AU2002216611A1 - A theory of the charge multiplication process in avalanche photodiodes - Google Patents

A theory of the charge multiplication process in avalanche photodiodes

Info

Publication number
AU2002216611A1
AU2002216611A1 AU2002216611A AU1661102A AU2002216611A1 AU 2002216611 A1 AU2002216611 A1 AU 2002216611A1 AU 2002216611 A AU2002216611 A AU 2002216611A AU 1661102 A AU1661102 A AU 1661102A AU 2002216611 A1 AU2002216611 A1 AU 2002216611A1
Authority
AU
Australia
Prior art keywords
theory
avalanche photodiodes
multiplication process
charge multiplication
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002216611A
Inventor
Joe C. Campbell
Ping Yuan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Texas System
Original Assignee
University of Texas System
University of Texas at Austin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Texas System, University of Texas at Austin filed Critical University of Texas System
Publication of AU2002216611A1 publication Critical patent/AU2002216611A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H01L31/107
    • H01L31/1075
    • H01L31/1852
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/544Solar cells from Group III-V materials
AU2002216611A 2000-09-29 2001-10-01 A theory of the charge multiplication process in avalanche photodiodes Abandoned AU2002216611A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US23695200P 2000-09-29 2000-09-29
US60/236,952 2000-09-29
PCT/US2001/030775 WO2002027805A2 (en) 2000-09-29 2001-10-01 A theory of the charge multiplication process in avalanche photodiodes

Publications (1)

Publication Number Publication Date
AU2002216611A1 true AU2002216611A1 (en) 2002-04-08

Family

ID=22891704

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002216611A Abandoned AU2002216611A1 (en) 2000-09-29 2001-10-01 A theory of the charge multiplication process in avalanche photodiodes

Country Status (3)

Country Link
US (1) US7045833B2 (en)
AU (1) AU2002216611A1 (en)
WO (1) WO2002027805A2 (en)

Families Citing this family (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6894322B2 (en) * 2002-02-11 2005-05-17 Jds Uniphase Corporation Back illuminated photodiodes
US6952042B2 (en) * 2002-06-17 2005-10-04 Honeywell International, Inc. Microelectromechanical device with integrated conductive shield
US6747296B1 (en) * 2002-06-18 2004-06-08 Solid State Scientific Corporation Avalanche photodiode multiplication region and avalanche photodiode with low impact ionization rate ratio
KR100463416B1 (en) * 2002-09-05 2004-12-23 한국전자통신연구원 Avalanche phototransistor
TW564476B (en) * 2002-10-21 2003-12-01 Univ Chung Yuan Christian Method for fabricating a monolithic chip including pH, temperature and photo intensity multi-sensors and a readout circuit
US7271405B2 (en) * 2003-10-14 2007-09-18 Stc.Unm Intersubband detector with avalanche multiplier region
FR2879818B1 (en) * 2004-12-17 2007-04-20 Commissariat Energie Atomique SEMICONDUCTOR PHOTODETECTOR, MULTI-SPECTRAL DETECTION DEVICE FOR ELECTROMAGNETIC RADIATION USING SUCH PHOTODETECTOR, AND METHOD FOR IMPLEMENTING SUCH A DEVICE
US7326970B2 (en) * 2005-03-11 2008-02-05 The Boeing Company Metamorphic avalanche photodetector
US7612340B2 (en) 2005-08-03 2009-11-03 Drs Sensors & Targeting Systems, Inc. Method of operating an avalanche photodiode for reducing gain normalized dark current
US7378689B2 (en) * 2005-10-17 2008-05-27 Princeton Lightwave, Inc. Apparatus comprising an avalanche photodiode
US7553734B2 (en) * 2005-10-17 2009-06-30 Princeton Lightwave, Inc. Method for forming an avalanche photodiode
DE102005051571B4 (en) * 2005-10-21 2013-06-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photodiode chip high cutoff frequency
US7542147B2 (en) * 2005-12-01 2009-06-02 Zygo Corporation Data age compensation with avalanche photodiode
US7811913B2 (en) * 2005-12-19 2010-10-12 Sharp Laboratories Of America, Inc. Method of fabricating a low, dark-current germanium-on-silicon pin photo detector
US7626193B2 (en) * 2006-03-27 2009-12-01 Princeton Lightwave, Inc. Apparatus comprising a single photon photodetector having reduced afterpulsing and method therefor
US7446297B1 (en) * 2006-06-06 2008-11-04 Storage Technology Corporation Sensor and method for providing high transfer rate in page-based optical data storage
WO2008011152A2 (en) * 2006-07-21 2008-01-24 University Of Massachusetts Longwave infrared photodetector
US8595654B1 (en) * 2006-10-03 2013-11-26 Hrl Laboratories, Llc Semiconductor device coding using quantum dot technology
US7751655B2 (en) * 2007-07-27 2010-07-06 Hewlett-Packard Development Company, L.P. Micro-ring optical detector/modulator
EP2040307B1 (en) 2007-09-20 2013-08-07 Alcatel Lucent A photodetector for an optical device
US8239176B2 (en) * 2008-02-13 2012-08-07 Feng Ma Simulation methods and systems for carriers having multiplications
TW201001736A (en) * 2008-06-19 2010-01-01 Univ Nat Central A high-speed avalanche photodiode
EP2166579B1 (en) * 2008-09-18 2016-05-04 Alcatel Lucent Photonic power switch and method of controlling current flow in the photonic power switch and use of such photonic power switch
US8304783B2 (en) * 2009-06-03 2012-11-06 Cree, Inc. Schottky diodes including polysilicon having low barrier heights and methods of fabricating the same
US8409908B2 (en) * 2009-07-30 2013-04-02 General Electric Company Apparatus for reducing photodiode thermal gain coefficient and method of making same
JP5364526B2 (en) * 2009-10-02 2013-12-11 三菱重工業株式会社 Infrared detector, infrared detector, and method of manufacturing infrared detector
WO2011081693A2 (en) * 2009-10-12 2011-07-07 The Regents Of The University Of California Low noise, stable avalanche photodiode
SG176385A1 (en) * 2010-05-18 2011-12-29 Agency Science Tech & Res Avalanche photodiode structure
US8330171B2 (en) * 2010-07-23 2012-12-11 Intel Corporation High speed, wide optical bandwidth, and high efficiency resonant cavity enhanced photo-detector
KR102069891B1 (en) * 2011-08-31 2020-01-28 삼성전자주식회사 photoelectric conversion device
US9466747B1 (en) * 2011-10-25 2016-10-11 Radiation Monitoring Devices, Inc. Avalanche photodiode and methods of forming the same
US9123539B2 (en) * 2012-01-13 2015-09-01 Sumitomo Electric Industries, Ltd. Method for manufacturing optical semiconductor device
US10128397B1 (en) * 2012-05-21 2018-11-13 The Boeing Company Low excess noise, high gain avalanche photodiodes
US9640676B2 (en) * 2012-06-29 2017-05-02 Sunpower Corporation Methods and structures for improving the structural integrity of solar cells
TWI455354B (en) * 2012-07-05 2014-10-01 Univ Nat Central Homogeneous junction type of high speed photodiode
US9389273B2 (en) 2012-11-13 2016-07-12 International Business Machines Corporation Solar cell characteristics determination
US9362428B2 (en) 2012-11-27 2016-06-07 Artilux, Inc. Photonic lock based high bandwidth photodetector
US10916669B2 (en) 2012-12-10 2021-02-09 Artilux, Inc. Photonic lock based high bandwidth photodetector
US10388806B2 (en) 2012-12-10 2019-08-20 Artilux, Inc. Photonic lock based high bandwidth photodetector
FR3000608B1 (en) 2012-12-31 2015-03-06 Commissariat Energie Atomique SEMICONDUCTOR STRUCTURE OF THE AVALANCHE PHOTODIODE TYPE AND PROCESS FOR PRODUCING SUCH A STRUCTURE
JP2014222824A (en) * 2013-05-13 2014-11-27 住友電工デバイス・イノベーション株式会社 Method for identifying light signal wavelength and control method for optical transceiver
TW201504599A (en) * 2013-05-30 2015-02-01 Univ California Polarization independent photodetector with high contrast grating and two dimensional period structure that can be used as dual usage HCG VCSEL-detector
US9520514B2 (en) * 2013-06-11 2016-12-13 National Taiwan University Quantum dot infrared photodetector
ES2831831T3 (en) 2014-02-05 2021-06-09 Array Photonics Inc Monolithic Multi Junction Power Converter
US9748430B2 (en) 2015-06-18 2017-08-29 Board Of Regents, The University Of Texas System Staircase avalanche photodiode with a staircase multiplication region composed of an AIInAsSb alloy
US9768339B2 (en) * 2015-06-22 2017-09-19 IQE, plc Optoelectronic detectors having a dilute nitride layer on a substrate with a lattice parameter nearly matching GaAs
JP6542047B2 (en) * 2015-07-03 2019-07-10 キヤノンメディカルシステムズ株式会社 Ultrasonic diagnostic equipment
US10644187B2 (en) 2015-07-24 2020-05-05 Artilux, Inc. Multi-wafer based light absorption apparatus and applications thereof
US10381502B2 (en) * 2015-09-09 2019-08-13 Teledyne Scientific & Imaging, Llc Multicolor imaging device using avalanche photodiode
US10063849B2 (en) 2015-09-24 2018-08-28 Ouster, Inc. Optical system for collecting distance information within a field
US9992477B2 (en) 2015-09-24 2018-06-05 Ouster, Inc. Optical system for collecting distance information within a field
WO2017138778A1 (en) * 2016-02-12 2017-08-17 엘지이노텍(주) Semiconductor device
US10032950B2 (en) 2016-02-22 2018-07-24 University Of Virginia Patent Foundation AllnAsSb avalanche photodiode and related method thereof
US10109671B2 (en) 2016-05-23 2018-10-23 Massachusetts Institute Of Technology Photodiode array structure for cross talk suppression
US10948572B2 (en) 2016-08-24 2021-03-16 Ouster, Inc. Optical system for collecting distance information within a field
US10332753B2 (en) 2017-01-13 2019-06-25 International Business Machines Corporation Wet etching of samarium selenium for piezoelectric processing
WO2018160164A1 (en) 2017-02-28 2018-09-07 Hewlett Packard Enterprise Development Lp Quantum-dot photonics
US12009379B2 (en) * 2017-05-01 2024-06-11 Visera Technologies Company Limited Image sensor
DE202018006695U1 (en) 2017-05-15 2022-04-01 Ouster, Inc. Optical image transmitter with brightness enhancement
WO2019010037A1 (en) 2017-07-06 2019-01-10 Solar Junction Corporation Hybrid mocvd/mbe epitaxial growth of high-efficiency lattice-matched multijunction solar cells
WO2019040486A1 (en) * 2017-08-24 2019-02-28 Board Of Regents, The University Of Texas System Mid-infrared detector using a heavily doped backplane to the detector structure
EP3669402A1 (en) 2017-09-27 2020-06-24 Array Photonics, Inc. Short wavelength infrared optoelectronic devices having a dilute nitride layer
CN107863403B (en) * 2017-11-28 2023-10-20 中国工程物理研究院电子工程研究所 High-linear gain infrared avalanche photodiode and preparation method thereof
US10481269B2 (en) 2017-12-07 2019-11-19 Ouster, Inc. Rotating compact light ranging system
US11029406B2 (en) 2018-04-06 2021-06-08 Luminar, Llc Lidar system with AlInAsSb avalanche photodiode
KR102562806B1 (en) * 2018-07-11 2023-08-01 에스알아이 인터내셔널 Linear mode avalanche photodiodes without excess noise
US11473970B2 (en) 2018-08-09 2022-10-18 Ouster, Inc. Subpixel apertures for channels in a scanning sensor array
US10739189B2 (en) 2018-08-09 2020-08-11 Ouster, Inc. Multispectral ranging/imaging sensor arrays and systems
US10818807B2 (en) * 2019-01-21 2020-10-27 Globalfoundries Inc. Semiconductor detectors integrated with Bragg reflectors
US10811549B2 (en) * 2019-01-29 2020-10-20 Hewlett Packard Enterprise Development Lp Quantum-dot-based avalanche photodiodes on silicon
EP3939085A1 (en) 2019-03-11 2022-01-19 Array Photonics, Inc. Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride active regions
EP4064369A4 (en) * 2019-11-18 2023-07-12 Nippon Telegraph And Telephone Corporation Avalanche photodiode
CN111430401B (en) * 2020-02-25 2022-09-09 南京邮电大学 Monolithic optoelectronic integrated circuit and method of forming the same
DE102020105353A1 (en) 2020-02-28 2021-09-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Method and photodiode device for the coherent detection of an optical signal
KR20210137811A (en) 2020-05-11 2021-11-18 삼성전자주식회사 Sensor and electronic device
RU2769749C1 (en) * 2021-04-16 2022-04-05 Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный университет имени М.В. Ломоносова" (МГУ) Avalanche photodiode and method for its manufacture
US11721780B2 (en) * 2021-11-17 2023-08-08 Globalfoundries U.S. Inc. Avalanche photodetectors with a multiple-thickness charge sheet
CN114362710B (en) * 2021-12-03 2024-03-29 中国科学院上海微系统与信息技术研究所 Acoustic wave resonator

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5861679A (en) * 1981-10-07 1983-04-12 Kokusai Denshin Denwa Co Ltd <Kdd> Avalanche photo diode with quantum well
US4839706A (en) * 1986-08-07 1989-06-13 Polaroid Corporation Avalanche photodetector
JPH0821727B2 (en) * 1988-11-18 1996-03-04 日本電気株式会社 Avalanche photodiode
US5204871A (en) * 1990-03-29 1993-04-20 Larkins Eric C Bistable optical laser based on a heterostructure pnpn thyristor
JP2941349B2 (en) * 1990-04-06 1999-08-25 株式会社日立製作所 Super lattice APD
JP2937404B2 (en) * 1990-04-18 1999-08-23 日本電気株式会社 Semiconductor light receiving element
JPH04125977A (en) * 1990-09-17 1992-04-27 Nec Corp Heteromultiple structure avalanche photodiode
EP0495414B1 (en) * 1991-01-11 1997-10-15 Canon Kabushiki Kaisha Photoelectric converting device and image processing apparatus utilizing the same
US5204539A (en) * 1991-01-28 1993-04-20 Nec Corporation Avalanche photodiode with hetero-periodical structure
JP2998375B2 (en) * 1991-12-20 2000-01-11 日本電気株式会社 Avalanche photodiode
KR960001467B1 (en) * 1992-12-22 1996-01-30 한국 전기통신공사 Avalanche photo diode having super lattice structure
JP2845081B2 (en) * 1993-04-07 1999-01-13 日本電気株式会社 Semiconductor light receiving element
JP2699807B2 (en) * 1993-06-08 1998-01-19 日本電気株式会社 Compositionally modulated avalanche photodiode
US6326650B1 (en) * 1995-08-03 2001-12-04 Jeremy Allam Method of forming a semiconductor structure
JPH09237913A (en) * 1995-12-28 1997-09-09 Fuji Xerox Co Ltd Semiconductor photosensitive element and its manufacture

Also Published As

Publication number Publication date
US20030047752A1 (en) 2003-03-13
WO2002027805A3 (en) 2003-01-16
US7045833B2 (en) 2006-05-16
WO2002027805A2 (en) 2002-04-04

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