TW201539772A - 單片多接面換能器 - Google Patents

單片多接面換能器 Download PDF

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TW201539772A
TW201539772A TW104103975A TW104103975A TW201539772A TW 201539772 A TW201539772 A TW 201539772A TW 104103975 A TW104103975 A TW 104103975A TW 104103975 A TW104103975 A TW 104103975A TW 201539772 A TW201539772 A TW 201539772A
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semiconductor layer
transducer
item
bragg reflector
gainnassb
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TWI656651B (zh
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Arias Ferran Suarez
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Solar Junction Corp
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Abstract

公開了一種用於轉換1微米到1.55微米波長範圍的輻照的諧振腔換能器。諧振腔換能器可以由一個或更多個晶格匹配的GaInNAsSb接面形成，並且可以包括用於提高能量轉換效率的分散式布拉格反射器和/或反射鏡面。

Description

單片多接面換能器 【0001】
本公開涉及能量轉換（power conversion）的領域。
 【0002】
換能器（power converter）可以在由電源為電子設備（如行動電話、音訊系統、家庭影院或任何其他電子設備）充電的許多應用中使用。本領域中所熟知的是歐姆損耗與電壓增加負相關而與電流增加正相關。於是通過增大設備的電壓來增大能量轉換裝置的填充因數（fill factor）是有利的。
【0003】
本領域中現有的換能器包括由半導體晶片、如GaAs製成的單片串聯的單層轉換器。這種換能器可以通過接線串聯連接，或通過利用絕緣槽在半絕緣基底上製造轉換器來分區以在每個分區的轉換器之間提供電絕緣。用於這種換能器的能源是單色光，如以特定波長或能量工作的雷射。在該具體應用中。單色光為1微米到1.55微米，在光譜的紅外區域中。由於光源對人眼的潛在危險，更接近1微米的光對於家庭使用是不利的，因此本文中公開的實施方案的重點在1.3微米到1.55微米之間並且在一些實施方案中為約1.3微米的光源上。但是，本領域技術人員可以容易地修改本文中所公開的發明以轉換許多波長的光。
 【0004】
本發明包括一種小型的、單片多接面換能器，其具有堆疊在彼此之上的、相同材料的兩個或更多個磊晶層（epitaxial layer），每個磊晶層之間具有穿隧接面。因為磊晶層堆疊在彼此之上，所以使每個磊晶層變薄以收集最大量的光，並且按順序轉換能量以通過增大整個裝置的電壓和減少（隨電流的增大而增大的）歐姆損耗來增大填充因數。考慮到堆疊的磊晶層，在一個層中沒有被吸收的光被位於第一層正下方的下一個層吸收，以此類推。換能器可以達到約50%的總效率。考慮到利用磊晶層的垂直堆疊避免了複雜的電路，與在半導體光吸收區之間需要互連的現有技術相比，在這些裝置中有最小的電流損耗。
【0005】
在第一方面，提供了一種換能器，其包括：一個或更多個GaInNAsSb接面；位於一個或更多個GaInNAsSb接面上面的第一半導體層；和位於一個或更多個GaInNAsSb接面下面的第二半導體層；其中，一個或更多個GaInNAsSb接面、第一半導體層和第二半導體層的厚度選擇為提供照射波長的諧振腔。
 【0037】
d1、d2‧‧‧半導體層
【0006】
本文中描述的圖式僅用於說明目的。圖式並不旨在限制本公開的範圍。
　　圖1示出了單片多接面換能器的一種實施方案，其中E1 、E2 和E3 表示具有相同能隙的半導體材料。
　　圖2A和2B分別示出了根據一些實施方案的具有雙重分散式布拉格反射器（distributed Bragg reflector，DBR）的單接面和三接面諧振換能器。
　　圖3A和3B分別示出了根據一些實施方案的具有單個DBR的單接面和三接面諧振換能器。
　　圖4A和4B分別示出了根據一些實施方案的具有頂部DBR和後反射鏡（back mirror）的單接面和三接面諧振換能器。
　　圖5A和5B分別示出了根據一些實施方案的具有後反射鏡的單接面和三接面諧振換能器。
　　圖6A和6B分別示出了根據一些實施方案的具有兩個DBR和一個頂部基底的單接面和三接面諧振換能器。
　　圖7A和7B分別示出了根據一些實施方案的具有位於頂部DBR上面的基底和後反射鏡的單接面和三接面諧振換能器。
　　圖8A和8B分別示出了根據一些實施方案的具有兩個DBR和與橫向導電層接觸的經蝕刻的背接觸的單接面和三接面諧振換能器。
　　圖9示出了根據一些實施方案的具有串聯互連的多個換能器的Pi結構的俯視圖。
　　圖10A和10B示出了根據一些實施方案的具有雙通道配置並且特徵為單區域（圖10A）或四象限區域（圖10B）的三接面換能器。
　　圖11A和11B分別示出了圖10A和10B中示意性示出的三接面換能器的俯視圖的照片。
　　圖12示出了單晶格匹配、雙晶格匹配和三晶格匹配的GaInNAsSb接面換能器的根據雷射輸入功率的在最大功率點（Mpp）處的效率、功率輸出和電壓。
　　圖13示出了單晶格匹配、雙晶格匹配和三晶格匹配的GaInNAsSb接面換能器的根據數個雷射輸入功率準位的電壓的正規化電流密度（J）。
 【0007】
現在詳細地參照本公開的實施方案。雖然描述了本公開的一些實施方案，但是應理解，其並不旨在將本公開的實施方案限制於所公開的實施方案。相反地，對本公開的實施方案的參照旨在涵蓋由申請專利範圍所限定的本公開的實施方案的精神和範圍之內可以包括的替代方案、修改方案和均等方案。
【0008】
在由本公開提供的一些實施方案中，在基底，如GaInNAs、GaInNAsSb、GaAs、Ge、GaSb、InP或本領域已知的其他基底上生長的相同半導體材料的兩個或更多個磊晶層利用各個磊晶層之間的穿隧接面堆疊在彼此之上。圖1示出了單片多接面換能器的一種實施方案，其中E1 、E2 和E3 表示具有相同能隙的半導體材料。每個磊晶層都具有相同的能隙，該能隙與單色光源的能量大致上匹配以使少數載子和熱損耗最小化。在一些實施方案中，光源到達離基底最遠的最上面的磊晶層。在一些實施方案中，磊晶層材料可以是稀釋氮化物（dilute-nitride）材料，如GaInNAs或GaInNAsSb或本領域已知的其他稀釋氮化物。在一些實施方案中，單色光源為1微米到最大1.55微米，而在一些實施方案中，光源為約1.3微米。雖然通過穿隧接面的光吸收會損失一些電流，但是在第一磊晶層中沒有被收集的光在第二磊晶層中被收集，以此類推。這種裝置的總效率可以達到至少50%的能量效率，如50%到60%或50%到70%。在一些實施方案中，單接面換能器的能量轉換效率為至少20%，如20%到40%。在一些實施方案中，單接面換能器的能量轉換效率為至少30%，如30%到50%。在一些實施方案中，當以1.32微米的輻照進行照射時，本公開提供的三接面裝置在約0.6W到約6W的輸入功率下顯示出約23%到約25%的轉換效率。
【0009】
在一些實施方案中，在基底，如GaInNAs、GaInNAsSb、GaAs、Ge、GaSb、InP或本領域已知的其他基底上生長的相同半導體材料的三個或更多個磊晶層利用各個磊晶層之間的穿隧接面堆疊在彼此之上。增加能量轉換裝置中接面的數量會導致增加的填充因數、增加的開路電壓（Voc）以及減小的短路電流（Jsc）。每個磊晶層都具有相同的能隙，該能隙與單色光源的能量大致上匹配以使少數載子和熱損耗最小化。在一些實施方案中，光源首先到達離基底最近的最下面的磊晶層。基底具有比磊晶層的能隙高的能隙。考慮到基底具有比磊晶層的能隙高的能隙，光源穿過基底並且光被磊晶層吸收。這樣的一個實例採用GaInNAs磊晶層（0.95eV的能隙）和GaAs基底（1.42eV的能隙）。該實例中的光源不會被GaAs基底吸收，而是會被GaInNAs活性區吸收。可以將散熱器耦接到最上面的磊晶層的頂部，並且其可以用於使裝置冷卻和防止由過熱引起的缺陷。在一些實施方案中，磊晶層材料可以是稀釋氮化物材料，如GaInNAs或GaInNAsSb或本領域已知的其他稀釋氮化物。在一些實施方案中，單色光源具有1微米到最大1.55微米的波長，在一些實施方案中為1微米到1.4微米，而在一些實施方案中，光源為約1.3微米。雖然通過穿隧接面的光吸收會損失一些電流，但是在第一磊晶層中沒有被收集的光可以在第二磊晶層中被收集，以此類推。這種裝置的總效率可以達到至少50%的能量效率。
【0010】
在一些實施方案中，光吸收層包含GaInNAsSb。在一些實施方案中，GaInNAsSb接面包含Ga1-x Inx Ny As1-y-z Sbz ，其中x、y和z的值為0≦x≦0.24，0.01≦y≦0.07，和0.001≦z≦0.20；在一些實施方案中，0.02≦x≦0.24，0.01≦y≦0.07，和0.001≦z≦0.03；在一些實施方案中，0.02≦x≦0.18，0.01≦y≦0.04，和0.001≦z≦0.03；在一些實施方案中，0.08≦x≦0.18，0.025≦y≦0.04，和0.001≦z≦0.03；和在一些實施方案中，0.06≦x≦0.20，0.02≦y≦0.05，和0.005≦z≦0.02。
【0011】
在一些實施方案中，GaInNAsSb接面包含Ga1-x Inx Ny As1-y-z Sbz ，其中x、y和z的值為0≦x≦0.18，0.001≦y≦0.05，和0.001≦z≦0.15，和在一些實施方案中，0≦x≦0.18，0.001≦y≦0.05，和0.001≦z≦0.03；在一些實施方案中，0.02≦x≦0.18，0.005≦y≦0.04，和0.001≦z≦0.03；在一些實施方案中，0.04≦x≦0.18，0.01≦y≦0.04，和0.001≦z≦0.03；在一些實施方案中，0.06≦x≦0.18，0.015≦y≦0.04，和0.001≦z≦0.03；和在一些實施方案中，0.08≦x≦0.18，0.025≦y≦0.04，和0.001≦z≦0.03。
【0012】
在一些實施方案中，GaInNAsSb接面的特徵在於0.92eV的能隙，並且包含Ga1-x Inx Ny As1-y-z Sbz ，其中x、y和z的值為：x為0.175，y為0.04，和0.012≦z≦0.019。
【0013】
在一些實施方案中，GaInNAsSb接面的特徵在於0.90eV的能隙，並且包含Ga1-x Inx Ny As1-y-z Sbz ，其中x、y和z的值為：x為0.18，y為0.045，和0.012≦z≦0.019。
【0014】
在一些實施方案中，GaInNAsSb接面包含Ga1-x Inx Ny As1-y-z Sbz ，其中x、y和z的值為：0.13≦x≦0.19，0.03≦y≦0.048，和0.007≦z≦0.02。
【0015】
在一些實施方案中，GaInNAsSb接面包含Ga1-x Inx Ny As1-y-z Sbz ，其中，x、y和z的值選擇為具有與用於將能量傳送到裝置的輻照的能量匹配或近似匹配的能隙。在一些實施方案中，GaInNAsSb接面與GaAs基底基本晶格匹配。應注意的是，“基本晶格匹配”的通常理解是當材料以大於100nm的厚度存在時，材料在其完全鬆弛狀態下的面內晶格常數差異小於0.6%。而且，如本文中所使用的彼此基本晶格匹配的子電池（subcell），表示子電池中以大於100nm的厚度存在的所有材料在其完全鬆弛的狀態下具有差異小於0.6%的面內晶格常數。
【0016】
在一些實施方案中，換能器中的每個磊晶層都與GaAs基底晶格匹配。
【0017】
在一些實施方案中，不同折射率的分層材料的使用可以在結構內產生分散式布拉格反射器（DBR），並且用於提高換能器的效率。一個這樣的實例使用稀釋氮化物材料作為結構的磊晶堆疊中的吸收材料，在一些實施方案中稀釋氮化物材料為GaInNAsSb材料。可以使用材料、如GaAs/AlGaAs在稀釋氮化物層下方和基底上方生長空腔作為DBR，和在稀釋氮化物上方生長另一個DBR，其可以是由半導體或一些氧化物製成的。
【0018】
在一些實施方案中，在基底比吸收材料具有更高的能隙時，背面金屬可以用作結構化反射鏡，其使得未被吸收的光能夠從背面金屬反射而在上方的磊晶層中被重新吸收。圖2A和圖2B中示出了使用雙通道配置的諧振腔換能器的實例。圖2A示出了具有頂部DBR和底部DBR的單接面諧振腔。單GaInNAsSb接面佈置在兩個DBR之間，並且通過半導體層d1和d2與DBR分隔開。半導體層可以由不明顯地吸收入射輻照、並且可以與GaAs和吸收層晶格匹配、並且在一些實施方案中可以是GaAs的材料形成。d1、d2和GaInNAsSb接面的厚度可以選擇為提供入射輻照波長的駐波。圖2B示出了如圖2A所示的相似配置，但是其包括多個GaInNAsSb接面，每個接面都由穿隧接面分隔開。GaInNAsSb接面的厚度可以為約100nm到約1微米。在一些實施方案中，基底為以背面金屬作為結構的最底層的半絕緣或氮摻雜的GaAs基底。
【0019】
對於1微米到1.55微米的照射的使用，反射鏡層可以是例如金或金/鎳合金。
【0020】
在一些實施方案中，換能器結構使用一個DBR而不是兩個。圖3A和3B示出了採用單個DBR的諧振換能器。圖3A示出了佈置在兩個半導體層d1和d2之間的單GaInNAsSb接面。這些層位於底部DBR上面，該底部DBR位於基底上面。裝置的上表面、如面對入射輻照的層d1的上表面可以塗有抗反射塗層。抗反射塗層可以針對入射輻照的波長來優化以減少散射。圖3B示出了具有多個GaInNAsSb接面的單DBR諧振腔配置。
【0021】
在一些實施方案中，換能器結構包括一個DBR和基底下方的後反射鏡。圖4A、4B、5A和5B中示出了這種裝置配置。圖4A和4B示出了具有頂部DBR、包括兩個半導體層d1和d2之間的單GaInNAsSb接面的諧振腔、和半導體層d2下方的後反射鏡的換能器。在一些實施方案中，後反射鏡還可以用作電接觸。圖4B中示出了多接面換能器，其中多個GaInNAsSb接面佈置在頂部DBR和後反射鏡之間。
【0022】
在圖5A和5B中示出的換能器中，DBR和後反射鏡兩者都在裝置的底部處使用。在該配置中，DBR的厚度與具有底部DBR而沒有後反射鏡的配置相比可以減小。與其他裝置一樣，層D1的上表面可以包括抗反射塗層。在一些實施方案中，基底被移除，並在其位置處使用金屬作為後反射鏡。在這樣的結構中，光穿過頂部DBR，然後穿過磊晶層，然後穿過底部DBR，最後到達後反射鏡。在這些實施方案中，磊晶層包括GaInNAsSb作為一個或更多個吸收層。
【0023】
在一些實施方案中，結構的最上層包括在磊晶層上方的空氣-半導體界面，所述磊晶層可以包括一個或更多個GaInNAsSb層。磊晶層下方是位於後反射鏡上面的DBR。在這些實施方案中，光到達空氣-半導體界面的最上層並且移動到磊晶層，然後到DBR，並且最後在被後反射鏡反射之後反射回來穿過結構。
【0024】
圖6A和圖6B中示出了具有兩個DBR和頂部基底層的諧振腔配置。頂部基底層對用於產生能量的入射輻照來說是基本透明的。在一些實施方案中，基底可以是GaAs，如n型GaAs，並且可以具有約150微米到約250微米、如175微米到225微米的厚度。例如通過研磨或蝕刻可以打薄基底的厚度以使吸收最小化，並且在這樣的實施方案中，基底的厚度可以為50微米或更小。在一些實施方案中，底部DBR可以與散熱器結合。使DBR與散熱器直接結合可以降低換能器的溫度。
【0025】
圖7A和7B示出了與圖6A和6B中示出的裝置配置相似、但用後反射鏡替代底部DBR的裝置配置。
【0026】
在一些實施方案中，結構具有腔內的接觸以避免來自DBR結構的電阻率。接觸是通過繞過DBR結構的橫向傳輸導電層（lateral transport conducting layer，LCL）在腔內製成的。圖8A和8B中示出了具有腔內的接觸的換能器。在這些裝置結構中，磊晶層被蝕刻到位於底部DBR上面的LCL或位於半導體層d1上面的LCL。LCL提高到電接觸（背接觸和上接觸）的載子移動率，並且可以例如由經摻雜的GaAs、如氮型GaAs形成。LCL和相似的蝕刻後電接觸可以用於由本公開提供的其他裝置結構。
【0027】
在一些實施方案中，結構可以反向生長。在這種情況下，可以將基底打薄到一定厚度或在生長後利用各種剝離技術移除。光在穿過磊晶層之前首先穿過基底。在這種結構中，基底的能隙大於磊晶層的能隙。
【0028】
可以構建由串聯連接的多個子電池構成的多個光伏轉換器以增加輸出電壓。子電池可以並聯連接用於增加輸出電流。一個實例是如圖9所示的Pi結構。紅外吸收器的特徵通常在於低電壓；但是，在一些應用中，需要增加換能器的電壓。這可以通過串聯連接多個換能器來實現。圖9中示出了一個這種配置的俯視圖，該配置被稱為Pi結構，其中，多個換能器電池（cell）以圍繞中心軸的同心環佈置，每個電池都通過絕緣體分隔開，並且多個電池或多個電池的子集合串聯連接。這種結構可以利用單接面來製作並提供高密度的電池。更高的電壓提供提高的DC-DC轉換效率和更低的歐姆損耗。雖然之後電流會產生歐姆損耗，但是由於增加的子電池數量導致了較低的電流，所以該歐姆損耗可以被抵消。
【0029】
圖10A和10B中示出了其他裝置結構。圖10A示出了單個三接面雙通道換能器。圖10B示出了四象限三接面雙通道換能器。裝置的尺寸為300微米×300微米。四個換能器可以串聯互連以增大電壓和/或減小電流。串聯互連還可以降低對入射輻照的空間方向的敏感度。此外，對於大面積的換能器，將收集區分為四個象限或其他子區域可以通過使電接觸更接近能量產生表面來降低歐姆損耗。圖11A和11B中示出了單個裝置和四象限裝置的照片。
【0030】
圖10A、10B、11A和11B中示出的換能器利用GaInNAsSb接面來製作。所有的磊晶層都與GaAs基底晶格匹配。後反射鏡佈置在GaAs基底的底部。三接面結構的諧振腔配置為支援約1.3微米、如1.32微米或1.342微米的駐波。對於配置用於1.32微米的能量轉換的裝置，GaInNAsSb接面的能隙為約0.92eV。一些這種裝置顯示出約65%到約75%的填充因數、約1.47V到約1.5V的Voc和約0.6A到約1.4A的Jsc。能量轉換效率在約0.6W到約6W的輸入功率下為約23%到25%。
【0031】
在一些實施方案中，相同半導體材料的兩個或更多個磊晶層具有不同的厚度。特別地，可以減小離光源更遠的磊晶層的厚度。在一些實施方案中，每個磊晶層的厚度都是相同的。在一些實施方案中，磊晶層的厚度是不同的，其根據光源的位置增大或減小。
【0032】
在一些實施方案中，在最上面的磊晶層之上有窗口層（window layer）。
【0033】
在一些實施方案中，整個裝置的厚度或高度可以是1微米到最大10微米。換能器的面積可以是例如100微米×100微米，最大1cm×1cm，或更大。例如總面積為10-4 cm2 到1cm2 。每個磊晶層的厚度都可以是幾百奈米到最大幾微米。
【0034】
圖12示出了單GaInNAsSb接面（空心圓圈）、雙GaInNAsSb接面（正方形）和三GaInNAsSb接面（加號）換能器的根據雷射輸入功率的在最大功率點（Mpp）處的效率、功率輸出和電壓。
【0035】
圖13示出了單GaInNAsSb接面（空心圓圈）、雙GaInNAsSb接面（正方形）和三GaInNAsSb接面（加號）換能器的根據數個雷射輸入功率準位的電壓的正規化電流密度（J）。
【0036】
最後，應注意的是，存在實施本文中公開的實施方案的替代方式。因此，本實施方案應被認為是說明性的而非限制性的。此外，申請專利範圍並不限於本文中給出的細節，而是具有其全部範圍及其均等物的權利。
 

Claims (17)

  1. 【第1項】
    一種換能器，其包括：
    　　一個或更多個GaInNAsSb接面；
    　　位於所述一個或更多個GaInNAsSb接面上面的第一半導體層；和
    　　位於所述一個或更多個GaInNAsSb接面下面的第二半導體層；
    　　其中，所述一個或更多個GaInNAsSb接面、所述第一半導體層和所述第二半導體層的厚度選擇為提供輻照波長的諧振腔。
  2. 【第2項】
    如申請專利範圍第1項所述的換能器，其中，每個所述GaInNAsSb接面都
    　　與GaAs晶格匹配；
    　　包括Ga1-x Inx Ny As1-y-z Sbz ，其中x、y和z的值為：0≦x≦0.24，0.01≦y≦0.07，和0.001≦z≦0.20；和
    　　具有對應於輻照波長的能量的能隙的特徵。
  3. 【第3項】
    如申請專利範圍第1項所述的換能器，其中，所述波長為1.3微米到1.55微米。
  4. 【第4項】
    如申請專利範圍第1項所述的換能器，其中，所述波長為1.30微米到1.35微米。
  5. 【第5項】
    如申請專利範圍第1項所述的換能器，其包括：
    　　位於所述第一半導體層上面的第一分散式布拉格反射器；
    　　位於所述第二半導體層下面的第二分散式布拉格反射器；或
    　　位於所述第一半導體層上面的第一分散式布拉格反射器和位於所述第二半導體層下面的第二分散式布拉格反射器。
  6. 【第6項】
    如申請專利範圍第1項所述的換能器，其包括：
    　　位於所述第一半導體層上面的第一分散式布拉格反射器；
    　　位於所述第二半導體層下面的第二分散式布拉格反射器；和
    　　位於所述第二分散式布拉格反射器下面的基底。
  7. 【第7項】
    如申請專利範圍第1項所述的換能器，其包括：
    　　位於所述第二半導體層下面的第二分散式布拉格反射器；和
    　　位於所述第二分散式布拉格反射器下面的基底。
  8. 【第8項】
    如申請專利範圍第7項所述的換能器，其包括位於所述第一半導體層上面的抗反射塗層。
  9. 【第9項】
    如申請專利範圍第1項所述的換能器，其包括：
    　　位於所述第一半導體層上面的第一分散式布拉格反射器；和
    　　位於所述第二半導體層下面的後反射鏡。
  10. 【第10項】
    如申請專利範圍第1項所述的換能器，其包括：
    　　位於所述第二半導體層下面的第二分散式布拉格反射器；和
    　　位於所述第二分散式布拉格反射器下面的後反射鏡。
  11. 【第11項】
    如申請專利範圍第1項所述的換能器，其包括：
    　　位於所述第一半導體層上面的第一分散式布拉格反射器；
    　　位於所述第二半導體層下面的第二分散式布拉格反射器；和
    　　位於所述第一分散式布拉格反射器上面的基底。
  12. 【第12項】
    如申請專利範圍第1項所述的換能器，其包括：
    　　位於所述第一半導體層上面的第一分散式布拉格反射器；
    　　位於所述第一分散式布拉格反射器上面的基底；和
    　　位於所述第二半導體層下面的後反射鏡。
  13. 【第13項】
    如申請專利範圍第1項所述的換能器，其包括：
    　　位於所述第一半導體層上面的第一橫向導電層；和
    　　位於所述第二半導體層上面的第二橫向導電層。
  14. 【第14項】
    如申請專利範圍第13項所述的換能器，其包括：
    　　與位於所述第一半導體層上面的所述第一橫向導電層接觸的第一電接觸；和
    　　與位於所述第二半導體層上面的所述第二橫向導電層接觸的第二電接觸。
  15. 【第15項】
    如申請專利範圍第1項所述的換能器，其特徵在於，在0.6W到6W的輻照輸入功率下至少20%的效率。
  16. 【第16項】
    一種換能器，其包括以Pi結構配置的多個如申請專利範圍第1項所述的換能器。
  17. 【第17項】
    一種換能器，其包括串聯互連的多個如申請專利範圍第1項所述的換能器。
TW104103975A 2014-02-05 2015-02-05 單片多接面換能器 TWI656651B (zh)

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US20150221803A1 (en) 2015-08-06
EP3103142B1 (en) 2020-08-19
EP3103142A1 (en) 2016-12-14
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EP3761375A1 (en) 2021-01-06
SG11201606353TA (en) 2016-09-29
SA516371606B1 (ar) 2020-11-26
US20180337301A1 (en) 2018-11-22
CN106133923B (zh) 2018-07-24
US20190348562A1 (en) 2019-11-14
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CN108807571A (zh) 2018-11-13
US11233166B2 (en) 2022-01-25

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