JP2013511152A5 - - Google Patents
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- JP2013511152A5 JP2013511152A5 JP2012538879A JP2012538879A JP2013511152A5 JP 2013511152 A5 JP2013511152 A5 JP 2013511152A5 JP 2012538879 A JP2012538879 A JP 2012538879A JP 2012538879 A JP2012538879 A JP 2012538879A JP 2013511152 A5 JP2013511152 A5 JP 2013511152A5
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- JP
- Japan
- Prior art keywords
- photoresist
- virtual
- acid
- determining
- simulated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229920002120 photoresistant polymer Polymers 0.000 claims description 78
- 239000002253 acid Substances 0.000 claims description 64
- 238000000034 method Methods 0.000 claims description 38
- 238000001000 micrograph Methods 0.000 claims description 12
- 238000010276 construction Methods 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000006303 photolysis reaction Methods 0.000 claims description 4
- 230000015843 photosynthesis, light reaction Effects 0.000 claims description 4
- 238000004088 simulation Methods 0.000 claims 2
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26053309P | 2009-11-12 | 2009-11-12 | |
| US61/260,533 | 2009-11-12 | ||
| US12/915,455 US8589827B2 (en) | 2009-11-12 | 2010-10-29 | Photoresist simulation |
| US12/915,455 | 2010-10-29 | ||
| PCT/US2010/055937 WO2011059947A2 (en) | 2009-11-12 | 2010-11-09 | Photoresist simulation |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013511152A JP2013511152A (ja) | 2013-03-28 |
| JP2013511152A5 true JP2013511152A5 (https=) | 2013-12-19 |
| JP5719850B2 JP5719850B2 (ja) | 2015-05-20 |
Family
ID=43974826
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012538879A Active JP5719850B2 (ja) | 2009-11-12 | 2010-11-09 | フォトレジストシミュレーション |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US8589827B2 (https=) |
| EP (1) | EP2499661B1 (https=) |
| JP (1) | JP5719850B2 (https=) |
| KR (1) | KR101454522B1 (https=) |
| WO (1) | WO2011059947A2 (https=) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8589827B2 (en) * | 2009-11-12 | 2013-11-19 | Kla-Tencor Corporation | Photoresist simulation |
| NL2009982A (en) * | 2012-01-10 | 2013-07-15 | Asml Netherlands Bv | Source mask optimization to reduce stochastic effects. |
| KR101362326B1 (ko) * | 2012-08-06 | 2014-02-24 | 현대모비스 주식회사 | 주차 정렬 기능을 갖는 차량 후방 카메라 시스템 및 이를 이용한 차량의 주차 지원 시스템 |
| TWI575566B (zh) | 2014-02-24 | 2017-03-21 | 東京威力科創股份有限公司 | 與光敏化化學放大光阻化學品及程序一起使用的方法及技術 |
| US10020195B2 (en) | 2014-02-25 | 2018-07-10 | Tokyo Electron Limited | Chemical amplification methods and techniques for developable bottom anti-reflective coatings and dyed implant resists |
| US9733576B2 (en) * | 2014-03-17 | 2017-08-15 | Kla-Tencor Corporation | Model for accurate photoresist profile prediction |
| CN103887199B (zh) * | 2014-03-20 | 2017-01-11 | 上海华力微电子有限公司 | 采用暗场硅片检测机台检测光阻损伤的方法 |
| US10453748B2 (en) * | 2015-08-27 | 2019-10-22 | Micron Technology, Inc. | Methods of forming semiconductor device structures including stair step structures |
| US10048594B2 (en) | 2016-02-19 | 2018-08-14 | Tokyo Electron Limited | Photo-sensitized chemically amplified resist (PS-CAR) model calibration |
| US10429745B2 (en) * | 2016-02-19 | 2019-10-01 | Osaka University | Photo-sensitized chemically amplified resist (PS-CAR) simulation |
| CN109313395B (zh) | 2016-05-13 | 2021-05-14 | 东京毅力科创株式会社 | 通过使用光剂来进行的临界尺寸控制 |
| WO2017197279A1 (en) | 2016-05-13 | 2017-11-16 | Tokyo Electron Limited | Critical dimension control by use of photo-sensitized chemicals or photo-sensitized chemically amplified resist |
| US10795267B2 (en) | 2016-12-02 | 2020-10-06 | Asml Netherlands B.V. | Model for estimating stochastic variation |
| FR3060752B1 (fr) * | 2016-12-15 | 2019-05-10 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de mise en œuvre d'une technique de caracterisation cd-sem |
| US10474042B2 (en) * | 2017-03-22 | 2019-11-12 | Kla-Tencor Corporation | Stochastically-aware metrology and fabrication |
| WO2018206275A1 (en) | 2017-05-12 | 2018-11-15 | Asml Netherlands B.V. | Methods for evaluating resist development |
| US11493850B2 (en) | 2019-07-23 | 2022-11-08 | Samsung Electronics Co., Ltd. | Lithography method using multi-scale simulation, semiconductor device manufacturing method and exposure equipment |
| KR102898764B1 (ko) | 2019-08-16 | 2025-12-10 | 도쿄엘렉트론가부시키가이샤 | 확률 중심 결함 교정을 위한 방법 및 공정 |
| JP7310466B2 (ja) * | 2019-09-10 | 2023-07-19 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム評価方法 |
| JP6741838B1 (ja) * | 2019-09-11 | 2020-08-19 | 東京応化工業株式会社 | 情報処理システム、情報処理装置、情報処理方法及びプログラム |
| JP6832463B1 (ja) * | 2020-04-06 | 2021-02-24 | 東京応化工業株式会社 | 情報処理システム、情報処理装置、情報処理方法及びプログラム |
| TWI877374B (zh) * | 2020-06-05 | 2025-03-21 | 美商新思科技股份有限公司 | 校正在精簡模型中的隨機訊號的方法及系統 |
| KR20220149823A (ko) * | 2021-04-30 | 2022-11-09 | 삼성전자주식회사 | 멀티-스케일 시뮬레이션을 이용한 리소그라피 방법, 및 그 리소그라피 방법을 기반으로 한 반도체 소자 제조방법 및 노광 설비 |
| CN114488705B (zh) * | 2022-01-13 | 2026-02-27 | 东方晶源微电子科技(北京)股份有限公司 | 一种负向显影光刻胶模型优化方法 |
| CN115831240B (zh) * | 2022-12-08 | 2025-10-14 | 广东省大湾区集成电路与系统应用研究院 | 建模方法、装置、计算机可读存储介质以及处理器 |
| WO2026006407A1 (en) * | 2024-06-26 | 2026-01-02 | Lam Research Corporation | Defect reduction strategies using mechanical learnings from mechanical simulation |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6078738A (en) | 1997-05-08 | 2000-06-20 | Lsi Logic Corporation | Comparing aerial image to SEM of photoresist or substrate pattern for masking process characterization |
| JP2971434B2 (ja) * | 1998-03-19 | 1999-11-08 | 株式会社東芝 | 化学増幅型レジスト及びその製造方法、並びにパターン形成方法及び露光シミュレーション方法 |
| JP3564298B2 (ja) | 1998-06-18 | 2004-09-08 | 株式会社東芝 | 計算機を用いたパターン評価方法およびパターン生成方法 |
| JP2001135567A (ja) * | 1999-11-08 | 2001-05-18 | Semiconductor Leading Edge Technologies Inc | レジストパターン形状のシミュレーション装置、シミュレーション方法および記録媒体 |
| JP2002006498A (ja) * | 2000-06-27 | 2002-01-09 | Shin Etsu Chem Co Ltd | 化学増幅レジスト材料における特性予測方法 |
| JP2002287360A (ja) * | 2001-03-27 | 2002-10-03 | Sony Corp | 感光性組成物の設計方法およびリソグラフィ方法 |
| JP2003068625A (ja) * | 2001-08-29 | 2003-03-07 | Nikon Corp | レジストパターン形状のシミュレーション方法 |
| KR20050065164A (ko) * | 2003-12-24 | 2005-06-29 | 주식회사 하이닉스반도체 | 포토레지스트 패턴의 사이드 프로파일 검사방법 |
| US7025280B2 (en) | 2004-01-30 | 2006-04-11 | Tokyo Electron Limited | Adaptive real time control of a reticle/mask system |
| JP2007523373A (ja) * | 2004-02-23 | 2007-08-16 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 画像システムにおける画像ぼけ部の決定 |
| US7116411B2 (en) * | 2004-08-26 | 2006-10-03 | Asml Masktools B.V. | Method of performing resist process calibration/optimization and DOE optimization for providing OPE matching between different lithography systems |
| KR20060103972A (ko) * | 2005-03-29 | 2006-10-09 | 삼성전자주식회사 | 미세구조물의 프로파일 검사 방법 |
| US7378202B2 (en) | 2006-02-21 | 2008-05-27 | Mentor Graphics Corporation | Grid-based resist simulation |
| JP2008091721A (ja) * | 2006-10-03 | 2008-04-17 | Toshiba Corp | レジストパターン予測システム、レジストパターン予測方法、及びマスクパターン補正方法 |
| US7949618B2 (en) | 2007-03-28 | 2011-05-24 | Tokyo Electron Limited | Training a machine learning system to determine photoresist parameters |
| WO2010046408A2 (en) * | 2008-10-22 | 2010-04-29 | Micronic Laser Systems Ab | Method of iterative compensation for non-linear effects in three-dimensional exposure of resist |
| US8589827B2 (en) * | 2009-11-12 | 2013-11-19 | Kla-Tencor Corporation | Photoresist simulation |
| US8336003B2 (en) * | 2010-02-19 | 2012-12-18 | International Business Machines Corporation | Method for designing optical lithography masks for directed self-assembly |
| US8108805B2 (en) * | 2010-03-26 | 2012-01-31 | Tokyo Electron Limited | Simplified micro-bridging and roughness analysis |
-
2010
- 2010-10-29 US US12/915,455 patent/US8589827B2/en active Active
- 2010-11-09 KR KR1020127013240A patent/KR101454522B1/ko active Active
- 2010-11-09 WO PCT/US2010/055937 patent/WO2011059947A2/en not_active Ceased
- 2010-11-09 JP JP2012538879A patent/JP5719850B2/ja active Active
- 2010-11-09 EP EP10830578.0A patent/EP2499661B1/en active Active
-
2013
- 2013-08-28 US US14/011,989 patent/US9679116B2/en active Active
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