，图2A是本实用新型的GaInNAsSb子电池12更多详情的横截面示意图。Sb低、In和N增加的GaInNAsSb子电池12因此特征是，其使用Sb低、In和N增加的GaInNAsSb作为子电池12中的基座层220。GaInNAsSb子电池12的其他组件，包括发射体26、任选的前表面场28和背表面场30在内，优选是III-V合金，包括实例GaInNAs(Sb)、(In)(Al)GaAs、(Al)InGaP或Ge。Sb低、In和N增加的GaInNAsSb基座220可以是p型或n型，并且发射体26为相反类型。 
为了确定Sb对In和N增加的GaInNAsSb子电池性能的影响，研究了图2B所示的各种结构类型(12)的子电池。图2B是图2A中更常见结构 的代表性实例。无Sb、Sb低(0.001≤z≤0.03)和Sb高(0.03<z<0.06)的基座层220通过分子束外延而生长，并且与GaAs基底(未显示)基本为晶格匹配的。这些合金组合物通过二次离子质谱而证实。使子电池12经历热退火，用通常已知的太阳能电池加工进行处理，然后在阻断所有高于GaAs带隙的光的滤光器下，在AM1.5D光谱(1倍太阳光)下进行测量。该滤光器是合适的，因为GaInNAsSb子电池12通常在多结堆积中位于(In)GaAs子电池之下(如图1A和1B)，因此更高能量的光不会到达子电池12。 
图3表示随其带隙的变化通过不同Sb分数而生长的子电池12所产生的效率。铟和氮的浓度各自分别为0.07-0.18以及0.025-0.04。可以看出，Sb低、In和N增加的GaInNAsSb子电池(由三角形表示)始终具有比其他两个候选者(由菱形和方形表示)更高的子电池效率。这是由于Sb低、In和N增强的GaInNAsSb装置中高电压和高电流能力的组合所致(参见图4)。如图4所示，低浓度和高浓度Sb装置都具有充足的短路电流来匹配高效(Al)InGaP子电池和(In)GaAs子电池(在过滤的AM1.5D光谱下，>13mA/cm2)，并且因此它们可以用于典型的三结或四结太阳能电池10、100中，而不需要减少通过整个电池的总电流。这种电流匹配对于高效率是必须的。无Sb的装置具有相对高的子电池效率，这是由于它们的高开路电压所致，但是它们的短路电流对于高效多结太阳能电池而言过低，如图4所示。 
图4还证实，如以前针对其他合金组合物所报道的，Sb对电压具有不利影响。然而，与以前针对其他合金组合物所报道的相反，添加锑不降低短路电流。低Sb型子电池具有比高Sb型子电池高约100mV的开路电压。为了说明这种改善的影响，发现与开路电压为3.0V的其他相同电池相比，开路电压为3.1V的三结太阳能电池10具有高3.3%的相对效率。因此，对于高效太阳能电池而言，在GaInNAs(Sb)太阳能电池中包括Sb是产生充足的电流所必须的，但是仅通过利用低Sb(0.1-3%)就能实现高电压和高电流。 
压缩应变改善了Sb低、In和N增加的GaInNAsSb子电池10、100的开路电压。更具体而言，Sb低、In和N增加的GaInNAsSb层220具 有当完全释放(≤0.5%或更大的)时比GaAs或Ge基底更大的晶格常数，并且因此当在这些基底上假型生长时，处于压缩应变下。与具有较小的完全释放的晶格常数相比，它们还产生更好的装置性能(在拉伸应变下)。 
图7表示在压缩应变(三角形)和拉伸应变(菱形)下生长于GaAs基底上的Sb低、In和N增加的GaInNAsSb子电池的短路电流和开路电压。可以看出，压缩应变下的子电池始终具有比处于拉伸应变下的子电池更高的开路电压。 
已经将Sb低、In和N增加的压缩应变的GaInNAsSb子电池成功地集成到高效多结太阳能电池中。图5表示在等同于1倍太阳光的AM1.5D照度下，图1A结构的三结太阳能电池的电流-电压曲线。该装置的效率为30.5%。图6表示在等同于523倍太阳光的聚光下运行的三结太阳能电池的电流-电压曲线，效率为39.2%。 
与已知的GaInNAsSb合金相比，本实用新型的带隙为至少0.9eV的合金组合物是锑(Sb)含量低、铟(In)含量增加且氮(N)含量增加的Ga1-xInxNyAs1-y-zSbz，实现与GaAs和Ge基底基本晶格匹配，并且在适合用于多结太阳能电池的GaInNAsSb子电池中提供高短路电流和高开路电压。Ga1-xInxNyAs1-y-zSbz的组成范围为0.07≤x≤0.18、0.025≤y≤0.04且0.001≤z≤0.03。这些组成范围在GaInNAsSb中使用比以前所教导的更大分数的In和N，并允许产生具有在0.9-1.1eV范围内为设计-可调式带隙的子电池，所述范围对于GaInNAsSb子电池而言为目的范围。该组成范围的合金在上文表示为“锑低、铟和氮增加的GaInNAsSb”合金。这类合金的子电池可以通过分子束外延(MBE)而生长，且应当能通过利用本领域技术人员已知技术的有机金属化学气相沉积(MOCVD)而生长。 
参考具体实施方式，已经对本实用新型进行了解释。其他实施方式对于本领域普通技术人员而言是显而易见的。因此，除了所附权利要求书所示，并非意图限制本实用新型。 

Claims (4)

1.一种多结太阳能电池，其特征在于，包括： 
第一子电池； 
第二子电池； 
GaInNAsSb子电池； 
基底； 
所述GaInNAsSb子电池与所述基底相邻，并且依次包括：前表面场层、发射体层、GaInNAsSb基座层以及背表面场层。 
2.如权利要求1所述的多结太阳能电池，其特征在于，所述GaInNAsSb基座层的厚度为1000nm至2000nm。 
3.如权利要求1所述的多结太阳能电池，其特征在于，所述基底为GaAS基底或Ge基底。 
4.如权利要求1-3中任一项所述的多结太阳能电池，其特征在于，所述第一子电池和所述第二子电池之间存在隧道结，并且在所述第二子电池和所述GaInNAsSb子电池之间存在隧道结。 
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