CN106133923A - 单片式多结能量转换器 - Google Patents

单片式多结能量转换器 Download PDF

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CN106133923A
CN106133923A CN201580007461.4A CN201580007461A CN106133923A CN 106133923 A CN106133923 A CN 106133923A CN 201580007461 A CN201580007461 A CN 201580007461A CN 106133923 A CN106133923 A CN 106133923A
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semiconductor layer
energy
bragg reflector
distributed bragg
energy transducer
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CN106133923B (zh
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费伦·苏阿雷兹阿里亚斯
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Alei Photonics
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Solar Junction Corp
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Abstract

公开了一种共振腔能量转换器，该共振腔能量转换器用于转换介于1微米至1.55微米的波长范围内的辐射。共振腔能量转换器可包括一个或多个晶格匹配的GaInNAsSb结，并且可包括用于提高能量转换效率的分布式布拉格反射器和/或镜面。

Description

单片式多结能量转换器
技术领域
本公开涉及能量转换领域。
背景技术
能量转换器可用于多个应用中以从能量源为诸如手机、音频系统、家庭影院的电子装置或任何其它电子装置充电。本领域中公知的是，欧姆损耗与电压的增大反相关而与电流的增大正相关。因此，通过增大装置的电压来增大能量转换器装置的填充因子(fillfactor)是有益的。
本领域中现有技术的能量转换器包括由诸如GaAs的半导体片制成的单片式串联单层转换器。这种能量转换器可通过导线串联连接，或者可通过利用绝缘沟道在半绝缘衬底上制造转换器而分区从而在每个分区的转换器之间提供电绝缘。用于这种能量转换器的能量源是单色光，诸如在特定波长或能量下工作的激光。在该具体应用中，单色光介于1微米至1.55微米之间，位于波谱的红外区中。接近1微米对于家庭使用是欠佳的，这是因为该光源对人眼具有潜在危害，所以，因此本文中公开的实施方式致力于介于1.3-1.55微米之间的光源，以及在某些实施方式中，致力于约1.3微米的光源。然而，本领域技术人员可易于修改本文中公开的发明来转换多个波长的光。
发明内容
本发明包括紧凑型单片式多结能量转换器，该能量转换器具有相同材料的两个或更多个外延层，该两个或更多个外延层堆叠在彼此的顶部上，其中，在各外延层之间具有隧道结。因为外延层堆叠在彼此的顶部上，所以，各外延层被减薄来收集最大量的光，并且各外延层串联地转换能量，以通过增大整个装置的电压以及降低欧姆损耗(随电流增加而增加)来增加填充因子。在具有堆叠的外延层的情况下，在一个层中未吸收的光在第一层正下方的下一层中吸收，以此类推。能量转换器可达到约50％的总效率。由于使用外延层的纵向堆叠来避免复杂的电路，所以与需要半导体光吸收部之间的相互连接的现有技术相比，存在最小的电流损失。
在第一方面，提供了能量转换器，能量转换器包括：一个或多个GaInNAsSb结；第一半导体层，覆盖一个或多个GaInNAsSb结；以及第二半导体层，位于一个或多个GaInNAsSb结下方；其中，该一个或多个GaInNAsSb结、第一半导体层和第二半导体层的厚度选择成在照射波长下提供共振腔。
附图说明
本文中描述的附图仅为了图示的目的。附图不旨在限制本公开的范围。
图1示出了单片式多结能量转换器的实施方式，其中，E1、E2和E3表示具有相同带隙的半导体材料。
图2A和2B分别示出了根据某些实施方式的具有双分布式布拉格反射器(DBR)的单结共振能量转换器和三结共振能量转换器。
图3A和3B分别示出了根据某些实施方式的具有单个DBR的单结共振能量转换器和三结共振能量转换器。
图4A和4B分别示出了根据某些实施方式的具有顶部DBR和背面镜的单结共振能量转换器和三结共振能量转换器。
图5A和5B分别示出了根据某些实施方式的具有背面镜的单结共振能量转换器和三结共振能量转换器。
图6A和6B分别示出了根据某些实施方式的具有两个DBR和顶部衬底的单结共振能量转换器和三结共振能量转换器。
图7A和8B分别示出了根据某些实施方式的具有覆盖顶部DBR的衬底和背面镜的单结共振能量转换器和三结共振能量转换器。
图8A和8B分别示出了根据某些实施方式的具有两个DBR和连接至横向导电层(LCL)的蚀刻背面接触件的单结共振能量转换器和三结共振能量转换器。
图9示出了根据某些实施方式的具有互相串联连接的多个能量转换器的Pi结构的俯视图。
图10A和图10B示出了根据某些实施方式的具有双通配置且特征为具有单区(图10A)或四象限区(10B)的三结能量转换器。
图11A和图11B分别示出了图10A和图10B中示意性示出的三结能量转换器的俯视图的照片。
图12示出了对于单晶格匹配GaInNAsSb结能量转换器、双晶格匹配GaInNAsSb结能量转换器和三晶格匹配GaInNAsSb结能量转换器，在最大功率点(Mpp)下的效率、输出功率和电压，其作为激光输入功率的函数。
图13示出了对于单晶格匹配GaInNAsSb结能量转换器、双晶格匹配GaInNAsSb结能量转换器和三晶格匹配GaInNAsSb结能量转换器的归一化电流密度(J)，其作为针对许多激光输入功率水平的电压的函数。
现在详细叙述本公开的实施方式。虽然对本公开的某些实施方式进行了描述，但是将理解的是，所进行的描述不旨在将本公开的实施方式限于所公开的实施方式。相反，对本公开的实施方式的叙述旨在覆盖如可包括在如由所附权利要求限定的本公开的实施方式的精神和范围内的替代、修改和等同。
具体实施方式
在由本公开提供的某些实施方式中，在衬底(诸如GaInNAs、GaInNAsSb、GaAs、Ge、GaSb、InP或本领域中已知的其它衬底)上形成的相同半导体材料的两个或更多个外延层堆叠在彼此的顶部上，其中，在各外延层之间具有隧道结。图1示出了单片式多结能量转换器的实施方式，其中，E1、E2和E3表示具有相同带隙的半导体材料。每个外延层具有相同的带隙，该带隙与单色光源的能量大致匹配以最小化少数载流子和热量损耗。在某些实施方式中，光源到达与衬底相距最远的最上外延层。在某些实施方式中，外延层材料可以是稀氮材料，诸如GaInNAs或GaInNAsSb或本领域中已知的其它稀氮材料。在一些实施方式中，单色光源介于1微米至多达1.55微米之间，以及在某些实施方式中，光源为约1.3微米。虽然一部分电流可通过由一个或多个隧道结进行的光吸收而损失，但是在第一外延层中未被收集的光在第二外延层中收集，以此类推。这种装置的总效率可达到至少50％的能量效率，诸如介于50％至60％，或者介于50％至70％。在某些实施方式中，单结能量转换器的能量转换效率为至少20％，诸如介于20％至40％。在某些实施方式中，单结能量转换器的能量转换效率为至少30％，诸如介于30％至50％。在某些实施方式中，当用1.32微米的辐射照射时在介于约0.6W至约6W的输入功率下由本公开提供的三结装置呈现介于约23％至约25％的转换效率。
在某些实施方式中，在衬底(诸如GaInNAs、GaInNAsSb、GaAs、Ge、GaSb、InP或本领域中已知的其它衬底)上形成的相同半导体材料的三个或更多个外延层堆叠在彼此的顶部上，其中，在各外延层之间具有隧道结。增加能量转换器装置中的结的数目可使填充因子增大、开路电压(Voc)增大以及短路电流(Jsc)减小。各外延层具有相同的带隙，该带隙与单色光源的能量大致匹配以最小化少数载流子和热量损耗。在某些实施方式中，光源首先到达与衬底相距最近的最底部的外延层。衬底具有比外延层的带隙高的带隙。只要衬底具有比外延层的带隙高的带隙，光源就会穿过衬底并且被外延层吸收。这种实施方式的示例采用GaInNAs外延层(带隙为0.95eV)和GaAs衬底(带隙为1.42eV)。在该示例中的光源将不会被GaAs衬底吸收而将被GaInNAs活性区吸收。散热器可联接至最上外延层的顶部，并且可用作冷却装置以及防止由于过热而引起的缺陷。在一些实施方式中，外延层材料可以是稀氮材料，诸如GaInNAs或GaInNAsSb或本领域中已知的其它稀氮材料。在一些实施方式中，单色光源具有介于1微米至多达1.55微米之间的波长，在某些实施方式中，单色光源具有介于1微米至1.4微米的波长，以及在某些实施方式中，光源为约1.3微米。虽然一部分电流可通过由一个或多个隧道结进行的光吸收而损失，但是在第一外延层中未被收集的光可在第二外延层中收集，以此类推。这种装置的总效率可至少达到50％的能量效率。
在某些实施方式中，一个或多个光吸收层包括GaInNAsSb。在一些实施方式中，GaInNAsSb结包括Ga1-xInxNyAs1-y-zSbz，其中，x、y和z的值是0≤x≤0.24、0.01≤y≤0.07和0.001≤z≤0.20；在某些实施方式中，0.02≤x≤0.24、0.01≤y≤0.07和0.001≤z≤0.03；在某些实施方式中，0.02≤x≤0.18、0.01≤y≤0.04和0.001≤z≤0.03；在某些实施方式中，0.08≤x≤0.18、0.025≤y≤0.04和0.001≤z≤0.03；以及在某些实施方式中，0.06≤x≤0.20、0.02≤y≤0.05和0.005≤z≤0.02。
在一些实施方式中，GaInNAsSb结包括Ga1-xInxNyAs1-y-zSbz，其中，x、y和z的值是0≤x≤0.18、0.001≤y≤0.05和0.001≤z≤0.15，以及在某些实施方式中，0≤x≤0.18、0.001≤y≤0.05和0.001≤z≤0.03；在某些实施方式中，0.02≤x≤0.18、0.005≤y≤0.04和0.001≤z≤0.03；在某些实施方式中，0.04≤x≤0.18、0.01≤y≤0.04和0.001≤z≤0.03；在某些实施方式中，0.06≤x≤0.18、0.015≤y≤0.04和0.001≤z≤0.03；以及在某些实施方式中，0.08≤x≤0.18、0.025≤y≤0.04和0.001≤z≤0.03。
在某些实施方式中，GaInNAsSb结特征为具有0.92eV的带隙并且包括Ga1- xInxNyAs1-y-zSbz，其中，x、y和z的值是：x是0.175，y是0.04，以及0.012≤z≤0.019。
在某些实施方式中，GaInNAsSb结特征为具有0.90eV的带隙并且包括Ga1- xInxNyAs1-y-zSbz，其中，x、y和z的值是：x是0.18，y是0.045，以及0.012≤z≤0.019。
在某些实施方式中，GaInNAsSb包括Ga1-xInxNyAs1-y-zSbz，其中，x、y和z的值是：0.13≤x≤0.19、0.03≤y≤0.048和0.007≤z≤0.02。
在某些实施方式中，GaInNAsSb结包括Ga1-xInxNyAs1-y-zSbz，其中，x、y和z的值选择成具有与用于将能量输送至装置的辐射的能量匹配或近似匹配的带隙。在某些实施方式中，GaInNAsSb结与GaAs衬底基本上晶格匹配。应注意的是，“基本上晶格匹配”通常理解为当材料以大于100nm的厚度存在时材料在其完全弛豫的状态下的面内晶格常数相差小于0.6％。另外，如本文中所使用的基本上互相晶格匹配的子单元意指子单元中以大于100nm的厚度存在的所有材料在其完全弛豫的状态下具有相差小于0.6％的平面内晶格常数。
在某些实施方式中，能量转换器中的外延层中的每个与GaAs衬底晶格匹配。
在某些实施方式中，使用不同折射率的分层材料可在结构内产生分布式布拉格反射器(DBR)并且用于增加能量转换器的效率。一个这种示例将稀氮材料用作结构的外延堆叠中的吸收材料，在某些实施方式中，稀氮材料是GaInNAsSb材料。腔可通过使用诸如GaAs/AlGaAs的材料作为在稀氮层之下且在衬底之上的DBR以及通过使用在稀氮层之上形成的可由半导体或多种氧化物制成的另一DBR来形成。
在某些实施方式中，在衬底具有比吸收材料高的带隙的情况中，背侧金属可用作结构式镜，结构式镜允许未吸收的光从背面金属反射以在位于之上的外延层中被再吸收。图2A和图2B中示出了使用双通配置的共振腔能量转换器的示例。图2A示出了具有顶部DBR和底部DBR的单结共振腔。单个GaInNAsSb结布置在两个DBR之间，并且通过半导体层d1和半导体层d2与DBR分开。半导体层可由不明显吸收入射辐射且可以与GaAs和吸收层晶格匹配的材料形成，而且，在某些实施方式中，该材料可以为GaAs。可将d1、d2以及GaInNAsSb结的厚度选择成提供处于入射辐射的波长的驻波。图2B示出了与图2A所示的配置类似的配置，但是该配置包括多个GaInNAsSb结，其中，多个GaInNAsSb结中的每个由隧道结分开。GaInNAsSb结的厚度可以为介于约100nm至约1微米。在某些实施方式中，衬底是半绝缘GaAs衬底或n型掺杂GaAs衬底，其具有背面金属以作为结构的最底层。
为了供1微米至1.55微米的辐射使用，镜层可以是例如金或金/镍合金。
在某些实施方式中，能量转换器结构使用一个DBR而不使用两个DBR。图3A和图3B中示出了采用单个DBR的共振能量转换器。图3A示出了布置在两个半导体层d1和d2之间的单个GaInNAsSb结。这些层覆盖底部DBR，底部DBR覆盖衬底。装置的上表面(诸如层d1与入射辐射面对的上表面)可涂有抗反射涂覆物。抗反射涂覆物可针对入射辐射的波长进行优化以减少散射。图3B示出了具有多个GaInNAsSb结的单DBR共振腔配置。
在某些实施方式中，能量转换器结构包括一个DBR和在衬底之下的背面镜。这种装置配置在图4A、图4B、图5A和图5B中示出。图4A和图4B示出了这样的能量转换器，该能量转换器具有顶部DBR、包括在两个半导体层d1和d2之间的单个GaInNAsSb结的共振腔、以及在半导体层d2下方的背面镜。在某些实施方式中，背面镜还可用作电接触件。图4B中示出了多结能量转换器，其中，多个GaInNAsSb结布置在顶部DBR与背面镜之间。
在图5A和图5B中所示的能量转换器中，DBR和背面镜均在装置的底部处使用。在该配置中，与具有底部DBR而不具有背面镜的配置相比，DBR的厚度可减小。如同其它装置一样，层D1的上表面可包括抗反射涂覆物。在某些实施方式中，衬底被移除，并且在衬底的位置处将金属用作背面镜。在这种结构中，光穿过顶部DBR，然后经过外延层，然后经过底部DBR并且最后到达背面镜。在这些实施方式中，外延层包括GaInNAsSb以作为一个或多个吸收层。
在某些实施方式中，结构的最上层包括在外延层之上的空气-半导体界面，外延层可包括一个或多个GaInNAsSb层。在外延层之下是覆盖背面镜的底部DBR。在这些实施方式中，光到达空气-半导体界面的最上层并且传播至外延层，然后传播至DBR，并且最后在由背面镜反射之后往回反射通过该结构。
图6A和图6B中示出了具有两个DBR和顶部衬底层的共振腔配置。顶部衬底层对于用于产生能量的入射辐射基本上是透明的。在某些实施方式中，衬底可以是诸如n型GaAs的GaAs并且可具有介于约150微米至约250微米的厚度，诸如介于175微米至225微米。衬底的厚度可例如通过研磨或蚀刻变薄以使吸收最小化，并且在这些实施方式中，衬底的厚度可以是50微米或小于50微米。在某些实施方式中，底部DBR可结合至散热器。将DBR直接结合至散热器可降低能量转换器的温度。
图7A和图7B示出了与图6A和图6B中所示的装置配置类似的、但是用背面镜来代替底部DBR的装置配置。
在某些实施方式中，结构具有腔内接触件以避免来自DBR结构的电阻率。接触件通过绕过DBR结构的横向传输导电层(LCL)在腔中制造。图8A和图8B中示出了具有腔内接触件的能量转换器。在这些装置结构中，外延层被蚀刻到覆盖底部DBR的LCL或蚀刻到覆盖半导体层d1的LCL。LCL提高到电接触件(背面接触件和顶部接触件)的载流子迁移率，并且可例如由诸如n型GaAs的掺杂GaAs形成。LCL和类似的蚀刻背面电接触件可应用于由本公开提供的其它装置结构。
在某些实施方式中，结构可反向地形成。在这些情况中，在使用多种剥离技术的生长之后，衬底可变薄至某一厚度或者被移除。在穿过外延层之前，光首先穿过衬底。在这种结构中，衬底的带隙大于外延层的带隙。
包括多个串联连接的子单元的多个光伏转换器可构造成增大输出电压。子单元可并联连接以增大输出电流。示例为如图9所示的Pi结构。红外吸收体通常特征为具有低电压；然而，在某些应用中，理想的是增大能量转换器的电压。这可通过串联连接多个能量转换器实现。一个这种配置称为Pi结构，在Pi结构中，多个能量转换器单元布置成围绕中心轴的同心环，其中每个单元由绝缘体分离开，而且多个单元或多个单元的子装置串联连接，该配置的俯视图在图9中示出。这种结构可使用单结制造并且提供高密度的单元。较高的电压提供改善的DC-DC转换器效率和较低的欧姆损耗。虽然之后电流可产生欧姆损耗，但是欧姆损耗可以被补偿，这是因为增加数量的子单元使电流减小。
图10A和图10B中示出了其它装置结构。图10A示出了单个三结双通能量转换器。图10B示出了四象限三结双通能量转换器。装置的尺寸为300微米乘300微米。四个转换器可互相串联连接以增大电压和/或减小电流。互相串联连接还可以降低对入射辐射的空间定向的敏感性。另外，对于大面积能量转换器，将收集区分成象限或其它子区域可通过使电接触件更靠近能量产生表面来降低欧姆损耗。图11A和图11B中示出了单象限装置和四象限装置的照片。
图10A、图10B、图11A和图11B中所示的能量转换器使用GaInNAsSb结制造。所有的外延层与GaAs衬底晶格匹配。在GaAs衬底的底部处布置有背面镜。三结结构的共振腔配置为支持在约1.3微米下的驻波，诸如在1.32微米下或在1.342微米下的驻波。对于配置为在1.32微米下进行能量转换的装置，GaInNAsSb结的带隙为约0.92eV。确定的是，这种装置呈现介于约65％至约75％的填充因子、介于约1.47V至约1.5V的Voc和介于约0.6A至约1.4A的Jsc。能量转换效率在介于约0.6W至约6W的输入功率下为介于约23％至25％。
在某些实施方式中，相同半导体材料的两个或更多个外延层具有变化的厚度。具体地，外延层越远离光源，则其厚度可越小。在某些实施方式中，各外延层中的厚度可相同。在某些实施方式中，外延层的厚度是变化的，外延层的厚度根据光源位置增大或减小。
在一些实施方式中，在最上外延层的顶部上存在窗层。
在某些实施方式中，整个装置的厚度或高度可以在1微米至高达10微米之间，能量转换器的面积可以在例如100微米×100微米至高达1厘米×1厘米之间或者更大。例如，总面积介于10-4cm2至1cm2。每个外延层的厚度可介于几百纳米至几微米之间。
图12示出了对于单GaInNAsSb结(空心圆)能量转换器、双GaInNAsSb结(正方形)能量转换器和三GaInNAsSb结(加号)能量转换器，在最大功率点(Mpp)下的效率、输出功率和电压，其作为激光输入功率的函数。
图13示出了对于单GaInNAsSb结(空心圆)能量转换器、双GaInNAsSb结(正方形)能量转换器和三GaInNAsSb结(加号)能量转换器的归一化电流密度(J)，其作为针对许多激光输入功率水平的电压的函数。
最后，应注意的是，存在实现本文中公开的实施方式的可替代方式。相应地，本实施方式应被理解为说明性的而非限制性的。此外，权利要求不应限于本文中所给出的细节，而应被赋予其全部范围和等同的权利。

Claims (17)

1.能量转换器，包括：
一个或多个GaInNAsSb结；
第一半导体层，覆盖所述一个或多个GaInNAsSb结；以及
第二半导体层，位于所述一个或多个GaInNAsSb结下方；
其中，所述一个或多个GaInNAsSb结、所述第一半导体层和所述第二半导体层的厚度选择成在照射波长下提供共振腔。
2.根据权利要求1所述的能量转换器，其中，所述一个或多个GaInNAsSb结中的每个：
与GaAs晶格匹配；
包括Ga1-xInxNyAs1-y-zSbz，其中，x、y和z的值为0≤x≤0.24、0.01≤y≤0.07和0.001≤z≤0.20；以及
特征为具有与所述照射波长的能量对应的带隙。
3.根据权利要求1所述的能量转换器，其中，所述波长介于1.3微米至1.55微米。
4.根据权利要求1所述的能量转换器，其中，所述波长介于1.30微米至1.35微米。
5.根据权利要求1所述的能量转换器，包括：
第一分布式布拉格反射器，覆盖所述第一半导体层；
第二分布式布拉格反射器，位于所述第二半导体层下方；或者包括：
覆盖所述第一半导体层的第一分布式布拉格反射器和位于所述第二半导体层下方的第二分布式布拉格反射器。
6.根据权利要求1所述的能量转换器，包括：
第一分布式布拉格反射器，覆盖所述第一半导体层；
第二分布式布拉格反射器，位于所述第二半导体层下方；以及
衬底，位于所述第二分布式布拉格反射器下方。
7.根据权利要求1所述的能量转换器，包括：
第二分布式布拉格反射器，位于所述第二半导体层下方；以及
衬底，位于所述第二分布式布拉格反射器下方。
8.根据权利要求7所述的能量转换器，包括覆盖所述第一半导体层的抗反射涂覆物。
9.根据权利要求1所述的能量转换器，包括：
第一分布式布拉格反射器，覆盖所述第一半导体层；以及
背面镜，位于所述第二半导体层下方。
10.根据权利要求1所述的能量转换器，包括：
第二分布式布拉格反射器，位于所述第二半导体层下方；以及
背面镜，位于所述第二分布式布拉格反射器下方。
11.根据权利要求1所述的能量转换器，包括：
第一分布式布拉格反射器，覆盖所述第一半导体层；
第二分布式布拉格反射器，位于所述第二半导体层下方；以及
衬底，覆盖所述第一分布式布拉格反射器。
12.根据权利要求1所述的能量转换器，包括：
第一分布式布拉格反射器，覆盖所述第一半导体层；
衬底，覆盖所述第一分布式布拉格反射器；以及
背面镜，位于所述第二半导体层下方。
13.根据权利要求1所述的能量转换器，包括：
第一横向导电层，覆盖所述第一半导体层；以及
第二横向导电层，覆盖所述第二半导体层。
14.根据权利要求13所述的能量转换器，包括：
第一电接触件，连接至覆盖所述第一半导体层的所述第一横向导电层；以及
第二电接触件，连接至覆盖所述第二半导体层的所述第二横向导电层。
15.根据权利要求1所述的能量转换器，其特征在于对于介于0.6W至6W的照射输入功率，效率为至少20％。
16.能量转换器，包括以Pi结构配置的多个根据权利要求1所述的能量转换器。
17.能量转换器，包括互相串联连接的多个根据权利要求1所述的能量转换器。
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