SA516371606B1 - محول قدرة أحادي ومتعدد الوصلات - Google Patents

محول قدرة أحادي ومتعدد الوصلات Download PDF

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SA516371606B1
SA516371606B1 SA516371606A SA516371606A SA516371606B1 SA 516371606 B1 SA516371606 B1 SA 516371606B1 SA 516371606 A SA516371606 A SA 516371606A SA 516371606 A SA516371606 A SA 516371606A SA 516371606 B1 SA516371606 B1 SA 516371606B1
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سواريز آرياس فيران
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سولار جونكشن كوربوريشن
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Abstract

يتعلق الاختراع بالكشف عن وسائل تحويل قدرة فجوة رنانة لتحويل اإشعاع إلى مدى من الطول الموجي من 1 ميكرون إلى 1.55 ميكرون. يمكن تشكيل محولات القدرة بالفجوة الرنانة من واحدة أو أكثر من وصلات GaInNAsSb متناظرة من الشبكات والتي تشتمل على وسائل حارفة من نوع Bragg موزعة و/أو أسطح عاكسة لزيادة فعالية تحويل القدرة. شكل2ب.

Description

محول قدرة أحادي ومتعدد الوصلات ‎Monolithic Multijunction Power Converter‏ الوصف الكامل خلفية الاختراع يتعلق هذا الكشف بمجال تحويل القدرة. يمكن استخدام محولات القدرة في عدد من التطبيقات من أجل شحن الأجهزة الالكترونية؛ مثل الهواتف المحمولة؛ والأنظمة الصوتية؛ والمسارح المنزلية؛ أو أية أجهزة الكترونية أخرى؛ من مصدر طاقة. من المعروف جيداً فى المجال أن كميات الفقد الأومى تتعلق بشكل عكسى بالزيادة
فى الفولطية وتتعلق بشكل مباشر بالزيادة فى التيار. فمن المفيد إذاً زيادة عامل الامتلاء لأجهزة محولات القدرة عن طريق زيادة فولطية الأجهزة. تتضمن محولات القدرة التي ذكرت من قبل في المجال محولات طبقة منفردة متصلة بشكل تسلسلي بطريقة أحادية مُشكّلة من وافرات أشباه موصلات؛ ‎Jie‏ 68/5. قد تكون محولات القدرة هذه
0 متصلة في تسلسل عن طريق الأسلاك أو مقسمة عن طريق تصنيع المحول على ركيزة شبه عازلة باستخدام قنوات عازلة لتوفير العزل الكهريائي بين كل محول مقسم. ويكون مصدر الطاقة لمحولات الطاقة هذه عبارة عن ضوء أحادي اللون » مثل ليزر يعمل عند طول موجي أو طاقة خاصة. وفي هذا التطبيق الخاص؛ يكون ‎spall‏ الأحادي اللون بين 1 ميكرون إلى 1.55 ميكرون» في منطقة الأشعة تحت الحمراء من الطيف. يكون القرب من 1 ميكرون أقل فائدة
5 للاستخدام ‎Jil‏ بسبب المخاطر المحتملة لمصدر الضوءٍ على عين الانسان؛ لذلك فإن تركيز النماذج الموضحة هنا يكون على مصادر الضوء بين 1.55-1.3 ميكرون 3 وفي نماذج ‎(dure‏ ‏حول 1.3 ميكرون. إلا أنه؛ قد يعزّل ذوو الخبرة في المجال بسهولة الاختراع الذي تم الكشف ‎aie‏ ‏هنا لتحويل ضوءء خاص بمجموعة من الأطوال الموجية. الوصف العام للاختراع

Claims (1)

  1. عناصر الحماية 1- محول طاقة ليزر ‎laser power converter‏ ذو تجويف رنان ‎resonant cavity‏ يشتمل على: عاكس براغ ‎Bragg Reflector‏ موزّع سفلي ‎bottom Distributed‏ ؛ طبقة شبه موصلة ‎semiconductor layer‏ أولى فوق عاكس براغ ‎Bragg Reflector‏ الموزع السفلي ‎tbottom Distributed‏ وصلات 68107110555 متعددة فوق الطبقة شبه الموصلة ‎semiconductor layer‏ الأولى؛ حيث يكون لكل من وصلات 8101/1555 مفصولة بواسطة وصلة نفقية ‎«tunnel junction‏ وحيث يكون لكل من وصلات ‎GalNNASSD‏ شمك من 100 نانومتر إلى 1 ميكرون؛ طبقة شبه موصلة ‎semiconductor layer‏ ثانية أسفل وصلات ‎¢GalnNAsSb‏ و 0 عاكس براغ ‎Bragg Reflector‏ موزّع علوي ‎top Distributed‏ فوق الطبقة شبه الموصلة ‎semiconductor layer‏ الثانية حيث تكون كل من الطبقة شبه ‎semiconductor layer dba gall‏ الأولى والطبقة شبه الموصلة ‎semiconductor layer‏ الثانية هي ‎.GaAs‏ ‏5 2- محول طاقة الليزر ‎laser power converter‏ ذو التجويف الرنان وفقًا لعنصر الحماية رقم ‎Gua «(1)‏ تكون كل من الطبقة شبه الموصلة ‎semiconductor layer‏ الأولى والطبقة شبه الموصلة ‎semiconductor layer‏ الثانية ‎dail se‏ شبكيًا ل ‎GaAs‏ ووصلات ‎.GalnNAsSSb‏ ‏3- محول طاقة الليزر ‎laser power converter‏ ذو التجويف الرنان ‎Gg‏ لعنصر الحماية رقم 0 (1)؛ حيث يتم تحديدشمك ‎JS‏ من الطبقة شبه الموصلة ‎semiconductor layer‏ الأولى؛ والطبقة شبه الموصلة ‎semiconductor layer‏ الثانية؛ ووصلات 817118550 بحيث يتم توفير ‎dase‏ مستقرة ‎standing wave‏ عند طول موجي عارض .
    ‎٠ 1 5 —‏ - طبقة نافذة(أخبارية) ‏ وصلة بفجوة نطاق - .1 وصلة بفجوة نطاق ج 12 وصلة بفجوة نطاق د.ا نا 34 ‎J‏ \
    2 8 ‏كي‎ 9 ‏مح‎ 5 0 ‏جاب‎ ST nd TH : pad 0 ‏ا‎ 8 2 5 ‏ا‎
    ‎3 . ‏خخخ(«‎ :ٍ 0:0 - | Sey - Nh 3, A Naa : oo mn ‏ا 0 ا‎ 5 ْ nt 0 ‏ما ا‎ Wi NN Nill end LL nN CL I. : 0 ‏ا‎ ْ LL \ LL 8 LL \ LL 3 LL \ LL % LL \ LL LL 0 ‏ا‎
    ‎. i LL ‏ا يم ل‎ 0 ‏ابد 0 ا‎ ‏ا ا‎ ' 4 ‏ا‎ SR Hq, LL MD . a ‘ ‏شكا‎ ‏بي مح‎
    0 ‏ين‎ 3 << - = ) : 1 _ © 3 8 ‏ض‎ 3 i ‏رص‎ ‎14 x hie Buby _ ْ:ٍ an = I M : pe #5 1 ‏و‎ RR ne : 0 2 | - Tm * i oo :
    3 . 10 ‏ض ا‎ 7 TTT i
    TI . . i Lo 1 ‏ا‎ ٍ ‏ا ا ا‎ ٍّ ‏ا ا‎ Lo \ hi | Lo — hi | Lo Sh hi | Lo — 0 ‏ا ا ا‎ 3 3, LH LL 3 x LH LL 3 hh NA ١ = LH nn 3 ‏ااا ل‎ - ‏اا‎ ‎TH ‏ا‎ ‎; WL 7 ‏اا‎ ‎3 IN ‏ا‎ ‎1 v ‏نشكا‎
    ٠ 1 8 ٠ 33 a Alo ‏الوصلاث‎ FOE TEIN N Lo Co OF ‏صو 1 سطح بيني هواء - شية موضل‎ IE Ea ssw GalnNAagsh LE ee ‏ص‎ Gain NAGS ْ 2 ‏د‎ : \ Ya INDIR ‏لاير ا‎ YY © en DBR AI gs: _ rrr re \ | \ ‏ركيزة 8 ركيزة ض‎ fw ‏الشكل‎ or ‏الشكل‎
    ٠ 1 9 ٠
    % £2 5 - = ) 4 a 72 3 ‏و‎ Lil J 1 ‏ا‎ 0 0 ‏ا‎ =» NN Nn £8 * LL \ = ‏أ‎ 0 0 a a 4 @ 0 0 jn NN 0 0 2 nn nen it ‏شكل‎ ‎= 3 an = Ta - sa 4 = Gi | > 4, a 1 2 1 3 : ١ EEE Hi ‏ااا‎ 0 23 > ‏اد ا‎ 0 La NN LN = ‏ب‎ A Aaa 0 7 ‏ااا ا ”لد‎ 0 ‏ا ا‎ 0 1 ‏ا‎ NN $03 ; LL ‏ا سا‎ ‏ا ا‎ wf ‏شكل‎
    — 0 2 — متعددة الوصلات وصلة منفردة صو | صو 1 8 اسطح بيني هواء - شبه موصل ا ‎hl >‏ ‎N\‏ / ‎N‏ ¢ ‎Va - i Ya‏ : = ‎SE‏ عق الج ‎FE‏ ع 1 ا اا ا ‎EE‏ إداة ‏ ب 1 ااا مز ‎١‏ ا لقان ‎ow‏ ‎[RR‏ د ‎eR DBR BG DBR‏ ند لبد ‎TT‏ ‎oe laste RT) Ga‏ شكل دب شكل ذا
    ٠ 2 1 ٠ ‏مستعددة الوصلات وصلة منفردة‎ ‏هخ‎ 8
    1 6.2 \ ‏ضوع‎ ‎A v — ‏الطحن أو الحفر | ركيزة الطحن أو الحفر‎ - ~ ‏محدقة‎ Stal 3 ‏محهدد‎ Slow NNN Ee DBR ANY 1 ‏عليا‎ DBR IgE I = LL Gee ‏لا تتاف‎ ge GalnNASSH : Po ٍ LL ‏د‎ ‏ا ل/3 سفلى ا ااا‎ is DBR ‏ا‎ A RY Jal ‏الشكل 1ب‎
    ٠ 2 2 ٠ Ba Els Als ‏متعددة الوصلات‎ ‏سوا | | صق‎ : 8 8 ‏ا ام ا‎ vd - ‏الطحن أو الحفن‎ mv | ‏الطحن أو الحفر‎ ‏محدد | كد‎ lend = ‏لمك مهد‎ ‏عليه ااا 088لا ا ااام‎ N\ : N NEE =] mm] ] ‏ااا د‎ Son ESE HE ‏اا ا‎ ES HE ERE - _— - x, CTR ‏خلفية اال‎ 8 pe Fe ‏مراة خلفية‎ vo led a
    ٠ 2 3 ٠ Ba sala alia ‏تجددة الاصلات‎ ‏سمطجية صو‎ EES { i | || SEE ةيحطس ‏نقطة تلامس‎ ‏لممأنس اف‎ © (lus pBR Lert DOSY ‏هاه ال‎ NE "Ta MERE | We DBR X 1 0 i ERE a 0 ً a i IE 8 nr ‏م ال 8 ملو الا ات‎ : ‏اد‎ EN JRE RA CRN 3 N | E ‏ا اا‎ Y 8 | Le] NE IR ad Gebel TY st \\\\\ ‏د لد‎ 8 BN Se § aa... NNN eis DBR Ana ‏يي نا‎ ‏ال ال‎ MLTR oes DBR = EAE TON 3 ‏الي ينبا‎ ‏ب شكلم‎ i Jad ‏“ب‎ 3 a
    4 a 2) 0 0 3 ‏ال"‎ ‎1 ْ A \ ‏اسم‎ ‎EY ‏م‎ 0 \Y ‏م‎ ony ‏ل الب الي‎ ‏مي ان الك‎ ‏ب ل‎ NA Set my o Vid al : Na RN a TNA de a ae ‏اا‎ ‎ee Nam A aN Le ‏و اا‎ 2 NLP ‏ا‎ ‎Yay ‎EL a IC» Vann” ‏شكل؟‎
    لجا اا الح هس ‎a‏ ب نقطة تلامس عليا بل ‎١‏ ارمس 0 ‎oF sm BEB‏ الى 2 ‎SE‏ لا ‎Pwd |)‏ : شار ‎LLL a Le 4‏ 4 4 \ ال لاا ‎Ld‏ ‎Bl a‏ معدنية شكل ١٠ب‏ شكل ‎!٠١‏
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    لاله الهيلة السعودية الملضية الفكرية ا ‎Sued Authority for intallentual Property‏ ‎RE‏ .¥ + \ ا 0 § 8 ‎Ss o‏ + < م ‎SNE‏ اج > عي كي الج ‎TE I UN BE Ca‏ ‎a‏ ةا ‎ww‏ جيثة > ‎Ld Ed H Ed - 2 Ld‏ وذلك بشرط تسديد المقابل المالي السنوي للبراءة وعدم بطلانها ‎of‏ سقوطها لمخالفتها ع لأي من أحكام نظام براءات الاختراع والتصميمات التخطيطية للدارات المتكاملة والأصناف ع النباتية والنماذج الصناعية أو لائحته التنفيذية. ‎Ad‏ ‏صادرة عن + ب ب ‎٠.‏ ب الهيئة السعودية للملكية الفكرية > > > فهذا ص ب ‎101١‏ .| لريا ‎1*١ v=‏ ؛ المملكة | لعربية | لسعودية ‎SAIP@SAIP.GOV.SA‏
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