KR20130018283A - 태양전지를 위한 격자 정합 가능한 합금 - Google Patents

태양전지를 위한 격자 정합 가능한 합금 Download PDF

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KR20130018283A
KR20130018283A KR1020127028355A KR20127028355A KR20130018283A KR 20130018283 A KR20130018283 A KR 20130018283A KR 1020127028355 A KR1020127028355 A KR 1020127028355A KR 20127028355 A KR20127028355 A KR 20127028355A KR 20130018283 A KR20130018283 A KR 20130018283A
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subcells
content
subcell
solar cells
gaas
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레베카 엘리자베쓰 존스
호맨 베르나르드 유엔
팅 리우
프라노브 미스라
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솔라 정크션 코포레이션
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Abstract

본 발명에서는 0.9 eV의 밴드갭을 지니는 태양전지의 서브셀을 위한 합금 조성물, 즉, 적은 안티몬(Sb) 함량 및 증가된 인듐(In) 함량과 증가된 질소(N) 함량을 지녀서, GaAs 및 Ge 기판에 실질적인 격자 정합을 달성하며 다중 접합 태양전지를 위한 GaInNAsSb 서브셀에서의 높은 단락 전류 및 높은 개회로 전압 둘 모두를 제공하는 Ga1 - xInxNyAs1 -y- zSbz가 제공된다. Ga1 - xInxNyAs1 -y- zSbz를 위한 조성 범위가 0.07 ≤ x ≤ 0.18, 0.025 ≤ y ≤ 0.04 및 0.001 ≤ z ≤ 0.03이다.

Description

태양전지를 위한 격자 정합 가능한 합금{LATTICE MATCHABLE ALLOY FOR SOLAR CELLS}
관련 기술에 대한 참조
해당사항 없음.
연방정부 지원 연구 또는 개발하에 이루어진 발명에 대한 권리에 관한 설명
해당사항 없음.
콤팩트 디스크로 제출된 "서열목록", 표, 또는 컴퓨터 프로그램 목록 첨부물에 대한 참조
해당사항 없음.
본 발명은 다중 접합 태양전지, 특히, III-V족 반도체 합금으로 구성된 고효율 태양전지에 관한 것이다.
다른 유형의 광전 물질의 효율을 능가하는 태양전지 효율을 생성키시기 위한 III-V족 반도체 합금으로 주로 제조된 다중 접합 태양전지가 공지되어 있다. 그러한 합금은 이하 표준 화학 기호, 명칭 및 약어로 표시되는 원소주기율표의 III족 및 V족으로부터 선택된 원소의 조합물이다. (당업자라면 이들 족의 특별한 참조 없이도 종류에 따른 이들 종류의 반도체 성질을 확인할 수 있다). 이들 태양전지의 높은 효율은 이들이 지상용 집광 광전 시스템 및 야외에서 작동하도록 설계된 시스템에 주목되게 하고 있다. 수백 개의 태양과 동등한 집광하에 40% 이상의 효율을 지닌 다중 접합 태양전지가 보고되었다. 공지된 가장 높은 효율의 소자는 3 개의 서브셀을 지니며, 그러한 각각의 서브셀은 기능적 p-n 접합면 및 그 밖의 층, 예컨대, 전면 및 후면 전계층으로 이루어져 있다. 이들 서브셀은 터널 접합면(tunnel junction)을 통해서 연결되고, 주된 층은 하부 기판에 격자 정합(lattice matching)되거나 변성 층상에 성장한다. 격자 정합형 소자 및 디자인이 바람직한데, 그 이유는 이들이 신뢰성이 있는 것으로 입증되었기 때문이며, 이들이 다양한 물질의 격자 상수에서의 차이를 수용하기 위해서 비교적 두꺼운 완충 층을 필요로 하는 변성 태양전지보다 더 적은 반도체 물질을 사용하기 때문이다. 본원에서 참조로 통합되는 발명의 명칭 "GaInNAsSb Solar Cells Grown by Molecular Beam Epitaxy"의 미국특허출원 제12/217818호에 더욱 완전히 기재된 바와 같이, 약 1.0 eV의 밴드 갭을 지니는 제 3 접합면을 생성시키기 위한 GaInNAsSb 물질로 제조된 층은 다중 접합 셀의 효율을 개선시키기 위한 유망한 방법을 제공한다. 그럼에도 불구하고, 그러한 적용에서 기재된 셀에 대한 개선이 고려되어야 한다.
공지된 가장 높은 효율의 격자-정합형 태양 전지는 전형적으로 게르마늄 (Ge) 기판상에 에피택셜하게(epitaxially) 성장한 세 개의 기능적 p-n 접합면 또는 서브셀의 모놀리스식 스택(monolithic stack)을 포함한다. 상부 서브셀은 (Al)GaInP로 제조되고, 중간 셀은 (In)GaAs로 제조되고, 하부 접합면은 Ge 기판을 포함한다. (구성 원소가 삽입식으로 표현된 III-V 합금에 대한 상기 명명법은 그러한 특정의 원소가 제로(0)일 수 있는 변화 조건을 나타낸다). 이러한 구조는 문헌[J.F. Geisz et al., "Inverted GaInP/(In)GaAs/InGaAs triple-junction solar cells with low-stress metamorphic bottom junctions," Proceedings of the 33rd IEEE PVSC Photovoltaics Specialists Conference, 2008]에 의해서 보고된 바와 같이, 하부 접합면이 대체로 상부 두 접합면의 단락 전류(short circuit current)의 두 배를 생성시킬 수 있다는 점에서 효율 면에서 최적이 아니다. 이러한 여분의 용량은 버려지는데, 그 이유는 전류 정합(current matching)으로 공지된 설계 피쳐(design feature)인 순전류(net current)가 전체 스택에 걸쳐서 균일해야 하기 때문이다.
상기 나타낸 미국특허출원 제12/217,818호의 개시내용에서, 실질적으로 1.0 eV 근처의 밴드 갭을 지니는 Ge 또는 GaAs에 실질적으로 격자 정합된 물질이 하부 Ge 접합면을 더 높은 전압을 생성시키는 상이한 물질로 제조된 접합면으로 대체시킴으로써 상기 기재된 구조보다 더 높은 효율을 지니는 삼중 정합 태양전지를 생성시키기 위해서 사용될 수 있음을 나타내고 있다.
또한, 이러한 1 eV 물질의 사용은 0.7 eV(게르마늄의 경우의 밴드 갭)와 1.1 eV(약 1 eV 층의 경우의 밴드 갭 범위의 상단) 사이에 오는 스펙트럼의 전부분의 이점을 취하기 위한 제 4 접합면으로서 여겨질 수 있음이 제안되었다. 참조예[S. R. Kurtz, D. Myers, and J. M. Olson, "Projected Performance of Three and Four-Junction Devices Using GaAs and GaInP," 26th IEEE Photovoltaics Specialists Conference, 1997, pp. 875-878]. Ga1 - xInxNyAs1 -y는 그러한 1 eV 물질로서 확인되었지만, 다른 서브셀과 정합하기에 충분히 높은 전류가 달성되지 않았다[참조예: A. J. Ptak et al., Journal of Applied Physics 98 (2005) 094501]. 이는 효과적인 포토캐리어(photocarrier) 수집을 방해하는 작은 소수 담체 확산 길이(minority carrier diffusion length)에 기인되었다. 갈륨, 인듐, 질소, 비소 및 다양한 농도의 안티몬으로 구성된 태양전지 서브셀 설계(GaInNAsSb)가 조사되어, 안티몬이 표면 조도를 감소시키고 어닐링이 필요하지 않은 높은 기판 온도에서의 성장을 가능하게 하는데 도움이 된다는 결과를 보고하고 있지만, 조사자들은 안티몬이 적은 농도라도 충분한 소자 성능에 유해하기 때문에 피하는 것이 중요함을 보고하고 있다. 참조[Ptak et al, "Effects of temperature, nitrogen ion, and antimony on wide depletion width GalnNAs," Journal of Vacuum Science Technology B 25(3) May/June 2007 pp. 955-959]. 그러한 논문에서 보고된 소자는 다중 접합 태양전지로 통합시키기에 너무 낮은 단락 전류를 지니고 있다. 그럼에도 불구하고, Ga1 -xInxNyAs1-y-zSbz(여기서, 0.05 ≤ x ≤ 0.07, 0.01 ≤ y ≤ 0.02 및 0.02 ≤ z ≤ 0.06)가 다중 접합 태양전지 내로의 통합에 충분한 전류를 제공할 수 있는 약 1 eV의 밴드 갭을 지닌 격자-정합 물질을 생성시키기 위해서 사용될 수 있음이 공지되어 있다. 그러나, 이러한 물질을 함유하는 서브셀에 의해서 생성된 전압은 1 태양의 조명하에서 0.30V를 초과하지 않았다. 참조[D.B. Jackrel et al., Journal of Applied Physics 101 (114916) 2007]. 따라서, 하부 서브셀로서 이러한 물질에 의한 삼중-접합 태양전지는 약 0.25 V의 개회로 전압을 생성하는 Ge의 하부 서브셀을 지닌 유사한 삼중 접합 태양전지에 비해서 단지 작은 개선인 것으로 예상되었다. 참조[H. Cotal et al., Energy and Environmental Science 2 (174) 2009]. 0.30 V 보다 더 높은 개회로 전압 및 (Al)InGaP 및 (In)GaAs 서브셀과 정합되기에 충분한 전류를 생성시키는 1 eV 근처의 밴드 갭을 지닌 Ge 및 GaAs에 격자-정합되는 물질이 요구되고 있다. 그러한 물질은 또한 4 또는 그 초과의 접합면을 지닌 고효율 태양전지에서 서브셀로서 유리할 것이다.
발명의 요약
본 발명에 따르면, 0.9 eV 이상의 밴드갭을 지니는 합금 조성물, 즉, 공지된 GaInNAsSb의 합금에 비해서 적은 안티몬(Sb) 함량 및 증가된 인듐(In) 함량 및 증가된 질소(N) 함량을 지녀서, GaAs 및 Ge 기판에 대한 실질적인 격자 정합을 달성하고, 다중 접합 태양전지에 사용하기에 적합한 GaInNAsSb 서브셀에서의 높은 단락 전류 및 높은 개회로 전압 둘 모두를 제공하는 Ga1 - xInxNyAs1 -y- zSbz을 제공한다. Ga1 -xInxNyAs1-y-zSbz에 대한 조성 범위는 0.07 ≤ x ≤ 0.18, 0.025 ≤ y ≤ 0.04 및 0.001 ≤ z ≤ 0.03이다. 이들 조성 범위는 이전에 교시된 것보다 GaInNAsSb에서의 더 큰 분율의 In 및 N을 사용하고 있으며, GaInNAsSb 서브셀을 관심있는 범위인 0.9 내지 1.1 eV의 범위에서 설계-조정 가능한 밴드갭을 지닌 서브셀의 생산을 가능하게 한다. 이러한 조성 범위 합금은 이하 "저-안티몬, 증가된 인듐-및-질소 GaInNAsSb" 합금으로 나타낼 것이다. 그러한 합금의 서브셀은 분자 빔 에피택시(molecular beam epitaxy: MBE)에 의해서 성장할 수 있으며, 당업자에게는 공지된 기술을 이용하는, 금속 유기 화학 기상 증착(metallorganic chemical vapor deposition: MOCVD)에 의해서 성장하는 것이 가능해야 한다.
본원에서 기재된 본 발명은 원소의 특정 범위의 발견 및 확인, 즉, 개시된 태양전지의 성능을 현저하게 개선시키는 GaInNAsSb에서의 다양한 원소의 특이적 합금 혼합물을 포함한, 미국특허출원 제12/217,818호에서 기재된 작업의 추가 개선을 반영하고 있다.
본 발명은 첨부된 도면과 결부되어 하기 상세한 설명을 참조함으로써 더 잘 이해될 것이다.
도 1a는 본 발명을 통합하고 있는 3 접합 태양전지의 개략적인 횡단면도이다.
도 1b는 본 발명을 통합하고 있는 4 접합 태양전지의 개략적인 횡단면도이다.
도 2a는 본 발명에 따른 GaInNAsSb 서브셀의 횡단면도이다.
도 2b는 예시적인 GaInNAsSb 서브셀을 예시하고 있는 상세 개략적 횡단면도이다.
도 3은 비교를 위한 여러 합금 물질로부터 형성된 서브셀의 효율 대 밴드갭 에너지를 나타내는 그래프이다.
도 4는 비교를 위한 여러 합금 물질로부터 형성된 서브셀의 단락 전류(Jsc) 및 개회로 전압(Voc)을 나타내는 플롯이다.
도 5는 1-태양(1-sun) AM1.5D 조명하에 본 발명에 따른 서브셀을 통합하고 있는 삼중 접합 태양전지를 위한 전압의 함수로서 광전류를 나타내는 그래프이다.
도 6은, 523개의 태양과 동등한 AM1.5D 조명 하에, 본 발명에 따른 서브셀을 통합하고 있는 삼중 접합 태양전지에 대한 전압의 함수로서 광전류를 나타내는 그래프이다.
도 7은 기판에 의해서 필름에 부여된 응력(strain)에 의해서 구별된 저 Sb 및 증가된 In와 N의 GaInNAsSb 서브셀의 단락 전류(Jsc) 및 개회로 전압(Voc)의 그래프이다.
발명의 상세한 설명
도 1a는 근본적으로는 (Al)InGaP의 상부 서브셀(16)과 (In)GaAs를 사용한 중간 서브셀(18)과 함께 Ge, GaAs 또는 다르게는 양립성 기판(14)에 인접한 저 Sb 및 증가된 In와 N의 GaInNAsSb 서브셀(12)로 이루어진 본 발명에 따른 삼중 접합 태양전지(10)의 예를 도시하는 개략적인 횡단면도이다. 터널 접합면(20)은 서브셀(16)과 서브셀(18) 사에에 있으며, 터널 접합면(22)은 서브셀(18)과 서브셀(12) 사이에 있다. 서브셀(12, 16, 18)의 각각은 전면전계 및 후면전계를 포함한 몇 개의 관련 층, 이미터(emitter) 및 베이스를 포함한다. 지명된 서브셀 물질(예, (In)GaAs)은 베이스 층을 형성할 수 있고, 다른 층들을 형성하거나 그렇지 않을 수 있다.
저 Sb 및 증가된 In와 N의 GaInNAsSb 서브셀은 또한 본 발명의 사상 및 범위를 벗어나지 않은 4 개 이상의 접합면을 지닌 다중 접합 태양전지 내로 통합될 수 있다. 도 1b는 제 3 접합면으로서 특이적인 저 Sb 및 증가된 In와 N의 GaInNAsSb 서브셀(12), 및 (Al)InGaP의 상부 서브셀(16), (In)GaAs의 제 2 서브셀 및 게르마늄(Ge) 기판 내로 또한 통합되는 Ge의 하부 서브셀(140)을 지닌 한 가지의 그러한 4-접합 태양전지(100)를 나타내고 있다. 서브셀(16, 18, 12, 140)의 각각은 각각의 터널 접합면(20, 22, 24)에 의해서 분리되고, 서브셀(16, 18, 12, 140)의 각각은 임의의 전면전계 및 후면전계를 포함한 몇 개의 관련 층, 이미터 및 베이스를 포함할 수 있다. 지명된 서브셀 물질(예, (In)GaAs)은 베이스 층을 형성할 수 있고, 다른 층들을 형성하거나 그렇지 않을 수 있다.
추가의 예로서, 도 2a는 본 발명에 따른 GaInNAsSb 서브셀(12)의 더욱 상세한 도면으로 개략적인 단면도이다. 따라서, 저 Sb 및 증가된 In와 N의 GaInNAsSb 서브셀(12)은 서브셀(12)에서의 베이스 층(220)으로서 저 Sb 및 증가된 In와 N의 GaInNAsSb의 사용이 특징이다. 이미터(26), 임의의 전면전계(28) 및 후면전계(30)를 포함한 GaInNAsSb 서브셀(12)의 다른 성분은 바람직하게는, 예를 들어, GaInNAs(Sb), (In)(Al)GaAs, (Al)InGaP 또는 Ge를 포함한 III-V 합금이다. 저 Sb 및 증가된 In와 N의 GaInNAsSb 베이스(220)은 상반된 유형의 이미터(26)와 함께, p-타입 또는 n-타입일 수 있다.
증가된 In와 N의 GaInNAsSb 서브셀 성능에 대한 Sb의 효과를 측정하기 위해서, 도 2b에서 도시된 구조의 유형의 다양한 서브셀(12)이 조사되었다. 도 2b는 도 2a에서의 더욱 일반적인 구조(12)의 대표적인 예이다. Sb가 없는 베이스 층(220), 저 Sb(0.001 ≤ z ≤ 0.03)를 지닌 베이스층(220) 및 많은 Sb(0.03 ≤ z ≤ 0.06)을 지니는 베이스층(220)이 분자 빔 에피택시에 의해서 성장하였고, GaAs 기판(도시되지 않음)에 실질적으로 격자-정합되었다. 이들 합금 조성이 이차 이온 질량 분광법에 의해서 입증되었다. 서브셀(12)은 열적 어닐링에 주어지고, 일반적으로 공지된 태양전지 공정으로 처리되고, 이어서, GaAs 밴드 갭을 초과하는 모든 빛을 차단하는 필터 아래에서 AM1.5D 스펙트럼(1 햇빛)하에 측정되었다. 이러한 필터가 적절한데, 그 이유는 GaInNAsSb 서브셀(12)이 전형적으로 다중접합 스택 내의 (In)GaAs 서브셀 아래에 있으며(예, 도 1a 및 도 1b), 그에 따라서, 더 높은 에너지의 빛이 서브셀(12)에 도달하지 않을 것이기 때문이다.
도 3은 다양한 분율의 Sb로 성장한 서브셀(12)의 밴드 갭의 함수로서 그러한 서브셀(12)에 의해서 생성된 효율을 도시하고 있다. 인듐 및 질소농도는 각각 0.07 내지 0.18 및 0.025 내지 0.04 범위에 있다. 저 Sb 및 증가된 In와 N의 GaInNAsSb 서브셀(삼각형으로 표시됨)은 다른 두 후보 서브셀(다이아몬드 및 사각으로 표시됨)에 비해서 지속적으로 더 높은 서브셀 효율을 지님을 볼 수 있다. 이는 저 Sb 및 증가된 In와 N의 GaInNAsSb 소자에서의 고전압 및 고전류 기능의 조합에 기인한다(도 4 참조 . 도 4에서 볼 수 있는 바와 같이, 저농도 및 고농도 Sb 소자 둘 모두는 고효율 (Al)InGaP 서브셀 및 (In)GaAs 서브셀(여과된 AM1.5D 스팩트럼하의 > 13 mA/cm2)과 정합하기에 충분한 단락 전류를 지니며, 그에 따라서, 이들은 전체 셀을 통한 전체 전류를 감소시키지 않으면서 전형적인 3-접합 또는 4-접합 태양전지(10, 100)에서 사용될 수 있다. 이러한 전류-정합은 고효율에 필수적이다. Sb가 없는 이러한 소자는 이들의 높은 개회로 전압으로 인해서 비교적 높은 서브셀 효율을 지니지만, 이들의 단락 전류는 도 4에 도시된 바와 같이 고효율 다중 접합 태양전지용으로는 너무 낮다.
도 4는 또한 Sb가, 다른 합금 조성에 대해서 이전에 보고된 바와 같이, 전압에 대해 유해한 효과를 지님을 입증하고 있다. 그러나, 다른 합금 조성에 대해서 이전에 보고된 것과는 상반되게, 안티몬의 첨가는 단락전류를 감소시키지 않는다. 저 Sb-유형 서브셀은 고 Sb-유형 서브셀에 비해서 대체로 100mV 더 높은 개회로 전압을 지닌다. 이러한 개선 효과를 설명하기 위해서, 3.1V의 개회로 전압을 지니는 삼중-접합 태양전지(10)가 3.0V의 개회로 전압을 지니는 다른 동등한 셀에 비해서 3.3% 더 높은 상대적 효율을 지니는 것으로 나타내고 있다. 따라서, GaInNAs(Sb) 태양전지에서의 Sb의 포함은 고효율 태양전지에 충분한 전류를 생성시키기 위해서 필수적이지만, 저 Sb(0.1-3%)를 사용함으로도, 고전압 및 고전류 둘 모두가 달성될 수 있다.
압축 응력(compressive strain)은 저 Sb 및 증가된 In와 N의 GaInNAsSb 서브셀(10, 100)의 개회로 전압을 개선시킨다. 더욱 특히, 저 Sb 및 증가된 In와 N의 GaInNAsSb 층(220)은 완전히 이완되었을 때의 GaAs 또는 Ge 기판의 격자 상수보다 큰 격자 상수(≤0.5% 더 큼)를 지니며, 그에 따라서, 그들 기판상에서 부정규형으로(pseudomorphically) 성장하는 경우에 압축 응력 하에 있다. 이들은 또한 더 작으며 완전히 이완된 격자 상수(인장 응력 하에)를 지니는 층 보다 더 우수한 소자 성능을 부여한다.
도 7은 압축 응력(삼각형) 및 인장 응력(다이아몬드) 하의 GaAs 기판에서 성장한 저 Sb 및 증가된 In와 N의 GaInNAsSb 서브셀의 단락 전류 및 개회로 전압을 도시하고 있다. 압축 응력하의 서브셀은 인장 응력하의 서브셀에 비해서 지속적으로 더 높은 개회로 전압을 지니는 것을 볼 수 있다.
저 Sb 및 증가된 In와 N의 압축식으로-응력이 가해진 GaInNAsSb 서브셀은 고효율 다중 접합 태양전지 내로 성공적으로 일체화되었다. 도 5는 1 태양과 동등한 AM1.5D 조명하에 도 1a에서의 구조의 삼중-접합 태양전지의 전류-전압 곡선을 도시하고 있다. 이러한 소자의 효율은 30.5%이다. 도 6은, 39.2%의 효율을 지니는, 523 태양과 동등한 농도하에 작동된 삼중 접합 태양전지의 전류-전압 곡선을 도시하고 있다.
본 발명은 특이적 구체예를 참조로 하여 설명되었다. 다른 구체예가 당업자에게는 자명할 것이다. 따라서, 본 발명이 특허청구범위에 의해서 나타낸 바를 제외하고는 제한되는 것이 아니다.

Claims (9)

  1. 다중 접합 태양전지의 선택된 서브셀(subcell)에 사용하기 위한, 0.9 eV 이상의 밴드갭(bandgap)을 달성하도록 적은 안티몬(Sb) 함량 및 증가된 인듐(In) 함량과 증가된 질소(N) 함량을 지니는 Ga1 - xInxNyAs1 -y- zSbz를 포함하는, 기판에 대한 실질적인 격자 정합에 적합한 합금 조성물.
  2. 제 1항에 있어서, 인접 기판이 GaAs 및 Ge 군으로부터 선택되는 합금 조성물.
  3. 제 1항에 있어서, Ga1 - xInxNyAs1 -y- zSbz를 위한 조성 범위가 0.07 ≤ x ≤ 0.18, 0.025 ≤ y ≤ 0.04 및 0.001 ≤ z ≤ 0.03인 합금 조성물.
  4. 0.9 eV 이상의 밴드갭(bandgap)을 달성하도록 적은 안티몬(Sb) 함량 및 증가된 인듐(In) 함량과 증가된 질소(N) 함량을 지니는 Ga1 - xInxNyAs1 -y- zSbz를 포함하는 하나 이상의 서브셀을 포함하는 다중 접합 태양전지.
  5. 제 4항에 있어서, 인접 기판이 GaAs 및 Ge 군으로부터 선택되는 다중 접합 태양전지.
  6. 제 4항에 있어서, Ga1 - xInxNyAs1 -y- zSbz를 위한 조성 범위가 0.07 ≤ x ≤ 0.18, 0.025 ≤ y ≤ 0.04 및 0.001 ≤ z ≤ 0.03인 다중 접합 태양전지.
  7. 적은 안티몬(Sb) 함량 및 증가된 인듐(In) 함량과 증가된 질소(N) 함량을 지니는 Ga1 - xInxNyAs1 -y- zSbz의 합금의 제 1 서브셀을 형성시키고, 상기 제 1 서브셀을 하나 이상의 인접 서브셀과 연결시켜 다중 접합 태양전지를 형성시킴을 포함하여 다중 접합 태양전지를 제조하는 방법으로서, 조성물이 0.9 eV 이상의 밴드갭을 달성하도록 선택되는 방법.
  8. 제 7항에 있어서, Ga1 - xInxNyAs1 -y- zSbz를 위한 조성 범위가 0.07 ≤ x ≤ 0.18, 0.025 ≤ y ≤ 0.04 및 0.001 ≤ z ≤ 0.03인 방법.
  9. 제 7항에 있어서, Ga1 - xInxNyAs1 -y- zSbz 서브셀이 GaAs 및 Ge 군으로부터 선택된 기판에 실질적으로 격자 정합되는 방법.
KR1020127028355A 2010-03-29 2010-12-21 태양전지를 위한 격자 정합 가능한 합금 KR20130018283A (ko)

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