US20110232730A1 - Lattice matchable alloy for solar cells - Google Patents

Lattice matchable alloy for solar cells Download PDF

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US20110232730A1
US20110232730A1 US12/749,076 US74907610A US2011232730A1 US 20110232730 A1 US20110232730 A1 US 20110232730A1 US 74907610 A US74907610 A US 74907610A US 2011232730 A1 US2011232730 A1 US 2011232730A1
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Prior art keywords
subcell
content
solar cell
enhanced
subcells
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Abandoned
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US12/749,076
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English (en)
Inventor
Rebecca Elizabeth Jones
Homan Bernard Yuen
Ting Liu
Pranob Misra
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Cactus Materials Inc
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Solar Junction Corp
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Priority to US12/749,076 priority Critical patent/US20110232730A1/en
Assigned to SOLAR JUNCTION CORPORATION reassignment SOLAR JUNCTION CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: JONES, REBECCA ELIZABETH, LIU, TING, MISRA, PRANOB, YUEN, HOMAN BERNARD
Priority to PCT/US2010/061635 priority patent/WO2011123164A1/en
Priority to SG2012070207A priority patent/SG184191A1/en
Priority to EP18208211.5A priority patent/EP3471149A1/en
Priority to SG10201503386SA priority patent/SG10201503386SA/en
Priority to EP10849171.3A priority patent/EP2553731B1/en
Priority to ES10849171T priority patent/ES2720596T3/es
Priority to AU2010349711A priority patent/AU2010349711A1/en
Priority to KR1020127028355A priority patent/KR20130018283A/ko
Priority to CN201090001501.7U priority patent/CN203707143U/zh
Priority to JP2013502560A priority patent/JP2013524505A/ja
Publication of US20110232730A1 publication Critical patent/US20110232730A1/en
Priority to US13/618,496 priority patent/US8575473B2/en
Priority to US13/739,989 priority patent/US8912433B2/en
Priority to US13/854,740 priority patent/US20130220409A1/en
Priority to US14/512,224 priority patent/US9018522B2/en
Priority to US14/597,621 priority patent/US20150122318A1/en
Priority to US14/678,737 priority patent/US9252315B2/en
Priority to US14/979,899 priority patent/US20160111569A1/en
Priority to US15/391,659 priority patent/US9985152B2/en
Assigned to ARRAY PHOTONICS, INC. reassignment ARRAY PHOTONICS, INC. CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: SOLAR JUNCTION CORPORATION
Assigned to CACTUS MATERIALS, INC. reassignment CACTUS MATERIALS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ARRAY PHOTONICS, INC.
Abandoned legal-status Critical Current

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Definitions

  • the present invention relates to multijunction solar cells, and in particular to high efficiency solar cells comprised of III-V semiconductor alloys.
  • Multijunction solar cells made primarily of III-V semiconductor alloys are known to produce solar cell efficiencies exceeding efficiencies of other types of photovoltaic materials.
  • Such alloys are combinations of elements drawn from columns III and V of the standard Periodic Table, identified hereinafter by their standard chemical symbols, names and abbreviation. (Those of skill in the art can identify their class of semiconductor properties by class without specific reference to their column.)
  • the high efficiencies of these solar cells make them attractive for terrestrial concentrating photovoltaic systems and systems designed to operate in outer space.
  • Multijunction solar cells with efficiencies above 40% under concentrations equivalent to several hundred suns have been reported.
  • the known highest efficiency devices have three subcells with each subcell consisting of a functional p-n junction and other layers, such as front and back surface field layers.
  • the known highest efficiency, lattice-matched solar cells typically include a monolithic stack of three functional p-n junctions, or subcells, grown epitaxially on a germanium (Ge) substrate.
  • the top subcell has been made of (Al)GaInP, the middle one of (In)GaAs, and the bottom junction included the Ge substrate.
  • This structure is not optimal for efficiency, in that the bottom junction can generate roughly twice the short circuit current of the upper two junctions, as reported by J. F.
  • this 1 eV material might be considered as a fourth junction to take advantage of the entire portion of the spectrum lying between 0.7 eV (the band gap for germanium) and 1.1 eV (the upper end of the range of bandgaps for the ⁇ 1 eV layer). See for example, S. R. Kurtz, D. Myers, and J. M. Olson, “Projected Performance of Three and Four-Junction Devices Using GaAs and GaInP,” 26 th IEEE Photovoltaics Specialists Conference, 1997, pp. 875-878.
  • Ga 1-x In x N y As 1-y has been identified as such a 1 eV material, but currents high enough to match the other subcells have not been achieved, see, e.g., A. J. Ptak et al., Journal of Applied Physics 98 (2005) 094501. This has been attributed to low minority carrier diffusion lengths that prevent effective photocarrier collection.
  • Solar subcell design composed of gallium, indium, nitrogen, arsenic and various concentrations of antimony (GaInNAsSb) has been investigated with the reported outcome that antimony is helpful in decreasing surface roughness and allowing growth at higher substrate temperatures where annealing is not necessary, but the investigators reported that antimony, even in small concentrations is critical to be avoided as detrimental to adequate device performance.
  • Ga 1-x In x N y As 1-y-z Sb z with 0.05 ⁇ x ⁇ 0.07, 0.01 ⁇ y ⁇ 0.02 and 0.02 ⁇ z ⁇ 0.06 can be used to produce a lattice-matched material with a band gap of approximately 1 eV that can provide sufficient current for integration into a multijunction solar cell.
  • an alloy composition that has a bandgap of at least 0.9 eV, namely, Ga 1-x In x N y As 1-y-z Sb z with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content as compared with known alloys of GaInNAsSb, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells suitable for use in multijunction solar cells.
  • the composition ranges for Ga 1-x In x N y As 1-y-z Sb z are 0.07 ⁇ x ⁇ 0.18, 0.025 ⁇ y ⁇ 0.04 and 0.001 ⁇ z ⁇ 0.03.
  • composition ranges employ greater fractions of In and N in GaInNAsSb than previously taught and allow the creation of subcells with bandgaps that are design-tunable in the range of 0.9-1.1 eV, which is the range of interest for GaInNAsSb subcells.
  • This composition range alloy will hereinafter be denoted “low-antimony, enhanced indium-and-nitrogen GaInNAsSb” alloy.
  • Subcells of such an alloy can be grown by molecular beam epitaxy (MBE) and should be able to be grown by metallorganic chemical vapor deposition (MOCVD), using techniques known to one skilled in the art.
  • FIG. 1A is a schematic cross-section of a three junction solar cell incorporating the invention.
  • FIG. 1B is a schematic cross-section of a four junction solar cell incorporating the invention.
  • FIG. 2A is a schematic cross-section of a GaInNAsSb subcell according to the invention.
  • FIG. 2B is a detailed schematic cross-section illustrating an example GaInNAsSb subcell.
  • FIG. 3 is a graph showing the efficiency versus band gap energy of subcells formed from different alloy materials, for comparison.
  • FIG. 4 is a plot showing the short circuit current (J sc ) and open circuit voltage (V oc ) of subcells formed from different alloy materials, for comparison.
  • FIG. 5 is a graph showing the photocurrent as a function of voltage for a triple junction solar cell incorporating a subcell according to the invention, under 1-sun AM1.5D illumination.
  • FIG. 6 is a graph showing the photocurrent as a function of voltage for a triple junction solar cell incorporating a subcell according to the invention, under AM1.5D illumination equivalent to 523 suns.
  • FIG. 7 is a graph of the short circuit current (J sc ) and open circuit voltage (V oc ) of low Sb, enhanced In and N GaInNAsSb subcells distinguished by the strain imparted to the film by the substrate.
  • FIG. 1A is a schematic cross-section showing an example of a triple junction solar cell 10 according to the invention consisting essentially of a low Sb, enhanced In and N
  • Tunnel junction 20 is between subcells 16 and 18
  • tunnel junction 22 is between subcells 18 and 12 .
  • Each of the subcells 12 , 16 , 18 comprises several associated layers, including front and back surface fields, an emitter and a base.
  • the named subcell material e.g., (In)GaAs) forms the base layer, and may or may not form the other layers.
  • FIG. 1B shows one such four-junction solar cell 100 with a specific low Sb, enhanced In and N GaInNAsSb subcell 12 as the third junction, and with a top subcell 16 of (Al)InGaP, a second subcell 18 of (In)GaAs and a bottom subcell 140 of Ge, which is also incorporated into a germanium (Ge) substrate.
  • Each of the subcells 16 , 18 , 12 , 140 is separated by respective tunnel junctions 20 , 22 , 24 , and each of the subcells 16 , 18 , 12 , 140 may comprise several associated layers, including optional front and back surface fields, an emitter and a base.
  • the named subcell material e.g., (In)GaAs
  • forms the base layer and may or may not form the other layers.
  • FIG. 2A is a schematic cross-section in greater detail of a GaInNAsSb subcell 12 , according to the invention.
  • the low Sb, enhanced In and N GaInNAsSb subcell 12 is therefore characterized by its use of low Sb, enhanced In and N GaInNAsSb as the base layer 220 in the subcell 12 .
  • Other components of the GaInNAsSb subcell 12 including an emitter 26 , an optional front surface field 28 and back surface field 30 , are preferably III-V alloys, including by way of example GaInNAs(Sb), (In)(Al)GaAs, (Al)InGaP or Ge.
  • the low Sb, enhanced In and N GaInNAsSb base 220 may either be p-type or n-type, with an emitter 26 of the opposite type.
  • FIG. 2B is a representative example of the more general structure 12 in FIG. 2A .
  • Base layers 220 with no Sb, low Sb (0.001 ⁇ z ⁇ 0.03) and high Sb (0.03 ⁇ z ⁇ 0.06) were grown by molecular beam epitaxy and were substantially lattice-matched to a GaAs substrate (not shown). These alloy compositions were verified by secondary ion mass spectroscopy.
  • the subcells 12 were subjected to a thermal anneal, processed with generally known solar cell processing, and then measured under the AM1.5D spectrum (1 sun) below a filter that blocked all light above the GaAs band gap.
  • This filter was appropriate because a GaInNAsSb subcell 12 is typically beneath an (In)GaAs subcell in a multijunction stack (e.g., FIGS. 1A and 1B ), and thus light of higher energies will not reach the subcell 12 .
  • FIG. 3 shows the efficiencies produced by the subcells 12 grown with different fractions of Sb as a function of their band gaps.
  • the indium and nitrogen concentrations were each in the 0.07 to 0.18 and 0.025 to 0.04 ranges, respectively.
  • the low Sb, enhanced In and N GaInNAsSb subcells represented by triangles
  • the other two candidates represented by diamonds and squares. This is due to the combination of high voltage and high current capabilities in the low Sb, enhanced In and N GaInNAsSb devices. (See FIG. 4 ).
  • FIG. 4 shows the combination of high voltage and high current capabilities in the low Sb, enhanced In and N GaInNAsSb devices.
  • both the low and high concentration Sb devices have sufficient short-circuit current to match high efficiency (Al)InGaP subcells and (In)GaAs subcells (>13 mA/cm 2 under the filtered AM1.5D spectrum), and thus they may be used in typical three junction or four junction solar cells 10 , 100 without reducing the total current through the entire cell. This current-matching is essential for high efficiency.
  • the devices without Sb have relatively high subcell efficiencies due to their high open circuit voltages, but their short circuit currents are too low for high efficiency multijunction solar cells, as is shown in FIG. 4 .
  • FIG. 4 also confirms that Sb has a deleterious effect on voltage, as previously reported for other alloy compositions.
  • the low Sb-type subcells have roughly 100 mV higher open-circuit voltages than the high Sb-type subcells.
  • a triple junction solar cell 10 with an open circuit voltage of 3.1 V is found to have 3.3% higher relative efficiency compared to an otherwise identical cell with an open circuit voltage of 3.0 V.
  • the inclusion of Sb in GaInNAs(Sb) solar cells is necessary to produce sufficient current for a high efficiency solar cell, but only by using low Sb (0.1-3%) can both high voltages and high currents be achieved.
  • Compressive strain improves the open circuit voltage of low Sb, enhanced In and N GaInNAsSb subcells 10 , 100 . More specifically, low Sb, enhanced In and N GaInNAsSb layers 220 that have a lattice constant larger than that of a GaAs or Ge substrate when fully relaxed ( ⁇ 0.5% larger), and are thus under compressive strain when grown pseudomorphically on those substrates. They also give better device performance than layers with a smaller, fully relaxed lattice constant (under tensile strain).
  • FIG. 7 shows the short circuit current and open circuit voltage of low Sb, enhanced In and N GaInNAsSb subcells grown on GaAs substrates under compressive strain (triangles) and tensile strain (diamonds). It can be seen that the subcells under compressive strain have consistently higher open circuit voltages than those under tensile strain.
  • FIG. 5 shows a current-voltage curve of a triple junction solar cell of the structure in FIG. 1A under AM1.5D illumination equivalent to 1 sun. The efficiency of this device is 30.5%.
  • FIG. 6 shows the current-voltage curve of the triple junction solar cell operated under a concentration equivalent to 523 suns, with an efficiency of 39.2%.

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US12/749,076 US20110232730A1 (en) 2010-03-29 2010-03-29 Lattice matchable alloy for solar cells
JP2013502560A JP2013524505A (ja) 2010-03-29 2010-12-21 太陽電池用の格子整合可能な合金
CN201090001501.7U CN203707143U (zh) 2010-03-29 2010-12-21 多结太阳能电池
SG2012070207A SG184191A1 (en) 2010-03-29 2010-12-21 Lattice matchable alloy for solar cells
EP18208211.5A EP3471149A1 (en) 2010-03-29 2010-12-21 Lattice matchable alloy for solar cells
PCT/US2010/061635 WO2011123164A1 (en) 2010-03-29 2010-12-21 Lattice matchable alloy for solar cells
SG10201503386SA SG10201503386SA (en) 2010-03-29 2010-12-21 Lattice matchable alloy for solar cells
EP10849171.3A EP2553731B1 (en) 2010-03-29 2010-12-21 Subcell for use in a multijunction solar cell
ES10849171T ES2720596T3 (es) 2010-03-29 2010-12-21 Subcélula para su utilización en una célula solar multiunión
AU2010349711A AU2010349711A1 (en) 2010-03-29 2010-12-21 Lattice matchable alloy for solar cells
KR1020127028355A KR20130018283A (ko) 2010-03-29 2010-12-21 태양전지를 위한 격자 정합 가능한 합금
US13/618,496 US8575473B2 (en) 2010-03-29 2012-09-14 Lattice matchable alloy for solar cells
US13/739,989 US8912433B2 (en) 2010-03-29 2013-01-11 Lattice matchable alloy for solar cells
US13/854,740 US20130220409A1 (en) 2010-03-29 2013-04-01 Lattice matchable alloy for solar cells
US14/512,224 US9018522B2 (en) 2010-03-29 2014-10-10 Lattice matchable alloy for solar cells
US14/597,621 US20150122318A1 (en) 2010-03-29 2015-01-15 Lattice matchable alloy for solar cells
US14/678,737 US9252315B2 (en) 2010-03-29 2015-04-03 Lattice matchable alloy for solar cells
US14/979,899 US20160111569A1 (en) 2010-03-29 2015-12-28 Lattice matchable alloy for solar cells
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